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    LJ MARKING TRANSISTOR SOT23 Search Results

    LJ MARKING TRANSISTOR SOT23 Result Highlights (5)

    Part ECAD Model Manufacturer Description Download Buy
    TTC5886A Toshiba Electronic Devices & Storage Corporation NPN Bipolar Transistor / hFE=400~1000 / VCE(sat)=0.22V / tf=120ns Visit Toshiba Electronic Devices & Storage Corporation
    TTA2097 Toshiba Electronic Devices & Storage Corporation PNP Bipolar Transistor / hFE=200~500 / VCE(sat)=-0.27V / tf=60ns Visit Toshiba Electronic Devices & Storage Corporation
    TBAW56 Toshiba Electronic Devices & Storage Corporation Switching Diode, 80 V, 0.215 A, SOT23 Visit Toshiba Electronic Devices & Storage Corporation
    XPQR8308QB Toshiba Electronic Devices & Storage Corporation N-ch MOSFET, 80 V, 350 A, 0.00083 Ω@10V, L-TOGL Visit Toshiba Electronic Devices & Storage Corporation
    XPQ1R00AQB Toshiba Electronic Devices & Storage Corporation N-ch MOSFET, 100 V, 300 A, 0.00103 Ω@10V, L-TOGL Visit Toshiba Electronic Devices & Storage Corporation

    LJ MARKING TRANSISTOR SOT23 Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    CMBT2369

    Abstract: np TRANSISTOR smd SOT23
    Text: Continental Device India Limited An ISO/TS16949 and ISO 9001 Certified Company SOT-23 Formed SMD Package CMBT2369 SILICON PLANAR EPITAXIAL SWITCHING TRANSISTOR N–P N transistor Marking CMBT2369 = lJ PACKAGE OUTLINE DETAILS ALL DIMENSIONS IN mm Pin configuration


    Original     		PDF ISO/TS16949 OT-23 CMBT2369 C-120 CMBT2369 np TRANSISTOR smd SOT23

    np TRANSISTOR smd SOT23

    Abstract: smd transistor marking np CMBT2369
    Text: Continental Device India Limited An ISO/TS 16949, ISO 9001 and ISO 14001 Certified Company SOT-23 Formed SMD Package CMBT2369 SILICON PLANAR EPITAXIAL SWITCHING TRANSISTOR N–P N transistor Marking CMBT2369 = lJ PACKAGE OUTLINE DETAILS ALL DIMENSIONS IN mm


    Original     		PDF OT-23 CMBT2369 C-120 np TRANSISTOR smd SOT23 smd transistor marking np CMBT2369

    transistor marking hy

    Abstract: PHV6 KDu TRANSISTOR 7L SOT23 MARKING QV sot23 7L Marking 990L marking hu sot23 STT3PF20V
    Text: STT3PF20V P-CHANNEL 20V - 0.14 W - 2.2A SOT23-6L 2.7-DRIVE STripFET II POWER MOSFET TYPE STT3PF20V • ■ ■ ■ VDSS 9 RDS on W # W # ID 9 9 $ TYPICAL RDS(on) = 0.14 W (@4.5V) TYPICAL RDS(on) = 0.20 W (@2.7V) ULTRA LOW THRESHOLD GATE DRIVE (2.7V) STANDARD OUTLINE FOR EASY


    Original     		PDF STT3PF20V OT23-6L OT23-6L transistor marking hy PHV6 KDu TRANSISTOR 7L SOT23 MARKING QV sot23 7L Marking 990L marking hu sot23 STT3PF20V

    2SC5890

    Abstract: No abstract text available
    Text: JEIIZU , Line. C/ 20 STERN AVE. SPRINGFIELD, .NEW JERSEY 07081 U.S.A. TELEPHONE: 973 376-2922 (212)227-6005 FAX: (973) 376-8960 Silicon NPN RF Transistor 2SC5890 UkSUKIKMUN >"4|^^ • High Gain Bandwidth Product SOT-23-3L package fT = 7.8 GHz TYP. • High power gain and low noise figure ;


    Original     		PDF 2SC5890 OT-23-3L 900MHz 2SC5890

    Untitled

    Abstract: No abstract text available
    Text: IS/ISO 9002 Lic# QSC/L- 000019.2 Continental Device India Limited IS / IECQC 700000 IS / IECQC 750100 An IS/ISO 9002 and IECQ Certified Manufacturer SOT-23 Formed SMD Package CMBT2369 SILICON PLANAR EPITAXIAL SWITCHING TRANSISTOR N–P N transistor Marking


    Original     		PDF OT-23 CMBT2369 C-120

    XWs transistor

    Abstract: xws 03
    Text: SIEMENS BCR 505 NPN Silicon Digital Transistor >Switching circuit, inverter, interface circuit, driver circuit >Built in bias resistor R-|=2.2k£i, R2=10ki2 R HJ LJ Type Marking Ordering Code BCR 505 XWs Pin Configuration Q62702-C2354 1= B Package 2=E 3=C


    OCR Scan     		PDF 10ki2) Q62702-C2354 OT-23 XWs transistor xws 03

    bf579

    Abstract: No abstract text available
    Text: SIEM EN S PNP Silicon RF Transistor BF 579 • For low-distortion, low-noise VHF/UHF amplifier and UHF oscillator applications in TV tuners • Typical collector current 10 mA Type Marking Ordering Code tape and reel BF 579 LJ Q62702-F971 Pin Co nfigural ion


    OCR Scan     		PDF Q62702-F971 OT-23 0B3Sb05 B235b05 bf579

    TRANSISTOR SMD MARKING CODE SP

    Abstract: smd "code rc" transistor marking code sp TRANSISTOR SMD MARKING CODE X D transistor SMD 520 BSS84 transistor SMD MARKING CODE marking code br SMD transistor marking code SS SOT23 transistor smd transistor 24 sot23
    Text: Philips Semiconductors Product specification P-channel enhancement mode vertical D-MOS transistor BSS84 PINNING - SOT23 FEATURES • Low threshold voltage • Direct interface to C-MOS, TTL, etc. • High-speed switching • No secondary breakdown. PIN SYMBOL


    OCR Scan     		PDF BSS84 1997Jun TRANSISTOR SMD MARKING CODE SP smd "code rc" transistor marking code sp TRANSISTOR SMD MARKING CODE X D transistor SMD 520 transistor SMD MARKING CODE marking code br SMD transistor marking code SS SOT23 transistor smd transistor 24 sot23

    smd transistor marking 2y

    Abstract: m8p smd smd transistor 2y ti m8p smd transistor marking m8p TRANSISTOR SMD 2y smd transistor m8 sot23 marking code m8p transistor marking 2y marking M8p
    Text: Philips Semiconductors Product specification N-channel enhancement mode vertical D-MOS transistor BSN20 FEATURES PINNING - SOT23 • Direct interface to C-MOS, TTL, etc. PIN SYMBOL DESCRIPTION • High-speed switching 1 g gate • No secondary breakdown. 2


    OCR Scan     		PDF BSN20 1997Jun smd transistor marking 2y m8p smd smd transistor 2y ti m8p smd transistor marking m8p TRANSISTOR SMD 2y smd transistor m8 sot23 marking code m8p transistor marking 2y marking M8p

    transistor 6Cp

    Abstract: bc817 6Bp transistor transistor 6bp 6Cp transistor marking 6ap General Purpose Transistors bc817 6Bp bc818 marking code 6Cp
    Text: DISCRETE SEMICONDUCTORS Æm ülnlEET BC817; BC818 NPN general purpose transistors Product specification Supersedes data of September 1994 File under Discrete Semiconductors, SC04 Philips Semiconductors 1997 Mar 12 PHILIPS Philips Semiconductors Product specification


    OCR Scan     		PDF BC817; BC818 BC807 BC808. BC817 BC817-16 BC817-25 BC817-40 transistor 6Cp 6Bp transistor transistor 6bp 6Cp transistor marking 6ap General Purpose Transistors bc817 6Bp bc818 marking code 6Cp

    Untitled

    Abstract: No abstract text available
    Text: >ki>jxiyki /9-0458; Rev 7/ 9/96 Low-Cost, Micropower, Precision, 3-Terminal, 1.2V Voltage Reference General Description The MAX6120 operates from a supply voltage as low as 2.4V, and initial accuracy is ±1% for the SOT23 pack­ age. Output voltage temperature coefficient is typically


    OCR Scan     		PDF MAX6120 30ppm/Â 100ppm/Â 50ppm/Â MAX6520 OT23-3

    transistor 1fp

    Abstract: 1FP transistor BC847 1gp transistor BC848C transistor 1fp 11 BC848 npn general purpose transistors 1gp npn code 1gp
    Text: DISCRETE SEMICONDUCTORS BC846; BC847; BC848 NPN general purpose transistors Product specification Supersedes data of September 1994 File under Discrete Semiconductors, SC04 Philips Semiconductors 1997 Mar 12 PHILIPS Philips Semiconductors Product specification


    OCR Scan     		PDF BC846; BC847; BC848 BC856; BC857; BC858. BC846 BC847C BC846A transistor 1fp 1FP transistor BC847 1gp transistor BC848C transistor 1fp 11 npn general purpose transistors 1gp npn code 1gp

    Untitled

    Abstract: No abstract text available
    Text: cP > G en eral v S e m ic o n d u c t o r MMBT2907A Small Signal Transistor PNP % TO-236AB (SOT-23) Mounting Pad Layout I— 0.037 (0.95)— j 0.037 .0 3 (0.95) " i~ r 0.079 (2.0) 0.035 (0.9) t H 0.031 (0.8) Features_ Mechanical Data_


    OCR Scan     		PDF MMBT2907A O-236AB OT-23) MPS2907A. OT-23 E8/10K 30K/box 30K/box 150mA

    Untitled

    Abstract: No abstract text available
    Text: r& T O K O TK716XX LOW DROPOUT VOLTAGE REGULATOR FEATURES APPLICATIONS • Available in ± 2.0 % or ± 1.0 % Output Tolerance ■ Battery Powered Systems ■ Active High On/Off Control ■ Cellular Telephones ■ Very Low Quiescent Current ■ Pagers ■ Very Low Dropout Voltage


    OCR Scan     		PDF TK716XX OT-23-5) TK716xx IC-216-TK716xx

    Untitled

    Abstract: No abstract text available
    Text: SIEMENS BF 599 NPN Silicon RF Transistor • Common emitter IF/RF amplifier • Low feedback capacitance due to shield diffusion Type Marking Ordering Code tape and reel BF 599 NB Q62702-F979 Pin Configuration 2 1 3 E B Package1) SOT-23 C Maximum Ratings


    OCR Scan     		PDF Q62702-F979 OT-23 EHT07072

    CMPT2222A

    Abstract: ja ctb
    Text: Central" Semiconductor Corp. C M P T 2222A NPN SILICON TRANSISTOR DESCRIPTION: T he CENTRAL SE M IC O N D U C T O R CMPT2222A type is an NPN silicon transistor manufactured by the epitaxial planar process, epoxy molded in a surface mount package, designed for small signal general pu rpose and


    OCR Scan     		PDF CMPT2222A OT-23 CMPT2222A 150mA, ja ctb

    BFT25

    Abstract: bft25 transistor
    Text: N AMER P H I L I P S / D I S C R E T E ^53^31 o o ia is i b 'l BSE D J BFT25 T - 3 I -|7 N-P-N H.F. WIDEBAND TRANSISTOR N-P-N transistor in a plastic SOT-23 envelope, primarily intended for use in u.h.f. low power amplifiers in thick and thin-film circuits, such as in pocket phones, paging systems, etc. The transistor features


    OCR Scan     		PDF BFT25 OT-23 7ZS76S4 Z67656 BFT25 bft25 transistor

    Untitled

    Abstract: No abstract text available
    Text: KSR2110 PNP EPITAXIAL SILICON TRANSISTOR SWITCHING APPLICATION Bias Resistor Built In SOT-23 • Switching circuit, Inverter, Interface circuit, Driver Circuit • Built in bias Resistor (R=10K£2) • Complement to KSR1110 ABSOLUTE MAXIMUM RATINGS (T a=25°C)


    OCR Scan     		PDF KSR2110 KSR1110 OT-23

    transistor af 178

    Abstract: BC807 BC817-16 BC817-25 BC817-40 MC9100
    Text: BC817-16 / -25 / -40 NPN SURFACE MOUNT SMALL SIGNAL TRANSISTOR Features 310 mW Power Dissipation Ideally Suited for Automatic Insertion Epitaxial Planar Die Construction For Switching, AF Driver and Amplifier Applications Complementary PNP Types Available BC807


    OCR Scan     		PDF BC817-16 BC807) OT-23, MIL-STD-202, BC817-25 BC817-40 DS11107 BC817-16/-25/-40 transistor af 178 BC807 MC9100

    ITT DIODE tv

    Abstract: ITT DIODE ITT DIODE 60
    Text: BS850 P-Channel Enhancement Mode DMOS Transistor Features - high input impedance - high-speed switching - no minority carrier storage time - CMOS logic compatible input - no thermal runaway - no secondary breakdown Pin configuration 1 = Drain, 2 = Gate, 3 = Source


    OCR Scan     		PDF BS850 OT-23 BS85Q ITT DIODE tv ITT DIODE ITT DIODE 60

    2SB62

    Abstract: f50510 TK732xxM
    Text: r& T O K O TK732xx LOW DROPOUT REGULATOR FEATURES APPLICATIONS • Up to 5 A Output Current Capability With External ■ Battery Powered Systems PNP Transistor ■ Cellular/Cordless Telephones ■ Internal Short Circuit Protection ■ Radio Control Systems


    OCR Scan     		PDF TK732xx TK732xx 1C-2375 IC-xxx-TK732xx 2SB62 f50510 TK732xxM

    47 16S P6

    Abstract: No abstract text available
    Text: SEM ICONDUCTOR KRA116S-KRA122S TECHNI CAL DATA EPITAX IAL PLANAR PNP TR A N SIST O R SW ITC H IN G A PPLICATION. INTERFA CE CIRCU IT A ND DRIVER CIRC U IT A PPLICATIO N L FEA T U RE S lì L DIM • With Built-in Bias Resistors. • Simplify Circuit Design.


    OCR Scan     		PDF KRA116S-KRA122S KRA116S KRA117S KRA118S KRA120S KRA122S KRA120S KRA121S 47 16S P6

    Untitled

    Abstract: No abstract text available
    Text: • ^ £ 3 1 3 1 0Q5£bb7 7=12 * A P X N ANER PHILIPS/DISCRETE BSV52 b7E D J V SILICON PLANAR EPITAXIAL TRANSISTORS • High-speed switching N-P-N transistor in a m icrominiature plastic envelope. It is intended fo r very high-speed saturated switching in thick and thin -film circuits.


    OCR Scan     		PDF BSV52 bb53T31 7Z10107 7Z10I06 0025b75 7Z10I00 bbS3T31 D02Sb73

    sot-23 marking 213

    Abstract: No abstract text available
    Text: MOTOROLA Order this document by MMBTH24LT1/D SEMICONDUCTOR TECHNICAL DATA M M BTH24LT1 VH F M ixer Transistor NPN Silicon • Motorola Preferred Device COLLECTOR 3 Designed for • f j = 400 MHz Min @ 8 mA EMITTER CASE 318-08, STYLE 6 SOT-23 TO-236AB MAXIMUM RATINGS


    OCR Scan     		PDF MMBTH24LT1/D BTH24LT1 OT-23 O-236AB) MMBTH24LT1 sot-23 marking 213