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    LH532000B Search Results

    LH532000B Datasheets (22)

    Part ECAD Model Manufacturer Description Curated Datasheet Type PDF
    LH532000B Sharp CMOS 2M (256K x 8-128K x 16) MROM Original PDF
    LH532000B-1 Sharp CMOS 2M (256K x 8-128K x 16) MROM Original PDF
    LH532000BD Sharp LH532000BD CMOS 2M (256K x 8) Mask Programmable ROM 40-pin DIP Original PDF
    LH532000BD Sharp CMOS 2M (256K x 8/128K x 16) Mask-Programmable ROM Scan PDF
    LH532000BD-1 Sharp LH532000BD-1 CMOS 2M (256K x 8) Mask Programmable ROM 40-pin DIP Original PDF
    LH532000BD-1 Sharp CMOS 2M (256K x 8/128K x 16) Mask-Programmable ROM Scan PDF
    LH532000BD-S Sharp EPROM Parallel Async Original PDF
    LH532000BN Sharp LH532000BN CMOS 2M (256K x 8) Mask Programmable ROM 40-pin SOP Original PDF
    LH532000BN Sharp CMOS 2M (256K x 8/128K x 16) Mask-Programmable ROM Scan PDF
    LH532000BN-1 Sharp LH532000BN-1 CMOS 2M (256K x 8) Mask Programmable ROM 40-pin SOP Original PDF
    LH532000BN-1 Sharp CMOS 2M (256K x 8/128K x 16) Mask-Programmable ROM Scan PDF
    LH532000BN-S Sharp EPROM Parallel Async Original PDF
    LH532000BT Sharp LH532000BT CMOS 1M (128K x 8) Mask Programmable ROM 48-pin TSOP Original PDF
    LH532000BT Sharp CMOS 2M (256K x 8/128K x 16) Mask-Programmable ROM Scan PDF
    LH532000BT-1 Sharp LH532000BT-1 CMOS 2M (256K x 8) Mask Programmable ROM 48-pin TSOP Original PDF
    LH532000BT-1 Sharp CMOS 2M (256K x 8/128K x 16) Mask-Programmable ROM Scan PDF
    LH532000BTR Sharp LH532000BTR CMOS 2M (256K x 8) Mask Programmable ROM 48-pin TSOP Original PDF
    LH532000BTR Sharp CMOS 2M (256K x 8/128K x 16) Mask-Programmable ROM Scan PDF
    LH532000BTR-1 Sharp LH532000BTR-1 CMOS 2M (256K x 8) Mask Programmable ROM 48-pin TSOP Original PDF
    LH532000BTR-1 Sharp CMOS 2M (256K x 8/128K x 16) Mask-Programmable ROM Scan PDF

    LH532000B Datasheets Context Search

    Catalog Datasheet MFG & Type Document Tags PDF

    48-PIN

    Abstract: LH532000B-1
    Text: LH532000B-1 FEATURES • 262,144 words x 8 bit organization Byte mode 131,072 words × 16 bit organization (Word mode) • Access time: 120 ns (MAX.) • Power consumption: Operating: 275 mW (MAX.) Standby: 550 µW (MAX.) • Mask-programmable control pin


    Original
    LH532000B-1 40-pin DIP/40-pin 40-pin, 600-mil 525-mil 48-pin, LH532000B-1 technol80 48-PIN PDF

    48-PIN

    Abstract: LH532000B
    Text: LH532000B FEATURES • 262,144 words x 8 bit organization Byte mode 131,072 words × 16 bit organization (Word mode) • BYTE input pin selects bit configuration • Access times: 120/150 ns (MAX.) • Low-power consumption: Operating: 275 mW (MAX.) Standby: 550 µW (MAX.)


    Original
    LH532000B 8/128K 40-PIN 48TSOP 48-pin, 40-pin, 600-mil DIP040-P-0600) 48-PIN LH532000B PDF

    48-PIN

    Abstract: LH532000B
    Text: LH532000B CMOS 2M 256K x 8/128K × 16 MROM FEATURES PIN CONNECTIONS • 262,144 words × 8 bit organization (Byte mode) 131,072 words × 16 bit organization (Word mode) • BYTE input pin selects bit configuration • Access times: 120/150 ns (MAX.) • Low-power consumption:


    Original
    LH532000B 8/128K 40-PIN D15/A-9] 48TSOP 48-pin, 40-pin, 600-mil 48-PIN LH532000B PDF

    LH532000B-1

    Abstract: 48-PIN
    Text: LH532000B-1 CMOS 2M 256K x 8/128K × 16 MROM FEATURES PIN CONNECTIONS • 262,144 words × 8 bit organization (Byte mode) 131,072 words × 16 bit organization (Word mode) • Access time: 120 ns (MAX.) • Power consumption: Operating: 275 mW (MAX.) Standby: 550 µW (MAX.)


    Original
    LH532000B-1 8/128K 40-pin DIP/40-pin 40-pin, 600-mil 525-mil 48-pin, LH532000B-1 48-PIN PDF

    48-PIN

    Abstract: DSA0078634 LH532000BD-S
    Text: LH532000B-S FEATURES • 262,144 words x 8 bit organization Byte mode 131,072 words × 16 bit organization (Word mode) • BYTE input pin selects bit configuration • Access times: 500 ns (MAX.) at 2.6 V ≤ VCC < 4.5 V 150 ns (MAX.) at 4.5 V ≤ VCC ≤ 5.5 V


    Original
    LH532000B-S 40-pin, 600-mil 525-mil 48-pin, LH532000B-S 8/128K 40-PIN 48-PIN DSA0078634 LH532000BD-S PDF

    48-PIN

    Abstract: A12C A15C LH532000B-1
    Text: LH532000B-1 FEATURES CMOS 2M 256K x 8/128K x 16 M a sk-P ro g ra m m a b le ROM PIN CONNECTIONS • 262,144 words x 8 bit organization (Byte mode) 131,072 words x 16 bit organization (Word mode) 40-PIN DIP 40-PIN SOP TOP VIEW f . 1• 2 a 7[= O E i/Ô Ë ^D C C


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    LH532000B-1 8/128K 40-pin DIP/40-pin 40-pin, 600-mil 525-mil 48-pin, 12x18 48-PIN A12C A15C LH532000B-1 PDF

    48-PIN

    Abstract: A10C A12C A15C LH532000B
    Text: LH532000B FEATURES CMOS 2M 256K x 8/128K x 16 M ask-Program m able ROM PIN CONNECTIONS • 262,144 words x 8 bit organization (Byte mode) 131,072 words x 16 bit organization (Word mode) 40-PIN DIP 40-PIN SOP TOP VI EW f 1• \ 40 ZI Ag a 7C 2 39 U Ag AgiZ


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    LH532000B 256Kx8/128KX16) 40-pin, 600-mil 525-mil 48-pin, 12x18 48tsop 48-PIN A10C A12C A15C PDF

    LH532

    Abstract: No abstract text available
    Text: PRELIMINARY LH532000B-S FEATURES • Low-power supply: 2.6 to 5.5 V • 262,144 x 8 bit organization Byte mode 131,072 x 16 bit organization (Word mode) • Access time: 500 ns (MAX.) at 2.6 V < Vcc < 4.5 V 150 ns (MAX.) at 4.5 V < V cc < 5.5 V • Static operation


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    LH532000B-S 40-pin, 600-mil 525-mil 44-pin, 48-pin, LH532 PDF

    sharp mask rom 44-pin

    Abstract: No abstract text available
    Text: LH532000B FEATURES • Selectable memory organization: 262,144 x 8 bit byte mode 131,072 x 16 bit (word mode) • BYTE input pin selects bit configuration • Access time: 120/150 ns (MAX.) • CMOS 2M (256K x 8 / 128K x 16) Mask-Programmable ROM DESCRIPTION


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    LH532000B 40-pin, 600-mil 525-mil 48-pin, 44-pin, LH532000B 8/128K sharp mask rom 44-pin PDF

    Untitled

    Abstract: No abstract text available
    Text: LH532000B-S FEATURES • 262,144 words x 8 bit organization Byte mode 131,072 words x 16 bit organization (Word mode) • BYTE input pin selects bit configuration • Access times: 500 ns (MAX.) at 2.6 V < Vcc < 4.5 V 150 ns (MAX.) at 4.5 V < Vcc < 5.5 V


    OCR Scan
    LH532000B-S 40-pin, 600-mil 525-mil 48-pin, LH532000B PDF

    Untitled

    Abstract: No abstract text available
    Text: LH532000B-1 FEATURES • 262,144 words x 8 bit organization Byte mode 131,072 words x 16 bit organization (Word mode) • Access time: 120 ns (MAX.) • Power consumption: Operating: 275 mW (MAX.) Standby: 550 (iW (MAX.) • Mask-programmable control pin


    OCR Scan
    LH532000B-1 40-pin DIP/40-pin 8/128K 40-pin, 525-mil LH532000B PDF

    Untitled

    Abstract: No abstract text available
    Text: LH532000B FEATURES • 262,144 words x 8 bit organization Byte mode 131,072 words x 16 bit organization (Word mode) • BYTE input pin selects bit configuration • Access times: 120/150 ns (MAX.) • Low-power consumption: Operating: 275 mW (MAX.) Standby: 550 |iW (MAX.)


    OCR Scan
    LH532000B 40-pin, 600-mil 525-mil 48-pin, LH532000B 8/128K PDF

    Untitled

    Abstract: No abstract text available
    Text: LH532000B FEATURES • 262,144 words x 8 bit organization Byte mode 131,072 words x 16 bit organization (Word mode) • BYTE input pin selects bit configuration • Access times: 120/150 ns (MAX.) • Low-power consumption: Operating: 275 mW (MAX.) Standby: 550 (iW (MAX.)


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    LH532000B 40-pin, 600-mil 525-mil 48-pin, LH532000B /128K PDF

    ICE ICC3

    Abstract: No abstract text available
    Text: LH532000B FEATURES • Selectable memory organization: 26 2 ,1 4 4 x 8 bit byte mode 131,072 x 16 bit (word mode) • B YTE input pin selects bit configuration • Access time: 1 20/150 ns (M AX.) • Low-power consumption: CMOS 2M (256K x 8 / 128K x 16)


    OCR Scan
    LH532000B 40-pin, 600-m 525-m 48-pin, 44-pin, LH532000B program4-32 ICE ICC3 PDF

    4039A

    Abstract: LH532000BD-S
    Text: LH532000B-S FEATURES • 262,144 words x 8 bit organization Byte mode 131,072 words x 16 bit organization (Word mode) • BYTE input pin selects bit configuration • Access times: 500 ns (MAX.) at 2.6 V < Vcc < 4.5 V 150 ns (MAX.) at 4.5 V < Vcc < 5.5 V


    OCR Scan
    LH532000B-S 40-pin, 600-mil 525-mil 48-pin, LH532000B-S 48TSOP TSOP048-P-1218) 4039A LH532000BD-S PDF

    27E-14

    Abstract: No abstract text available
    Text: LH532000B CMOS 2M 256K x 8/128K x 16 MROM FEATURES PIN CONNECTIONS • 262,144 words x 8 bit organization (Byte mode) 131,072 words x 16 bit organization (Word mode) • BYTE input pin selects bit configuration • Access times: 120/150 ns (MAX.) 40 -P IN D IP


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    LH532000B 40-pin, 600-mil 525-mil 48-pin, 8/128K 532000B 27E-14 PDF

    ATIC35

    Abstract: sharp mask rom 44-pin DFOC
    Text: CMOS 2M 256K x 8 / 128K x 16 Mask Programmable ROM DESCRIPTION FEATURES • Selectable memory organization: 262,144 x 8 bit (byte mode) 131,072 x 16 bit (word mode) The LH532000B is a 2M bit mask programmable ROM with two programmable memory organizations,


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    40-pin, 600-mil 525-mil 44-pin, LH532000B 40-PIN 40-Po 8/128K ATIC35 sharp mask rom 44-pin DFOC PDF

    sharp mask rom 44-pin

    Abstract: No abstract text available
    Text: LH532000B FEATURES • Selectable memory organization: 262,144 x 8 bit byte mode 131,072 x 16 bit (word mode) • BYTE input pin selects bit configuration • Access time: 120/150 ns (MAX.) • Low-power consumption: Operating: 275 mW (MAX.) Standby: 550 jiW (MAX.)


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    LH532000B 40-pin, 600-mil 525-mil 48-pin, 44-pin, LH532000B sharp mask rom 44-pin PDF

    Untitled

    Abstract: No abstract text available
    Text: PRELIMINARY LH532000B-S FEATURES • Low-power supply: 2.6 to 5.5 V CMOS 2M 256K x 8/128K x 16 3 V-Prive Mask-Program m able ROM • Packages: 40-pin, 600-mil DIP 40-pin, 525-mil SOP 44-pin, 1 0 x 1 0 mm2 QFP 44-pin, 14 x 14 mm2 QFP 48-pin, 1 2 x 1 8 mm2 TSOP (Type I)


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    LH532000B-S 8/128K 40-pin, 600-mil 525-mil 44-pin, 48-pin, LH532000B-S PDF

    C2438

    Abstract: No abstract text available
    Text: LH532000B-S CM OS 2M 256K x 8/128K x 16 3 V-Drive Mask-Programmable ROM FEATURES PIN CONNECTIONS • 262,144 words x 8 bit organization (Byte mode) 131,072 words x 16 bit organization (Word mode) 40-PIN DIP 40-PIN SO P TO P VIEW • BYTE input pin selects bit configuration


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    LH532000B-S 40-pin, 600-mil 525-mil 48-pin, LH532000B-S LH532000B C2438 PDF

    6a123

    Abstract: No abstract text available
    Text: LH532000B-1 CMOS 2M 256K x 8/128K x 16 MROM FEATURES PIN CONNECTIONS • 262,144 words x 8 bit organization (Byte mode) 131,072 words x 16 bit organization (Word mode) • Access time: 120 ns (MAX.) • Power consumption: Operating: 275 mW (MAX.) Standby: 550 \i\N (MAX.)


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    LH532000B-1 40-pin DIP/40-pin 40-pin, 600-mil 525-mil 48-pin, LH532000B-1 6a123 PDF

    536G

    Abstract: LH534600
    Text: MEMORIES • Mask ROMs Process Capacity * Configuration words X bits Pinout Access time Model No. (ns) MIN. Supply current (mA) MAX. Supply voltage (V) (ns) MAX. User's No. Cycle tima Package 256k 32k X 8 J LH53259D/N/T L H 5359X X 150 25 5 ± 10% 28DIP/28SOP/28TSOP(I)


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    LH53259D/N/T LH53517D/N/T/TR LH531VOOD/N/TAJ LH53V1ROON/T LH530800AD/AN/AU LHS30800AD/AN-Y LH531OOOBD/BN LH531000BN-S LH531024D/N/U LH532100BD 536G LH534600 PDF

    lh57257

    Abstract: IR2E31 IR2E01 IR2C07 IR2E27 IR2E24 IR2E19 IR2E31A IR3n06 IR2E02
    Text: Index Model No. ARM7D CPU Core Bi-CMOS 1 27 40,42 _ _ CMOS CMOS CMOS CMOS CMOS 4A 5A 8 A AH D ID1 Series ID2 Series 40,42 40.42 40,42 40,42 40 B ü.’1*"! 14,15 14 m IR2339 IR2403 IR2406 IR2406G IR2410 IR2411 IR2415 IR2419 IR2420 IR2422 IR2425 IR2429


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    IR2E201 IR2E24 IR2E27/A IR2E28 IR2E29 IR2E30 IR2E31/A IR2E32N9 IR2E34 IR2E41 lh57257 IR2E31 IR2E01 IR2C07 IR2E27 IR2E19 IR2E31A IR3n06 IR2E02 PDF

    LH231G

    Abstract: lh5348 LH538b LH2326 lh5s4 LHMN5 lh5359 lh5348xx lh537 LH235
    Text: MEMORIES ★Under development • M ask ROMs SlpÉHRfi Bonflgmllan jvorai x d m i NMOS <"^g|g|ï|ïi£- User1* No. sssysr Sllpjiijp 1 currant mA MAX. ■ Paefcagfe ft- • 64k 8k x 8 LH2389D LH2369XX 200 60 5 ± 10% 28DIP 128k 16k x 8 LH23128D LH2326XX 200


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    28DIP 28DIP LH2389D LH23128D LH23286D LH236120 LH2310006D LH231G lh5348 LH538b LH2326 lh5s4 LHMN5 lh5359 lh5348xx lh537 LH235 PDF