Untitled
Abstract: No abstract text available
Text: CAT24FC65, CAT24FC66 64K-Bit I2C Serial CMOS EEPROM with Partial Array Write Protection FEATURES • Fast mode I2C bus compatible* ■ 5 ms max write cycle time ■ Max clock frequency: ■ Write protect feature - 400KHz for VCC=2.5V to 5.5V ■ Schmitt trigger filtered inputs for
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CAT24FC65,
CAT24FC66
64K-Bit
400KHz
64-byte
CAT24FC65)
CAT24FC66)
CAT24FC65/66
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24FC64
Abstract: CAT24FC64
Text: H EE GEN FR ALO CAT24FC64 64K-Bit I2C Serial CMOS EEPROM LE FEATURES A D F R E ETM • Industrial and extended ■ Fast mode I2C bus compatible* temperature ranges ■ Max clock frequency: ■ 5 ms max write cycle time - 400KHz for VCC=1.8V to 5.5V - 1MHz for VCC=2.5V to 5.5V
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CAT24FC64
64K-Bit
400KHz
64-byte
CAT24FC64
24FC64
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3502M
Abstract: 3tb52 M188A m184a
Text: FJUL63182A-02 ＭＳＭ６３１８２Ａ／１８４Ａ／１８８Ａ ユーザーズマニュアル 第 2 版 2001 年 12 月 10 日 4 FJUL63182A-02 ご 注 意 １． 本書に記載された内容は製品改善および技術改良等により将来予告なしに変更することがありま
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FJUL63182A-02
M182A
cadr14MSM63188A
M184A
M188A
3502M
3tb52
M188A
m184a
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HY6264A
Abstract: HY6264A-I HY6264ALP-70 HY6264ALP HY6264AJ HY6264ALLP HY6264AP Hyundai Semiconductor HY6264A HY6264AL
Text: HY6264A- I Series 8Kx8bit CMOS SRAM FEATURES DESCRIPTION The HY6264A/ HY6264A-I is a high-speed, low power and 8,192x8-bits CMOS static RAM fabricated using Hyundai's high performance twin tub CMOS process technology. This high reliability process coupled with innovative circuit
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HY6264A-
HY6264A/
HY6264A-I
192x8-bits
HY6264A/HY6264A-I
28pin
330mil
HY6264A
HY6264ALP-70
HY6264ALP
HY6264AJ
HY6264ALLP
HY6264AP
Hyundai Semiconductor HY6264A
HY6264AL
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MLP8 2x3mm
Abstract: MLP8 m25p64 MARKING code mf stmicroelectronics AN2043 SO8 NARROW Part Marking STMicroelectronics flash memory EEPROM 16Mb M25P stmicroelectronics eeprom M25P16
Text: Serial EEPROM, serial Flash and application specific serial non-volatile memories Selection guide February 2005 Information furnished is believed to be accurate and reliable. However, STMicroelectronics assumes no responsibility for the consequences of use of such information nor for any infringement of patents or other rights of third parties
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SGEEFLASH/1204
MLP8 2x3mm
MLP8 m25p64
MARKING code mf stmicroelectronics
AN2043
SO8 NARROW
Part Marking STMicroelectronics flash memory
EEPROM 16Mb
M25P
stmicroelectronics eeprom
M25P16
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24fc64ji-te13
Abstract: 24FC64 AEC-Q100 CAT24FC64
Text: H EE GEN FR ALO CAT24FC64 64K-Bit I2C Serial CMOS EEPROM LE FEATURES A D F R E ETM • Industrial and extended ■ Fast mode I2C bus compatible* temperature ranges ■ Max clock frequency: ■ 5 ms max write cycle time - 400KHz for VCC=2.5V to 5.5V ■ Write protect feature
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CAT24FC64
64K-Bit
400KHz
64-byte
CAT24FC64
24fc64ji-te13
24FC64
AEC-Q100
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Untitled
Abstract: No abstract text available
Text: H EE GEN FR ALO CAT24FC64 64K-Bit I2C Serial CMOS EEPROM LE FEATURES A D F R E ETM • Industrial and extended ■ Fast mode I2C bus compatible* temperature ranges ■ Max clock frequency: ■ 5 ms max write cycle time - 400KHz for VCC=1.8V to 5.5V - 1MHz for VCC=2.5V to 5.5V
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CAT24FC64
64K-Bit
400KHz
64-byte
CAT24FC64
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t3d6
Abstract: E10HZ t3d4 LCD 16*1 T3D7 T3D5 m193 FJUL63193-02 T13CK DL T2d6
Text: お客様各位 資料中の「沖電気」「ＯＫＩ」等名称の OKI セミコンダクタ株式会社への変更について 2008 年 10 月 1 日を以って沖電気工業株式会社の半導体事業は OKI セミコン ダクタ株式会社に承継されました。 従いまして、本資料中には「沖電気工業株
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FJUL63193-02
ML63187
ML63189B
M189B
ML63193
t3d6
E10HZ
t3d4
LCD 16*1
T3D7
T3D5
m193
FJUL63193-02
T13CK DL
T2d6
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T2d6
Abstract: T2D7 ML63611A SASM63K FJUL63611A-01 XXHX ML63611 code l43
Text: お客様各位 資料中の「沖電気」「ＯＫＩ」等名称の OKI セミコンダクタ株式会社への変更について 2008 年 10 月 1 日を以って沖電気工業株式会社の半導体事業は OKI セミコン ダクタ株式会社に承継されました。 従いまして、本資料中には「沖電気工業株
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FJUL63611A-01
ML63611A
nX-4/250
nX-4/250300
nX-4/300
T2d6
T2D7
ML63611A
SASM63K
FJUL63611A-01
XXHX
ML63611
code l43
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LCD 1620
Abstract: 3tb52 lcd 1621
Text: PJUL63611-03 CMOS 4 ビット マイクロコントローラ ＭＬ６３６１１ ユーザーズマニュアル 暫定 第 3 版 2001 年 7 月 23 日 4 PJUL63611-03 ご 注 意
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PJUL63611-03
ML63611
PJUL63611-01
PJUL63611-02
PJUL63611-03
LCD 1620
3tb52
lcd 1621
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3tb52
Abstract: 64Hz-1 t3d7 LCD96 t2d7 2754 mov
Text: FJUL63295A-02 CMOS 4 ビット マイクロコントローラ ＭＬ６３２９５Ａ ユーザーズマニュアル 第2版 4 2001 年 7 月 23 日 FJUL63295A-02 ご 注 意 １． 本書に記載された内容は製品改善および技術改良等により将来予告なしに変更することがありま
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FJUL63295A-02
ML63295A
0001H
3tb52
64Hz-1
t3d7
LCD96
t2d7
2754 mov
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24FC64
Abstract: AEC-Q100 CAT24FC64 K0803
Text: CAT24FC64 64K-Bit I2C Serial CMOS EEPROM FEATURES • Industrial and extended ■ Fast mode I2C bus compatible* temperature ranges ■ Max clock frequency: ■ 5 ms max write cycle time - 400KHz for VCC=2.5V to 5.5V t r ■ Write protect feature ■ Schmitt trigger filtered inputs for noise suppression
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CAT24FC64
64K-Bit
400KHz
64-byte
CAT24FC64
24FC64
AEC-Q100
K0803
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Untitled
Abstract: No abstract text available
Text: HY6264A Series •HYUNDAI 8Kx 8-bit CMOS SRAM DESCRIPTION The HY6264A is a high-speed, low power and 8,192 x 8-bits CM O S static RAM fabricated using Hyundai’s high performance twin tub CM O S process technology. This high reliability process coupled with innovative circuit
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HY6264A
speed-70/85/100/120ns
1DB01-11-MAY94
HY6264AP
HY6264ALP
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1SBL
Abstract: AKM6287LP55
Text: A K M 6287 Series 65536-word x 1-bit High Speed CMOS Static RAM • FEATURES • High Speed: Fast Access Time 45/55/70ns max. • • Single 5V Supply and High Density 22 Pin Package Low Power Standby and Low Power Operation • Standby: 100/LtW (typ.)/10/LtW (typ.) (L-version)
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65536-word
45/55/70ns
100/LtW
/10/LtW
300mW
DP-22N)
AKM6287P-45
AKM6287P-55
AKM6287P-70
AKM6287LP-45
1SBL
AKM6287LP55
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D41416
Abstract: PD41416 PD41416-15 HPD41416-12 PD41416-12
Text: SEC jJ>D41416 1 6 ,3 8 4 X 4-BIT DYNAMIC NMOS RAM NEC Electronics Inc. Revision 2 Description Pin Configuration The /j PD41416 is a 16,384-word by 4-bit dynamic Nchannel MOS RAM designed to operate from a single +5 V power supply. The negative voltage substrate bias
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D41416
uPD41416
384-word
nPD41416
jPD41416
3-001783A
3-001784A
83-001785B
PD41416
PD41416-15
HPD41416-12
PD41416-12
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LH5268AD-10LL
Abstract: LH5268A
Text: LH5268A C M O S 6 4 K 8 K x 8 S tatic RAM FEATURES DESCRIPTION • 8,192 x 8 bit organization The LH5268A is a static RAM organized as 8,192 x 8 bits. It is fabricated using silicon-gate CMOS process technology. • Access time: 100 ns (MAX.) • Power consumption:
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LH5268A
28-pin,
600-mil
300-mil
450-mil
LH5268A
28-pin
LH5268AD-10LL
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Untitled
Abstract: No abstract text available
Text: HM6289 Series 16384-Word x 4-Bit High Speed CMOS Static RAM with OE Th e Hitachi H M 6 2 8 9 is a high speed 64k static R A M organized Pin Arrangement as 16-kword x 4-bit. It realizes high speed access tim e (2 5 /3 5 /4 5 ns) and low power consumption, employing C M O S process techno logy.
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HM6289
16384-Word
16-kword
32-bit
300-m
HM6288
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6287HLJP-25
Abstract: 6287HP
Text: HM6287H Series 65536-Word x 1-Blt High Speed CMOS Static RAM The Hitachi HM6287H is a high speed 64K static RAM organized as 64-kword x 1-bit. It realizes high speed access time 25/35 ns and HM 6287HP Series low power consumption, employing CMOS process technology and
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HM6287H
65536-Word
64-kword
32-bit
300-m
DP-22NB)
6287HP
22-pin
6287HLJP-25
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48C1024
Abstract: No abstract text available
Text: M 4 8 C 5 1 2 / 4 8 C 1 0 2 4 5 1 2 K / 1 0 2 4 K F L A S H " E E P R O M ADVANCE DATA SH EET duty 1987 Features • 64K/128K Byte Writable non-volatile memory ■ Low Power CMOS Process ■ Electrical Chip and Block Erase • 7.5 Second Maximum Erase Time
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64K/128K
M48CS12/48C
48C512/1024
512/48C
48C1024
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SRM2261
Abstract: SRM2261C55 SRM2261C70 AL221 2551 vn 001542
Text: OB PF211-52 kT W ^ S Si A M. A i SYSTEMS HIGH SPEED 64K BIT CMOS STATIC RAM SRM2261C55 ' SRM2261C7o SRM2261 r ; 'S - ; 7v I DESCRIPTION T h e S R M 2 2 6 IC 55/70 is a 6 5 ,5 3 6 words * 1 bit asynchronous, static, random a c cess memory or a monolithic C M O S chip. Its very low standby power requirem ent m akes it ideal for applications requiring non-volatile
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PF211-52
SRM2261Cs5
SRM2261C7O
SRM2261
SRM226IC55/70
SRM2261C55
SRM2261C/0
C22-9
22-pin
OcVl985,
SRM2261
SRM2261C70
AL221
2551 vn
001542
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Untitled
Abstract: No abstract text available
Text: HM6787 Series Maintenance Only Refer to HM6787HA Series 66536-word x 1-bit High Speed Hi-BiCMOS Static RAM • FEATURES HM 6787P Series • • Super Fast Access Time: 25ns/30ns max. Low Power Dissipation (DC): Operating 180mW (typ) • • • High Driving Capability: lo c 16mA
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HM6787
66536-word
25ns/30ns
180mW
22-pin
HM6787HA
6787P
DP-22NB)
6787P-25
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HM6287HLP-35
Abstract: HM6287-70 HM6287 HM6287LP-45 HM6287LP-55 A6C5 HM6287H HM6287HP-25 HM6287HP-35 HM6287HLJP-25
Text: HM6287, HM6287H Series 65536-word x 1-bit High Speed CMOS Static RAM The Hitachi HM6287H is a high speed 64 k static RAM organized as 64-kword x 1-bit. It realizes high speed access time 25/35 ns and low power co n su m p tio n , em p lo y in g CM OS p ro cess
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HM6287,
HM6287H
65536-word
64-kword
32-bit
300-mil
22-pin
24-pin
HM6287HLP-35
HM6287-70
HM6287
HM6287LP-45
HM6287LP-55
A6C5
HM6287HP-25
HM6287HP-35
HM6287HLJP-25
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6789JP-30
Abstract: 57AH
Text: Maintenance Only HM6789 Series 16384-word x 4-bit High Speed Hi-BiCMOS Static RAM with OE Features • H M 6789P Series S u p e r F a s t A c c e s s T i m e : . 2 5 / 3 0 ns (m a x) • L o w R o w e r D is s ip a t io n ( D C ) O p e r a t in g . .
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HM6789
16384-word
6789P
HM6789P-25
6789P-30
6789JP-25
6789JP-30
DP-24NC)
6789JP
57AH
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Untitled
Abstract: No abstract text available
Text: H M 6 7 8 7 S e rle s Maintenance Only 65536-word x 1-bit High Speed Hi-BiCMOS Static RAM HM6787P Series FEATURES Super Fast Access Time: 25ns/30ns max. Low Power Dissipation (DC): Operating 180mW (typ) High Driving Capability: l0 L.16nnA +5V Single Supply
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65536-word
25ns/30ns
180mW
16nnA
22-pin
HM6787P
DP-22NB)
HM6787P-25
HM6787P-30
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