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    Abstract: WE VQE 24 E IRGTDN150M12 IR 501
    Text: International ^R ectifier PD9206 IRGTDN150M12 "HALF-BRIDGE" IGBT DOUBLE INT-A-PAK Low conduction loss IGBT V Œ = 1200V lc = 1 5 0 A • Rugged Design •Simple gate-drive •Switching-Loss Rating includes all "tail'1 losses •Short circuit rated Vce O N < 2 .5 V


    OCR Scan     		PDF IRGTDN150M12 100nH C-574 4flSS452 002D3b4 shct WE VQE 24 E IRGTDN150M12 IR 501

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    Text: blE » I MITSUBISHI MITSUBISHI LSIs b24TflE5 G D 2 0 3 b 3 S7Ô • M I T I H E H O R Y / A S I C MH25636X J,SX J-8,-10 FAST PAGE MODE 9437184-BIT(262144-WORD BY 36-BIT)DYNAMIC RAM DESCRIPTION MH25636XJ, SXJ is 262144-w ord by 3 6 -b it dynamic RAM module. This consists of tw o industry standard 256K x 18bit


    OCR Scan     		PDF b24TflE5 MH25636X 9437184-BIT 262144-WORD 36-BIT MH25636XJ, 262144-w 18bit