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    LIGHT-EMITTING DIODE INP Search Results

    LIGHT-EMITTING DIODE INP Result Highlights (5)

    Part ECAD Model Manufacturer Description Download Buy
    CUZ24V Toshiba Electronic Devices & Storage Corporation Zener Diode, 24 V, USC Visit Toshiba Electronic Devices & Storage Corporation
    XCUZ13V Toshiba Electronic Devices & Storage Corporation Zener Diode, 13.0 V, USC Visit Toshiba Electronic Devices & Storage Corporation
    XCUZ36V Toshiba Electronic Devices & Storage Corporation Zener Diode, 36.0 V, USC Visit Toshiba Electronic Devices & Storage Corporation
    CUZ12V Toshiba Electronic Devices & Storage Corporation Zener Diode, 12 V, USC Visit Toshiba Electronic Devices & Storage Corporation
    MUZ5V6 Toshiba Electronic Devices & Storage Corporation Zener Diode, 5.6 V, USM Visit Toshiba Electronic Devices & Storage Corporation

    LIGHT-EMITTING DIODE INP Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    Untitled

    Abstract: No abstract text available
    Text: SOLID STATE D I V I S I O N LIGHT EMITTING DIODE LED Light Emitting Diode Light emitting diodes LEDs are opto-semiconductors that convert electric energy into light energy. Compared to semiconductor lasers (laser diodes or LD), LEDs offer advantages such


    Original     		PDF DK-8381 KLED0002E01

    LN69

    Abstract: No abstract text available
    Text: Infrared Light Emitting Diodes LN69 GaAs Infrared Light Emitting Diode Unit : mm Emitted light spectrum suited for silicon photodetectors : λP = 940 nm typ. Good radiant power output linearity with respect to input current Long lifetime, high reliability


    Original     		PDF

    LN69

    Abstract: No abstract text available
    Text: Infrared Light Emitting Diodes LN69 GaAs Infrared Light Emitting Diode Unit : mm Emitted light spectrum suited for silicon photodetectors : λP = 940 nm typ. Good radiant power output linearity with respect to input current Long lifetime, high reliability


    Original     		PDF 100Hz LN69

    100v 3A silicon controlled rectifier

    Abstract: E91231 IS605 IS6051 rectifier 400V 5A light activated scr
    Text: IS6051 LOW INPUT CURRENT INFRA-RED EMITTING DIODE & LIGHT ACTIVATED SCR Dimensions in mm 2.54 APPROVALS l UL recognised, File No. E91231 7.0 6.0 7.62 max. DESCRIPTION The IS6051 is an optically coupled isolator consisting of infrared light emitting diode and a


    Original     		PDF IS6051 E91231 IS6051 DB92611-AAS/A2 100v 3A silicon controlled rectifier E91231 IS605 rectifier 400V 5A light activated scr

    LN172

    Abstract: Infrared Emitting Diode DSA003761
    Text: Infrared Light Emitting Diodes LN172 GaAlAs Infrared Light Emitting Diode Unit : mm ø4.2 +0.2 –0.1 Features High-power output, high-efficiency : PO = 12 mW typ. Light emitting spectrum suited for silicon photodetectors : λP = 900 nm (typ.) 2.4±0.3 12.7 min.


    Original     		PDF LN172 100Hz LN172 Infrared Emitting Diode DSA003761

    LN172

    Abstract: No abstract text available
    Text: Infrared Light Emitting Diodes LN172 GaAlAs Infrared Light Emitting Diode Unit : mm ø4.2 +0.2 –0.1 Features High-power output, high-efficiency : PO = 12 mW typ. Light emitting spectrum suited for silicon photodetectors : λP = 900 nm (typ.) 2.4±0.3 12.7 min.


    Original     		PDF LN172 10nductor LN172

    AVERAGE QUASI PEAK AND PEAK DETECTOR

    Abstract: nixie tube circuit
    Text: • PRODUCT EMITTING DIODES LIGHT EMITTING DIODES APPLICATION NOTES Among photo semiconductor devices, the light emitting diode only exists as a P-N junction


    OCR Scan     		PDF

    Untitled

    Abstract: No abstract text available
    Text: Panasonic Infrared Light Emitting Diodes LN66 NC GaAs Infrared Light Emitting Diode For optical control systems • Features • • • • • High-power output, high-efficiency :P0 = 8 mW (typ.) Light emitting spectrum suited for silicon photodetectors


    OCR Scan     		PDF 100mA

    IR Blue Light infrared

    Abstract: LN66
    Text: Panasonic Infrared Light Emitting Diodes LN66 NC GaAs Infrared Light Emitting Diode For optical control systems • Features • • • • • High-power output, high-efficiency :P0 = 8 mW (typ.) Light emitting spectrum suited for silicon photodetectors


    OCR Scan     		PDF 100mA IR Blue Light infrared LN66

    Untitled

    Abstract: No abstract text available
    Text: Panasonic Infrared Light Emitting Diodes LN172 GaAIAs Infrared Light Emitting Diode For optical control systems • Features • High-power output, high-efficiency : PQ = 12 mW typ. • Light emitting spectrum suited for silicon photodetectors : A,P = 900 nm (typ.)


    OCR Scan     		PDF LN172 100mA

    LNA2801L

    Abstract: No abstract text available
    Text: Panasonic Infrared Light Emitting Diodes LNA2801L GaAIAs on GaAs Infrared Light Emitting Diode For optical control systems • Features • H igh-pow er output, high-efficiency : Ie = 6 m W /sr min. • Light emitting spectrum suited for silicon photodetectors


    OCR Scan     		PDF LNA2801L LNA2801L

    Untitled

    Abstract: No abstract text available
    Text: Panasonic Infrared Light Emitting Diodes LNA2801L GaAIAs on G aAs Infrared Light Emitting Diode For optical control systems • Features • • • • High-power output, high-efficiency : Ie = 6 mW /sr min. Light emitting spectrum suited for silicon photodetectors


    OCR Scan     		PDF LNA2801L

    LN66A

    Abstract: No abstract text available
    Text: Panasonic Infrared Light Emitting Diodes LN66A G aAs Infrared Light Emitting Diode For optical control systems • Features • • • • • High-power output, high-efficiency : Ie = 9 mW /sr min. Light emitting spectrum suited for silicon photodetectors


    OCR Scan     		PDF LN66A 0102Q. LN66A

    Untitled

    Abstract: No abstract text available
    Text: Panasonic Infrared Light Emitting Diodes LNA2801L GaAIAs on G aAs Infrared Light Emitting Diode For optical control systems • Features • • • • High-power output, high-efficiency : Ie = 6 mW /sr min. Light emitting spectrum suited for silicon photodetectors


    OCR Scan     		PDF LNA2801L 0102Q.

    Untitled

    Abstract: No abstract text available
    Text: Panasonic Infrared Light Emitting Diodes LN66 G aAs Infrared Light Emitting Diode For optical control systems • Features • • • • • High-power output, high-efficiency : PQ = 8 mW typ. Light emitting spectrum suited for silicon photodetectors Good radiant power output linearity with respect to input current


    OCR Scan     		PDF 0102Q.

    LN69

    Abstract: No abstract text available
    Text: Panasonic Infrared Light Emitting Diodes LN69 GaAs Infrared Light Emitting Diode For optical control systems • Features • H igh-pow er output, high-efficiency : Ie = 3.5 m W /sr min. • Light emitting spectrum suited for silicon photodetectors : XP = 940 nm (typ.)


    OCR Scan     		PDF

    LN172

    Abstract: No abstract text available
    Text: Panasonic Infrared Light Emitting Diodes LN172 GaAIAs Infrared Light Emitting Diode For optical control systems • Features • H igh-pow er output, high-efficiency : P Q = 12 mW typ. • Light emitting spectrum suited for silicon photodetectors : X P = 900 nm (typ.)


    OCR Scan     		PDF LN172 100mA 100Hz LN172

    LN68

    Abstract: No abstract text available
    Text: Panasonic Infrared Light Emitting Diodes LN68 GaAs Infrared Light Emitting Diode For optical control systems • Features • H igh-pow er output, high-efficiency : P Q = 5 mW typ. • Light emitting spectrum suited for silicon photodetectors : XP = 950 nm (typ.)


    OCR Scan     		PDF

    Untitled

    Abstract: No abstract text available
    Text: Panasonic Infrared Light Emitting Diodes LN69 G aAs Infrared Light Emitting Diode For optical control systems • Features • High-power output, high-efficiency : Ie = 3.5 mW /sr min. • Light emitting spectrum suited for silicon photodetectors : A,P = 940 nm (typ.)


    OCR Scan     		PDF

    Untitled

    Abstract: No abstract text available
    Text: Panasonic Infrared Light Emitting Diodes LN68 GaAs Infrared Light Emitting Diode For optical control systems • Features • H igh-pow er output, high-efficiency : P Q = 5 mW typ. • Light emitting spectrum suited for silicon photodetectors : XP = 950 nm (typ.)


    OCR Scan     		PDF

    photo sensor pin diagram

    Abstract: transistor 1BT transistor 1BT 12 nIc 4 PHOTO SENSOR of application OCS33 vak-50v 1Bt 60
    Text: OKI electronic components OCS33 Optical PNPN Switches GENERAL DESCRIPTION The OCS33 is an optical PNPN switch, combining a GaAs infrared light emitting diode and a silicon PNPN photo sensor in a single 8-pin plastic package. The GaAs light emitting diode acts as the input


    OCR Scan     		PDF OCS33 b724S40 OCS33 72M2M0 photo sensor pin diagram transistor 1BT transistor 1BT 12 nIc 4 PHOTO SENSOR of application vak-50v 1Bt 60

    Infrared Emitting Diode

    Abstract: LN66
    Text: Panasonic Infrared Light Emitting Diodes LN66 L GaAs Infrared Light Emitting Diode For optical control systems • Features • H igh-pow er output, high-efficiency :P0 = 8 mW (typ.) • Light emitting spectrum suited for silicon photodetectors • G ood radiant pow er output linearity with respect to input current


    OCR Scan     		PDF 100mA Infrared Emitting Diode LN66

    LN175

    Abstract: No abstract text available
    Text: Panasonic Infrared Light Emitting Diodes LN175 GaAIAs Infrared Light Emitting Diode For optical control systems • Features • H igh-pow er output, high-efficiency : P Q = 12 mW typ. • Light emitting spectrum suited for silicon photodetectors : XP = 900 nm (typ.)


    OCR Scan     		PDF LN175 LN175

    Untitled

    Abstract: No abstract text available
    Text: Panasonic Infrared Light Emitting Diodes LN166 G aAs Infrared Light Emitting Diode 05.0+0.2 For optical control systems • Features • • • • • High-power output, high-efficiency : Ie = 10 mW /sr min. Light emitting spectrum suited for silicon photodetectors


    OCR Scan     		PDF LN166 100Hz