Untitled
Abstract: No abstract text available
Text: AUTOMOTIVE CURRENT TRANSDUCER HC6F700-S 18198102215 Page 1/5 080401/2 LEM reserves the right to carry out modifications on its transducers, in order to improve them, without prior notice. www .lem.com HC6F700-S Introduction Principle of HC6F Family The HC6F Family is for use on the electronic measurement of
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HC6F700-S
JESD22-A114-B
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Untitled
Abstract: No abstract text available
Text: AUTOMOTIVE CURRENT TRANSDUCER HC6H700-S 18198151434 Page 1/ 5 080402/4 LEM reserves the right to carry out modifications on its transducers, in order to improve them, without prior notice. www .lem.com HC6H700-S Introduction Principle of HC6H Family The HC6H Family is for use on the electronic measurement of
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HC6H700-S
JESD22-A114-B
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pulse 01940
Abstract: 2SC4959 lem 714
Text: PRELIMINARY DATA SHEET SILICON TRANSISTOR µPA806T MICROWAVE LOW NOISE AMPLIFIER NPN SILICON EPITAXIAL TRANSISTOR WITH BUILT-IN 2 ELEMENTS MINI MOLD FEATURES PACKAGE DRAWINGS • Low Noise, High Gain (Unit: mm) • Operable at Low Voltage 2.1±0.1 • Small Feed-back Capacitance
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PA806T
PA806T-T1
pulse 01940
2SC4959
lem 714
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pin IC 7479
Abstract: NE685 S21E UPA826TF UPA826TF-T1 pt 6964
Text: PRELIMINARY DATA SHEET NPN SILICON EPITAXIAL TWIN TRANSISTOR FEATURES • • • • UPA826TF OUTLINE DIMENSIONS Units in mm LOW NOISE AND HIGH GAIN OPERABLE AT LOW VOLTAGE SMALL FEEDBACK CAPACITANCE: Cre = 0.4 pF TYP SMALL PACKAGE STYLE: 2 NE685 die in a 2 mm x 1.25 mm x 0.6 mm package
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UPA826TF
NE685
UPA826TF
UPA826TF-T1
24-Hour
pin IC 7479
S21E
UPA826TF-T1
pt 6964
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lem 55.2
Abstract: 26960 2SC4959
Text: To our customers, Old Company Name in Catalogs and Other Documents On April 1st, 2010, NEC Electronics Corporation merged with Renesas Technology Corporation, and Renesas Electronics Corporation took over all the business of both companies. Therefore, although the old company name remains in this document, it is a valid
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2SC4570
Abstract: xy 801 ic
Text: PRELIMINARY DATA SHEET SILICON TRANSISTOR µPA813T NPN SILICON EPITAXIAL TRANSISTOR WITH BUILT-IN 2 x 2SC4570 SMALL MINI MOLD µPA813T has built-in 2 transistors which were developed for UHF. PACKAGE DRAWINGS (Unit: mm) FEATURES 2.1±0.1 • High fT 1.25±0.1
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PA813T
2SC4570)
PA813T
PA813T-T1
2SC4570
xy 801 ic
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ic 7483 pin configuration
Abstract: T 427 transistor TYP 513 309 2SC4570 ts 1683 nec 5261
Text: PRELIMINARY DATA SHEET SILICON TRANSISTOR µPA803T NPN SILICON EPITAXIAL TRANSISTOR WITH BUILT-IN 2 ELEMENTS MINI MOLD µPA803T has built-in 2 transistors which were developed for UHF. PACKAGE DRAWINGS (Unit: mm) FEATURES 2.1±0.1 • High fT 1.25±0.1 6
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PA803T
PA803T
PA803T-T1
2SC4570)
ic 7483 pin configuration
T 427 transistor
TYP 513 309
2SC4570
ts 1683
nec 5261
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pt 8726 transistor
Abstract: PA809T Nec 4558 c 743 LEM KB 7780 2SC5193
Text: PRELIMINARY DATA SHEET SILICON TRANSISTOR µPA809T MICROWAVE LOW NOISE AMPLIFIER NPN SILICON EPITAXIAL TRANSISTOR WITH BUILT-IN 2 ELEMENTS MINI MOLD FEATURES PACKAGE DRAWINGS • Low Voltage Operation, Low Phase Distortion (Unit: mm) • Low Noise 2.1±0.1
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PA809T
PA809T-T1
2SC5193)
pt 8726 transistor
PA809T
Nec 4558 c
743 LEM
KB 7780
2SC5193
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lem 55.2
Abstract: UPA814T 795-29-9 2SC5193 3699 npn NEC 2506 741 LEM
Text: PRELIMINARY DATA SHEET SILICON TRANSISTOR µPA814T MICROWAVE LOW NOISE AMPLIFIER NPN SILICON EPITAXIAL TRANSISTOR WITH BUILT-IN 2 x 2SC5193 SMALL MINI MOLD FEATURES PACKAGE DRAWINGS (Unit: mm) • Low Voltage Operation, Low Phase Distortion • Low Noise
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PA814T
2SC5193)
PA814T-T1
lem 55.2
UPA814T
795-29-9
2SC5193
3699 npn
NEC 2506
741 LEM
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D1880
Abstract: transistor D1880 d2646 D4205 D4144 d1839 D1880 Transistor D5149 D1294 D2243
Text: PRELIMINARY DATA SHEET SILICON TRANSISTOR PPA826TF HIGH-FREQUENCY LOW-NOISE AMPLIFIER NPN SILICON EPITAXIAL TWIN TRANSISTOR WITH BUILT-IN 6-PIN 2 u 2SC4959 THIN -TYPE SMALL MINI MOLD PACKAGE DRAWINGS (Unit: mm) FEATURES • Low noise and high gain 2.10±0.1
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PPA826TF
2SC4959)
D1880
transistor D1880
d2646
D4205
D4144
d1839
D1880 Transistor
D5149
D1294
D2243
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651 lem
Abstract: FU65SDF3
Text: • bSM'ìflET 001 f l 330 O flO ■ MITSUBISHI O P T IC A L D E V IC E S FU-65SDF-38M1 1.55 \im DFB-LD MODULE WITH SIN G LEM O DE FIBER PIGTAIL (CATV) DESCRIPTION FEATURES M odule typ e FU -45SDF-38M 1 has been developed • Distributed Feedback (DFB) Laser diode
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FU-65SDF-38M1
-45SDF-38M
651 lem
FU65SDF3
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7360 tube
Abstract: Y8963 yagi vhf yagi uhf Y896 YS43012 Y1363 Y4503
Text: DIRECTIONAL Y Be sure to take a close look! This is undoubtedly the finest de signed and fully featured gamma match Yagi in the industry. The fully welded ANTENEX Yagi antenna features full 360-degree welds around each element to boom joint and they are fully gold
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360-degree
LMR400,
LMR400
7360 tube
Y8963
yagi vhf
yagi uhf
Y896
YS43012
Y1363
Y4503
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ews50-12
Abstract: EWS50-15 EWS50-5 EWS50-18 EWS50-24 EWS50-6 EWS50-9
Text: DENSEI-LAMBDA EW S50 SPEC IFIC A TIO N S PA707-01-01 E - - - - - _ MODEL EW S50-5 ITEMS EW S50-6 EWS50-9 EW S50-12 EW S50-15 EWS50-18 EW S50-24 EWS5D-2B EWSS0-46 ~ t Nominal O utput Voltage V 5 6 9 12 15 18 24 28 48 2 Maximum Output Current A 10 8.4 5 6 44
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EWS50
PA707-01-01
EWS50-5
EWS50-6
EWS50-9
EWS50-12
EWS50-15
EWS50-18
EWS50-24
265VAC
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YDA4702
Abstract: YDA4704 yda 1364 ymst18 YDA1362
Text: DIPOLE ARRAY A Don’t let the price of our YDA Dipole antenna mislead you. This is a serious antenna with high class features, such as full golda n o d iza tio n, fully w elded elem ents, and chrom e p la te d brass “N ” connector. Our two and four bay dipole antenna array
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6061-T6
PL259)
YDA1502
YDA4702
YDA4704
yda 1364
ymst18
YDA1362
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CGY887A
Abstract: DIN45004B
Text: P hilips S em ico n d uctors P relim inary specification CATV amplifier module CGY887A FEA TU R E S P IN N IN G -S O T 1 1 5 J • High gain D ES C R IPTIO N input 2 com m on • R ugged construction 3 com m on • Gold m etallization e nsures excellent reliability.
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CGY887A
OT115J
-SOT115J
MSA319
CGY887A
DIN45004B
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BGY585A
Abstract: DIN45004B
Text: P hilips S em ico n d uctors Product sp ecification CATV amplifier module FEA TUR ES BGY585A P IN N IN G - SO T115J • E xcellent linearity PIN D E S C R IP T IO N • E xtrem ely low noise 1 input • S ilicon nitride passivation 2 com m on • R ugged construction
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BGY585A
OT115J
BGY585A
DIN45004B
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Untitled
Abstract: No abstract text available
Text: N AUER PHILIPS/DISCRETE bRE » - bbS3R31 0033524 b42 - A P X Philips Semiconductors Product specification CATV amplifier module FEATURES • Excellent linearity • Extremely low noise • Silicon nitride passivation • Rugged construction • Gold metallization ensures
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bbS3R31
BGD702
OT115J2
NECC-C-005
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Untitled
Abstract: No abstract text available
Text: DISCRETE SEMICONDUCTORS BGD902L CATV amplifier module Preliminary specification Philips Semiconductors 1999 Mar 26 PHILIPS PHILIPS Philips Semiconductors Preliminary specification CATV amplifier module BGD902L FEATURES PINNING-SOT115J • E xcellent linearity
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BGD902L
BGD902L
PINNING-SOT115J
SCA63
125008/00/01/pp8
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Untitled
Abstract: No abstract text available
Text: DISCRETE SEMICONDUCTORS BITÂ S y i I T BGY588N CATV amplifier module Product specification Supersedes data of 1999 Jan 01 Philips Sem iconductors 1999 Mar 29 PHILIPS Philips Semiconductors Product specification CATV amplifier module BGY588N FEATURES PINNING-SOT115J
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BGY588N
PINNING-SOT115J
T115J
125008/00/02/pp8
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Untitled
Abstract: No abstract text available
Text: DISC RETE S E M IC O N D U C TO R S [n]EE¥ BGY82 CATV amplifier module 1998 Mar 02 Product specification Supersedes data of 1997 Apr 15 File under Discrete Semiconductors, SC16 Philips Semiconductors PHILIPS PHILIPS Philips Sem iconductors Product specification
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BGY82
OT115J
125106/00/03/pp8
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Untitled
Abstract: No abstract text available
Text: DISC RETE S E M IC O N D U C TO R S ATA S&flEET BGD902 CATV amplifier module 1998 M ar 12 P relim inary specification File under D iscrete S em iconductors, SC16 Philips Semiconductors PHILIPS PHILIPS Philips S e m ico nd uctors Prelim inary specification
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BGD902
OT115J
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Untitled
Abstract: No abstract text available
Text: DISC RETE S E M IC O N D U C TO R S ATA S&flEET BGD508 CATV amplifier module 1998 Mar 16 Product specification Supersedes data of 1995 Nov 14 File under Discrete Semiconductors, SC16 Philips Semiconductors PHILIPS PHILIPS Ph il ips S e m i c o nd u c t o r s
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BGD508
OT115J
125106/00/04/pp8
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Untitled
Abstract: No abstract text available
Text: DISC RETE S E M IC O N D U C TO R S ATA S&flEET BGY685A CATV amplifier module 1998 Mar 16 Product specification Supersedes data of 1997 Apr 21 File under Discrete Semiconductors, SC16 Philips Semiconductors PHILIPS PHILIPS Philips S e m i c o n d u c t o r s
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BGY685A
OT115J
125106/00/04/pp8
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CT 1975 sam
Abstract: transistor NEC D 588 NEC 2561 LE 401 zo 607 p 408 NEC 2561 de nec 2561 Q 634 date sheet ic 7483 C4570 CT 1975 - sam T72 marking
Text: DATA SHEET SILICON TRANSISTOR 2SC4570 NPN SILICON EPITAXIAL TRANSISTOR SUPER MINI MOLD DESCRIPTION T h e 2S C 4 5 7 0 is a low su p p ly vo lta g e tra n sisto r de sig n e d for UHF PACKAGE DIMENSIONS Units: mm O S C /M IX . 2.1 ±0.1 It is su ita b le fo r a high d e n sity surface m ount asse m bly sin ce the
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2SC4570
2SC4570-T1
CT 1975 sam
transistor NEC D 588
NEC 2561 LE 401
zo 607 p 408
NEC 2561 de
nec 2561 Q 634
date sheet ic 7483
C4570
CT 1975 - sam
T72 marking
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