Please enter a valid full or partial manufacturer part number with a minimum of 3 letters or numbers

    LD 2.5A Search Results

    SF Impression Pixel

    LD 2.5A Price and Stock

    Fox Electronics FC3BSBBLD25A0-T3

    Crystal 25MHz 4-Pin CSMD T/R - Tape and Reel (Alt: FC3BSBBLD25A0-T3)
    Distributors Part Package Stock Lead Time Min Order Qty Price Buy
    Avnet Americas FC3BSBBLD25A0-T3 Reel 3,000
    • 1 -
    • 10 -
    • 100 -
    • 1000 -
    • 10000 -
    		Get Quote

    Ruland Manufacturing Co Inc MCLD-25-A

    NOMAR CLAMP SHAFT COLLAR ONE-PIECE 25MM D-BORE ALUMINUM | Ruland Manufacturing MCLD-25-A
    Distributors Part Package Stock Lead Time Min Order Qty Price Buy
    RS MCLD-25-A Bulk 3 Weeks 1
    • 1 $88.21
    • 10 $88.21
    • 100 $88.21
    • 1000 $88.21
    • 10000 $88.21
    		Get Quote

    SMC Corporation of America XLD-25-A93A

    ANGLE VALVE, HIGH VACUUM, ALUMINUM, SL SERIES | SMC Corporation XLD-25-A93A
    Distributors Part Package Stock Lead Time Min Order Qty Price Buy
    RS XLD-25-A93A Bulk 5 Weeks 1
    • 1 $994.28
    • 10 $994.28
    • 100 $994.28
    • 1000 $994.28
    • 10000 $994.28
    		Get Quote

    SMC Corporation of America XLD-25-A93LA

    Angle Valve, High Vacuum, alum,2 step control, sz 25 flange, 2 reed switches | SMC Corporation XLD-25-A93LA
    Distributors Part Package Stock Lead Time Min Order Qty Price Buy
    RS XLD-25-A93LA Bulk 1
    • 1 $1006.83
    • 10 $1006.83
    • 100 $1006.83
    • 1000 $1006.83
    • 10000 $1006.83
    		Get Quote

    LD 2.5A Datasheets (1)

    Part ECAD Model Manufacturer Description Curated Datasheet Type PDF
    LD25A EPCOS SAW Components Original PDF

    LD 2.5A Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    Untitled

    Abstract: No abstract text available
    Text: ISL9506 Data Sheet August 13, 2008 Multiphase PWM Controller with Programmable Output Voltage Features 1 • Small Footprint 40 Ld 6x6 QFN Package • Pb-Free RoHS compliant Applications • Mobile Laptop Computers • High Performance Point-of-Load Power Supply


    Original     		PDF ISL9506 FN6722 5m-1994.

    ISL6208

    Abstract: thermistor ntc 60 0250 IRF7821 ISL9506 ISL9506HRZ ISL9506HRZ-T TB347 TB379
    Text: ISL9506 Data Sheet August 13, 2008 Features 1 • Pb-Free RoHS compliant Applications • Mobile Laptop Computers • High Performance Point-of-Load Power Supply Pinout PGD_N DE_ENN DE_EN VR_EN VSEL6 VSEL5 VSEL4 VSEL3 ISL9506 (40 LD QFN) TOP VIEW 40 39


    Original     		PDF ISL9506 ISL9506 5m-1994. FN6722 ISL6208 thermistor ntc 60 0250 IRF7821 ISL9506HRZ ISL9506HRZ-T TB347 TB379

    N25A

    Abstract: 2SK1300 2SK1305 4AK20 SP-10 opel
    Text: HITACHI 4AK20-SILICON N-CHANNEL POWER MOS FET ARRAY HIGH S P E E D P O W E R S W IT C H IN G • FE A T U R E S • Low On-Resistance Rds on & 0.25 Q , VGS = 10 V, lD= 2.5 A Rds (on) ^ 0.35 £1, VQS = 4 V, lD = 2.5 A • Capable of 4 V Gate Drive


    OCR Scan     		PDF 4AK20- 2SK1300, 2SK1305 123H567B9I0 SP-10) 2SK1300 N25A 2SK1300 2SK1305 4AK20 SP-10 opel

    FQB3N40

    Abstract: FQI3N40
    Text: QFET N-CHANNEL FQB3N40, FQI3N40 FEATURES BV qss = 400V Advanced New Design R D S O N = 3 -4 i 2 Avalanche Rugged Technology lD = 2.5A Rugged Gate Oxide Technology Very Low Intrinsic Capacitances Excellent Switching Characteristics d 2- p a k i 2- p a k


    OCR Scan     		PDF FQB3N40, FQI3N40 O-263 PAK/TO-263 FQB3N40 FQI3N40

    A5 DIODE 22-35 L

    Abstract: No abstract text available
    Text: H Z7 SGS-THOMSON ^ 7 # . L6370 M IS i[U l© ¥ ® ® ö ü lD g l 2.5A HIGH-SIDE DRIVER INDUSTRIAL INTELLIGENT POWER SWITCH PRODUCT PREVIEW • 2.5A OUTPUT CURRENT ■ 9.5V TO 35V SUPPLY VOLTAGE RANGE . INTERNAL CURRENT LIMITING . THERMAL SHUTDOWN


    OCR Scan     		PDF L6370 A5 DIODE 22-35 L

    IRF820

    Abstract: top 258 pn
    Text: PD-9.3240 International S Rectifier IRF820 HEXFET Power MOSFET • • • • • Dynamic dv/dt Rating Repetitive Avalanche Rated Fast Switching Ease of Paralleling Simple Drive Requirements V dss - 500V ^DS on = lD = 2.5A Description DATA SH EETS Third Generation HEXFETs from International Rectifier provide the designer


    OCR Scan     		PDF IRF820 O-220 IRF820 top 258 pn

    Untitled

    Abstract: No abstract text available
    Text: SFS9510 A dvanced Power MOSEET FEATURES B ^ • Avalanche Rugged Technology ■ Rugged Gate Oxide Technology ■ Lower Input Capacitance ■ Improved Gate Charge ■ 175°C Operating Temperature dss - ^ D S o n = lD ■ Extended Safe Operating Area ■


    OCR Scan     		PDF -100V SFS9510

    Untitled

    Abstract: No abstract text available
    Text: IRFR420 A d van ced Power MOSFET FEATURES BVdss = 500 V ♦ Avalanche Rugged Technology = 3.0Q ♦ Rugged Gate Oxide Technology ^DS on ♦ Lower Input Capacitance lD = 2.3 A ♦ Improved Gate Charge ♦ Extended Safe Operating Area ♦ Lower Leakage Current:


    OCR Scan     		PDF IRFR420

    SFS9510

    Abstract: No abstract text available
    Text: SFS9510 Advanced Power MOSFET FEATURES b v dss = -100 V • Avalanche Rugged Technology ■ Rugged Gate Oxide Technology ^DS on = ■ Lower Input Capacitance lD = -2.5 A ■ Improved Gate Charge ■ 175°C Operating Temperature ■ Extended Safe Operating Area


    OCR Scan     		PDF SFS9510 -100V 003m5 ihm42 SFS9510

    USSR DIODE

    Abstract: IRF730
    Text: PD-9.308K International r]Rectifier IRF730 HEXFET® Power MOSFET • • • • • Dynamic dv/dt Rating Repetitive Avalanche Rated Fast Switching Ease of Paralleling Simple Drive Requirements V DSS = 400V ^ D S o n = 1 lD = 5 .5A Description D ATA


    OCR Scan     		PDF IRF730 O-220 USSR DIODE IRF730

    A244

    Abstract: TP901 TP901C3 tp901c
    Text: TP901 C3 5A k _ LOW LOSS SUPER HIGH SPEED RECTIFIER Features Insulated package by fully m o ld in g . • te V F Low VF Super high speed sw itch in g . Connection Diagram High reliability by planer design. • £ ! & : Applications r+ H


    OCR Scan     		PDF TP901 15Unit a-180" 11II-â A244 TP901C3 tp901c

    Untitled

    Abstract: No abstract text available
    Text: IRFR/U420A A d van ced Power MOSFET FEATURES BVdss = 500 V ♦ Avalanche Rugged Technology = 3.0Q ♦ Rugged Gate Oxide Technology ^DS on ♦ Lower Input Capacitance lD = 2.3 A ♦ Improved Gate Charge ♦ Extended Safe Operating Area ♦ Lower Leakage Current:


    OCR Scan     		PDF IRFR/U420A

    Untitled

    Abstract: No abstract text available
    Text: SFR/U9120 Advanced Power MOSEET FEATURES B ^ dss - • Avalanche Rugged Technology ■ Rugged Gate Oxide Technology ^D S o n = ■ Lower Input Capacitance lD = ■ Improved Gate Charge ■ Extended Safe Operating Area ■ Lower Leakage Current : 10|iA (M ax.) @ VDS = -100V


    OCR Scan     		PDF -100V SFR/U9120

    Untitled

    Abstract: No abstract text available
    Text: SSF7N90A Advanced Power MOSFET FEATURES b vdss = • Avalanche Rugged Technology ■ Rugged Gate Oxide Technology ^DS on = ■ Lower Input Capacitance ■ Improved Gate Charge lD = ■ Extended Safe Operating Area ■ Lower Leakage Current : 25 n A (M a x ) @ VDS = 900V


    OCR Scan     		PDF SSF7N90A

    IRFI620G

    Abstract: irfi620
    Text: PD-9.832 International S Rectifier IRFI620G HEXFET Power M OSFET • • • • • Isolated Package High Voltage lsolation= 2.5KVRMS Sink to Lead Creepage Dist.= 4.8mm Dynamic dv/dt Rating Low Thermal Resistance VDSS = 200V ^DS on - 0 - 8 0 ^ lD - 4.1 A


    OCR Scan     		PDF IRFI620G O-220 IRFI620G irfi620

    D0405

    Abstract: SSS4N80A
    Text: SSS4N80A Advanced Power MOSFET FEATURES BV dss = 800 V • Avalanche Rugged Technology ■ Rugged Gate Oxide Technology ^D S on = ■ Lower Input Capacitance lD = 2.5 A ■ ■ Improved Gate Charge Extended Safe Operating Area ■ Lower Leakage Current : 25 jiA (Max.) @ VDS = 800V


    OCR Scan     		PDF SSS4N80A t0-220f 71bHli 0D405S0 D0405 SSS4N80A

    IRF MOSFET 100A 200v

    Abstract: IRL620A
    Text: IRL620A A d vanced Power MOSFET FEATURES BVDSS — ♦ Avalanche Rugged Technology ^DS on = 0.8Î2 ♦ Rugged Gate Oxide Technology lD = 5 A ♦ Logic-Level Gate Drive 200 V ♦ Lower Input Capacitance ♦ Improved Gate Charge TO-220 ♦ Extended Safe Operating Area


    OCR Scan     		PDF IRL620A IRF MOSFET 100A 200v IRL620A

    2SK2718

    Abstract: transistor 2sk2718
    Text: TOSHIBA 2SK2718 TOSHIBA FIELD EFFECT TRANSISTOR SILICON N CHANNEL MOS TYPE tt-MOSIII 2SK2718 HIGH SPEED, HIGH CURRENT SWITCHING APPLICATIONS INDUSTRIAL APPLICATIONS U nit in mm • High Forward Transfer Admittance : |Yfs| = 2.0S (Typ.) • Low Leakage C urrent : lD gg = 100,6iA(Max.) (V]3 g = 720V)


    OCR Scan     		PDF 2SK2718 100//A 2SK2718 transistor 2sk2718

    SSU3N90A

    Abstract: No abstract text available
    Text: SSU3N90A Advanced Power MOSFET FEATURES BV dss = 900 V • Avalanche Rugged Technology ■ Rugged Gate Oxide Technology ^D S on = ■ Lower Input Capacitance lD = 2.5 A ■ Improved Gate Charge ■ Extended Safe Operating Area ■ Lower Leakage Current : 25 jjA (Max.) @ VDS = 900V


    OCR Scan     		PDF SSU3N90A 004Gb34 DD4Db35 SSU3N90A

    IRF MOSFET 100A 200v

    Abstract: ru-32 IRL620
    Text: IRL620 A d vanced Power MOSFET FEATURES BVDSS — ♦ Avalanche Rugged Technology ^DS on = 0.8Î2 ♦ Rugged Gate Oxide Technology lD = 5 A ♦ Logic-Level Gate Drive 200 V ♦ Lower Input Capacitance ♦ Improved Gate Charge TO-220 ♦ Extended Safe Operating Area


    OCR Scan     		PDF IRL620 IRF MOSFET 100A 200v ru-32 IRL620

    Untitled

    Abstract: No abstract text available
    Text: SFS9644 Advanced Power MOSFET FEATURES B V dss = • Avalanche Rugged Technology ■ Rugged Gate Oxide Technology ^DS on = ■ Lower Input Capacitance lD = ■ Improved Gate Charge ■ Extended Safe Operating Area ■ Lower Leakage Current : 1 0 |^A (M a x.) @ V DS = -250V


    OCR Scan     		PDF SFS9644 -250V T0-220F

    SSU3N80A

    Abstract: No abstract text available
    Text: SSU3N80A Advanced Power MOSFET FEATURES B V dss = 800 V • Avalanche Rugged Technology ■ Rugged Gate Oxide Technology ^DS on = ■ Lower Input Capacitance lD = 2.5 A ■ Improved Gate Charge ■ Extended Safe Operating Area ■ Lower Leakage Current : 25 nA (Max.) @ V DS = 800V


    OCR Scan     		PDF SSU3N80A SSU3N80A

    sfr 135

    Abstract: TA 8269 H diode SFR-135
    Text: SFR/U9120 Advanced Power MOSFET FEATURES BVdss = -100 V • Avalanche Rugged Technology = 0.6 £2 ■ Rugged Gate Oxide Technology ^DS on ■ Lower Input Capacitance lD = -4.9 A ■ ■ Improved Gate Charge Extended Safe Operating Area ■ Lower Leakage Current : 10 |iA (Max.) @ VDS = -100V


    OCR Scan     		PDF SFR/U9120 -100V sfr 135 TA 8269 H diode SFR-135

    Untitled

    Abstract: No abstract text available
    Text: SSP5N90A Advanced Power MOSFET FEATURES bvdss = 900 V • Avalanche Rugged Technology ■ Rugged Gate Oxide Technology ^D S on = ■ Lower Input Capacitance ■ Improved Gate Charge lD = 5 A ■ Extended Safe Operating Area ■ Lower Leakage Current : 25 nA (M a x.) @ VOS= 900V


    OCR Scan     		PDF SSP5N90A