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    Ruland Manufacturing Co Inc IPLN-6-6-1/2X13-F

    INDEXING PLUNGER WITH LOCK-OUT
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    DigiKey IPLN-6-6-1/2X13-F Bag 5 1
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    Panasonic Electronic Components LN66F

    EMITTER IR 950NM 50MA
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    Panasonic Electronic Components LN660000R

    EMITTER IR 950NM 100MA T 1 3/4
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    STL STL-N-660

    4-PORT PCIE 2.5GB REALTEK ETHERN
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    DigiKey STL-N-660 Box 1
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    Ruland Manufacturing Co Inc IPLN-6-6-1-2X13-F

    INDEXING PLUNGER WITH LOCK-OUT
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    DigiKey IPLN-6-6-1-2X13-F Bag 1
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    LN66 Datasheets (37)

    Part ECAD Model Manufacturer Description Curated Datasheet Type PDF
    LN66 Panasonic GaAs Infrared Light Emitting Diode Original PDF
    LN66 Panasonic GaAs Infrared Light Emitting Diode Original PDF
    LN66 Unknown The Optical Devices Data Book (Japanese) Scan PDF
    LN66 Panasonic Light Emitting Diodes Scan PDF
    LN66 Panasonic Light Emitting Diodes Scan PDF
    LN66 Panasonic Light Emitting Diodes Scan PDF
    LN66 Panasonic Light Emitting Diodes LED Scan PDF
    LN660000R Panasonic Infrared, UV, Visible Emitters, Optoelectronics, INFRARED LIGHT EMITTING DIODE Original PDF
    LN66A Panasonic GaAs infrared light emitting diode For optical control systems Original PDF
    LN66A Panasonic GaAs Infrared Light Emitting Diode Original PDF
    LN66A Unknown The Optical Devices Data Book (Japanese) Scan PDF
    LN66A Panasonic Light Emitting Diodes Scan PDF
    LN66A Panasonic Light Emitting Diodes LED Scan PDF
    LN66A Panasonic Light Emitting Diodes LED Scan PDF
    LN66AL Panasonic GaAs infrared light emitting diode For optical control systems Original PDF
    LN66F Panasonic GaAs Infrared Light Emitting Diode Original PDF
    LN66F Panasonic GaAs Infrared Light Emitting Diode Original PDF
    LN66F Unknown The Optical Devices Data Book (Japanese) Scan PDF
    LN66F Panasonic Light Emitting Diodes Scan PDF
    LN66F Panasonic Light Emitting Diodes LED Scan PDF

    LN66 Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    Untitled

    Abstract: No abstract text available
    Text: This product complies with the RoHS Directive EU 2002/95/EC . Infrared Light Emitting Diodes LN66F GaAs Infrared Light Emitting Diode For optical control systems • Features  High-power output, high-efficiency: Ie = 13.0 mW/sr (min.)  Emitted light spectrum suited for silicon photodetectors


    Original     		PDF 2002/95/EC) LN66F

    Untitled

    Abstract: No abstract text available
    Text: Infrared Light Emitting Diodes LN66F GaAs Infrared Light Emitting Diode For remote control systems Unit: mm 7.65±0.2 1.0 3.6±0.3 (1.0) 13.5±1.0 • High-power output, high-efficiency: Ie = 13.0 mW/sr (min.) • Emitted light spectrum suited for silicon photodetectors


    Original     		PDF LN66F

    Untitled

    Abstract: No abstract text available
    Text: This product complies with the RoHS Directive EU 2002/95/EC . Infrared Light Emitting Diodes LNA2902L (LN66A(L) GaAs Infrared Light Emitting Diode For optical control systems • Features  High-power output, high-efficiency: Ie = 9 mW/sr (min.)  Emitted light spectrum suited for silicon photodetectors


    Original     		PDF 2002/95/EC) LNA2902L LN66A

    LN66L

    Abstract: No abstract text available
    Text: Infrared Light Emitting Diodes LN66L GaAs Infrared Light Emitting Diode Unit : mm ø5.0±0.2 1.0 7.65±0.2 Not soldered 2.25 For optical control systems Features High-power output, high-efficiency :PO = 8 mW typ. Good radiant power output linearity with respect to input current


    Original     		PDF LN66L LN66L

    LN66F

    Abstract: 1000 nm light emitting diode
    Text: Infrared Light Emitting Diodes LN66F GaAs Infrared Light Emitting Diode Unit : mm ø5.0±0.2 7.65±0.2 Not soldered Features High-power output, high-efficiency : Ie = 13.0 mW/sr min. 1.0 For light source of remote control systems 13.5±1.0 11.5±1.0 3.6±0.3


    Original     		PDF LN66F 100Hz LN66F 1000 nm light emitting diode

    LN66

    Abstract: No abstract text available
    Text: Infrared Light Emitting Diodes LN66 GaAs Infrared Light Emitting Diode Unit : mm ø5.0±0.2 7.65±0.2 Not soldered Features High-power output, high-efficiency : PO = 8 mW typ. 1.0 For optical control systems Good radiant power output linearity with respect to input current


    Original     		PDF

    LN66F

    Abstract: No abstract text available
    Text: Infrared Light Emitting Diodes LN66F GaAs Infrared Light Emitting Diode Unit : mm ø5.0±0.2 7.65±0.2 Not soldered Features High-power output, high-efficiency : Ie = 13.0 mW/sr min. 1.0 For light source of remote control systems 13.5±1.0 11.5±1.0 3.6±0.3


    Original     		PDF LN66F LN66F

    LN66

    Abstract: No abstract text available
    Text: Infrared Light Emitting Diodes LN66 GaAs Infrared Light Emitting Diode Unit : mm M Di ain sc te on na tin nc ue e/ d 7.65±0.2 For optical control systems Not soldered ø5.0±0.2 Features ue pl d in an c se ed lud pl vi an m m es si tf ed ain ai fo ol t n l


    Original     		PDF

    LN66A

    Abstract: LNA2903L
    Text: This product complies with the RoHS Directive EU 2002/95/EC . Infrared Light Emitting Diodes LNA2903L (LN66A) GaAs Infrared Light Emitting Diode For remote control systems • Features  High-power output, high-efficiency: Ie = 9 mW/sr (min.)  Emitted light spectrum suited for silicon photodetectors


    Original     		PDF 2002/95/EC) LNA2903L LN66A) LN66A LNA2903L

    ir 21015

    Abstract: Infrared Emitting Diode LN66
    Text: Infrared Light Emitting Diodes LN66 NC GaAs Infrared Light Emitting Diode Unit : mm ø5.0±0.2 7.65±0.2 Not soldered Features High-power output, high-efficiency :PO = 8 mW (typ.) 1.0 For optical control systems Good radiant power output linearity with respect to input current


    Original     		PDF

    Untitled

    Abstract: No abstract text available
    Text: This product complies with the RoHS Directive EU 2002/95/EC . Infrared Light Emitting Diodes LNA2902L (LN66A(L) GaAs Infrared Light Emitting Diode For optical control systems • Features  Absolute Maximum Ratings Ta = 25°C Parameter di p Pl lan nclu


    Original     		PDF 2002/95/EC) LNA2902L LN66A

    Untitled

    Abstract: No abstract text available
    Text: This product complies with the RoHS Directive EU 2002/95/EC . Infrared Light Emitting Diodes LNA2903L (LN66A) GaAs Infrared Light Emitting Diode For remote control systems • Features  Absolute Maximum Ratings Ta = 25°C Parameter di p Pl lan nclu ea


    Original     		PDF 2002/95/EC) LNA2903L LN66A)

    Untitled

    Abstract: No abstract text available
    Text: Infrared Light Emitting Diodes LN66 GaAs Infrared Light Emitting Diode Unit : mm 7.65±0.2 For optical control systems Not soldered ø5.0±0.2 M Di ain sc te on na tin nc ue e/ d Features 1.0 High-power output, high-efficiency : PO = 8 mW typ. Absolute Maximum Ratings (Ta = 25˚C)


    Original     		PDF

    Untitled

    Abstract: No abstract text available
    Text: Panasonic Infrared Light Emitting Diodes LN66F G aAs Infrared Light Emitting Diode For light source of remote control systems • Features • High-power output, high-efficiency : Ie = 13.0 mW/sr min. • Light emitting spectrum suited for silicon photodetectors


    OCR Scan     		PDF LN66F

    Untitled

    Abstract: No abstract text available
    Text: Panasonic Infrared Light Emitting Diodes LN66 NC G aAs Infrared Light Em itting Diode For optical control systems • Features • • • • • High-power output, high-efficiency :PQ = 8 mW (typ.) Light emitting spectrum suited for silicon photodetectors


    OCR Scan     		PDF 100mA

    8893 single chip tv processor

    Abstract: transistor tt 2170 em AN7156N an8294nsb Color TV circuit 8893 AN8782SB mn150832 mip160 mn12510 mn662741
    Text: Application Block Diagrams • Video Applications VC R System Remote Control Transmission MN171608/9 MN15*13 LN66A I Display I Cylinder Motor Drive AN3813/14/15 f FL Dr MN12510 Capstan Motor Drive AN3840N V r I Remote Control Reception}] MN6750*8/9/6755—7


    OCR Scan     		PDF MN171608/9 LN66A MN12510 AN3813/14/15 AN3840N PNA4601M MN187* MN6750* AN3126/29 AN5179/82N 8893 single chip tv processor transistor tt 2170 em AN7156N an8294nsb Color TV circuit 8893 AN8782SB mn150832 mip160 mn662741

    LN66F

    Abstract: No abstract text available
    Text: Panasonic Infrared Light Emitting Diodes LN66F GaAs Infrared Light Emitting Diode For light source of remote control systems • Features • • • • High-power output, high-efficiency : Ie = 13.0 mW/sr min. Light emitting spectrum suited for silicon photodetectors


    OCR Scan     		PDF LN66F LN66F

    Untitled

    Abstract: No abstract text available
    Text: Panasonic Infrared Light Emitting Diodes LN66 G aAs Infrared Light Emitting Diode For optical control systems • Features • • • • • High-power output, high-efficiency : PQ = 8 mW typ. Light emitting spectrum suited for silicon photodetectors Good radiant power output linearity with respect to input current


    OCR Scan     		PDF 0102Q.

    a950

    Abstract: No abstract text available
    Text: Panasonic Infrared Light Emitting Diodes LN66F G aAs Infrared Light Emitting Diode For light source of remote control systems • Features • • • • High-power output, high-efficiency : Ie = 13.0 mW /sr min. Light emitting spectrum suited for silicon photodetectors


    OCR Scan     		PDF LN66F 0102Q. a950

    Untitled

    Abstract: No abstract text available
    Text: Panasonic Infrared Light Emitting Diodes LN66 L GaAs Infrared Light Emitting Diode For optical control systems • Features • H igh-pow er output, high-efficiency :P0 = 8 mW (typ.) • Light emitting spectrum suited for silicon photodetectors • G ood radiant pow er output linearity with respect to input current


    OCR Scan     		PDF 100mA

    Untitled

    Abstract: No abstract text available
    Text: Panasonic Infrared Light Emitting Diodes LN66 L G aAs Infrared Light Em itting Diode Unit : mm 05.O±O.2 For optical control systems • Features • • • • • • High-power output, high-efficiency :PQ = 8 mW (typ.) Light emitting spectrum suited for silicon photodetectors


    OCR Scan     		PDF 100mA

    Untitled

    Abstract: No abstract text available
    Text: Panasonic Infrared Light Emitting Diodes LN66 G aAs Infrared Light Emitting Diode For optical control systems • Features • • • • • High-power output, high-efficiency : PQ = 8 mW typ. Light emitting spectrum suited for silicon photodetectors Good radiant power output linearity with respect to input current


    OCR Scan     		PDF

    Infrared Emitting Diode

    Abstract: LN66
    Text: Panasonic Infrared Light Emitting Diodes LN66 L GaAs Infrared Light Emitting Diode For optical control systems • Features • H igh-pow er output, high-efficiency :P0 = 8 mW (typ.) • Light emitting spectrum suited for silicon photodetectors • G ood radiant pow er output linearity with respect to input current


    OCR Scan     		PDF 100mA Infrared Emitting Diode LN66

    VF 100 PANASONIC

    Abstract: LN66A
    Text: Panasonic Infrared Light Emitting Diodes LN66A GaAs Infrared Light Emitting Diode For optical control systems • Features • H igh-pow er output, high-efficiency : Ie = 9 m W /sr min. • Light emitting spectrum suited for silicon photodetectors • G ood radiant pow er output linearity with respect to input current


    OCR Scan     		PDF LN66A VF 100 PANASONIC LN66A