SL-CQ352
Abstract: No abstract text available
Text: Application Note AC342 CQFP to CLGA Adapter Socket Table of Contents Introduction . . . . . . . . . . . . . . . . . . . . . . CQ to LG Adapter Socket . . . . . . . . . . . . . . . CQ to LG Adapter Socket Assembly Procedure . . . CQ352 to LG1272 Adapter Socket Outline Drawing .
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AC342
CQ352
LG1272
SL-CQ352
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CCGA
Abstract: cq 949
Text: Application Note AC341 CCGA to CLGA Adapter Socket Table of Contents Introduction . . . . . . . . . . . . . . . . . . . . . . CG to LG Adapter Socket . . . . . . . . . . . . . . . CG to LG Adapter Socket Assembly Procedure . . . CG1272 to LG1272 Adapter Socket Outline Drawing
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AC341
CG1272
LG1272
CCGA
cq 949
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SDTNFAH-256
Abstract: TC58NVG0S3AFT SDTNFcH-512
Text: Preliminary Create i5068-LG i5068-LG USB Flash Disk Controller Data Sheet Preliminary Version 0.21 iCreate Technologies Corporation Release date: 05/24/2006 2006 iCreate Technologies Corporation This document contains preliminary information on product but not yet fully characterized.
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i5068-LG
TEST44
SDTNFAH-256
TC58NVG0S3AFT
SDTNFcH-512
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Untitled
Abstract: No abstract text available
Text: Create i5122-L/i5122-LG i5122-L/i5122-LG High-Speed USB Flash Disk Controller Preliminary Data Sheet Version 0.34 iCreate Technologies Corporation Release date: 12/08/2005 2005 iCreate Technologies Corporation This document contains preliminary information on product but not yet fully characterized.
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i5122-L/i5122-LG
VD33P/VD33
VS33P/VS33
16Gbit
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Q65110A1746
Abstract: LG L29K
Text: SmartLED 0603 LG L29K Released Besondere Merkmale • Gehäusetyp: SMT Gehäuse 0603, farbloser diffuser Verguss • Besonderheit des Bauteils: kleinste Bauform 1,7 mm x 0,8 mm x 0,65 mm LxBxH • Wellenlänge: 570 nm (grün) • Abstrahlwinkel: extrem breite
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5000/Rolle
10000/Rolle,
JESD22-A114-D
D-93055
Q65110A1746
LG L29K
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Untitled
Abstract: No abstract text available
Text: Preliminary‡ 512Mb: x16, x32 Automotive Mobile LPSDR SDRAM Features Automotive Mobile LPSDR SDRAM MT48H32M16LF – 8 Meg x 16 x 4 Banks MT48H16M32LF/LG – 4 Meg x 32 x 4 Banks Features Options Marking • VDD/VDDQ: 1.8V/1.8V • Addressing – Standard addressing option
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512Mb:
MT48H32M16LF
MT48H16M32LF/LG
09005aef8459c827)
09005aef8511d87c
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Untitled
Abstract: No abstract text available
Text: 512Mb: x16, x32 Automotive Mobile LPSDR SDRAM Features Automotive Mobile LPSDR SDRAM MT48H32M16LF – 8 Meg x 16 x 4 Banks MT48H16M32LF/LG – 4 Meg x 32 x 4 Banks Features Options Marking • VDD/VDDQ: 1.8V/1.8V • Addressing – Standard addressing option
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512Mb:
MT48H32M16LF
MT48H16M32LF/LG
54-ball
90-ball
IDD2/IDD71
09005aef8511d87c
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L 3705 N
Abstract: No abstract text available
Text: 512Mb: x16, x32 Mobile DDR SDRAM Features Mobile DDR SDRAM MT46H32M16LF – 8 Meg x 16 x 4 banks MT46H16M32LF/LG – 4 Meg x 32 x 4 banks Preliminary‡ For the latest data sheet, refer to Micron’s Web site: www.micron.com/mobile Features • • • •
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512Mb:
MT46H32M16LF
MT46H16M32LF/LG
09005aef81a16e9d/Source:
09005aef81a6c5f3
MT46H32M16LF
L 3705 N
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Untitled
Abstract: No abstract text available
Text: Preliminary‡ 512Mb: x16, x32 Mobile DDR SDRAM Features Mobile DDR SDRAM MT46H32M16LF – 8 Meg x 16 x 4 banks MT46H16M32LF/LG – 4 Meg x 32 x 4 banks For the latest data sheet, refer to Micron’s Web site: www.micron.com/mobile Features • • • •
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512Mb:
MT46H32M16LF
MT46H16M32LF/LG
09005aef818ff7c5/Source:
09005aef81a6c5f3
MT46H32M16LF
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Untitled
Abstract: No abstract text available
Text: Advance‡ 512Mb: x16, x32 Mobile DDR SDRAM Features Mobile DDR SDRAM MT46H32M16LF – 8 Meg x 16 x 4 banks MT46H16M32LF/LG – 4 Meg x 32 x 4 banks For the latest data sheet, please refer to Micron’s Web site: www.micron.com/mobile Features • • •
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512Mb:
MT46H32M16LF
MT46H16M32LF/LG
09005aef818ff7c5/Source:
09005aef81a6c5f3
MT46H32M16LF
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3120 32M16
Abstract: No abstract text available
Text: Advance‡ 512Mb: 32 Meg x 16, 16 Meg x 32 Mobile SDRAM Features Mobile Low-Power SDR SDRAM MT48H32M16LF – 8 Meg x 16 x 4 Banks MT48H16M32LF/LG – 4 Meg x 32 x 4 Banks Features Options • VDD/VDDQ: 1.8V/1.8V • Addressing – Standard addressing option
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512Mb:
MT48H32M16LF
MT48H16M32LF/LG
09005aef83ea581f
3120 32M16
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MT46H32M16LF
Abstract: dmo 365 r
Text: 512Mb: x16, x32 Mobile DDR SDRAM Features Mobile DDR SDRAM MT46H32M16LF – 8 Meg x 16 x 4 banks MT46H16M32LF/LG – 4 Meg x 32 x 4 banks For the latest data sheet, refer to Micron’s Web site: www.micron.com/mobile Features • • • • • • • •
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512Mb:
MT46H32M16LF
MT46H16M32LF/LG
09005aef81a16e9d/Source:
09005aef81a6c5f3
MT46H32M16LF
dmo 365 r
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MT48H32M16LF
Abstract: No abstract text available
Text: Preliminary‡ 512Mb: 32 Meg x 16, 16 Meg x 32 Mobile SDRAM Features Mobile SDRAM MT48H32M16LF – 8 Meg x 16 x 4 banks MT48H16M32LF/LG – 4 Meg x 32 x 4 banks For the latest data sheet, refer to Micron’s Web site: http://www.micron.com/mobile Features
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512Mb:
MT48H32M16LF
MT48H16M32LF/LG
09005aef81ca5de4/Source:
09005aef81ca5e03
MT48H32M16LF
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marking cj4
Abstract: Mobile SDRAM smd marking cj4 MT48H16M32
Text: Preliminary‡ 512Mb: 32 Meg x 16, 16 Meg x 32 Mobile SDRAM Features Mobile SDRAM MT48H32M16LF – 8 Meg x 16 x 4 banks MT48H16M32LF/LG – 4 Meg x 32 x 4 banks For the latest data sheet, refer to Micron’s Web site: http://www.micron.com/mobile Features
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512Mb:
MT48H32M16LF
MT48H16M32LF/LG
09005aef81ca5de4/Source:
09005aef81ca5e03
MT48H32M16LF
marking cj4
Mobile SDRAM
smd marking cj4
MT48H16M32
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Untitled
Abstract: No abstract text available
Text: Advance‡ 256Mb: 16 Meg x 16, 8 Meg x 32 Mobile DDR SDRAM Features Mobile Double Data Rate DDR SDRAM MT46H16M16LF - 4 Meg x 16 x 4 banks MT46H8M32LF/LG - 2 Meg x 32 x 4 banks For the latest data sheet, refer to Micron's Web site: http:\\www.micron.com/mobile
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256Mb:
MT46H16M16LF
MT46H8M32LF/LG
09005aef82091978
09005aef8209195b
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MT46H32M16LF
Abstract: BA0A12
Text: 512Mb: x16, x32 Mobile DDR SDRAM Features Mobile DDR SDRAM MT46H32M16LF – 8 Meg x 16 x 4 banks MT46H16M32LF/LG – 4 Meg x 32 x 4 banks For the latest data sheet, refer to Micron’s Web site: www.micron.com/mobile Features • • • • • • • •
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512Mb:
MT46H32M16LF
MT46H16M32LF/LG
09005aef81a16e9d/Source:
09005aef81a6c5f3
MT46H32M16LF
BA0A12
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MT46H32M16LF
Abstract: micron lpddr 90 ball VFBGA MT46H16M32 smd marking code T2N G3CK 60-BALL
Text: 512Mb: x16, x32 Mobile DDR SDRAM Features Mobile DDR SDRAM MT46H32M16LF – 8 Meg x 16 x 4 banks MT46H16M32LF/LG – 4 Meg x 32 x 4 banks For the latest data sheet, refer to Micron’s Web site: www.micron.com Features Table 2: • VDD/VDDQ = 1.70–1.95V
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512Mb:
MT46H32M16LF
MT46H16M32LF/LG
09005aef81a16e9d/Source:
09005aef81a6c5f3
MT46H32M16LF
micron lpddr
90 ball VFBGA
MT46H16M32
smd marking code T2N
G3CK
60-BALL
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Untitled
Abstract: No abstract text available
Text: Advance‡ 512Mb: 32 Meg x 16, 16 Meg x 32 Mobile SDRAM Features Mobile SDRAM MT48H32M16LF – 8 Meg x 16 x 4 banks MT48H16M32LF/LG – 4 Meg x 32 x 4 banks Features Options • VDD/VDDQ = 1.7–1.95V • Fully synchronous; all signals registered on positive
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512Mb:
MT48H32M16LF
MT48H16M32LF/LG
09005aef82ea3742/Source:
09005aef82ea3752
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Untitled
Abstract: No abstract text available
Text: 256Mb: x16, x32 Mobile DDR SDRAM Features Mobile DDR SDRAM MT46H16M16LF – 4 Meg x 16 x 4 banks MT46H8M32LF/LG – 2 Meg x 32 x 4 banks For the latest data sheet, refer to Micron’s Web site: www.micron.com Features • • • • • • • • • •
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256Mb:
MT46H16M16LF
MT46H8M32LF/LG
09005aef82091978
09005aef8209195b
MT46H16M16LF_
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A100S
Abstract: MT48H32M32
Text: 1Gb: x32 Mobile LPSDR SDRAM Features Mobile LPSDR SDRAM MT48H32M32LF/LG – 8 Meg x 32 x 4 Banks Features Options Marking • VDD/VDDQ: 1.8V/1.8V • Addressing – Standard addressing option – Reduced page size option1 • Configuration – 32 Meg x 32 8 Meg x 32 x 4
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MT48H32M32LF/LG
09005aef8404b23d
A100S
MT48H32M32
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connector 30990
Abstract: DUPONT CONNECTOR
Text: i PRODUCT NO SEE TABLE D RECOMMENDED HOLE PATTERN SCALE C B 10:1 8 7 PRODUCT NO SEE TABLE OESCHIPTICN STYLE A 1. RECOMMENDED MOUNTING SCREW SIZE:2-56 FILLISTER HD MACH SCREW, .38 LG FOR 1/16 5. 3/32 BOARD.43 LG FOR 1/8 BOARD. 2. MOLDING MAT'L:30% GLASS FILLED POLYESTER.FLAME RETAROANT PER UL-94V-0,
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UL-94V-0,
C-51000.
76u/30u
27u/50u
38u/I5u
0000t
connector 30990
DUPONT CONNECTOR
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Untitled
Abstract: No abstract text available
Text: THE INFORMATION CONTAINED HEREIN IS CONSIDERED 'PROPRIETARY' TO BEL FUSE INC. AND SHALL NOT BE COPIED, REPRODUCED OR DISCLOSED WITHOUT THE WRITTEN APPROVAL OF BEL FUSE INC. RoHS 2002/95/EC SCHEMATIC ELECTRICAL CHARACTERISTICS lg 25*C TURNS RATID TX RX □CL @ lOOkHz/lOOnVRMS
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2002/95/EC
100MHz
lMHz-30MHz
30MHz-60MHz
60MHz-80MHz
20LDG
F/30MHz)
DC002
895-1001-EN
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IDA45
Abstract: RDRAM Clock
Text: Direct RDRAM LG Semicon Co.,Ltd PRELIMINARY 64/72-Mbit 256Kx16/18x16d Overview The Rambus Direct RDRAM™ is a general purpose highperformance memory device suitable for use in a broad range of applications including computer memory, graphics, video, and any other application where high bandwidth and
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64/72-Mbit
256Kx16/18x16d)
64/72-Mbit
600MHz
800MHz
DL0035-00
IDA45
RDRAM Clock
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Untitled
Abstract: No abstract text available
Text: THE INFORMATION CONTAINED HEREIN IS CONSIDERED 'PROPRIETARY' TO BEL FUSE INC, AND SHALL NOT BE COPIED, REPRODUCED OR DISCLOSED WITHOUT THE WRITTEN APPROVAL OF BEL FUSE INC. RoHS 2002/95/ECj LED g 8, 4 POLARITY LED 1 & 3 POLARITY PIN 11 PIN lg COLDR PIN 13 PIN 14 CDLDR
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2002/95/ECj
65MHz
65MHz
100MHz
100MHz
5MHz-40MHz
350juH
40MHz-100MHz
DC002
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