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    LH5164ASH Datasheets (5)

    Part ECAD Model Manufacturer Description Curated Datasheet Type PDF
    LH5164ASH Sharp CMOS 64K (8K x 8) Static RAM Original PDF
    LH5164ASHN Sharp CMOS 64K (8K x 8)static RAM Original PDF
    LH5164ASHN Sharp 8192 x 8 Static RAM Scan PDF
    LH5164ASHT Sharp CMOS 64K (8K x 8)static RAM Original PDF
    LH5164ASHT Sharp RAM organized as 8,192 x 8 bit Scan PDF

    LH5164ASH Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    LH5164ASH

    Abstract: No abstract text available
    Text: PRELIMINARY LH5164ASH FEATURES CMOS 64K 8K x 8 Static RAM PIN CONNECTIONS • 8,192 × 8 bit organization • Access time: 500 ns (MAX.) TOP VIEW 28-PIN SOP • Power consumption: Operating: 60 mW (MAX.) @ 3 V Standby: 3 µW (MAX.) @ 70°C @ 3 V 9 µW (MAX.) @ 85°C @ 3 V


    Original
    PDF LH5164ASH 28-PIN LH5164ASH 28TSOP 28-pin, 450-mil OP028-P-0450)

    LH5164ASHN

    Abstract: LH5164ASH
    Text: LH5164ASH FEATURES CMOS 64K 8K x 8 Static RAM PIN CONNECTIONS • 8,192 × 8 bit organization • Access time: 500 ns (MAX.) TOP VIEW 28-PIN SOP • Power consumption: Operating: 60 mW (MAX.) @ 3 V Standby: 3 µW (MAX.) @ 70°C @ 3 V 9 µW (MAX.) @ 85°C @ 3 V


    Original
    PDF LH5164ASH 28-PIN LH5164ASH 28TSOP 28-pin, 450-mil OP028-P-0450) LH5164ASHN

    Untitled

    Abstract: No abstract text available
    Text: PRELIMINARY LH5164ASH FEATURES CMOS 64K 8K x 8 Static RAM PIN CONNECTIONS • 8,192 x 8 bit organization TOP VIEW 28-PIN SOP • Access time: 500 ns (MAX.) • Power consumption: Operating: 60 mW (MAX.) @ 3 V Standby: 3 jiW (MAX.) @ 70°C @ 3 V 9 yiW (MAX.) @ 85°C @ 3 V


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    PDF LH5164ASH 28-pin, 450-mil LH5164ASH 28-PIN 450-mii 28TSOP

    LH5164ASHT

    Abstract: PEAK tray drawing VT12T
    Text: SHARP LH5 1 6 A S 5 1 Contents 1. Description 2 2. Pin Configuration 2 3. Truth Table 3 4. Block Diagram 3 5. Absolute Maximum Ratings 4 6. Recommended DC Operating Conditions . 4 7. DC Electrical Characteristics 4 8. AC Electrical Characteristics 5 9. Data Retention Characteristics


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    PDF 16AS5 LH5164ASHT TSOP28-P-0813 CV597. LH5164ASHT PEAK tray drawing VT12T

    LQ070T5BG01

    Abstract: LM24P20 LM162KS1 BSCR86L00 IR2C07 LM5Q31 IR3Y29B BSCU86L60 lq6bw lq6bw506
    Text: INDEX 1 0 4 - 1 0 9 _ DC_ GL1PR112.69 GL3KG63. 66 GL5EG41.66 1 0 4 - n 0 5 O o c .113 DC1B1CP. 100 GL1PR135.69 GL3KG8. 66


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    PDF 109-n GL1PR112. GL1PR135. GL1PR136. GL1PR211. GL1PR212. GL3KG63. GL3P201. GL3P202. GL3P305. LQ070T5BG01 LM24P20 LM162KS1 BSCR86L00 IR2C07 LM5Q31 IR3Y29B BSCU86L60 lq6bw lq6bw506

    IR3Y29B

    Abstract: ir3y26a1 IR4N IR3T24N IR3C08N ir2c53 ir2c05 li3301 IR3Y08 IR2E02
    Text: Index Model No. IR3T ARM710 ARM7DI ARM7DM ARM7TDMI ARM7TDMI-SPL ARM8 ARM810 CMOS CMOS CMOS CMOS F series G series J series K series ID22 series ID222XX ID223XX ID224XX ID226XX ID227XX ID229XX ID22DXX ID22FXX ID22HXX ID240 series ID240DXX ID240EXX ID240GXX


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    PDF ARM710 ARM810 IR3T24 IR3T24N IR3Y05Y IR3Y08 IR3Y12B IR3Y18A IR3Y21 IR3Y26A IR3Y29B ir3y26a1 IR4N IR3T24N IR3C08N ir2c53 ir2c05 li3301 IR2E02

    Untitled

    Abstract: No abstract text available
    Text: MEMORIES Low voltage operation Bit Capacity configuration 16 k 64k x8 x8 ★ Access time Supply current ns MAX. Cycle time Operating Standby (ns) MIN. (mA) MAX. (mA) MAX. Model No. LH5116SN x8 x8 1M x 16 2M x 16 *1 *5 *7 Supply Operating voltage temp. (V)


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    PDF 24SOP LH5116SN LH5164AVN/AVT LH5164AV3HN LH5164AVHN/AVHT LH5164AST LH5164ASHN/ASHT LH51V256N/T-85SL LH51V256HN/HT-85SL LH52CV256N/T-10LL

    LH5164

    Abstract: LH 192 lh5164 - 12
    Text: CMOS 64K 8K x 8 Static RAM FEATURES PIN CONNECTIONS • 8,192 x 8 bit organization 28-PIN SOP TOP VIEW • Access time: 500 ns (MAX.) NCC 1• •N 28 A12C 2 27 □ a 7[= 3 26 □ c e 2 Agd 4 25 □ Ag ASC a4C 5 24 □ Ag 6 23 □ A i , a 3d 7 22 □ 5 Ë


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    PDF 28-pin, 450-mil LH5164ASH 28-pin 28TSOP LH5164 LH 192 lh5164 - 12

    6AS5

    Abstract: TO48 package
    Text: >' " """ SPEC No. ISSUE: E L 0 8 3 1 6 7 Mar. 26. 1996 rc ; SPECI FI CATI ONS Product 64k Type SRAM L H5 1 6 4 ASHT Model No. LH 5 1 6 A S 5 ♦This specifications contains 1 5 pages including the cover and appendix. If you have any objections, please contact us before issuing purchasing order.


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    PDF I5-40TC LH5164ASHT TSQP28-P-- 6AS5 TO48 package

    lh5168

    Abstract: No abstract text available
    Text: MEMORIES Static RAMs ★ Under development P ro ce ss C a p a c ity C o n fig u ra tio n Model No. A c c e s s tim e n s 70 80 90 100 120 LH5116 2k X 8 16k LH51116H Operating temperature : - 40 to 8 5 t IUUU "O LH5116S Supply voltage : 3 V±10% LH5168 Full


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    PDF LH5116 LH51116H LH5116S LH5168 LH5168H LH5168V LH5168S LH5168SH LH5164AH 5164AV

    5268A

    Abstract: 28-SOP LH521002AK-2S 28SOP LH52256CVN
    Text: MEMORIES S tatic RAMs Process Capacity Configuation words Xbits 2k 16k 8 X Access time Supply current ns) MAX. Cycle time Operating, Standby (ns) MIN. !mA) MAX. (mA) MAX. Model No. Supply Operating voltage temp. 0C) m i i LH 5116/NA/D-10 100 40 0.001 5 ± 10%


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    PDF 5116/NA/D-10 LH5116H/HN/HD-10 LH5116SN LH5164A/AN-80L LH5164A /AT-10L 24DIP/24SOP/24SK-DIP 24SOP 28SOP/ 5268A 28-SOP LH521002AK-2S 28SOP LH52256CVN

    LH521007AK-20

    Abstract: No abstract text available
    Text: STATIC RAM ☆ New product ★ Under development STATIC RAMs ♦ Features • The product lineup includes a wide variety of bit configurations x4, x8, x l6 , x l8 , x32 . • High-speed synchronous devices for the secondary cache memory are available for use with low-voltage, lowpower CPUs idpal for portable equipment.


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    PDF LH5116SN LH5164AVN/AVT LH5164AV3HN 24SOP 28S0P/28TS0P LH5268A/AN/AD-1 52256C -70LIÆ 710LL LH521007AK-20

    IR2E27A

    Abstract: IR2C53 IR2E02 IR2E27 IR2E10 IR3N34 IR2E31A IR2E01 IR2C07 ir2e31
    Text: lndeX Model No. ARM7D CPU Core28,32,33 ARM7DM 28,33 CMOS CMOS CMOS CMOS 76 5A A F G 44 44 44 44 ID1 series ID2 series ID3 seríes ID21K064 ID21K128 ID21K256 ID21K512 ID21M010 ID21M015 ID21M020 ID21M040 ID22K256 ID22K512 ID22M010 ID22M020 ID22M040 ID22M080


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    PDF Core28 IR2C24A/AN IR2C26 IR2C30/N IR2C32 IR2C33 IR2C34 IR2C36 IR2C38/N IR2C43 IR2E27A IR2C53 IR2E02 IR2E27 IR2E10 IR3N34 IR2E31A IR2E01 IR2C07 ir2e31

    operating

    Abstract: LH52E1000
    Text: MEMORIES Static RAMs W ★ Under development Low voltage operation Capacity confjguratj0n 16k x8 64k Model No. Access time ns 8 5 2 0 0 2 5 0 5 00 10 0 0 x8 LH5116S Supply voltage : 3 V ± 10% Operating temperature : 0 to 50*C LH5164AV Supply voltage : 2.7 to 5.5 V


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    PDF LH5116S LH5164AV LH5164AV3H LH5164AVH LH5164AS LH5164ASH LH51V256 LH51V256H LH52E1000 LH51V1016CJ operating LH52E1000

    Untitled

    Abstract: No abstract text available
    Text: CMOS 64K 8K x 8 Static RAM FEATURES PIN CONNECTIONS • 8,192 x 8 bit organization TOP VIEW 28-PIN SOP • Access time: 500 ns (MAX.) / • Power consumption: Operating: 60 mW (MAX.) @ 3 V Standby: 3 jiW (MAX.) @ 70°C @ 3 V 9 jiW (MAX.) @ 85°C @ 3 V • Fully-static operation


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    PDF 28-PIN 28-pin, 450-mil E164ASH-1 28-pin LH5164ASH OP028-P-0450)

    Untitled

    Abstract: No abstract text available
    Text: CMOS 64K 8K x 8 Static RAM FEATURES PIN CONNECTIONS • 8,192 x 8 bit organization TOP VIEW 28-PIN SOP • Access time: 500 ns (MAX.) s 'S 28 a , 2IZ 2 27 □ WE a 7C 3 26 □ c e 2 O O > 1• E I • Power consumption: Operating: 60 mW (MAX.) @ 3 V Standby:


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    PDF 28-PIN 5164ASH-1 28-pin, 450-uun LH5164ASH 450-mil OP028-P-0450)