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    LC BRIDGE CIRCUIT Search Results

    LC BRIDGE CIRCUIT Result Highlights (5)

    Part ECAD Model Manufacturer Description Download Buy
    TLP2701 Toshiba Electronic Devices & Storage Corporation Photocoupler (photo-IC output), 5000 Vrms, 4pin SO6L Visit Toshiba Electronic Devices & Storage Corporation
    74HC4053FT Toshiba Electronic Devices & Storage Corporation CMOS Logic IC, SPDT(1:2)/Analog Multiplexer, TSSOP16B, -40 to 125 degC Visit Toshiba Electronic Devices & Storage Corporation
    74HC4051FT Toshiba Electronic Devices & Storage Corporation CMOS Logic IC, SP8T(1:8)/Analog Multiplexer, TSSOP16B, -40 to 125 degC Visit Toshiba Electronic Devices & Storage Corporation
    TCKE800NA Toshiba Electronic Devices & Storage Corporation eFuse IC (electronic Fuse), 4.4 to 18 V, 5.0 A, Auto-retry, WSON10B Visit Toshiba Electronic Devices & Storage Corporation
    TCKE800NL Toshiba Electronic Devices & Storage Corporation eFuse IC (electronic Fuse), 4.4 to 18 V, 5.0 A, Latch, WSON10B Visit Toshiba Electronic Devices & Storage Corporation

    LC BRIDGE CIRCUIT Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    MAX138

    Abstract: No abstract text available
    Text: GBU8A ~ GBU8M VOLTAGE 50V ~ 1000V 8.0 AMP Glass Passivated Bridge Rectifiers Elektronische Bauelemente RoHS Compliant Product A suffix of “-C” specifies halogen-free. LC-35 .874 22.2 .860(21.8) n Glass passivated die construction n Ideal for printed circuit board


    Original     		PDF LC-35 1500VRMS 50mVp-p 01-Jun-2002 MAX138

    Untitled

    Abstract: No abstract text available
    Text: “BIG IDEAS IN BIG POWER” • PowerTecn FET BIPOLAR POWER LINEAR LC-1002 The LC-1002 Power Linear® consists of a quad FET input circuit driving a 450V, 90A bipolar output transistor. A fly­ back diode is provided to allow the use of these devices as driving elements in H-bridge or 3-phase bridge circuits


    OCR Scan     		PDF LC-1002 LC-1002 MIL-S-19500. 20Ki2)

    C1022

    Abstract: IRGTDN300K06 "welding circuit " IGBT 1022 MC
    Text: Provisional Data Sheet PD-9.1199 Rectifier S IRGTDN300K06 “HALF-BRIDGE" IGBT DOUBLE INT-A-PAK Low conduction loss IGBT Half-Bridge -o3 r VCE = 600V lc = 300A • Rugged Design •Simple gate-drive •Switching-Loss Rating includes all "tail" losses •Short circuit rated


    OCR Scan     		PDF IRGTDN300K06 L---02 techniq15V C-1022 C1022 IRGTDN300K06 "welding circuit " IGBT 1022 MC

    OF IGBT 300A 500V

    Abstract: IRGTDN300M06 ETH9
    Text: brtemational Im i Rectifier Provisional Data Sheet PD-9.1179 IRGTDN300M06 Low conduction loss IGBT "HALF-BRIDGE" IGBT DOUBLE INT-A-PAK Half-Bridge —O3 VCE = 600V lc = 300A • Rugged Design • Simple gate-drive •Switching-Loss Rating includes all "tail"


    OCR Scan     		PDF IRGTDN300M06 C-462 OF IGBT 300A 500V IRGTDN300M06 ETH9

    12V 5A rectifier

    Abstract: No abstract text available
    Text: PH26560 Series Preliminary POWER HYBRID 15A DUAL 1/2 H-BRIDGE DRIVERS DESCRIPTION FEATURES • 15A Drive Capability • 4 Drivers with Catch Rectifiers • Fast Switching Speeds ton =35nsec @lc =5A, Vcc =30V toff =300nsec @lc =5A, Vcc =30V • 100V Breakdown on


    OCR Scan     		PDF PH26560 35nsec 300nsec PH26560 12V 5A rectifier

    IRGTIN075M12

    Abstract: diode C546 C541 DIODE DIODE C545 irgtin igb1 diode c544 Diode C541
    Text: International P r]Rectifier PM1,H' IRGTIN075M12 "HALF-BRIDGE" IGBT INT-A-PAK Low conduction loss IGBT Half-Bridge p i f-o 3 VCE= 1200V 4o— 1|^ , lc = 7 5 A 5=— -4_ •Rugged Design ■Simple gate-drive ■Switching-Loss Rating includes all “tail"


    OCR Scan     		PDF IRGTIN075M12 0D20335 C-545 C-546 554S2 2G33b diode C546 C541 DIODE DIODE C545 irgtin igb1 diode c544 Diode C541

    VQE 23 E

    Abstract: VQE 22 e
    Text: euoec F BSM 50 GB 120 DN2 IGBT Power Module • Half-bridge • Including fast free-wheeling diodes • Package with insulated metal base plate Type VbE BSM 50 GB 120 DN2 1200V 78A lC Package Ordering Code HALF-BRIDGE 1 C67076-A2105-A70 Maximum Ratings Parameter


    OCR Scan     		PDF C67076-A2105-A70 Oct-21-1997 VQE 23 E VQE 22 e

    transistors c458

    Abstract: btm 110 module C458
    Text: International khlRectifier Provisional Data Sheet PD-9.1177 IRGTDN150M06 "HALF-BRIDGE" IGBT DOUBLE INT-A-PAK Low conduction loss IGBT VCE= 600V lc = 150A • Rugged Design •Simple gate-drive •Switching-Loss Rating includes all "tail" losses •Short circuit rated


    OCR Scan     		PDF IRGTDN150M06 S5452 GG2024fl C-458 transistors c458 btm 110 module C458

    C1019

    Abstract: 200a 300v mosfet
    Text: International [xôrIRectifier Provisional Data Sheet PD -9.1198 IRGTDN200K06 "HALF-BRIDGE" IGBT DOUBLE INT-A-PAK Low conduction loss IGBT VCE = 600V lc = 200A •Rugged Design •Simple gate-drive •Switching-Loss Rating includes all "tail" losses •Short circuit rated


    OCR Scan     		PDF IRGTDN200K06 C-1020 C1019 200a 300v mosfet

    Untitled

    Abstract: No abstract text available
    Text: International lÏMtlRectifier Provisional Data Sheet PD-9.1191 IRGTIN050K06 Low conduction loss IGBT "HALF-BRIDGE" IGBT INT-A-PAK Half-Bridge n — o3 V CE = 6 0 0 V lc = 5 0 A V ce O N < 2 .7 V • Rugged Design •Simple gate-drive •Switching-Loss Rating includes all "tail"


    OCR Scan     		PDF IRGTIN050K06 Outllne11 C-1004

    TR C458

    Abstract: transistors c458 C458
    Text: International ^R ectifier Provisional Data Sheet PD-9.1177 IRGTDN150M06 "HALF-BRIDGE" IGBT DOUBLE INT-A-PAK Low conduction loss IGBT VCE = 600V lc = 150A • Rugged Design •Simple gate-drive •Switching-Loss Rating includes all "tail" losses •Short circuit rated


    OCR Scan     		PDF IRGTDN150M06 C-458 TR C458 transistors c458 C458

    Untitled

    Abstract: No abstract text available
    Text: International ür]Rectifier Provisional Data Sheet PD-9.1158 IRGTIN150M06 Low conduction loss IGBT “HALF-BRIDGE" IGBT INT-A-PAK Vce=600V lc = 150A • Rugged Design • Simple gate-drive •Switching-Loss Rating includes all "tail" losses •Short circuit rated


    OCR Scan     		PDF IRGTIN150M06 C-450

    200a 300v mosfet

    Abstract: No abstract text available
    Text: bitemational Km Rectifier Provisional Data Sheet PD-9.1198 IRGTDN200K06 Low conduction loss IGBT "HALF-BRIDGE" IGBT DOUBLE INT-A-PAK V CE = 600V lc = 200A • Rugged Design •Simple gate-drive •Switching-Loss Rating includes all "tail" losses •Short circuit rated


    OCR Scan     		PDF IRGTDN200K06 C-460 GD2025D 200a 300v mosfet

    200a 300v mosfet

    Abstract: No abstract text available
    Text: Provisional Dd.tsi Sh ôt PD*9.1198 1°R Rectifier IRGTDN200K06 "HALF-BRIDGE" IGBT DOUBLE INT-A-PAK Low conduction loss IGBT VCE = 600V lc = 200A • Rugged Design •Simple gate-drive •Switching-Loss Rating includes all "tail“ losses •Short circuit rated


    OCR Scan     		PDF IRGTDN200K06 C-460 200a 300v mosfet

    DIODE C536

    Abstract: C536 IRGTIN050M12 C535 transistors C537 DIODE C538 IOR 536 mosfet 600V 50A irgtin IG8T
    Text: PD-9.1167 bitemational ïorJRectifier IRGTIN050M12 "HALF-BRIDGE" IGBT INT-A-PAK Low conduction loss IGBT VCE= 1200V lc = 50A • Rugged Design .Simple gate-drive .Switching-Loss Rating includes all "tail" losses .Short circuit rated V ce ON < 2.7V tsc> 10 ms


    OCR Scan     		PDF IRGTIN050M12 C-539 10OnH 5545E QGEG33G DIODE C536 C536 C535 transistors C537 DIODE C538 IOR 536 mosfet 600V 50A irgtin IG8T

    igbt 500V 50A

    Abstract: mosfet 500V 50A mosfet 600V 50A
    Text: International ^Rectifier Provisional Data Sheet PD-9.1191 IRGTIN050K06 "HALF-BRIDGE" IGBT INT-A-PAK Low conduction loss IGBT VCE = 600V lc = 50A V ce ON < 2.7V • Rugged Design •Simple gate-drive •Switching-Loss Rating includes all “tail" losses •Short circuit rated


    OCR Scan     		PDF IRGTIN050K06 Outline11 C-1004 S5452 igbt 500V 50A mosfet 500V 50A mosfet 600V 50A

    IRGTIN150K06

    Abstract: c1009
    Text: International HRectifier Provisional Data Sheet PD-9.1194 IRGTIN150K06 "HALF-BRIDGE" IGBT INT-A-PAK Low conduction loss IGBT Vœ = 600V lc = 150A Vce ON < 2.7V • Rugged Design •Simple gate-drive .Switching-Loss Rating includes all "tail" losses •Short circuit rated


    OCR Scan     		PDF IRGTIN150K06 Outline11 C-1010 IRGTIN150K06 c1009

    siemens igbt BSM 75 gb 100

    Abstract: GTS FC-22 1B02 siemens igbt BSM 150 gb 100 d gts fc-518ls
    Text: SIEMENS IGBT Module BSM 75 GB 160 D 750gb16a doc VCE= 1600 V /c = 2* 100 A at r c = 25°C lc = 2* 75 A at Tc =80°C • Power module • Half-bridge • Including fast free-wheel diodes • Package with insulated metal base plate Half bridge Type BSM 75 GB 160D


    OCR Scan     		PDF 750gb16a C67076-A2113-A2 20ki2 80fiC 75ltrg fl23SbGS 751tig 125SC aP35bOS S23SbOS siemens igbt BSM 75 gb 100 GTS FC-22 1B02 siemens igbt BSM 150 gb 100 d gts fc-518ls

    IRGTDN100M12

    Abstract: No abstract text available
    Text: bitemational ^ R e c tifie r IRGTDN100M12 "HALF-BRIDGE" IGBT DOUBLE INT-A-PAK Low conduction loss IGBT VCE= 1200V lc = 100A •Rugged Design •Simple gate-drive •Switching-Loss Rating includes all "tail" losses •Short circuit rated V ce ON < 2.5V tsc> 10 ms


    OCR Scan     		PDF IRGTDN100M12 C-567 C-568 IRGTDN100M12

    c548 st

    Abstract: No abstract text available
    Text: International B Rectifier p— »d-»« « IRGTIN100M12 "HALF-BRIDGE" IGBT INT-A-PAK Low conduction loss IGBT VCE= 1200V lc = 100A «Rugged Design •Simple gate-drive •Switching-Loss Rating includes all "tail" losse s .Short circuit rated Vce ON < 2.7V


    OCR Scan     		PDF IRGTIN100M12 Outline11 C-548 c548 st

    Untitled

    Abstract: No abstract text available
    Text: International k*r]Rectifier Provisional Data Sheet PD-9.1155 IRGTIN050M06 Low conduction loss IGBT "HALF-BRIDGE" IGBT INT-A-PAK VŒ = 600V lc = 50A Vce ON < 2.0V .Rugged Design • Simple gate-drive .Switching-Loss Rating includes all "tail" losses • Short circuit rated


    OCR Scan     		PDF IRGTIN050M06 0utline11 C-444

    C1017

    Abstract: No abstract text available
    Text: Provisional Data Sheet PD-9.1200 International [^Rectifier IRGTDN150K06 "HALF-BRIDGE" IGBT DOUBLE INT-A-PAK Low conduction loss IGBT VCE = 600V lc = 150A • Rugged Design •S im ple gate-drive •S w itching-Loss Rating includes all "tail" losses •S h ort circuit rated


    OCR Scan     		PDF IRGTDN150K06 C-1018 5S452 C1017

    OF IGBT 300A 500V

    Abstract: irgtdn300m06
    Text: International Rectifier Provisional Data Sheet PD-9.1179 IRGTDN300M06 "HALF-BRIDGE" IGBT DOUBLE INT-A-PAK Low conduction loss IGBT VCE = 600V lc = 300A • Rugged Design •S im p le gate-drive •Switching-Loss Rating includes all "tail" losses •S ho rt circuit rated


    OCR Scan     		PDF IRGTDN300M06 C-462 00E02S2 OF IGBT 300A 500V irgtdn300m06

    shct

    Abstract: WE VQE 24 E IRGTDN150M12 IR 501
    Text: International ^R ectifier PD9206 IRGTDN150M12 "HALF-BRIDGE" IGBT DOUBLE INT-A-PAK Low conduction loss IGBT V Œ = 1200V lc = 1 5 0 A • Rugged Design •Simple gate-drive •Switching-Loss Rating includes all "tail'1 losses •Short circuit rated Vce O N < 2 .5 V


    OCR Scan     		PDF IRGTDN150M12 100nH C-574 4flSS452 002D3b4 shct WE VQE 24 E IRGTDN150M12 IR 501