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    LH52258A Search Results

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    LH52258A Price and Stock

    Sharp Microelectronics of the Americas LH52258AK-20

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    Bristol Electronics LH52258AK-20 438
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    LH52258AK-20 131
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    Quest Components LH52258AK-20 1,256
    • 1 $6.3
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    • 1000 $3.15
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    LH52258AK-20 741
    • 1 $6.3
    • 10 $6.3
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    LH52258AK-20 236
    • 1 $6.288
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    • 100 $3.8776
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    Sharp Microelectronics of the Americas LH52258AK-25

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    Bristol Electronics LH52258AK-25 84 1
    • 1 $10.08
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    Quest Components LH52258AK-25 8
    • 1 $13.5
    • 10 $6.75
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    NexGen Digital LH52258AK-25 91
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    Sharp Microelectronics of the Americas LH52258AD-20

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    Bristol Electronics LH52258AD-20 17
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    Quest Components LH52258AD-20 4
    • 1 $15
    • 10 $11
    • 100 $11
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    Sharp Microelectronics of the Americas LH52258AD-25

    Static RAM, 32Kx8, 28 Pin, Plastic, DIP
    Distributors Part Package Stock Lead Time Min Order Qty Price Buy
    Quest Components LH52258AD-25 1
    • 1 $60.6336
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    LH52258A Datasheets (5)

    Part ECAD Model Manufacturer Description Curated Type PDF
    LH52258A Sharp CMOS 32K x 8 Static RAM Original PDF
    LH52258AD-20 Sharp CMOS 32K x 8 static RAM Original PDF
    LH52258AD-25 Sharp CMOS 32K x 8 static RAM Original PDF
    LH52258AK-20 Sharp CMOS 32K x 8 static RAM Original PDF
    LH52258AK-25 Sharp CMOS 32K x 8 static RAM Original PDF

    LH52258A Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    LH52258A

    Abstract: SOJ8
    Text: LH52258A FEATURES • Fast Access Times: 20/25 ns • Low-Power Standby when Deselected • TTL Compatible I/O • 5 V ± 10% Supply • Fully-Static Operation • JEDEC Standard Pinout • Packages: 28-Pin, 300-mil DIP 28-Pin, 300-mil SOJ FUNCTIONAL DESCRIPTION


    Original
    PDF LH52258A 28-Pin, 300-mil LH52258A 28SOJ300 SOJ8

    soj28p300

    Abstract: LH52258A
    Text: LH52258A FEATURES • Fast Access Times: 20/25 ns • Low-Power Standby when Deselected • TTL Compatible I/O • 5 V ± 10% Supply • Fully-Static Operation • JEDEC Standard Pinout • Packages: 28-Pin, 300-mil DIP 28-Pin, 300-mil SOJ FUNCTIONAL DESCRIPTION


    Original
    PDF LH52258A 28-Pin, 300-mil LH52258A 28SOJ300 soj28p300

    mn4117405

    Abstract: NN5118165 XL93LC46AP NN514265 MS6264L-10PC w24M257 NN514265A w24m257ak-15 HY62256ALP10 mhs p80c51
    Text: ISSI CROSS REFERENCE GUIDE Integrated Silicon Solution, Inc. ISSI ® Integrated Silicon Solution, Inc. CROSS REFERENCE GUIDE SRAM DRAM EEPROM EPROM MICROCONTROLLER JUNE 1999 Integrated Silicon Solution, Inc. CP005-1F 6/1/99 1 ISSI CROSS REFERENCE GUIDE


    Original
    PDF CP005-1F IS89C51 Z16C02 Z86E30 ZZ16C03 Z8036 Z8536 Z8038 Z5380 Z53C80 mn4117405 NN5118165 XL93LC46AP NN514265 MS6264L-10PC w24M257 NN514265A w24m257ak-15 HY62256ALP10 mhs p80c51

    UM61256AK-15

    Abstract: UM61256ak sram um61256ck-20 HY62256ALP10 XL93LC46AP w24m257 GVT7164D32Q-6 km62256blg-7 w24m257ak-15 UM61256
    Text: ISSI CROSS REFERENCE GUIDE Integrated Silicon Solution, Inc. ISSI ® Integrated Silicon Solution, Inc. CROSS REFERENCE GUIDE SRAM DRAM EEPROM EPROM FLASH MICROCONTROLLER SERIAL FLASH JULY 1998 Integrated Silicon Solution, Inc. CP005-1E 7/1/98 1 ISSI CROSS REFERENCE GUIDE


    Original
    PDF CP005-1E AS7C1024-12JC AS7C1024-12PC AS7C1024-12TJC AS7C1024-12TPC AS7C1024-15JC AS7C1024-15PC AS7C1024-15TJC AS7C1024-15TPC AS7C1024-20JC UM61256AK-15 UM61256ak sram um61256ck-20 HY62256ALP10 XL93LC46AP w24m257 GVT7164D32Q-6 km62256blg-7 w24m257ak-15 UM61256

    um61256ak-15

    Abstract: w24m257ak-15 um61256 um61256ck-20 um61256ak-12 km62256blg-7 KM68257Bp-20 W24M257AK HY6264ALP-10 w24M257
    Text: ISSI Integrated Silicon Solution, Inc. CROSS REFERENCE GUIDE SRAM/NVM Serial EEPROM EPROM FLASH Static RAM SEPTEMBER 1996 CROSS REFERENCE GUIDE E2PROM ATMEL ISSI MIL PACKAGE SYMBOL PC P SC G SC GR AT93C46-10PC AT93C46-10PC-2.7 AT93C46-10SC AT93C46-10SC-2.7


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    PDF AT93C46-10PC AT93C46-10PC-2 AT93C46-10SC AT93C46-10SC-2 AT93C46R-10SC AT93C46R-10SC-2 AT93C46W-10SC AT93C46W-10SC-2 AT93C56-10PC AT93C56-10PC-2 um61256ak-15 w24m257ak-15 um61256 um61256ck-20 um61256ak-12 km62256blg-7 KM68257Bp-20 W24M257AK HY6264ALP-10 w24M257

    Untitled

    Abstract: No abstract text available
    Text: LH52258A CMOS 32K x 8 Static RAM When E is LOW and W is HIGH, a static Read will occur at the memory location specified by the address lines. G must be brought LOW to enable the outputs. Since the device is fully static in operation, new Read cycles can be


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    PDF 28-Pin, 300-mil LH52258A 28soj300

    Untitled

    Abstract: No abstract text available
    Text: LH52258A FEATURES • Fast Access Times: 20/25 ns • Low Power Standby when Deselected • TTL Compatible I/O • 5 V± 10% Supply • Fully Static Operation • JEDEC Standard Pinout • Packages: 28-Pin, 300-mil DIP 28-Pin, 300-mil SOJ CMOS 32K x 8 Static RAM


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    PDF LH52258A 28-Pin, 300-mil LH52258A 28-Din, DIP28-P-300)

    Untitled

    Abstract: No abstract text available
    Text: PRELIMINARY LH52258A FEATURES CMOS 32K X 8 Static RAM When E is LOW and W is HIGH, a static Read will occur at the memory location specified by the address lines. G must be brought LOW to enable the outputs. Since the device is fully static in operation, new Read


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    PDF LH52258A 28-Pin, 300-mil DIP28-P-300)

    LH522

    Abstract: No abstract text available
    Text: LH52258A FEATURES • Fast Access Times: 20/25 ns • Low-Power Standby when Deselected • TTL Compatible I/O • 5 V ± 10% Supply • Fully-Static Operation • JEDEC Standard Pinout • Packages: 28-Pin, 300-mil DIP 28-Pin, 300-mil SOJ FUNCTIONAL DESCRIPTION


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    PDF LH52258A 28-Pin, 300-mil LH52258A LH522

    Untitled

    Abstract: No abstract text available
    Text: LH52258A FEATURES • Fast Access Times: 20/25 ns • Low-Power Standby when Deselected • TTL Compatible I/O • 5 V ± 10% Supply • Fully-Static Operation • JEDEC Standard Pinout • Packages: 28-Pin, 300-mil DIP 28-Pin, 300-mil SOJ FUNCTIONAL DESCRIPTION


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    PDF LH52258A 28-Pin, 300-mil LH52258A 300-mii

    lh57257

    Abstract: IR2E31 IR2E01 IR2C07 IR2E27 IR2E24 IR2E19 IR2E31A IR3n06 IR2E02
    Text: Index Model No. ARM7D CPU Core Bi-CMOS 1 27 40,42 _ _ CMOS CMOS CMOS CMOS CMOS 4A 5A 8 A AH D ID1 Series ID2 Series 40,42 40.42 40,42 40,42 40 B ü.’1*"! 14,15 14 m IR2339 IR2403 IR2406 IR2406G IR2410 IR2411 IR2415 IR2419 IR2420 IR2422 IR2425 IR2429


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    PDF IR2E201 IR2E24 IR2E27/A IR2E28 IR2E29 IR2E30 IR2E31/A IR2E32N9 IR2E34 IR2E41 lh57257 IR2E31 IR2E01 IR2C07 IR2E27 IR2E19 IR2E31A IR3n06 IR2E02

    Untitled

    Abstract: No abstract text available
    Text: MEMORIES * S tic RAMs Process C apacity Configuration Model No. A ccess tim e ns 70 80 90 100 120 LH5116 16k Full CMOS 64k 2k X 8 8k X 8 LH5116H f- Supply voltage : 5 V * 10% QpewBng tew ^raw » : ~ 40to85'C LH5116S j- Supply voltage : 3 V ± 10% LH5164A


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    PDF LH5116 LH5116H LH5116S LH5164A LH5164AH 40to85 LH5164AV LH51V256H LH5268A LH52256A

    BNK-17

    Abstract: No abstract text available
    Text: MEMORIES ★Under development • S ta tic RA M s Process Capacity Configuration words X bits Modal No. 2k X 8 Full CMOS 64k 8k X 8 256k 32k X 8 64k 8k X 8 64k X 4 256k 32k X 8 64k X 8 CMOS periphery 100 40/0.001 5 ± 10% O to 70 100 40/0.001 5 ± 10% - 4 0 to 85


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    PDF LH5116/NA/D-10 LH5116H/HN/HD-10 LH5116SN 24SOP 28SOJ 400mil) LH521002BK/BNK-17/L LH521002BK/BNK-20/L LH521002BK/BNK-2S/L LH521007AK-20 BNK-17

    5Z25

    Abstract: No abstract text available
    Text: CMOS 32K x 8 Static RAM FEATURES • Fast Access Times: 20/25 ns • Low-Power Standby when Deselected • TTL Compatible I/O • 5 V + 10% Supply • Fully-Static Operation • JEDEC Standard Pinout • Packages: 28-Pin, 300-mil DIP 28-Pin, 300-mil SOJ FUNCTIONAL DESCRIPTION


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    PDF 28-Pin, 300-mil LH52258A 28DIP-1 LH52258A 5Z25

    organizational structure samsung

    Abstract: NMS256X8 MICRON Cross Reference NMS256 256K RAM HM62256 MK6264 51256SL TC5565 "cross reference" MN44256 M5M5256
    Text: Static RAM Cross Reference STATIC RAM CROSS REFERENCE ORGANIZATIONAL STRUCTURE 2K 2K X X 32K 8K X e w/CE, OE 8 W/CE1, CE2 X 8 Stow 8 Slow COMPETITIVE VENDOR SH ARP MODEL LH5116 LH5118 LH51256 LH5164A AMD Am9128 Harris CDM6116 Hitachi HM6116A Hyundai HY6116


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    PDF LH5116 Am9128 CDM6116 HM6116A HY6116 HM6116 MS6516 SRM2016 MK6116 CXK5816 organizational structure samsung NMS256X8 MICRON Cross Reference NMS256 256K RAM HM62256 MK6264 51256SL TC5565 "cross reference" MN44256 M5M5256

    LH5911

    Abstract: lh5167-55 LH5101 LH52250 LH5160D LH5167 LH52252 LH5114H lh5160n 4kx8 static ram ttl
    Text: NOV 0 5 1990 L H 5 9 1 1 /L H 5 9 1 2 /L H 5 9 1 4 2K x 8 CMOS Dual Port RAM Preliminary Data Sheet Functional Description Features The LH5911. LH5912 and LH5914are dual port static RAMs that use true dual port memory cells to allow each port to independently access any location in memory.


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    PDF LH5911 /LH5912/LH5914 LH5911. LH5912 LH5914are LH5914 16Kx18 LH52270 lh5167-55 LH5101 LH52250 LH5160D LH5167 LH52252 LH5114H lh5160n 4kx8 static ram ttl

    lh5168

    Abstract: No abstract text available
    Text: MEMORIES Static RAMs ★ Under development P ro ce ss C a p a c ity C o n fig u ra tio n Model No. A c c e s s tim e n s 70 80 90 100 120 LH5116 2k X 8 16k LH51116H Operating temperature : - 40 to 8 5 t IUUU "O LH5116S Supply voltage : 3 V±10% LH5168 Full


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    PDF LH5116 LH51116H LH5116S LH5168 LH5168H LH5168V LH5168S LH5168SH LH5164AH 5164AV

    5268A

    Abstract: 28-SOP LH521002AK-2S 28SOP LH52256CVN
    Text: MEMORIES S tatic RAMs Process Capacity Configuation words Xbits 2k 16k 8 X Access time Supply current ns) MAX. Cycle time Operating, Standby (ns) MIN. !mA) MAX. (mA) MAX. Model No. Supply Operating voltage temp. 0C) m i i LH 5116/NA/D-10 100 40 0.001 5 ± 10%


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    PDF 5116/NA/D-10 LH5116H/HN/HD-10 LH5116SN LH5164A/AN-80L LH5164A /AT-10L 24DIP/24SOP/24SK-DIP 24SOP 28SOP/ 5268A 28-SOP LH521002AK-2S 28SOP LH52256CVN

    9660t

    Abstract: LH521008
    Text: SHARP b OE CORP D • Ô1ÔD7TÔ DDDTME? 302 «SRPJ 'T - H C - 2 3 - / O LH101504 LH101510 . R E L I M I N A Ü 3 H 1 3 C5 WF A,s Au Ai 3 R Y High-Speed BiCMOS 1M 1M xi ECL Static RAM ■ Description ■ The LH101504/LH101510 is a 256K/1M-bit high speed


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    PDF LH101504 LH101510 LH101504/LH101510 256K/1M-bit 742S6 9660t LH521008

    IR2E27A

    Abstract: IR2C53 IR2E02 IR2E27 IR2E10 IR3N34 IR2E31A IR2E01 IR2C07 ir2e31
    Text: lndeX Model No. ARM7D CPU Core28,32,33 ARM7DM 28,33 CMOS CMOS CMOS CMOS 76 5A A F G 44 44 44 44 ID1 series ID2 series ID3 seríes ID21K064 ID21K128 ID21K256 ID21K512 ID21M010 ID21M015 ID21M020 ID21M040 ID22K256 ID22K512 ID22M010 ID22M020 ID22M040 ID22M080


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    PDF Core28 IR2C24A/AN IR2C26 IR2C30/N IR2C32 IR2C33 IR2C34 IR2C36 IR2C38/N IR2C43 IR2E27A IR2C53 IR2E02 IR2E27 IR2E10 IR3N34 IR2E31A IR2E01 IR2C07 ir2e31

    32K x 8 HIGH SPEED CMOS STATIC RAM

    Abstract: No abstract text available
    Text: SHARP ELEK/ MELEC DIV 44E D M fllflDTRS 0 0 0 4 ci33 b BISRPJ I I4 K O O K Q A PRELIMINARY CMOS 32K X - 71 vi FEATURES 8 Static RAM When E is LOW and W is HIGH, a static Read will occur at the memory location specified by the address


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    PDF LH52258A 28-Pin, 300-mil 31007RÃ 32K x 8 HIGH SPEED CMOS STATIC RAM

    100 10L AD

    Abstract: LH521007AK-25 LH5168ST LH5168SHN lh5168 LH521002AK20
    Text: MEMORIES • S ta tic R A M s Process Capacity ★ U nderdevelopm ent Configuration words Xbits Model No. Access tim e Supply current (ns) MAX. Cycle time operating/standby ImA) MAX. (ns) MIN. Supply voltage (V) Operating temperature (1C) Package LH5116/NA/D-10


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    PDF LH5116/NA/D-10 100LQFP H/AHN/AHD/AHT-10L LH5164AVN/AVT LH5164AVHN/AVHT LH5164ASHN/ASHT LH51256/N-10L LH51V1032C4M-15 LH51V1032C4M-17 LH5268A/AN/AD-1 100 10L AD LH521007AK-25 LH5168ST LH5168SHN lh5168 LH521002AK20