IRL5Y7413CM
Abstract: No abstract text available
Text: PD - 94164A HEXFET POWER MOSFET THRU-HOLE TO-257AA IRL5Y7413CM 30V, N-CHANNEL Product Summary Part Number BVDSS IRL5Y7413CM 30V RDS(on) 0.025Ω ID 18A* Fifth Generation HEXFET® power MOSFETs from International Rectifier utilize advanced processing techniques to achieve the lowest possible on-resistance
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4164A
O-257AA)
IRL5Y7413CM
O-257AA
IRL5Y7413CM
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Untitled
Abstract: No abstract text available
Text: PD - 94164 HEXFET POWER MOSFET THRU-HOLE TO-257AA IRL5Y7413CM 30V, N-CHANNEL Product Summary Part Number BVDSS IRL5Y7413CM 30V RDS(on) 0.022Ω ID 18A* Fifth Generation HEXFET® power MOSFETs from International Rectifier utilize advanced processing techniques to achieve the lowest possible on-resistance
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O-257AA)
IRL5Y7413CM
O-257AA
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Untitled
Abstract: No abstract text available
Text: PD - 93976B IRF9140 100V, P-CHANNEL REPETITIVE AVALANCHE AND dv/dt RATED HEXFET TRANSISTORS THRU-HOLE TO-204AA/AE Product Summary Part Number BVDSS RDS(on) IRF9140 -100V 0.2Ω ID -18A The HEXFET technology is the key to International Rectifier’s advanced line of power MOSFET transistors.
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93976B
IRF9140
O-204AA/AE)
-100V
-100A/Â
-100V,
O-204AA
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IRF9140
Abstract: No abstract text available
Text: PD - 93976B IRF9140 100V, P-CHANNEL REPETITIVE AVALANCHE AND dv/dt RATED HEXFET TRANSISTORS THRU-HOLE TO-204AA/AE Product Summary Part Number BVDSS RDS(on) IRF9140 -100V 0.2Ω ID -18A The HEXFET technology is the key to International Rectifier’s advanced line of power MOSFET transistors.
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93976B
IRF9140
O-204AA/AE)
-100V
-100A/
-100V,
--TO-204AA
IRF9140
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IRF (10A) 55V
Abstract: IRF5YZ48CM
Text: PD - 94019A HEXFET POWER MOSFET THRU-HOLE TO-257AA IRF5YZ48CM 55V, N-CHANNEL Product Summary Part Number BVDSS IRF5YZ48CM 55V RDS(on) 0.029Ω ID 18A* Fifth Generation HEXFET® power MOSFETs from International Rectifier utilize advanced processing techniques to achieve the lowest possible on-resistance
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4019A
O-257AA)
IRF5YZ48CM
O-257AA
IRF (10A) 55V
IRF5YZ48CM
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IRFN9140
Abstract: JANTX2N7236U JANTXV2N7236U
Text: PD - 91553D POWER MOSFET SURFACE MOUNT SMD-1 IRFN9140 JANTX2N7236U JANTXV2N7236U REF:MIL-PRF-19500/595 100V, P-CHANNEL HEXFET MOSFET TECHNOLOGY Product Summary Part Number IRFN9140 RDS(on) I D 0.20Ω -18A HEXFET® MOSFET technology is the key to International
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91553D
IRFN9140
JANTX2N7236U
JANTXV2N7236U
MIL-PRF-19500/595
-100A/
-100V,
IRFN9140
JANTX2N7236U
JANTXV2N7236U
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Untitled
Abstract: No abstract text available
Text: PD - 94164A HEXFET POWER MOSFET THRU-HOLE TO-257AA IRL5Y7413CM 30V, N-CHANNEL Product Summary Part Number BVDSS IRL5Y7413CM 30V RDS(on) 0.025Ω ID 18A* Fifth Generation HEXFET® power MOSFETs from International Rectifier utilize advanced processing techniques to achieve the lowest possible on-resistance
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4164A
O-257AA)
IRL5Y7413CM
O-257AA
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1RF640
Abstract: 1RF640S 3V IC LINEAR SMD irf640a RD540 ov5s IRF640 1D11A IRF640 smd IRF640 applications note
Text: PD-9.374G International â ü Rectifier IRF640 HEXFET Power MOSFET • • • • • Dynamic dv/dt Rating Repetitive Avalanche Rated Fast Switching Ease of Paralleling Simple Drive Requirements VDSS= 200V R DS on = 0 . 1 8 0 lD = 18A Description DATA
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IRF640
T0-220
O-220
1RF640
1RF640S
3V IC LINEAR SMD
irf640a
RD540
ov5s
1D11A
IRF640 smd
IRF640 applications note
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Untitled
Abstract: No abstract text available
Text: FU JI 2SK2521-01 N-channel MOS-FET FAP-II Series 200V > Features - 0,1 m 18A 50W > Outline Drawing High Speed Switching Low On-Resistance No Secondary Breakdown Low Driving Power High Voltage Vgs = ± 30V Guarantee Avalanche Proof > Applications - Switching Regulators
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2SK2521-01
7027D8
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Untitled
Abstract: No abstract text available
Text: FU JI 2SK2522-01MR N-channel MOS-FET 200V o,i8a 18A 40 W FAP-II Series > Features - > Outline Drawing High Speed Switching Low On-Resistance No Secondary Breakdown Low Driving Power High Voltage V gs = ± 30V Guarantee Avalanche Proof > Applications - Switching Regulators
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2SK2522-01MR
20Ki2)
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2SK891
Abstract: n channel t mos transistor
Text: FIELD EFFECT TRANSISTOR SILICON N CHANNEL MOS TYPE 0T-MOSII 2SK891 INDUSTRIAL APPLICATIONS HIGH SPEED, HIGH CURRENT SWITCHING APPLICATIONS. CHOPPER REGULATOR, DC-DC CONVERTER AND MOTOR DRIVE APPLICATIONS. . L o w D r a i n -Source ON Resistance :R d s ON)= 0.14il(Typ.)
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2SK891
300/JA
00A/us
2SK891
n channel t mos transistor
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IRF240
Abstract: IN4723 irf640 IRF241 diodes IN4723 IRF243 IRF242 IRF641 IRF642 IRF643
Text: • IRF243 ■ IRF643 ■ IRF242 ■ IRF642 ■ IRF241 ■ IRF641 IRF240 IRF640 IRF240 ■ IRF241 ■ IRF242 ■ IRF243 IRF640 ■ IRF641 ■ IRF642 ■ IRF643 a S ilic o n ix Advanced Information 200V MOSPOWER N-Channel Enhancem ent-Mode These power FETs are designed especially for o ffline sw itching regulators, converters,
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IRF240
IRF241
IRF242
IRF243
IRF640
IRF641
IRF642
IRF643
IRF240
IRF241
IN4723
irf640
diodes IN4723
IRF242
IRF641
IRF642
IRF643
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Untitled
Abstract: No abstract text available
Text: FU JI 2SK2256-01 N-channel MOS-FET FAP-IIA Series 250V > Features 0,180 18A 80W > Outline Drawing - High Speed Switching - Low On-Resistance No Secondary Breakdown Low Driving Power High Voltage V gs = ± 30V Guarantee Avalanche Proof > Applications - Switching Regulators
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2SK2256-01
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Untitled
Abstract: No abstract text available
Text: FU JI 2SK2256-01 N-channel MOS-FET FAP-IIA Series 250V 18A 80W > Outline Drawing > Features - 0 ,1 8 0 High Speed Switching Low On-Resistance No Secondary Breakdown Low Driving Power High Voltage V gs = ± 30V Guarantee Avalanche Proof > Applications - Switching Regulators
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2SK2256-01
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Untitled
Abstract: No abstract text available
Text: IRF640, RF1S640SM Semiconductor Data Sheet 18A, 200V, 0.180 Ohm, N-Channel Power MOSFETs These are N-Channel enhancem ent mode silicon gate power field effect transistors. They are advanced power MOSFETs designed, tested, and guaranteed to withstand a specified level of energy in the breakdown avalanche mode
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IRF640,
RF1S640SM
180i2
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RF640
Abstract: irf640 IRF640 applications note IRF641 RF1S640SM9A IRF643 RF643 IRF640 circuit IRF642 RF1S640
Text: IRF640, IRF641, IRF642, RF1S640, RF1S640SM H A R R IS S E M I C O N D U C T O R 16A and 18A, 150V and 200V, 0.18 and 0.22 Ohm, N-Channel Power MOSFETs juiy 1998 Features Description • 16A and 18A, 150V and 200V • High Input Impedance These are N-Channel enhancement mode silicon gate
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IRF640,
IRF641,
IRF642,
RF643,
RF1S640,
RF1S640SM
TB334
IRF640
O-220AB
IRF640
RF640
IRF640 applications note
IRF641
RF1S640SM9A
IRF643
RF643
IRF640 circuit
IRF642
RF1S640
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2SJ464
Abstract: No abstract text available
Text: TOSHIBA 2SJ464 TOSHIBA FIELD EFFECT TRANSISTOR SILICON P CHANNEL MOS TYPE L2-?r-MOSV 2SJ464 INDUSTRIAL APPLICATIONS HIGH SPEED, HIGH CURRENT SWITCHING APPLICATIONS CHOPPER REGULATOR, DC-DC CONVERTER AND MOTOR DRIVE APPLICATIONS 4V Gate Drive Low Drain-Sorce ON Resistance : Rd S (ON)= 64mO (Typ.)
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2SJ464
-100M
-100V)
961001EAA2'
2SJ464
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Untitled
Abstract: No abstract text available
Text: • 4302271 QDS4033 T04 ■ 2 H A R R IS HAS IR F640/641/642/643 IR F640R /641R /642R /643R N-Channel Power MOSFETs Avalanche Energy Rated* August 1991 Features Package T0-22QAB TOP VIEW • 16A and 18A, 150V - 200V • rDS(on = 0 .1 8 0 and 0 .2 2 0 • Single Pulse Avalanche Energy Rated*
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QDS4033
F640/641/642/643
F640R
/641R
/642R
/643R
T0-22QAB
IRF640,
IRF641,
IRF642,
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irf9z34
Abstract: irf9z34 mosfet LT 424 M7 RECTIFIER
Text: International S Rectifier PD-9.648A IRF9Z34 HEXFET Power MOSFET • • • • • • • Dynamic dv/dt Rating Repetitive Avalanche Rated P-Channel 175°C Operating Temperature Fast Switching Ease of Paralleling Simple Drive Requirements V dss - "6 0 V
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IRF9Z34
T0-220
irf9z34
irf9z34 mosfet
LT 424
M7 RECTIFIER
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irfp240
Abstract: IRFP242 IRFP243 Harris Semiconductor irfp240 Mosfet irfp240
Text: H a IRFP240, IRFP241, IRFP242, IRFP243 r r i s ” “ I CONDUCTOE 18A and 20A, 200V and 150V, 0.18 and 0.22 Ohm, N-Channel Power MOSFETs January 1998 Features Description • 18A and 20A, 200V and 150V • High Input Im pedance These are N-Channel enhancement mode silicon gate
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IRFP240,
IRFP241,
IRFP242,
IRFP243
TA1742s
1-800-4-HARRIS
irfp240
IRFP242
IRFP243
Harris Semiconductor irfp240
Mosfet irfp240
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Untitled
Abstract: No abstract text available
Text: IRFP240 Semiconductor Data Sheet July 1999 20A, 200V, 0.180 Ohm, N-Channel Power MOSFET This N-Channel enhancement mode silicon gate power field effect transistor is an advanced power MOSFET designed, tested, and guaranteed to withstand a specified level of
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IRFP240
O-247
180i2
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Untitled
Abstract: No abstract text available
Text: tyvvys S IRFP240, IRFP241, IRFP242, IRFP243 Semiconductor y y 18A and 20A, 200V and 150V, 0.18 and 0.22 Ohm, N-Channel Power MOSFETs July 1998 Features Description • 18A and 20A, 200V and 150V • High Input Impedance These are N-Channel enhancement mode silicon gate
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IRFP240,
IRFP241,
IRFP242,
IRFP243
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Untitled
Abstract: No abstract text available
Text: MASSES 001 4552 International E?R Rectifier PD-9.568A IRC640 HEXFET Power MOSFET • • • • • • S3T • IN R INTERNATIONAL R E C T IF IE R Dynamic dv/dt Rating Repetitive Avalanche Rated Current Sense Fast Switching Ease of Paralleling Simple Drive Requirements
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IRC640
4U55452
DD14SST
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f640
Abstract: IR 643 643R
Text: 33 HARRIS IR F640/641/642/643 IR F640R/641R/642R /643R N-Channel Power MOSFETs Avalanche Energy Rated* August 1991 Features Package T O -2 2 0 A B TOP VIEW • 16A and 18A, 150V - 200V • rDS on = 0 .1 8 fi and 0 .2 2 0 • Single Pulse Avalanche Energy Rated*
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F640/641/642/643
F640R/641R/642R
/643R
IRF640,
IRF641,
IRF642,
IRF640R,
IRF641R,
IRF642R
IRF643R
f640
IR 643
643R
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