lem lt 2000
Abstract: M66244FP
Text: PRELIMINARY DATA SHEET MITSUBISHI <DIGITAL ASSP> M66244FP June 1998 Ver.8.0.0 High Speed Monolithic Pulse Width Modulator NOTE:This is not final specification. Some parametric limits are subject to change DESCRIPTION The M66244FP is a high-speed digitally programmable pulse width modulator PWM which
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M66244FP
M66244FP
72MHz.
45MHz
72MHz
16bit)
11bit)
lem lt 2000
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Untitled
Abstract: No abstract text available
Text: Current Transducer LT 505-S IPN = 500 A For the electronic measurement of currents : DC, AC, pulsed., with a galvanic isolation between the primary circuit high power and the secondary circuit (electronic circuit). 0623 Electrical data IPN IP RM Primary nominal r.m.s. current
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505-S
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lem current lt 100
Abstract: LEM Components
Text: Current Transducer LT 4000-T IPN = 4000 A For the electronic measurement of currents : DC, AC, pulsed., with a galvanic isolation between the primary circuit high power and the secondary circuit (electronic circuit). Electrical data IPN IP RM Primary nominal r.m.s. current
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4000-T
lem current lt 100
LEM Components
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lem current lt 100
Abstract: lem lt 100 LEM LT 200-S Lem LT 200 Hall Effect Current Measurements 10000-S
Text: Current Transducer LT 10000-S IPN = 10000 A For the electronic measurement of currents : DC, AC, pulsed., with a galvanic isolation between the primary circuit high power and the secondary circuit (electronic circuit). Electrical data IPN IP RM Primary nominal r.m.s. current
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10000-S
lem current lt 100
lem lt 100
LEM LT 200-S
Lem LT 200
Hall Effect Current Measurements
10000-S
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lem current lt 100
Abstract: lem current lt 2005-s lem lt 2000 LEM LT 2005-s LEM Components SMPS IC 2005
Text: Current Transducer LT 2005-S IPN = 2000 A For the electronic measurement of currents : DC, AC, pulsed., with a galvanic isolation between the primary circuit high power and the secondary circuit (electronic circuit). Electrical data IPN IP RM Primary nominal r.m.s. current
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2005-S
lem current lt 100
lem current lt 2005-s
lem lt 2000
LEM LT 2005-s
LEM Components
SMPS IC 2005
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lem current lt 100
Abstract: LEM Components
Text: Current Transducer LT 4000-S IPN = 4000 A For the electronic measurement of currents : DC, AC, pulsed., with a galvanic isolation between the primary circuit high power and the secondary circuit (electronic circuit). Electrical data IPN IP RM Primary nominal r.m.s. current
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4000-S
lem current lt 100
LEM Components
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LEM Components
Abstract: No abstract text available
Text: Current Transducer LT 10000-S IPN = 10000 A For the electronic measurement of currents : DC, AC, pulsed., with a galvanic isolation between the primary circuit high power and the secondary circuit (electronic circuit). Electrical data IPN IP RM Primary nominal r.m.s. current
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10000-S
LEM Components
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LEM Components
Abstract: 1005-S Lem LT 1000
Text: Current Transducer LT 1005-S IPN = 1000 A For the electronic measurement of currents : DC, AC, pulsed., with a galvanic isolation between the primary circuit high power and the secondary circuit (electronic circuit). Electrical data IPN IP RM Primary nominal r.m.s. current
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1005-S
LEM Components
1005-S
Lem LT 1000
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Untitled
Abstract: No abstract text available
Text: Current Transducer LT 1005-S IPN = 1000 A For the electronic measurement of currents : DC, AC, pulsed., with a galvanic isolation between the primary circuit high power and the secondary circuit (electronic circuit). 0623 Electrical data IPN IP RM Primary nominal r.m.s. current
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1005-S
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LT 505-S
Abstract: LEM LT 505-s LEM Components TR 505 LT 405
Text: Current Transducer LT 505-S IPN = 500 A For the electronic measurement of currents : DC, AC, pulsed., with a galvanic isolation between the primary circuit high power and the secondary circuit (electronic circuit). Electrical data IPN IP RM Primary nominal r.m.s. current
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505-S
LT 505-S
LEM LT 505-s
LEM Components
TR 505
LT 405
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Untitled
Abstract: No abstract text available
Text: P R E U M tfM A R Y D A T A S H E E T M it s u b is h i < d ig it a l a s s p > M66244FP June 1998 Ver.8.0.0 High Speed M onolithic Pulse W idth Modulator NOTE:This is not final specification. Some parametric limits are subject to change DESCRIPTION The M66244FP is a high-speed digitally programmable pulse width modulator PWM which
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M66244FP
M66244FP
72MHz.
45MHz
72MHz
16bit)
D02b411
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lem lt 100 p
Abstract: lem current lt 100 lem module HEME 1000 lem heme current 1000 lem current LTA
Text: LEM CURRENT TRANSDUCERS Module LTA 100-PR Instantaneous and True RMS Outputs Definition - Principle The LEM type LTA 100-PR is a transducer employing the Hall effect to measure DC and complex waveform AC currents in a non invasive manner. Galvanic isolation is provided
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100-PR
100-PR
100PR
lem lt 100 p
lem current lt 100
lem module
HEME 1000
lem heme current 1000
lem current LTA
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MPY16HJ
Abstract: MPY-16HJ WTL1016 weitek 1516B MSP 3140 64 bit booth multiplier trw 1016 "Pin for Pin"
Text: .-I H y.- r ^L/rrL^ 7 IN N O V A T IO N S IN M I C R O S Y S T E M T E C H N O L O G Y 0 3b j ^ f A ' WTL 1516/1516A/1516B Features Description • 16 X 16 p arallel a rra y m ultip lier T h e W T L 1516/1516A/1516B are N M O S 16 X 16 p arallel arra y, m ultipliers characterized
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1516/1516A/1516B
1516B,
100ns
1516B
MPY16HJ
Am29516
MIL-STD-883
Diagr40
1258C
WTL151
MPY-16HJ
WTL1016
weitek
1516B
MSP 3140
64 bit booth multiplier
trw 1016
"Pin for Pin"
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2322 m
Abstract: Lem LT 300 - t lem lt 100 p
Text: M odel PP- 17 Modular C o n tro l P otentio m eter SPECIFICATIONS Carbon Composition Element Cermet Element Electrical Resistance Range Linear 220 i i to 2.2 M il 220 i l to 2.2 M i N on Linear 2.2 KJ1 to 470 K ii N ot Applicable Resistance Tolerance ± 20% Standard
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10nvn
100nmi
ft88j)
2322 m
Lem LT 300 - t
lem lt 100 p
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LT8900
Abstract: itt 2222a LT89000 2203a ses cree 3535 PS-303 AD clt850 LT8600 2168A LT8500
Text: Æ | M IT - L I f 1 w II CLA80000 SERIES I Km*Ink HIGH DENSITY CMOS GATE ARRAYS SEMICONDUCTOR DS3820-2.1 July 1997 INTRODUCTION ARRAY SIZES T he C L A 8 0 k gate array se rie s from M itel S e m ico n d u cto r offers advan ta ge s in spe ed and d e n sity over previous array
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CLA80000
DS3820-2
rra635
MLA85
MLA87
MLT88
MLT89
GA84-ACA-2828
PGA100-ACA-3434
PGA120-ACA-3434
LT8900
itt 2222a
LT89000
2203a ses
cree 3535
PS-303 AD
clt850
LT8600
2168A
LT8500
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Lem LT 300 - t
Abstract: No abstract text available
Text: ANALOG DEVICES FEATURES 60 MHz Pulse Rate 8-Bit Resolution Center, Left or Right Justify Low Power: 700 m W typical M inim um Pulse W idth: <5 ns M axim um PW: 100 % Full-scale Pulse Width Modulator AD9561 FUNCTIONAL BLOCK DIAGRAM APPLICATIONS Laser Printers
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AD9561
AD9561
AD9561/PCB
28-Lead
Lem LT 300 - t
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Untitled
Abstract: No abstract text available
Text: Die angegebenen Verpackungseinheiten VE gelten als Mindestabnahmemenge bei Lieferung ab Werk. The package units (VE) being stated are automatically the lowest possible quantities being available ex works. Les livraisons d’usines ne peuvent être inférieures aux unités d ’emballage
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5bl5235
DD01134
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ssi 202
Abstract: HER301 HER308 Z03E
Text: E HER301 -HER308 TAIWAN SEMICONDUC tà RoHS CO M PLIANCE 3.0 AMPS. High Efficient Rectifiers DQ.-2Q1AD .220 lÿ.lil .TTiTFiïï Dia. 1.0 2S.4 MIN. Features v •fr <> v v High efficie ncy. Low VF High current caps bilily High reliability High surgu currunl capability
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HER301
-HER308
157PF
MIL-STD-202.
ssi 202
HER308
Z03E
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Untitled
Abstract: No abstract text available
Text: Die angegebenen Verpackungseinheiten VE gelten als Mindestabnahmemenge bei Lieferung ab Werk. 51 lumberg The package units (VE) being stated are automatically the lowest possible quantities being available ex works. Les livraisons d ’usines ne peuvent être inférieures aux unités d ’emballage
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4-26polig,
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SM5808
Abstract: tsx micro
Text: rupe SMS SOS 8 x 8 bit Multipliei— Accumulator NIPPON PRECISION CIRCUITS LTD. • General Th e SM5808 i s a h ig h s p e e d 8 x 8 b i t p a r a l l e l m u lt i p i i e r - a c c u m u l a t o r w h ic h o p e r a t e s a t 4 5 n S c y c l e t im e 22MHz m u l t i p i y - a c c u m u l a t e r a t e .
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SM5808
SM5808
22MHz
D3230E0
tsx micro
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draloric Potentiometer
Abstract: vishay draloric Potentiometer
Text: Trimmwiderstand, wasserdicht E 13. 63. bOE m Trimm potentiometer, waterproof Keramik/Cermet Ceramic/Cermet Keramik/Kohle Ceramic/Carbon «IDDnMb 0QGD133 Elektrische Oaten ßS7 VISHAY/DRALORIC Electrical data Typ Style E13KS E13C S W id e rs tan d s s ch ic h t
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0QGD133
E13KS
015-R
E13KS1
draloric Potentiometer
vishay draloric Potentiometer
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2N6218
Abstract: 2N6115 2N6114 GES621I Voltaire unijunction
Text: Silicon Complementary Unijunction Transistor 2 N 6 2 1 8 -2 4 SEE G ES621I*2 COMPLEMENTARY UNIJUNCTION T he G eneral E le c tr ic C om p lem en tary U n iju n ctio n T ra n sisto r is a silicon planar, m on olith ic in teg ra ted circu it. It h as u n iju n ction c h a r a c te r istic s w ith
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2N6218-24
GES621I
2N6218
2N6115
2N6114
GES621I
Voltaire
unijunction
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T2515
Abstract: T17N
Text: EUPEC SSE D 3M032T7 0000LS3 5ST » U P E C ' T17N 'T 1 2 £ > ~ & Typenreihe/Type range T 17 N Elektrische Eigenschaften Electrical properties H ochstzulässige W erte V d rm , V r r m 400 60 0 900 800 1000 1100 1200 M axim um perm issible values P eriodische V orw ärts- und
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QQ00bS3
T2515
T17N
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Lem LT 300 - t
Abstract: NDL5200 L5104
Text: N E C h2E D ELECTRONICS INC • b427525 0030074 22T M N E C E PRELIMINARY DATA SHEET NEC PHOTO DIODE NDL5103P, NDL5103P1 ELECTRON DEVICE 1 300 nm OPTICAL FIBER COM M UNICATIONS <t>50 G ERM AN IU M A V A LA N CH E PHOTO DIODE M O DULE DESCRIPTION NDL5103P and NDL5103P1 are Germanium Avalanche Photo Diodes with optical fiber, especially designed for detectors of
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b427525
NDL5103P,
NDL5103P1
NDL5103P
NDL5103P1
NDL5103P
NDL51Q3P1
NDL5100C
NDL5104P1
NDL5102
Lem LT 300 - t
NDL5200
L5104
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