LH53B16R00
Abstract: No abstract text available
Text: LH53B16R00 CMOS 16M 1M x 16/512K × 32 MROM FEATURES PIN CONNECTIONS • 1,048,576 × 16 bit organization (Word mode: W = VIL) 524,288 × 32 bit organization (Double Word mode: W = VIH) • Access time: 120 ns (MAX.) Access time in page mode: 50 ns (MAX.)
|
Original
|
PDF
|
LH53B16R00
16/512K
70-PIN
D31/A-1
70SSOP
70-pin,
500-mil
SSOP70-P-500)
LH53B16R00N
LH53B16R00
|
LH5B
Abstract: 3B16 LH53B16R00N Z3D15 LH5S
Text: SHARP SPEC No. E L 0 7 6 0 S 8 ISSUE: Nov. 10 1995 To ; S P E Product Type C 1 F 1 C A 1 6M bit L 5 H B T 1 O M A SK 7 R N S R O M X X f ilodel No. LH53B16R00N &This specifications contains 14 pages including the cover and appendix. If you have any objections, please contact us before issuing purchasing order.
|
OCR Scan
|
PDF
|
EL0760S8
LH53B16R00N)
SSOP70-P-500
AA1116
3B16R00N
CV727
LH5B
3B16
LH53B16R00N
Z3D15
LH5S
|
536G
Abstract: LH534600
Text: MEMORIES • Mask ROMs Process Capacity * Configuration words X bits Pinout Access time Model No. (ns) MIN. Supply current (mA) MAX. Supply voltage (V) (ns) MAX. User's No. Cycle tima Package 256k 32k X 8 J LH53259D/N/T L H 5359X X 150 25 5 ± 10% 28DIP/28SOP/28TSOP(I)
|
OCR Scan
|
PDF
|
LH53259D/N/T
LH53517D/N/T/TR
LH531VOOD/N/TAJ
LH53V1ROON/T
LH530800AD/AN/AU
LHS30800AD/AN-Y
LH531OOOBD/BN
LH531000BN-S
LH531024D/N/U
LH532100BD
536G
LH534600
|
lh537
Abstract: 42DIP lh533200 LH535g
Text: MEMORIES • Mask ROMs Process CMOS ★ U n d e r development MEMORIES ★ Under developm ent Configuration Process Capacity (wortsxbits Access time (ns) MAX. Model No. Pinout LH-538VXX 100 100 5 ± 10% 32DIP/32SOP/32TSOPÎII) Normal 120 60 5 ± 10% L H 5 3 8 3 0 0 C D /C W C S Æ S H
|
OCR Scan
|
PDF
|
LH-538VXX
LH-5387XX
LH-538NXX
32DIP/32SOP/32TSOP
32DIP/32SOP/
32TSOP
42DIP/44SOP
48TSOP0)
lh537
42DIP
lh533200
LH535g
|
YL 69 moisture
Abstract: YL 38 moisture A18 sot LH53B16R00N D16-D31-pin 70pin ssop LR7L
Text: SHARP E L 0 7 6 0 3 8 Nov. 10 1995 SPEC No. ISSUE: S P Product Type E C I F 1 6M I C A T bit I O N S MASK ROM LH5B7RXX Model No. _ L H 5 9 B 1 6 R 0 Q N &This specifications contains 14 pages including the cover and appendix. If you have any objections, please contact us before issuing purchasing order.
|
OCR Scan
|
PDF
|
EL076038
LH53B16R00N)
AAI11S
YL 69 moisture
YL 38 moisture
A18 sot
LH53B16R00N
D16-D31-pin
70pin ssop
LR7L
|
LQ070T5BG01
Abstract: LM24P20 LM162KS1 BSCR86L00 IR2C07 LM5Q31 IR3Y29B BSCU86L60 lq6bw lq6bw506
Text: INDEX 1 0 4 - 1 0 9 _ DC_ GL1PR112.69 GL3KG63. 66 GL5EG41.66 1 0 4 - n 0 5 O o c .113 DC1B1CP. 100 GL1PR135.69 GL3KG8. 66
|
OCR Scan
|
PDF
|
109-n
GL1PR112.
GL1PR135.
GL1PR136.
GL1PR211.
GL1PR212.
GL3KG63.
GL3P201.
GL3P202.
GL3P305.
LQ070T5BG01
LM24P20
LM162KS1
BSCR86L00
IR2C07
LM5Q31
IR3Y29B
BSCU86L60
lq6bw
lq6bw506
|
sharp mask rom
Abstract: No abstract text available
Text: LH53C16600 16M Mask ROM Ref No.: NP 188C Issue Date: September 1997 High-Speed 16M-bit Mask-Programmable ROM with Page Mode Operation LH53C16600 • ■ Description The LH53C16600D/N User’s No. : LH-5C76XX is a CMOS 16M-bit mask-programmable ROM organized as 2 097 152 X 8
|
OCR Scan
|
PDF
|
LH53C16600
LH53C16600D/N
LH-5C76XX)
16M-bit
42-pin
sharp mask rom
|
nd3060
Abstract: No abstract text available
Text: CMOS 16M 1M x 16/512K x 32 MROM • Access time: 120 ns (MAX.) Access time in page mode: 50 ns (MAX.) • Supply current: -O p e ra tin g : 180 mA (MAX.) - Standby: 300 [iA (MAX.) 70-PIN SSOP TOP VIEW f N Aq IH 1 • 70 n N c A iC 2 69 n N c a2 68 n N c
|
OCR Scan
|
PDF
|
16/512K
70-PIN
D31/A.
70-pin,
500-mil
tLH53B16R00
SSOP70-P-500)
LH53B16R00
nd3060
|
D24844
Abstract: No abstract text available
Text: SHARP 1 SPEC No. E L 0 7 8 0 3 8 I SSUE: Nov. 10 1995 To : S P E C 1 F 1 C A T 1 ON S Product Type 1 6M h it MA S K ROM LH5B7RXX Model Ho. CLH53B16ROON jRThi* spécifications contains 14 pagea including the cover rad appendix. I f you have any objections, please contact us before issuing purchasing order.
|
OCR Scan
|
PDF
|
CLH53B16ROON)
SSOP70-P-500
LH53B16SOOH
CV717
D24844
|
LHMD09
Abstract: No abstract text available
Text: MEMORIES ★ U nderdevelopm ent • Page Mode Specification Mask ROM Specific Pinout • 3 .3 V operation B it C apacity configuration 8M 16M x 8/x 16 x 8/x 16 x 16/x 32 x 8/x 16 32M x 16/x 32 64M x 16/x 32 128M x 16/x 32 Model No. LH53BV8600D/N LH53BV8600T
|
OCR Scan
|
PDF
|
LH-5D86XX
LH-5D80XX
LH-ME78XX
LH-MD79XX
LH-ME58XX
LH-ME53XX
LH-MD50XX
LH-MD57XX
LH-MD09XX
LH-MD19XX
LHMD09
|
Untitled
Abstract: No abstract text available
Text: CMOS 16M 1M x 16/512K x 32 MROM FEATURES • 1,048,576 x 16 bit organization (Word mode: W = V|L) 524,288 x 32 bit organization (Double Word mode: W = Vm) • Access time: 120 ns (MAX.) Access time in page mode: 50 ns (MAX.) • Supply current: - Operating: 180 mA (MAX.)
|
OCR Scan
|
PDF
|
16/512K
70-pin,
500-mil
70-PIN
LH53B16R00
SSOP70-P-500)
LH53B16R00
|
