Please enter a valid full or partial manufacturer part number with a minimum of 3 letters or numbers

    LH51V2016 Search Results

    LH51V2016 Datasheets (1)

    Part ECAD Model Manufacturer Description Curated Type PDF
    LH51V2016JY-85LL Sharp 131,072 x 16-Bit Static RAM Scan PDF

    LH51V2016 Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    LH51V2016

    Abstract: Pager transistor A16
    Text: PRODUCT INFORMATION LH51V2016 128K x 16 SRAM 52-BALL CSP PINOUT 52-BALL CSP DESCRIPTION The LH51V2016 is a static RAM organized as 131,072 × 16-bit which provides low-power standby mode. It is fabricated using silicon-gate CMOS process technology. TOP VIEW


    Original
    PDF LH51V2016 52-BALL FBGA052-P-0610) I/O16) LH51V2016 16-bit I/O16 MS-J10105; Pager transistor A16

    mn4117405

    Abstract: NN5118165 XL93LC46AP NN514265 MS6264L-10PC w24M257 NN514265A w24m257ak-15 HY62256ALP10 mhs p80c51
    Text: ISSI CROSS REFERENCE GUIDE Integrated Silicon Solution, Inc. ISSI ® Integrated Silicon Solution, Inc. CROSS REFERENCE GUIDE SRAM DRAM EEPROM EPROM MICROCONTROLLER JUNE 1999 Integrated Silicon Solution, Inc. CP005-1F 6/1/99 1 ISSI CROSS REFERENCE GUIDE


    Original
    PDF CP005-1F IS89C51 Z16C02 Z86E30 ZZ16C03 Z8036 Z8536 Z8038 Z5380 Z53C80 mn4117405 NN5118165 XL93LC46AP NN514265 MS6264L-10PC w24M257 NN514265A w24m257ak-15 HY62256ALP10 mhs p80c51

    Untitled

    Abstract: No abstract text available
    Text: LH51V2016JS-85LL 128K • 16 SRAM Model No.: LH2V266S Spec No.: MS-J10402 Issue Date: May 28, 1998 NOTE: This document contains initial characterization limits that are subject to change upon full characterization of product devices. SHARP L H S V 2 6 6 S


    OCR Scan
    PDF LH51V2016JS-85LL LH2V266S) MS-J10402 LH51V2016JS

    Untitled

    Abstract: No abstract text available
    Text: SHARP SPEC No. ISSUE: M S - J I 0 1 0 5 D ! Tul. 23. 1998 To ; S P E C I F I C A T I O N S Product Type 1 2 8 K x 1 6 S R A M L H 5 1 V2 0 1 6 J Y - 8 5 L L Model No. T h i s specifications contains L H S V 2 6 6 Y 1 3 pages including the cover and appendix.


    OCR Scan
    PDF LH51V2016JY

    LQ070T5BG01

    Abstract: LM24P20 LM162KS1 BSCR86L00 IR2C07 LM5Q31 IR3Y29B BSCU86L60 lq6bw lq6bw506
    Text: INDEX 1 0 4 - 1 0 9 _ DC_ GL1PR112.69 GL3KG63. 66 GL5EG41.66 1 0 4 - n 0 5 O o c .113 DC1B1CP. 100 GL1PR135.69 GL3KG8. 66


    OCR Scan
    PDF 109-n GL1PR112. GL1PR135. GL1PR136. GL1PR211. GL1PR212. GL3KG63. GL3P201. GL3P202. GL3P305. LQ070T5BG01 LM24P20 LM162KS1 BSCR86L00 IR2C07 LM5Q31 IR3Y29B BSCU86L60 lq6bw lq6bw506

    IR3Y29B

    Abstract: ir3y26a1 IR4N IR3T24N IR3C08N ir2c53 ir2c05 li3301 IR3Y08 IR2E02
    Text: Index Model No. IR3T ARM710 ARM7DI ARM7DM ARM7TDMI ARM7TDMI-SPL ARM8 ARM810 CMOS CMOS CMOS CMOS F series G series J series K series ID22 series ID222XX ID223XX ID224XX ID226XX ID227XX ID229XX ID22DXX ID22FXX ID22HXX ID240 series ID240DXX ID240EXX ID240GXX


    OCR Scan
    PDF ARM710 ARM810 IR3T24 IR3T24N IR3Y05Y IR3Y08 IR3Y12B IR3Y18A IR3Y21 IR3Y26A IR3Y29B ir3y26a1 IR4N IR3T24N IR3C08N ir2c53 ir2c05 li3301 IR2E02

    Untitled

    Abstract: No abstract text available
    Text: MEMORIES Low voltage operation Bit Capacity configuration 16 k 64k x8 x8 ★ Access time Supply current ns MAX. Cycle time Operating Standby (ns) MIN. (mA) MAX. (mA) MAX. Model No. LH5116SN x8 x8 1M x 16 2M x 16 *1 *5 *7 Supply Operating voltage temp. (V)


    OCR Scan
    PDF 24SOP LH5116SN LH5164AVN/AVT LH5164AV3HN LH5164AVHN/AVHT LH5164AST LH5164ASHN/ASHT LH51V256N/T-85SL LH51V256HN/HT-85SL LH52CV256N/T-10LL

    LH521007AK-20

    Abstract: No abstract text available
    Text: STATIC RAM ☆ New product ★ Under development STATIC RAMs ♦ Features • The product lineup includes a wide variety of bit configurations x4, x8, x l6 , x l8 , x32 . • High-speed synchronous devices for the secondary cache memory are available for use with low-voltage, lowpower CPUs idpal for portable equipment.


    OCR Scan
    PDF LH5116SN LH5164AVN/AVT LH5164AV3HN 24SOP 28S0P/28TS0P LH5268A/AN/AD-1 52256C -70LIÆ 710LL LH521007AK-20

    operating

    Abstract: LH52E1000
    Text: MEMORIES Static RAMs W ★ Under development Low voltage operation Capacity confjguratj0n 16k x8 64k Model No. Access time ns 8 5 2 0 0 2 5 0 5 00 10 0 0 x8 LH5116S Supply voltage : 3 V ± 10% Operating temperature : 0 to 50*C LH5164AV Supply voltage : 2.7 to 5.5 V


    OCR Scan
    PDF LH5116S LH5164AV LH5164AV3H LH5164AVH LH5164AS LH5164ASH LH51V256 LH51V256H LH52E1000 LH51V1016CJ operating LH52E1000