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    LH5268A Search Results

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    LH5268A Price and Stock

    Sharp Microelectronics of the Americas LH5268AN-10LL

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    Bristol Electronics LH5268AN-10LL 166
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    Quest Components LH5268AN-10LL 130
    • 1 $5.43
    • 10 $2.715
    • 100 $2.534
    • 1000 $2.534
    • 10000 $2.534
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    LH5268AN-10LL 99
    • 1 $5.43
    • 10 $5.43
    • 100 $3.3485
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    Component Electronics, Inc LH5268AN-10LL 15
    • 1 $2.31
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    • 100 $1.73
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    Sharp Microelectronics of the Americas LH5268AD-10LL

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    Bristol Electronics LH5268AD-10LL 27
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    Quest Components LH5268AD-10LL 9,467
    • 1 $3.6
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    • 1000 $3.6
    • 10000 $1.26
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    LH5268AD-10LL 21
    • 1 $3.6
    • 10 $2.4
    • 100 $1.8
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    LH5268AD-10LL 8
    • 1 $7.5
    • 10 $5.5
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    SHA LH5268AN10LL

    Electronic Component
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    ComSIT USA LH5268AN10LL 387
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    XLIN LH5268AN10YLL

    Electronic Component
    Distributors Part Package Stock Lead Time Min Order Qty Price Buy
    ComSIT USA LH5268AN10YLL 6
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    LH5268A Datasheets (10)

    Part ECAD Model Manufacturer Description Curated Datasheet Type PDF
    LH5268A Sharp CMOS 64K (8K x 8) Static RAM Original PDF
    LH5268A-10LL Sharp CMOS 32K x 8 static RAM Original PDF
    LH5268A-10LL Unknown Static RAM, Dynamic RAM, Video RAM - Short Form Datasheets Scan PDF
    LH5268A-10LL Sharp CMOS 64K (8K x 8) Static RAM Scan PDF
    LH5268A-70LL Unknown Static RAM, Dynamic RAM, Video RAM - Short Form Datasheets Scan PDF
    LH5268AD-10LL Sharp CMOS 32K x 8 static RAM Original PDF
    LH5268AD-10LL Sharp CMOS 64K (8K x 8) Static RAM Scan PDF
    LH5268AN Sharp SRAM Scan PDF
    LH5268AN-10LL Sharp CMOS 32K x 8 static RAM Original PDF
    LH5268AN-10LL Sharp CMOS 64K (8K x 8) Static RAM Scan PDF

    LH5268A Datasheets Context Search

    Catalog Datasheet MFG & Type Document Tags PDF

    LH5268A

    Abstract: 5268A
    Text: LH5268A CMOS 64K 8K x 8 Static RAM FEATURES DESCRIPTION • 8,192 × 8 bit organization The LH5268A is a static RAM organized as 8,192 × 8 bits. It is fabricated using silicon-gate CMOS process technology. • Access time: 100 ns (MAX.) • Power consumption:


    Original     		LH5268A LH5268A 28-PIN 28SOP 28-pin, 450-mil 600-mil 5268A PDF

    LH5268AD-10LL

    Abstract: LH5268A
    Text: LH5268A CMOS 64K 8K x 8 Static RAM FEATURES DESCRIPTION • 8,192 × 8 bit organization The LH5268A is a static RAM organized as 8,192 × 8 bits. It is fabricated using silicon-gate CMOS process technology. • Access time: 100 ns (MAX.) • Power consumption:


    Original     		LH5268A LH5268A 28-PIN 28SOP 28-pin, 450-mil 600-mil LH5268AD-10LL PDF

    LH5268AD-10LL

    Abstract: LH5268A
    Text: LH5268A C M O S 6 4 K 8 K x 8 S tatic RAM FEATURES DESCRIPTION • 8,192 x 8 bit organization The LH5268A is a static RAM organized as 8,192 x 8 bits. It is fabricated using silicon-gate CMOS process technology. • Access time: 100 ns (MAX.) • Power consumption:


    OCR Scan     		LH5268A 28-pin, 600-mil 300-mil 450-mil LH5268A 28-pin LH5268AD-10LL PDF

    ice power 200 asc

    Abstract: No abstract text available
    Text: LH5268A CMOS 64K 8K x 8 Static Ram FEATURES DESCRIPTION • 8,192 The LH5268A is a static RAM organized as 8,192 x 8 bits. It is fabricated using silicon-gate CMOS proc­ ess technology. x 8 bit organization • Access times: 100 ns (MAX.) • Power consumption:


    OCR Scan     		LH5268A LH5268A 28-pin, 600-mil 300-mil 450-mil 28-PIN ice power 200 asc PDF

    128X512

    Abstract: No abstract text available
    Text: LH5268A C M O S 6 4 K 8 K x 8 S tatic RAM FEATURES DESCRIPTION • 8,192 x 8 bit organization The LH5268A is a static RAM organized as 8,192 x 8 bits. It is fabricated using silicon-gate CMOS process technology. • Access time: 100 ns (MAX.) • Power consumption:


    OCR Scan     		LH5268A 28-pin, 600-mil 300-mil 450-mil 28-pin 128X512 PDF

    Untitled

    Abstract: No abstract text available
    Text: LH5268A CMOS 64K 8K x 8 Static RAM FEATURES DESCRIPTION • 8,192 x 8 bit organization The LH5268A is a static RAM organized as 8,192 x 8 bits. It is fabricated using silicon-gate CMOS process technology. • Access time: 100 ns (MAX.) • Power consumption:


    OCR Scan     		LH5268A 28-pin, 600-mil 300-mil 450-mil LH5268A 28-PIN PDF

    Untitled

    Abstract: No abstract text available
    Text: LH5268A FEATURES 3.0 |liW Vcc = 3 V, TA = 25°C • • • • • Fully-static operation Three-state outputs Single +5 V power supply TTL compatible I/O Packages: 28-pin, 600-mil DIP 28-pin, 300-mil SK-DIP 28-pin, 450-mil SOP DESCRIPTION The LH5268A is a static RAM organized as 8,192 x 8


    OCR Scan     		LH5268A LH5268A 28-PIN 28-pin, 600-mil 300-mil PDF

    Untitled

    Abstract: No abstract text available
    Text: LH5268A CMOS 64K 8K x 8 Static RAM FEATURES DESCRIPTION • 8,192 x 8 bit organization The LH5268Ais a static RAM organized as 8,192 x 8 bits. It is fabricated using silicon-gate CMOS process technology. • Access time: 100 ns (MAX.) • Power consumption:


    OCR Scan     		LH5268A 28-pin, 600-mil 300-mil 450-mil LH5268Ais 28-PIN PDF

    LH5268A

    Abstract: LH5268AD-10LL
    Text: LH5268A CMOS 64K 8K x 8 Static RAM FEATURES DESCRIPTION • 8,192 x 8 bit organization The LH5268A is a static RAM organized as 8,192 x 8 bits. It is fabricated using silicon-gate CM OS process technology. • Access time: 100 ns (MAX.) • Power consumption:


    OCR Scan     		LH5268A 28-pin, 600-mil 300-mil 450-mil LH5268A 28-pin LH5268AD-10LL PDF

    Untitled

    Abstract: No abstract text available
    Text: CMOS 64K 8K FEATURES • 8,192 x 8 bit organization • Access tim es: 70*/100 ns (MAX. • Power consum ption: Operating: 255 mW (MAX.) @ 70 ns 220 mW (MAX.) @ 100 ns 8) Static Ram x DESCRIPTION The LH5268ALL is a static RAM organized as 8,192 8 bits. It is fabricated using silicon-gate CM OS proc­


    OCR Scan     		LH5268ALL 28-pin, 600-mil 300-mil 450-mil 28-PIN PDF

    Untitled

    Abstract: No abstract text available
    Text: LH5268A CMOS 64K 8K x 8 Static RAM FEATURES DESCRIPTION • 8,192 x 8 bit organization The LH5268A is a static RAM organized as 8,192 x 8 bits. It is fabricated using silicon-gate CMOS process technology. • Access time: 100 ns (MAX.) • Power consumption:


    OCR Scan     		LH5268A LH5268A 28-PIN 28-pin, 600-m5 450-mii 600-mil PDF

    MB81C78A-35

    Abstract: LH5164-10 MB81C78A MB81C78-45 LH5268A-10LL LH5164L-15 LC3664BL-10 LH5164D LH5164D/N-10L LC3664BL-12
    Text: CMOS 6 4 K m £ tt £ ¡á£ÍEH OC X TAAC •ax ns) TCAC (ns) ■f y ? S t a t i c RAM ( 81 9 2 x 8 ) ft ft TOE ■ax (ns) TOH min (ns) TOD max (ns) TWP min (ns.) TDS IE (ns) TDH min (ns) TWD min (ns) TWR max (ns) V I or V C C (V) 2 8 P I N IDO max (mA)


    OCR Scan     		28PIN LC3664R/RL-10 LC3664RM/RML-10 64RS/RSL-10 LC36640-70 M5M5165P-70L M5M5178P-35 M5M5178P-45 M5M5178P-55 MB81C78-45 MB81C78A-35 LH5164-10 MB81C78A LH5268A-10LL LH5164L-15 LC3664BL-10 LH5164D LH5164D/N-10L LC3664BL-12 PDF

    lh57257

    Abstract: IR2E31 IR2E01 IR2C07 IR2E27 IR2E24 IR2E19 IR2E31A IR3n06 IR2E02
    Text: Index Model No. ARM7D CPU Core Bi-CMOS 1 27 40,42 _ _ CMOS CMOS CMOS CMOS CMOS 4A 5A 8 A AH D ID1 Series ID2 Series 40,42 40.42 40,42 40,42 40 B ü.’1*"! 14,15 14 m IR2339 IR2403 IR2406 IR2406G IR2410 IR2411 IR2415 IR2419 IR2420 IR2422 IR2425 IR2429


    OCR Scan     		IR2E201 IR2E24 IR2E27/A IR2E28 IR2E29 IR2E30 IR2E31/A IR2E32N9 IR2E34 IR2E41 lh57257 IR2E31 IR2E01 IR2C07 IR2E27 IR2E19 IR2E31A IR3n06 IR2E02 PDF

    Untitled

    Abstract: No abstract text available
    Text: MEMORIES * S tic RAMs Process C apacity Configuration Model No. A ccess tim e ns 70 80 90 100 120 LH5116 16k Full CMOS 64k 2k X 8 8k X 8 LH5116H f- Supply voltage : 5 V * 10% QpewBng tew ^raw » : ~ 40to85'C LH5116S j- Supply voltage : 3 V ± 10% LH5164A


    OCR Scan     		LH5116 LH5116H LH5116S LH5164A LH5164AH 40to85 LH5164AV LH51V256H LH5268A LH52256A PDF

    LQ070T5BG01

    Abstract: LM24P20 LM162KS1 BSCR86L00 IR2C07 LM5Q31 IR3Y29B BSCU86L60 lq6bw lq6bw506
    Text: INDEX 1 0 4 - 1 0 9 _ DC_ GL1PR112.69 GL3KG63. 66 GL5EG41.66 1 0 4 - n 0 5 O o c .113 DC1B1CP. 100 GL1PR135.69 GL3KG8. 66


    OCR Scan     		109-n GL1PR112. GL1PR135. GL1PR136. GL1PR211. GL1PR212. GL3KG63. GL3P201. GL3P202. GL3P305. LQ070T5BG01 LM24P20 LM162KS1 BSCR86L00 IR2C07 LM5Q31 IR3Y29B BSCU86L60 lq6bw lq6bw506 PDF

    IR3Y29B

    Abstract: ir3y26a1 IR4N IR3T24N IR3C08N ir2c53 ir2c05 li3301 IR3Y08 IR2E02
    Text: Index Model No. IR3T ARM710 ARM7DI ARM7DM ARM7TDMI ARM7TDMI-SPL ARM8 ARM810 CMOS CMOS CMOS CMOS F series G series J series K series ID22 series ID222XX ID223XX ID224XX ID226XX ID227XX ID229XX ID22DXX ID22FXX ID22HXX ID240 series ID240DXX ID240EXX ID240GXX


    OCR Scan     		ARM710 ARM810 IR3T24 IR3T24N IR3Y05Y IR3Y08 IR3Y12B IR3Y18A IR3Y21 IR3Y26A IR3Y29B ir3y26a1 IR4N IR3T24N IR3C08N ir2c53 ir2c05 li3301 IR2E02 PDF

    Untitled

    Abstract: No abstract text available
    Text: MEMORIES Low voltage operation Bit Capacity configuration 16 k 64k x8 x8 ★ Access time Supply current ns MAX. Cycle time Operating Standby (ns) MIN. (mA) MAX. (mA) MAX. Model No. LH5116SN x8 x8 1M x 16 2M x 16 *1 *5 *7 Supply Operating voltage temp. (V)


    OCR Scan     		24SOP LH5116SN LH5164AVN/AVT LH5164AV3HN LH5164AVHN/AVHT LH5164AST LH5164ASHN/ASHT LH51V256N/T-85SL LH51V256HN/HT-85SL LH52CV256N/T-10LL PDF

    LH521007AK-20

    Abstract: No abstract text available
    Text: STATIC RAM ☆ New product ★ Under development STATIC RAMs ♦ Features • The product lineup includes a wide variety of bit configurations x4, x8, x l6 , x l8 , x32 . • High-speed synchronous devices for the secondary cache memory are available for use with low-voltage, lowpower CPUs idpal for portable equipment.


    OCR Scan     		LH5116SN LH5164AVN/AVT LH5164AV3HN 24SOP 28S0P/28TS0P LH5268A/AN/AD-1 52256C -70LIÆ 710LL LH521007AK-20 PDF

    LHS168

    Abstract: LH52252A LH52252
    Text: V .J 1 íVt! Static RAMs ★Under development Process Capacity Model No. Configuration Access time ns 70 -I 16k 2k Package 90 100 120 LH5116 J— I. 24 24 24 LH5116H 3 -T 24 24 24 - Z ÏÏ-J 1 24 24 24 C E , C S c o n tro l Data retention current : 0.2 pAjMAXj j


    OCR Scan     		LH5116 LH5116H LH5116S LH5117 LH511 LH5118 LH5118H LH52252A LH52253 LH521002A LHS168 LH52252 PDF

    IR2E27A

    Abstract: IR2C53 IR2E02 IR2E27 IR2E10 IR3N34 IR2E31A IR2E01 IR2C07 ir2e31
    Text: lndeX Model No. ARM7D CPU Core28,32,33 ARM7DM 28,33 CMOS CMOS CMOS CMOS 76 5A A F G 44 44 44 44 ID1 series ID2 series ID3 seríes ID21K064 ID21K128 ID21K256 ID21K512 ID21M010 ID21M015 ID21M020 ID21M040 ID22K256 ID22K512 ID22M010 ID22M020 ID22M040 ID22M080


    OCR Scan     		Core28 IR2C24A/AN IR2C26 IR2C30/N IR2C32 IR2C33 IR2C34 IR2C36 IR2C38/N IR2C43 IR2E27A IR2C53 IR2E02 IR2E27 IR2E10 IR3N34 IR2E31A IR2E01 IR2C07 ir2e31 PDF

    operating

    Abstract: LH52E1000
    Text: MEMORIES Static RAMs W ★ Under development Low voltage operation Capacity confjguratj0n 16k x8 64k Model No. Access time ns 8 5 2 0 0 2 5 0 5 00 10 0 0 x8 LH5116S Supply voltage : 3 V ± 10% Operating temperature : 0 to 50*C LH5164AV Supply voltage : 2.7 to 5.5 V


    OCR Scan     		LH5116S LH5164AV LH5164AV3H LH5164AVH LH5164AS LH5164ASH LH51V256 LH51V256H LH52E1000 LH51V1016CJ operating LH52E1000 PDF

    100 10L AD

    Abstract: LH521007AK-25 LH5168ST LH5168SHN lh5168 LH521002AK20
    Text: MEMORIES • S ta tic R A M s Process Capacity ★ U nderdevelopm ent Configuration words Xbits Model No. Access tim e Supply current (ns) MAX. Cycle time operating/standby ImA) MAX. (ns) MIN. Supply voltage (V) Operating temperature (1C) Package LH5116/NA/D-10


    OCR Scan     		LH5116/NA/D-10 100LQFP H/AHN/AHD/AHT-10L LH5164AVN/AVT LH5164AVHN/AVHT LH5164ASHN/ASHT LH51256/N-10L LH51V1032C4M-15 LH51V1032C4M-17 LH5268A/AN/AD-1 100 10L AD LH521007AK-25 LH5168ST LH5168SHN lh5168 LH521002AK20 PDF