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    LDMOS 3G Search Results

    LDMOS 3G Result Highlights (5)

    Part ECAD Model Manufacturer Description Download Buy
    BLA1011-2 Rochester Electronics LLC BLA1011-2 - N-Channel LDMOS Avionics LDMOS Transistor (Ampleon Die) Visit Rochester Electronics LLC Buy
    BLA1011-10 Rochester Electronics LLC BLA1011-10 - N-Channel LDMOS Avionics LDMOS Transistor (Ampleon Die) Visit Rochester Electronics LLC Buy
    BLA0912-250 Rochester Electronics LLC BLA0912-250 - N-Channel LDMOS Avionics LDMOS Transistor (Ampleon Die) Visit Rochester Electronics LLC Buy
    BLF1043 Rochester Electronics LLC BLF1043 - UHF10W Power LDMOS Transistor (Ampleon Die) Visit Rochester Electronics LLC Buy
    BLF1046 Rochester Electronics LLC BLF1046 - UHF Power LDMOS Transistor (Ampleon Die) Visit Rochester Electronics LLC Buy

    LDMOS 3G Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    HP RF TRANSISTOR GUIDE

    Abstract: MRF286 MRF210305 MHL9838 mrf284 Curtice linear amplifier 470-860 Base Station Drivers motorola MRF High frequency MRF transistor
    Text: SG384/D REV 7 RF LDMOS Infrastructure Technology Selector Guide Motorola RF LDMOS Product Family As digital standards increasingly dominate the wireless communication market, Motorola’s RF LDMOS technology has become the industry’s technology of choice due to its superior linearity, gain and efficiency characteristics. Motorola’s RF LDMOS


    Original     		PDF SG384/D HP RF TRANSISTOR GUIDE MRF286 MRF210305 MHL9838 mrf284 Curtice linear amplifier 470-860 Base Station Drivers motorola MRF High frequency MRF transistor

    BLF4G22-45

    Abstract: BLF4G10-120 BLF4G22-100 BLF4G22-130 digital predistortion dpd 2carrier WCDMA
    Text: High efficiency LDMOS 4th Generation LDMOS boosts fuels 3G basestations performance of W-CDMA amplifiers To support high efficiency requirements of basestation power amplifiers, Philips 0.6 µm 4th generation LDMOS technology is a significant step forward compared to earlier 0.8 µm technologies, with a 50% higher


    Original     		PDF

    C801

    Abstract: 1/db3 c801
    Text: PTFA220121M Confidential, Limited Internal Distribution High Power RF LDMOS Field Effect Transistor 12 W, 700 – 2200 MHz Description The PTFA220121M is an unmatched 12-watt LDMOS FET intended for power ampliier applications in the 700 to 2200 MHz. This LDMOS


    Original     		PDF PTFA220121M PTFA220121M 12-watt PG-SON-10 C801 1/db3 c801

    TRANSISTOR C802

    Abstract: TL2262 c102 TRANSISTOR C102 M transistor atc100a c103 m TRANSISTOR c103 TRANSISTOR ATC100A100JW150X smd transistor bd 37 TRANSISTOR c104
    Text: PTFA220121M Confidential, Limited Internal Distribution High Power RF LDMOS Field Effect Transistor 12 W, 700 – 2200 MHz Description The PTFA220121M is an unmatched 12-watt LDMOS FET intended for power amplifier applications in the 700 to 2200 MHz. This LDMOS


    Original     		PDF PTFA220121M PTFA220121M 12-watt PG-SON-10 TRANSISTOR C802 TL2262 c102 TRANSISTOR C102 M transistor atc100a c103 m TRANSISTOR c103 TRANSISTOR ATC100A100JW150X smd transistor bd 37 TRANSISTOR c104

    800w rf power amplifier circuit diagram

    Abstract: MRF6VP11KH 1000w power amplifier circuit diagram 200W PUSH-PULL 1000w power AMPLIFIER pcb circuit amplifier circuit diagram class D 1000w 500w FM power amplifier circuit diagram MRFE6VP6300H RF Amplifier 500w 175 mhz 1000w class d circuit diagram schematics
    Text: White Paper 50V RF LDMOS An ideal RF Power technology for ISM, broadcast and commercial aerospace applications Freescale Semiconductor www.freescale.com/rfpower I. INTRODUCTION RF LDMOS RF Laterally Diffused MOS , hereafter referred to as LDMOS, is the dominant device technology used in


    Original     		PDF 1990s. 2010are 50VRFLDMOSWP 800w rf power amplifier circuit diagram MRF6VP11KH 1000w power amplifier circuit diagram 200W PUSH-PULL 1000w power AMPLIFIER pcb circuit amplifier circuit diagram class D 1000w 500w FM power amplifier circuit diagram MRFE6VP6300H RF Amplifier 500w 175 mhz 1000w class d circuit diagram schematics

    c102 TRANSISTOR

    Abstract: PTFA220121M NFM18PS105R0J3 tl111 TRANSISTOR C802 TL204 TL231 c801 TL-205A tl113
    Text: PTFA220121M Confidential, Limited Internal Distribution High Power RF LDMOS Field Effect Transistor 12 W, 700 – 2200 MHz Description The PTFA220121M is an unmatched 12-watt LDMOS FET intended for power amplifier applications in the 700 to 2200 MHz. This LDMOS


    Original     		PDF PTFA220121M PTFA220121M 12-watt PG-SON-10 c102 TRANSISTOR NFM18PS105R0J3 tl111 TRANSISTOR C802 TL204 TL231 c801 TL-205A tl113

    TRANSISTOR C802

    Abstract: PTFA220121M LM7805 c SMD V4 MARKING p 4712 transistor c803 atc100a200jw
    Text: PTFA220121M Confidential, Limited Internal Distribution High Power RF LDMOS Field Effect Transistor 12 W, 700 – 2200 MHz Description The PTFA220121M is an unmatched 12-watt LDMOS FET intended for power amplifier applications in the 700 to 2200 MHz. This LDMOS


    Original     		PDF PTFA220121M PTFA220121M 12-watt PG-SON-10 TRANSISTOR C802 LM7805 c SMD V4 MARKING p 4712 transistor c803 atc100a200jw

    TL225

    Abstract: ATC100A6R2CW150X
    Text: PTFA220121M Confidential, Limited Internal Distribution High Power RF LDMOS Field Effect Transistor 12 W, 28 V, 700 – 2200 MHz Description The PTFA220121M is an unmatched 12-watt LDMOS FET intended for power amplifier applications in the 700 to 2200 MHz. This LDMOS


    Original     		PDF PTFA220121M PTFA220121M 12-watt PG-SON-10 TL225 ATC100A6R2CW150X

    SMD r801

    Abstract: TL217 TL218 TL2082 TRANSISTOR c801 c803 R804 3224W-202ECT-ND transistor c803 TL223
    Text: PTFA220041M Confidential, Limited Internal Distribution High Power RF LDMOS Field Effect Transistor 4 W, 700 – 2200 MHz Description The PTFA220041M is an unmatched 4-watt LDMOS FET intended for power amplifier applications in the 700 MHz to 2200 MHz operating range. This LDMOS device offers excellent gain,


    Original     		PDF PTFA220041M PTFA220041M SMD r801 TL217 TL218 TL2082 TRANSISTOR c801 c803 R804 3224W-202ECT-ND transistor c803 TL223

    c102 TRANSISTOR

    Abstract: tl113 c103 TRANSISTOR TRANSISTOR c104 NFM18PS105R0J3 c103 TRANSISTOR equivalent c104 TRANSISTOR PTFA220041M TL108 tl111
    Text: PTFA220041M Confidential, Limited Internal Distribution High Power RF LDMOS Field Effect Transistor 4 W, 700 – 2200 MHz Description The PTFA220041M is an unmatched 4-watt LDMOS FET intended for power amplifier applications in the 700 MHz to 2200 MHz operating range. This LDMOS device offers excellent gain, efficiency


    Original     		PDF PTFA220041M PTFA220041M c102 TRANSISTOR tl113 c103 TRANSISTOR TRANSISTOR c104 NFM18PS105R0J3 c103 TRANSISTOR equivalent c104 TRANSISTOR TL108 tl111

    Untitled

    Abstract: No abstract text available
    Text: PTFA220041M Confidential, Limited Internal Distribution High Power RF LDMOS Field Effect Transistor 4 W, 700 – 2200 MHz Description The PTFA220041M is an unmatched 4-watt LDMOS FET intended for power ampliier applications in the 700 MHz to 2200 MHz operating range. This LDMOS device offers excellent gain,


    Original     		PDF PTFA220041M PTFA220041M PG-SON-10

    mar-08 transistor

    Abstract: BLF2022-125
    Text: DISCRETE SEMICONDUCTORS DATA SHEET M3D792 BLF2022-125 UHF power LDMOS transistor Preliminary Specification 2002 Mar 08 Philips Semiconductors Preliminary Specification UHF power LDMOS transistor BLF2022-125 PINNING FEATURES • 100 % tested under single carrier 3GPP W-CDMA


    Original     		PDF M3D792 BLF2022-125 OT634 SCA73 125104/00/04/pp7 mar-08 transistor BLF2022-125

    c102 TRANSISTOR

    Abstract: LM7805 M SMD R804 c103 TRANSISTOR transistor c107 m TRANSISTOR c801 NFM18PS105R0J3 TRANSISTOR c104 TL217 PTFA220041M
    Text: PTFA220041M Confidential, Limited Internal Distribution High Power RF LDMOS Field Effect Transistor 4 W, 700 – 2200 MHz Description The PTFA220041M is an unmatched 4-watt LDMOS FET intended for power amplifier applications in the 700 MHz to 2200 MHz operating range. This LDMOS device offers excellent gain, efficiency


    Original     		PDF PTFA220041M PTFA220041M PG-SON-10 c102 TRANSISTOR LM7805 M SMD R804 c103 TRANSISTOR transistor c107 m TRANSISTOR c801 NFM18PS105R0J3 TRANSISTOR c104 TL217

    transistor c735

    Abstract: ATC100A120FW150XB TRANSISTOR c104 TL107 c103 m TRANSISTOR c103 TRANSISTOR TRANSISTOR C802 C735 transistor TRANSISTOR C107 TRANSISTOR C103
    Text: PTFA220041M Confidential, Limited Internal Distribution High Power RF LDMOS Field Effect Transistor 4 W, 700 – 2200 MHz Description The PTFA220041M is an unmatched 4-watt LDMOS FET intended for power amplifier applications in the 700 MHz to 2200 MHz operating range. This LDMOS device offers excellent gain, efficiency


    Original     		PDF PTFA220041M PTFA220041M PG-SON-10 transistor c735 ATC100A120FW150XB TRANSISTOR c104 TL107 c103 m TRANSISTOR c103 TRANSISTOR TRANSISTOR C802 C735 transistor TRANSISTOR C107 TRANSISTOR C103

    BLF2022-70

    Abstract: BLF2047 ACPR10
    Text: DISCRETE SEMICONDUCTORS DATA SHEET book, halfpage M3D379 BLF2022-70 UHF power LDMOS transistor Preliminary specification 2000 Sep 21 Philips Semiconductors Preliminary specification UHF power LDMOS transistor BLF2022-70 PINNING FEATURES • High power gain


    Original     		PDF M3D379 BLF2022-70 125002/04/pp10 BLF2022-70 BLF2047 ACPR10

    Untitled

    Abstract: No abstract text available
    Text: PTMA210452EL PTMA210452FL Confidential, Limited Internal Distribution Wideband RF LDMOS Integrated Power Amplifier 45 W, 1900 – 2200 MHz Description The PTMA210452FL and PTMA210452FL are wideband, 45-watt, 2-stage, LDMOS integrated amplifiers intended for use


    Original     		PDF PTMA210452EL PTMA210452FL PTMA210452FL 45-watt, H-34265-8 H-33265-8 P07-A,

    Capacitor Tantal SMD

    Abstract: BLF2022-30 BP317
    Text: DISCRETE SEMICONDUCTORS DATA SHEET M3D750 BLF2022-30 UHF power LDMOS transistor Preliminary specification 2001 Aug 07 Philips Semiconductors Preliminary specification UHF power LDMOS transistor BLF2022-30 PINNING FEATURES • High power gain PIN DESCRIPTION


    Original     		PDF M3D750 BLF2022-30 125002/02/pp10 Capacitor Tantal SMD BLF2022-30 BP317

    Untitled

    Abstract: No abstract text available
    Text: PTFA190451E PTFA190451F Confidential, Limited Internal Distribution Thermally-Enhanced High Power RF LDMOS FETs 45 W, 1930 – 1990 MHz Description The PTFA190451E and PTFA190451F are thermally-enhanced, 45-watt, internally matched LDMOS FETs designed for WCDMA,


    Original     		PDF PTFA190451E PTFA190451F PTFA190451E PTFA190451F 45-watt, H-36265-2 H-37265-2

    smd L19

    Abstract: MGU538
    Text: DISCRETE SEMICONDUCTORS DATA SHEET book, halfpage M3D379 BLF2022-90 UHF power LDMOS transistor Product specification Supersedes data of 2001 Mar 22 2002 Sep 09 Philips Semiconductors Product specification UHF power LDMOS transistor BLF2022-90 PINNING - SOT502A


    Original     		PDF M3D379 BLF2022-90 BLF2022-90 OT502A MBK394 SCA74 613524/02/pp12 smd L19 MGU538

    4S2/4330

    Abstract: smd capacitor philips 37281 4S2/4330 030 36301 CAP tantal SMD 4330 030 36 ferroxcube CHIP TANTAL CAP Philips 2222 capacitor BLF2022-70
    Text: DISCRETE SEMICONDUCTORS DATA SHEET book, halfpage M3D379 BLF2022-70 UHF power LDMOS transistor Product specification Supersedes data of 2000 Oct 04 2001 Nov 27 Philips Semiconductors Product specification UHF power LDMOS transistor BLF2022-70 FEATURES PINNING


    Original     		PDF M3D379 BLF2022-70 SCA73 613524/02/pp12 4S2/4330 smd capacitor philips 37281 4S2/4330 030 36301 CAP tantal SMD 4330 030 36 ferroxcube CHIP TANTAL CAP Philips 2222 capacitor BLF2022-70

    ne554

    Abstract: NE55410GR NE55410GR-T3-AZ TL12 TL13 TL15
    Text: LDMOS FIELD EFFECT TRANSISTOR NE55410GR N-CHANNEL SILICON POWER LDMOS FET FOR 2 W + 10 W VHF to L-BAND SINGLE-END POWER AMPLIFIER DESCRIPTION The NE55410GR is an N-channel enhancement-mode LDMOS FET designed for driver 0.1 to 2.6 GHz PA, such as, cellular base station amplifier, analog/digital TV-transmitters, and the other PA’s. This product has two different


    Original     		PDF NE55410GR NE55410GR ne554 NE55410GR-T3-AZ TL12 TL13 TL15

    Untitled

    Abstract: No abstract text available
    Text: LDMOS FIELD EFFECT TRANSISTOR NE55410GR N-CHANNEL SILICON POWER LDMOS FET FOR 2 W + 10 W VHF to L-BAND SINGLE-END POWER AMPLIFIER DESCRIPTION The NE55410GR is an N-channel enhancement-mode LDMOS FET designed for driver 0.1 to 2.6 GHz PA, such as, cellular base station amplifier, analog/digital TV-transmitters, and the other PA’s. This product has two different


    Original     		PDF NE55410GR NE55410GR PU10542EJ02V0DS IR260 WS260 HS350

    Power UHF amplifiers 432 MHz

    Abstract: Transistor 1308 transistor 1334 SOT634A BLF2022-125
    Text: DISCRETE SEMICONDUCTORS DATA SHEET M3D792 BLF2022-125 UHF power LDMOS transistor Objective specification Supersedes data of 2002 April 02 2003 Mar 07 Philips Semiconductors Objective specification UHF power LDMOS transistor BLF2022-125 PINNING - SOT634A FEATURES


    Original     		PDF M3D792 BLF2022-125 OT634A SCA75 613524/03/pp8 Power UHF amplifiers 432 MHz Transistor 1308 transistor 1334 SOT634A BLF2022-125

    BLF2022-90

    Abstract: BLF2022S-90 MBL105
    Text: DISCRETE SEMICONDUCTORS DATA SHEET M3D379 M3D461 BLF2022-90; BLF2022S-90 UHF power LDMOS transistor Product specification Supersedes data of 2003 Feb 24 2003 Jun 13 Philips Semiconductors Product specification UHF power LDMOS transistor BLF2022-90; BLF2022S-90


    Original     		PDF M3D379 M3D461 BLF2022-90; BLF2022S-90 SCA75 613524/04/pp12 BLF2022-90 BLF2022S-90 MBL105