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    NEC uPA 437

    Abstract: f J 6820
    Text: PRELIMINARY DATA SHEET SILICON TRANSISTOR ¿¿PA809T MICROWAVE LOW NOISE AMPLIFIER NPN SILICON EPITAXIALTRANSISTOR WITH BUILT-IN 2 ELEMENTS M INI MOLD FEATURES PACKAGE DRAWINGS • Low Voltage O peration, Low Phase D istortion • Low Noise NF = 1.5 dB TYP.


    OCR Scan     		PDF uPA809T 2SC5193) NEC uPA 437 f J 6820

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    Abstract: No abstract text available
    Text: PRELIMINARY DATA SHEET SILICON TRANSISTOR PA809T MICROWAVE LOW NOISE AM PURER NPN SILICON EPITAXIALTRANSISTOR WITH BUILT-IN 2 ELEMENTS M INI MOLD FEATU RES PACKAGE DRAW INGS • Low V o lta g e O p e ra tio n , Low Phase D is to rtio n • Low N oise (U n it: m m )


    OCR Scan     		PDF uPA809T 2SC5193)