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Untitled Abstract: No abstract text available Text: Advance‡ 512Mb: 32 Meg x 16, 16 Meg x 32 Mobile SDRAM Features Mobile SDRAM MT48H32M16LF– 8 Meg x 16 x 4 banks MT48H16M32LF – 4 Meg x 32 x 4 banks For the latest data sheet, refer to Micron’s Web site: http://www.micron.com/mobile Table 1: Features	Original	PDF	512Mb: MT48H32M16LF MT48H16M32LF 09005aef81ca5de4/Source: 09005aef81ca5e03 MT48H32M16LF
MT48H32M16LF Abstract: No abstract text available Text: Preliminary‡ 512Mb: 32 Meg x 16, 16 Meg x 32 Mobile SDRAM Features Mobile SDRAM MT48H32M16LF – 8 Meg x 16 x 4 banks MT48H16M32LF/LG – 4 Meg x 32 x 4 banks For the latest data sheet, refer to Micron’s Web site: http://www.micron.com/mobile Features	Original	PDF	512Mb: MT48H32M16LF MT48H16M32LF/LG 09005aef81ca5de4/Source: 09005aef81ca5e03 MT48H32M16LF
marking cj4 Abstract: Mobile SDRAM smd marking cj4 MT48H16M32 Text: Preliminary‡ 512Mb: 32 Meg x 16, 16 Meg x 32 Mobile SDRAM Features Mobile SDRAM MT48H32M16LF – 8 Meg x 16 x 4 banks MT48H16M32LF/LG – 4 Meg x 32 x 4 banks For the latest data sheet, refer to Micron’s Web site: http://www.micron.com/mobile Features	Original	PDF	512Mb: MT48H32M16LF MT48H16M32LF/LG 09005aef81ca5de4/Source: 09005aef81ca5e03 MT48H32M16LF marking cj4 Mobile SDRAM smd marking cj4 MT48H16M32
MT48 Abstract: MT48H32M16LF MT48H16M32LFCM-75 Text: 512Mb: 32 Meg x 16, 16 Meg x 32 Mobile SDRAM Features Mobile SDRAM MT48H32M16LF – 8 Meg x 16 x 4 banks MT48H16M32LF/LG – 4 Meg x 32 x 4 banks Features Options • Fully synchronous; all signals registered on positive edge of system clock • VDD = 1.7–1.95V; VDDQ = 1.7–1.95V	Original	PDF	512Mb: MT48H32M16LF MT48H16M32LF/LG 09005aef81ca5de4/Source: 09005aef81ca5e03 MT48H32M16LF MT48 MT48H16M32LFCM-75
marking cj4 Abstract: No abstract text available Text: 512Mb: 32 Meg x 16, 16 Meg x 32 Mobile SDRAM Features Mobile SDRAM MT48H32M16LF – 8 Meg x 16 x 4 banks MT48H16M32LF/LG – 4 Meg x 32 x 4 banks For the latest data sheet, refer to Micron’s Web site: http://www.micron.com/mobile Features Options • Fully synchronous; all signals registered on positive	Original	PDF	512Mb: MT48H32M16LF MT48H16M32LF/LG 09005aef81ca5de4/Source: 09005aef81ca5e03 MT48H32M16LF marking cj4
MT48 Abstract: MT48H32M16LF MT48H16M32 Text: 512Mb: 32 Meg x 16, 16 Meg x 32 Mobile SDRAM Features Mobile SDRAM MT48H32M16LF – 8 Meg x 16 x 4 banks MT48H16M32LF/LG – 4 Meg x 32 x 4 banks Features Options • Endur-IC technology • Fully synchronous; all signals registered on positive edge of system clock	Original	PDF	512Mb: MT48H32M16LF MT48H16M32LF/LG 09005aef81ca5de4/Source: 09005aef81ca5e03 MT48H32M16LF MT48 MT48H16M32
smd marking cj4 Abstract: No abstract text available Text: 512Mb: 32 Meg x 16, 16 Meg x 32 Mobile SDRAM Features Mobile SDRAM MT48H32M16LF – 8 Meg x 16 x 4 banks MT48H16M32LF/LG – 4 Meg x 32 x 4 banks Features Options • Fully synchronous; all signals registered on positive edge of system clock • VDD = 1.7–1.95V; VDDQ = 1.7–1.95V	Original	PDF	512Mb: MT48H32M16LF MT48H16M32LF/LG 09005aef81ca5de4/Source: 09005aef81ca5e03 MT48H32M16LF smd marking cj4