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Panasonic Electronic Components LN66F EMITTER IR 950NM 50MA
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DigiKey	LN66F	Bag				1 - 10 - 100 - 1000 - 10000 -	Buy Now
Panasonic Electronic Components LN660000R EMITTER IR 950NM 100MA T 1 3/4
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DigiKey	LN660000R					1 - 10 - 100 - 1000 - 10000 -	Buy Now
STL STL-N-660 4-PORT PCIE 2.5GB REALTEK ETHERN
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DigiKey	STL-N-660	Box			1	1 $149.99 10 $134 100 $134 1000 $134 10000 $134	Buy Now
Ruland Manufacturing Co Inc IPLN-6-6-1-2X13-F INDEXING PLUNGER WITH LOCK-OUT
Distributors	Part	Package	Stock	Lead Time	Min Order Qty	Price	Buy
DigiKey	IPLN-6-6-1-2X13-F	Bag			1	1 $20.89 10 $20.89 100 $20.89 1000 $20.89 10000 $20.89	Buy Now
Ruland Manufacturing Co Inc IPLN-6-6-M12X1.5-F INDEXING PLUNGER WITH LOCK-OUT
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DigiKey	IPLN-6-6-M12X1.5-F	Bag			1	1 $19.87 10 $19.87 100 $19.87 1000 $19.87 10000 $19.87	Buy Now

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LN66 Datasheets (37)

Part	Manufacturer	Description	Datasheet Type	PDF
LN66	Panasonic	GaAs Infrared Light Emitting Diode	Original	PDF
LN66	Panasonic	GaAs Infrared Light Emitting Diode	Original	PDF
LN66	Unknown	The Optical Devices Data Book (Japanese)	Scan	PDF
LN66	Panasonic	Light Emitting Diodes	Scan	PDF
LN66	Panasonic	Light Emitting Diodes	Scan	PDF
LN66	Panasonic	Light Emitting Diodes	Scan	PDF
LN66	Panasonic	Light Emitting Diodes LED	Scan	PDF
LN660000R	Panasonic	Infrared, UV, Visible Emitters, Optoelectronics, INFRARED LIGHT EMITTING DIODE	Original	PDF
LN66A	Panasonic	GaAs infrared light emitting diode For optical control systems	Original	PDF
LN66A	Panasonic	GaAs Infrared Light Emitting Diode	Original	PDF
LN66A	Unknown	The Optical Devices Data Book (Japanese)	Scan	PDF
LN66A	Panasonic	Light Emitting Diodes	Scan	PDF
LN66A	Panasonic	Light Emitting Diodes LED	Scan	PDF
LN66A	Panasonic	Light Emitting Diodes LED	Scan	PDF

LN66AL	Panasonic	GaAs infrared light emitting diode For optical control systems	Original	PDF
LN66F	Panasonic	GaAs Infrared Light Emitting Diode	Original	PDF
LN66F	Panasonic	GaAs Infrared Light Emitting Diode	Original	PDF
LN66F	Unknown	The Optical Devices Data Book (Japanese)	Scan	PDF
LN66F	Panasonic	Light Emitting Diodes	Scan	PDF
LN66F	Panasonic	Light Emitting Diodes LED	Scan	PDF

LN66 Datasheets Context Search

Catalog Datasheet	MFG & Type	Document Tags	PDF
Untitled Abstract: No abstract text available Text: This product complies with the RoHS Directive EU 2002/95/EC . Infrared Light Emitting Diodes LN66F GaAs Infrared Light Emitting Diode For optical control systems • Features  High-power output, high-efficiency: Ie = 13.0 mW/sr (min.)  Emitted light spectrum suited for silicon photodetectors	Original	2002/95/EC) LN66F	PDF
Untitled Abstract: No abstract text available Text: Infrared Light Emitting Diodes LN66F GaAs Infrared Light Emitting Diode For remote control systems Unit: mm 7.65±0.2 1.0 3.6±0.3 (1.0) 13.5±1.0 • High-power output, high-efficiency: Ie = 13.0 mW/sr (min.) • Emitted light spectrum suited for silicon photodetectors	Original	LN66F	PDF
Untitled Abstract: No abstract text available Text: This product complies with the RoHS Directive EU 2002/95/EC . Infrared Light Emitting Diodes LNA2902L (LN66A(L) GaAs Infrared Light Emitting Diode For optical control systems • Features  High-power output, high-efﬁciency: Ie = 9 mW/sr (min.)  Emitted light spectrum suited for silicon photodetectors	Original	2002/95/EC) LNA2902L LN66A	PDF
LN66L Abstract: No abstract text available Text: Infrared Light Emitting Diodes LN66L GaAs Infrared Light Emitting Diode Unit : mm ø5.0±0.2 1.0 7.65±0.2 Not soldered 2.25 For optical control systems Features High-power output, high-efficiency :PO = 8 mW typ. Good radiant power output linearity with respect to input current	Original	LN66L LN66L	PDF
LN66F Abstract: 1000 nm light emitting diode Text: Infrared Light Emitting Diodes LN66F GaAs Infrared Light Emitting Diode Unit : mm ø5.0±0.2 7.65±0.2 Not soldered Features High-power output, high-efficiency : Ie = 13.0 mW/sr min. 1.0 For light source of remote control systems 13.5±1.0 11.5±1.0 3.6±0.3	Original	LN66F 100Hz LN66F 1000 nm light emitting diode	PDF
LN66 Abstract: No abstract text available Text: Infrared Light Emitting Diodes LN66 GaAs Infrared Light Emitting Diode Unit : mm ø5.0±0.2 7.65±0.2 Not soldered Features High-power output, high-efficiency : PO = 8 mW typ. 1.0 For optical control systems Good radiant power output linearity with respect to input current	Original		PDF
LN66F Abstract: No abstract text available Text: Infrared Light Emitting Diodes LN66F GaAs Infrared Light Emitting Diode Unit : mm ø5.0±0.2 7.65±0.2 Not soldered Features High-power output, high-efficiency : Ie = 13.0 mW/sr min. 1.0 For light source of remote control systems 13.5±1.0 11.5±1.0 3.6±0.3	Original	LN66F LN66F	PDF
LN66 Abstract: No abstract text available Text: Infrared Light Emitting Diodes LN66 GaAs Infrared Light Emitting Diode Unit : mm M Di ain sc te on na tin nc ue e/ d 7.65±0.2 For optical control systems Not soldered ø5.0±0.2 Features ue pl d in an c se ed lud pl vi an m m es si tf ed ain ai fo ol t n l	Original		PDF
LN66A Abstract: LNA2903L Text: This product complies with the RoHS Directive EU 2002/95/EC . Infrared Light Emitting Diodes LNA2903L (LN66A) GaAs Infrared Light Emitting Diode For remote control systems • Features  High-power output, high-efﬁciency: Ie = 9 mW/sr (min.)  Emitted light spectrum suited for silicon photodetectors	Original	2002/95/EC) LNA2903L LN66A) LN66A LNA2903L	PDF
ir 21015 Abstract: Infrared Emitting Diode LN66 Text: Infrared Light Emitting Diodes LN66 NC GaAs Infrared Light Emitting Diode Unit : mm ø5.0±0.2 7.65±0.2 Not soldered Features High-power output, high-efficiency :PO = 8 mW (typ.) 1.0 For optical control systems Good radiant power output linearity with respect to input current	Original		PDF
Untitled Abstract: No abstract text available Text: This product complies with the RoHS Directive EU 2002/95/EC . Infrared Light Emitting Diodes LNA2902L (LN66A(L) GaAs Infrared Light Emitting Diode For optical control systems • Features  Absolute Maximum Ratings Ta = 25°C Parameter di p Pl lan nclu	Original	2002/95/EC) LNA2902L LN66A	PDF
Untitled Abstract: No abstract text available Text: This product complies with the RoHS Directive EU 2002/95/EC . Infrared Light Emitting Diodes LNA2903L (LN66A) GaAs Infrared Light Emitting Diode For remote control systems • Features  Absolute Maximum Ratings Ta = 25°C Parameter di p Pl lan nclu ea	Original	2002/95/EC) LNA2903L LN66A)	PDF
Untitled Abstract: No abstract text available Text: Infrared Light Emitting Diodes LN66 GaAs Infrared Light Emitting Diode Unit : mm 7.65±0.2 For optical control systems Not soldered ø5.0±0.2 M Di ain sc te on na tin nc ue e/ d Features 1.0 High-power output, high-efficiency : PO = 8 mW typ. Absolute Maximum Ratings (Ta = 25˚C)	Original		PDF
Untitled Abstract: No abstract text available Text: Panasonic Infrared Light Emitting Diodes LN66F G aAs Infrared Light Emitting Diode For light source of remote control systems • Features • High-power output, high-efficiency : Ie = 13.0 mW/sr min. • Light emitting spectrum suited for silicon photodetectors	OCR Scan	LN66F	PDF

Untitled Abstract: No abstract text available Text: Panasonic Infrared Light Emitting Diodes LN66 NC G aAs Infrared Light Em itting Diode For optical control systems • Features • • • • • High-power output, high-efficiency :PQ = 8 mW (typ.) Light emitting spectrum suited for silicon photodetectors	OCR Scan	100mA	PDF
8893 single chip tv processor Abstract: transistor tt 2170 em AN7156N an8294nsb Color TV circuit 8893 AN8782SB mn150832 mip160 mn12510 mn662741 Text: Application Block Diagrams • Video Applications VC R System Remote Control Transmission MN171608/9 MN1513 LN66A I Display I Cylinder Motor Drive AN3813/14/15 f FL Dr MN12510 Capstan Motor Drive AN3840N V r I Remote Control Reception}] MN67508/9/6755—7	OCR Scan	MN171608/9 LN66A MN12510 AN3813/14/15 AN3840N PNA4601M MN187* MN6750* AN3126/29 AN5179/82N 8893 single chip tv processor transistor tt 2170 em AN7156N an8294nsb Color TV circuit 8893 AN8782SB mn150832 mip160 mn662741	PDF
LN66F Abstract: No abstract text available Text: Panasonic Infrared Light Emitting Diodes LN66F GaAs Infrared Light Emitting Diode For light source of remote control systems • Features • • • • High-power output, high-efficiency : Ie = 13.0 mW/sr min. Light emitting spectrum suited for silicon photodetectors	OCR Scan	LN66F LN66F	PDF
Untitled Abstract: No abstract text available Text: Panasonic Infrared Light Emitting Diodes LN66 G aAs Infrared Light Emitting Diode For optical control systems • Features • • • • • High-power output, high-efficiency : PQ = 8 mW typ. Light emitting spectrum suited for silicon photodetectors Good radiant power output linearity with respect to input current	OCR Scan	0102Q.	PDF
a950 Abstract: No abstract text available Text: Panasonic Infrared Light Emitting Diodes LN66F G aAs Infrared Light Emitting Diode For light source of remote control systems • Features • • • • High-power output, high-efficiency : Ie = 13.0 mW /sr min. Light emitting spectrum suited for silicon photodetectors	OCR Scan	LN66F 0102Q. a950	PDF
Untitled Abstract: No abstract text available Text: Panasonic Infrared Light Emitting Diodes LN66 L GaAs Infrared Light Emitting Diode For optical control systems • Features • H igh-pow er output, high-efficiency :P0 = 8 mW (typ.) • Light emitting spectrum suited for silicon photodetectors • G ood radiant pow er output linearity with respect to input current	OCR Scan	100mA	PDF
Untitled Abstract: No abstract text available Text: Panasonic Infrared Light Emitting Diodes LN66 L G aAs Infrared Light Em itting Diode Unit : mm 05.O±O.2 For optical control systems • Features • • • • • • High-power output, high-efficiency :PQ = 8 mW (typ.) Light emitting spectrum suited for silicon photodetectors	OCR Scan	100mA	PDF
Untitled Abstract: No abstract text available Text: Panasonic Infrared Light Emitting Diodes LN66 G aAs Infrared Light Emitting Diode For optical control systems • Features • • • • • High-power output, high-efficiency : PQ = 8 mW typ. Light emitting spectrum suited for silicon photodetectors Good radiant power output linearity with respect to input current	OCR Scan		PDF
Infrared Emitting Diode Abstract: LN66 Text: Panasonic Infrared Light Emitting Diodes LN66 L GaAs Infrared Light Emitting Diode For optical control systems • Features • H igh-pow er output, high-efficiency :P0 = 8 mW (typ.) • Light emitting spectrum suited for silicon photodetectors • G ood radiant pow er output linearity with respect to input current	OCR Scan	100mA Infrared Emitting Diode LN66	PDF
VF 100 PANASONIC Abstract: LN66A Text: Panasonic Infrared Light Emitting Diodes LN66A GaAs Infrared Light Emitting Diode For optical control systems • Features • H igh-pow er output, high-efficiency : Ie = 9 m W /sr min. • Light emitting spectrum suited for silicon photodetectors • G ood radiant pow er output linearity with respect to input current	OCR Scan	LN66A VF 100 PANASONIC LN66A	PDF

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STL STL-N-660

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LN66 Datasheets (37)

LN66 Datasheets Context Search

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LN66L

LN66F

LN66

LN66F

LN66

LN66A

ir 21015

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8893 single chip tv processor

LN66F

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a950

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Infrared Emitting Diode

VF 100 PANASONIC