2SB62 Search Results

2SB62 Result Highlights (5)

Part	Manufacturer	Description
2SB624-T2B-A	Renesas Electronics Corporation	Small Signal Bipolar Transistors, MM, /
2SB624-T1B-AT	Renesas Electronics Corporation	Small Signal Bipolar Transistors, MM, /
2SB624(0)-T1B-A	Renesas Electronics Corporation	Small Signal Bipolar Transistors
2SB624-T1B-A	Renesas Electronics Corporation	Small Signal Bipolar Transistors, MM, /
2SB624A-T1B-AT	Renesas Electronics Corporation	Small Signal Bipolar Transistors, MM, /

2SB62 Price and Stock

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Hirose Electric Co Ltd AP105-GT10R-2022S-B(62) TOOL PRESS APPLICATOR
Distributors	Part	Package	Stock	Lead Time	Min Order Qty	Price	Buy
DigiKey	AP105-GT10R-2022S-B(62)	Bulk				1 - 10 - 100 - 1000 - 10000 -	Buy Now
Mouser Electronics	AP105-GT10R-2022S-B(62)					1 $192.86 10 $192.86 100 $192.86 1000 $192.86 10000 $192.86	Get Quote
Mitsubishi Electric 2SB627BD
Distributors	Part	Package	Stock	Lead Time	Min Order Qty	Price	Buy
Bristol Electronics	2SB627BD		41		1	1 $18 10 $18 100 $17.307 1000 $17.307 10000 $17.307	Buy Now
Quest Components	2SB627BD		32			1 $19.5 10 $19.5 100 $18.75 1000 $18.75 10000 $18.75	Buy Now
Mitsubishi Electric 2SB621
Distributors	Part	Package	Stock	Lead Time	Min Order Qty	Price	Buy
Bristol Electronics	2SB621		178			1 - 10 - 100 - 1000 - 10000 -	Get Quote
NEC Electronics Group 2SB624-T1B
Distributors	Part	Package	Stock	Lead Time	Min Order Qty	Price	Buy
Quest Components	2SB624-T1B		527			1 $0.8 10 $0.8 100 $0.36 1000 $0.24 10000 $0.24	Buy Now
NEC Electronics Group 2SB624-T1B(BV3)
Distributors	Part	Package	Stock	Lead Time	Min Order Qty	Price	Buy
Quest Components	2SB624-T1B(BV3)		4,880			1 $0.74 10 $0.74 100 $0.74 1000 $0.222 10000 $0.148	Buy Now

Find more 2SB62 price and stock on Findchips.com

2SB62 Datasheets (119)

Part	Manufacturer	Description	Type	PDF
2SB62	Fuji-SVEA	Japanese 2S Transistor Cross Reference Datasheet	Scan	PDF
2SB62	Unknown	Transistor Shortform Datasheet & Cross References	Scan	PDF
2SB62	Unknown	Discontinued Transistor Data Book 1975	Scan	PDF
2SB62	Unknown	The Japanese Transistor Manual 1981	Scan	PDF
2SB62	Unknown	Shortform Data and Cross References (Misc Datasheets)	Short Form	PDF
2SB62	Unknown	Shortform Transistor Datasheet Guide	Short Form	PDF
2SB62	Unknown	Vintage Transistor Datasheets	Scan	PDF
2SB62	Unknown	Shortform IC and Component Datasheets (Plus Cross Reference Data)	Short Form	PDF
2SB620	Unknown	Transistor Shortform Datasheet & Cross References	Scan	PDF
2SB620	Unknown	Japanese Transistor Cross References (2S)	Scan	PDF
2SB620	Unknown	Cross Reference Datasheet	Scan	PDF
2SB620	Unknown	Transistor Substitution Data Book 1993	Scan	PDF
2SB620	Unknown	The Japanese Transistor Manual 1981	Scan	PDF
2SB620	Unknown	Shortform IC and Component Datasheets (Plus Cross Reference Data)	Short Form	PDF

2SB620	Unknown	Shortform Data and Cross References (Misc Datasheets)	Short Form	PDF
2SB621	Panasonic	Transistor for low-frequency driver amplification. Complementary to 2SD0592 (2SD592)	Original	PDF
2SB621	Panasonic	Silicon PNP Transistor	Original	PDF
2SB621	Panasonic	Silicon PNP epitaxial planer type	Original	PDF
2SB621	Various Russian Datasheets	Transistor	Original	PDF
2SB621	Micro Electronics	750mW NPN Silicon Transistor	Scan	PDF

2SB62 Datasheets Context Search

Catalog Datasheet	MFG & Type	PDF	Document Tags
2SB628 Abstract: IC03a Text: SavantIC Semiconductor Product Specification 2SB628 Silicon PNP Power Transistors DESCRIPTION •With TO-220C package ·High VCEO APPLICATIONS ·Low frequency power amplifier color TV vertical deflection output PINNING PIN DESCRIPTION 1 Emitter 2 Collector;connected to	Original	PDF	2SB628 O-220C -120V; 2SB628 IC03a
2SB624 Abstract: 2SB624BV3 2SB624-BV4 2SB624-BV1 2SB624-BV2 2SB624-BV3 2SB624-BV5 2SD596 2SB624BV2 2SB624BV4 Text: 2SB624 -0.7A , -30V PNP Silicon Plastic Encapsulated Transistor Elektronische Bauelemente RoHS Compliant Product A suffix of “-C” specifies halogen & lead-free SOT-23 FEATURES   High DC Current Gain. hFE：200 Typ. (VCE= -1V, IC= -100mA) Complimentary to 2SD596	Original	PDF	2SB624 OT-23 hFE200 -100mA) 2SD596 2SB624-BV1 2SB624-BV2 2SB624-BV3 2SB624-BV4 2SB624-BV5 2SB624 2SB624BV3 2SB624-BV4 2SB624-BV1 2SB624-BV2 2SB624-BV3 2SB624-BV5 2SD596 2SB624BV2 2SB624BV4
BV4 pnp Abstract: BV4 transistor 2SB624 2SD596 Text: JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD SOT-23 Plastic-Encapsulate Transistors 2SB624 TRANSISTOR PNP SOT-23 1.BASE 2.EMITTER FEATURES 3.COLLECTOR High DC current gain. hFE:200 TYP.(VCE=-1V,IC=-100mA) Complimentary to 2SD596. z z MAXIMUM RATINGS (TA=25℃ unless otherwise noted)	Original	PDF	OT-23 2SB624 OT-23 -100mA) 2SD596. -100mA -700mA -70mA -10mA BV4 pnp BV4 transistor 2SB624 2SD596
Untitled Abstract: No abstract text available Text: JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD SOT-23 Plastic-Encapsulate Transistors 2SD596 SOT-23 TRANSISTOR NPN FEATURES z High DC Current gain. z Complimentary to 2SB624 1.BASE 2.EMITTER 3.COLLECTOR MAXIMUM RATINGS (Ta=25℃ unless otherwise noted)	Original	PDF	OT-23 2SD596 OT-23 2SB624 100mA 700mA 700mA, 10MHZ
BSW45A Abstract: LOW-POWER SILICON PNP p60n 2SA1299E BC212BP Text: RF LOW-POWER SILICON PNP Item Number Part Number V BR CEO 5 10 15 20 25 30 35 40 45 50 55 60 65 70 75 80 85 90 95 BC212LA BCW86 BCW86 BCW86 2SB637K 2SB710A 2SA891 2SA891 2SA891 2SB621A >= Manufacturer V(BR)CEO fr (V) (Hz) See Index Micro Elecs Semi Inc Advncd Semi	Original	PDF	BC212LA BCW86 2SB637K 2SB710A 2SA891 2SB621A BSW45A LOW-POWER SILICON PNP p60n 2SA1299E BC212BP
2SB0621 Abstract: 2SB0621A 2SB621 2SB621A 2SD0592 2SD0592A 2SD592 2SD592A Text: Transistor 2SB0621, 2SB0621A 2SB621, 2SB621A Silicon PNP epitaxial planer type For low-frequency output amplification Complementary to 2SD0592 (2SD592) and 2SD0592A (2SD592A) Unit: mm 5.0±0.2 Low collector to emitter saturation voltage VCE(sat). High transition frequency fT.	Original	PDF	2SB0621, 2SB0621A 2SB621, 2SB621A) 2SD0592 2SD592) 2SD0592A 2SD592A) 2SB0621 2SB0621 2SB0621A 2SB621 2SB621A 2SD0592 2SD0592A 2SD592 2SD592A
2SB624 Abstract: 2SD596 Text: 2SB624 SILICON TRANSISTOR AUDIO FREQUENCY POWER AMPLIFIER SOT-23 3 PNP SILICON EPITAXIAL TRANSISTOR MINI MOLD 1 DESRIPTION 2 2SB624 is designed for use in small type equipements especially 1. 1.BASE 2.EMITTER 3.COLLECTOR mended for hybrid integrated circuit and other applications.	Original	PDF	2SB624 OT-23 The2SB624 -100mA) 2SD596 2SB624
2SB624 Abstract: No abstract text available Text: 2SB624 PNP Epitaxial Planar Transistors 3 P b Lead Pb -Free 1 2 SC-59 ABSOLUTE MAXIMUM RATINGS (TA=25˚C) Symbol Limits Unit Collector-Base Voltage VCBO -30 V Collector-Emitter Voltage VCEO -25 V Emitter-Base Voltage VEBO -5 V Collector Current IC -700 mA	Original	PDF	2SB624 SC-59 -500mA -250mA -200mA -100mA 16-Aug-05 SC-59 2SB624
Untitled Abstract: No abstract text available Text: JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD SOT-23 Plastic-Encapsulate Transistors 2SD596 SOT-23 TRANSISTOR NPN FEATURES z High DC Current gain.hFE:200 TYP.(VCE=1V,IC=100mA) z Complimentary to 2SB624 1.BASE 2.EMITTER 3.COLLECTOR MAXIMUM RATINGS (TA=25℃ unless otherwise noted)	Original	PDF	OT-23 2SD596 OT-23 100mA) 2SB624 100mA 700mA 700mA, 10MHZ
2SB624 Abstract: 2SD596 BV4 transistor Text: JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD SOT-23-3L Plastic-Encapsulate Transistors 2SB624 SOT-23-3L TRANSISTOR PNP FEATURES 1.BASE High DC current gain. hFE:200 TYP.(VCE=-1V,IC=-100mA) Complimentary to 2SD596. z z 2.EMITTER 3.COLLECTOR MAXIMUM RATINGS (TA=25℃ unless otherwise noted)	Original	PDF	OT-23-3L 2SB624 OT-23-3L -100mA) 2SD596. -100mA -700mA -700mA, -70mA -10mA 2SB624 2SD596 BV4 transistor
bv5 300 Abstract: 2SB624 Text: 2SB624 PNP Epitaxial Planar Transistors 3 P b Lead Pb -Free 2 1 SC-59 ABSOLUTE MAXIMUM RATINGS (TA=25˚C) Symbol Limits Unit Collector-Base Voltage VCBO -30 V Collector-Emitter Voltage VCEO -25 V Emitter-Base Voltage VEBO -5 V Collector Current IC -700 A Collector Power Dissipation	Original	PDF	2SB624 SC-59 -500mA -250mA -200mA -100mA 16-Aug-05 SC-59 bv5 300 2SB624
sot-23 bv2 Abstract: marking BV4 2SB624 Text: JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD SOT-23-3L Plastic-Encapsulate Transistors 2SB624 TRANSISTOR PNP SOT-23-3L FEATURES 1. BASE Power dissipation 3. COLLECTOR W (Tamb=25℃) 2. 80¡ À0. 05 0. 95¡ À0. 025 Collector current -0.7 A ICM: Collector-base voltage	Original	PDF	OT-23-3L 2SB624 OT-23-3L -100mA -700mA -70mA -10mA sot-23 bv2 marking BV4 2SB624
2SD592 Abstract: 2SD592A transistor 2SD592a 2SB621 2SB621A Text: Transistor 2SD592, 2SD592A Silicon NPN epitaxial planer type For low-frequency output amplification Complementary to 2SB621 and 2SB621A Unit: mm 5.0±0.2 Large collector power dissipation PC. Low collector to emitter saturation voltage VCE sat . • Absolute Maximum Ratings	Original	PDF	2SD592, 2SD592A 2SB621 2SB621A 2SD592 2SD592 2SD592A transistor 2SD592a 2SB621A
2SB624 Abstract: No abstract text available Text: BL Galaxy Electrical Production specification Silicon Epitaxial Planar Transistor FEATURES z Pb High DC current gain.hFE: 200TYP Lead-free VCE=-1.0V,IC=-100mA z 2SB624 Complimentary to the 2SD596. APPLICATIONS z Audio frequency amplifier. z Switching appilication.	Original	PDF	2SB624 200TYP -100mA) 2SD596. OT-23 BL/SSSTC014 2SB624

2SB621 Abstract: 2SB621A 2SD592 2SD592A Text: Transistor 2SB621, 2SB621A Silicon PNP epitaxial planer type For low-frequency output amplification Complementary to 2SD592 and 2SD592A Unit: mm 5.0±0.2 Low collector to emitter saturation voltage VCE sat . High transition frequency fT. • Absolute Maximum Ratings	Original	PDF	2SB621, 2SB621A 2SD592 2SD592A 2SB621 2SB621 2SB621A 2SD592A
sot-23 bv4 Abstract: 2SB624 BV4 sot23 TRANSISTOR BV3 marking BV4 SOT23 BV2 2SD596 BV3 marking BV5 SOT-23 transistor BV4 Text: BL Galaxy Electrical Production specification Silicon Epitaxial Planar Transistor FEATURES z Pb High DC current gain.hFE: 200TYP Lead-free VCE=-1.0V,IC=-100mA z 2SB624 Complimentary to the 2SD596. APPLICATIONS z Audio frequency amplifier. z Switching appilication.	Original	PDF	2SB624 200TYP -100mA) 2SD596. OT-23 BL/SSSTC014 sot-23 bv4 2SB624 BV4 sot23 TRANSISTOR BV3 marking BV4 SOT23 BV2 2SD596 BV3 marking BV5 SOT-23 transistor BV4
hFE-200 transistor PNP Abstract: 2SB624 Text: 2SB624 SOT-23 Transistor PNP SOT-23 1.BASE 2.EMITTER 3.COLLECTOR Features High DC current gain. hFE:200 TYP.(VCE=-1V,IC=-100mA) Complimentary to 2SD596. MAXIMUM RATINGS (TA=25℃ unless otherwise noted) Symbol Parameter Value Units VCBO Collector-Base Voltage	Original	PDF	2SB624 OT-23 OT-23 -100mA) 2SD596. -700mA -70mA -10mA -100A, hFE-200 transistor PNP 2SB624
2SB0621 Abstract: 2SB0621A 2SB621 2SB621A 2SD0592 2SD0592A 2SD592 2SD592A Text: Transistor 2SD0592, 2SD0592A 2SD592, 2SD592A Silicon NPN epitaxial planer type For low-frequency output amplification Complementary to 2SB0621 (2SB621) and 2SB0621A (2SB621A) Unit: mm 5.0±0.2 Large collector power dissipation PC. Low collector to emitter saturation voltage VCE(sat).	Original	PDF	2SD0592, 2SD0592A 2SD592, 2SD592A) 2SB0621 2SB621) 2SB0621A 2SB621A) 2SD0592 2SB0621 2SB0621A 2SB621 2SB621A 2SD0592 2SD0592A 2SD592 2SD592A
D1802 Abstract: TRANSISTOR BV3 2SB624A 2SD596A nec marking power amplifier Text: DATA SHEET SILICON TRANSISTOR 2SB624A AUDIO FREQUENCY POWER AMPLIFIER PNP SILICON EPITAXIAL TRANSISTOR MINI MOLD FEATURES PACKAGE DRAWING Unit: mm • Complementary to NEC 2SD596A NPN Transistor. • High DC Current Gain: hFE = 200 TYP. (VCE = −1.0 V, IC = −100 mA)	Original	PDF	2SB624A 2SD596A D1802 TRANSISTOR BV3 2SB624A nec marking power amplifier
2SB624 Abstract: 2SD596 Text: NEC SILICON TRANSISTOR 2SB624 ^3£CTR0N DEVICE AUDIO FREQUENCY POWER AMPLIFIER PNP SILICON EPITAXIAL TRANSISTOR M IN I MOLD DESCRIPTION PACKAGE DIMENSIONS The 2SB624 is designed fo r use in small type equipments especially recom in millimeters 2.8 + 0.2	OCR Scan	PDF	2SB624 2SB624 2SD596 NECTOKJ22686
2SB621A Abstract: 2SB621 2SD592 2SD592A Text: 2SD592,A SILICON TRANSISTORS TO-92 2SB621,A P N P & 2SD592,A (NPN) are complementary silicon planar epitaxial transistors designed for AF output amplifiers. •»I ECB ABSOLUTE MAXIMUM RATINGS Collector-Base Voltage Collector-Emitter Voltage Emittter-Base Voltage	OCR Scan	PDF	2SD592 2SB621 2SD592A 2SB621A 750mW /2SD592 2SB621A
Untitled Abstract: No abstract text available Text: S IL IC O N T R A N S IS T O R 2SB624 A U D IO F REQ U EN CY PO W ER A M P L IF IE R P N P S IL IC O N E P IT A X IA L T R A N S IS T O R M IN I M O L D D E S C R IP T IO N P A C K A G E D IM E N S IO N S The 2SB624 is designed for use in small type equipments especially recom	OCR Scan	PDF	2SB624 2SB624
2SB641 r Abstract: 2sb641 2SD659 2SD689 2SB603 2sb678 2SB647B 2SB646A 2SB646 2SB686 Text: - 56 - Ta=25‘ C , * E P f i T c = 2 5 eC m £ % 2SB603 B M HV LS SW 2SB605 B M V cB O VcEO (V) (V) ic (D O (A) -500 -500 -0. 5 L F PA -60 -50 -0. 7 LF A -30 -2 5 -1 LF A -60 -5 0 -1 2SB624 fö T B iS LF A -30 -25 2SB631 H # IF PA/MS SW -100 2SB631K H #	OCR Scan	PDF	2SB603 2SB605 2SB621 2SB621A 2SB624 2SB631 -0B648 2SD668A O-126) 2SB648A 2SB641 r 2sb641 2SD659 2SD689 2sb678 2SB647B 2SB646A 2SB646 2SB686
IC MAX 797 Abstract: 2SD608 2SB628 S3V77 251C Text: 2SD608/2SB628 2SD 608/2SB 628 N PN /PN P x >J n V h ÿ V ' / X ? / N P N / P N P SILICON EPIT A X IA L TRANSISTOR y ^ " ffl/A u d io Frequency Power / i & i Ê M Z 'i "j 8 S/FEA TU RES • *Hf50/PACKAGE DIMENSIONS Unit:mm 100~150 Wffl-’'" V —T V 7‘CO K iM 'v lg i: L T S ig o	OCR Scan	PDF	2SD608/2SB628 2SD608 2SB628 Hf50/PACKAGE 2SB628 2SB628/2SD608 PWS350//S, IC MAX 797 S3V77 251C

2SB62 Search Results

2SB62 Result Highlights (5)

2SB62 Price and Stock

Hirose Electric Co Ltd AP105-GT10R-2022S-B(62)

Mitsubishi Electric 2SB627BD

Mitsubishi Electric 2SB621

NEC Electronics Group 2SB624-T1B

NEC Electronics Group 2SB624-T1B(BV3)

2SB62 Datasheets (119)

2SB62 Datasheets Context Search

2SB628

2SB624

BV4 pnp

Untitled

BSW45A

2SB0621

2SB624

2SB624

Untitled

2SB624

bv5 300

sot-23 bv2

2SD592

2SB624

2SB621

sot-23 bv4

hFE-200 transistor PNP

2SB0621

D1802

2SB624

2SB621A

Untitled

2SB641 r

IC MAX 797