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    LB 125 TRANSISTOR Search Results

    LB 125 TRANSISTOR Result Highlights (5)

    Part ECAD Model Manufacturer Description Download Buy
    TTC5886A Toshiba Electronic Devices & Storage Corporation NPN Bipolar Transistor / hFE=400~1000 / VCE(sat)=0.22V / tf=120ns Visit Toshiba Electronic Devices & Storage Corporation
    TTA2097 Toshiba Electronic Devices & Storage Corporation PNP Bipolar Transistor / hFE=200~500 / VCE(sat)=-0.27V / tf=60ns Visit Toshiba Electronic Devices & Storage Corporation
    XPQR8308QB Toshiba Electronic Devices & Storage Corporation N-ch MOSFET, 80 V, 350 A, 0.00083 Ω@10V, L-TOGL Visit Toshiba Electronic Devices & Storage Corporation
    XPQ1R00AQB Toshiba Electronic Devices & Storage Corporation N-ch MOSFET, 100 V, 300 A, 0.00103 Ω@10V, L-TOGL Visit Toshiba Electronic Devices & Storage Corporation
    TK190U65Z Toshiba Electronic Devices & Storage Corporation MOSFET, N-ch, 650 V, 15 A, 0.19 Ohm@10V, TOLL Visit Toshiba Electronic Devices & Storage Corporation

    LB 125 TRANSISTOR Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    Untitled

    Abstract: No abstract text available
    Text: DCX4710H 100mA DUAL COMPLEMENTARY PRE-BIASED TRANSISTORS General Description • DCX4710H is best suited for applications where the load needs to be turned on and off using micro-controllers, comparators or other control circuits, particularly at a point of


    Original     		PDF DCX4710H 100mA DCX4710H OT-563 DS30871

    Untitled

    Abstract: No abstract text available
    Text: DCX4710H Lead-free Green 100mA DUAL COMPLEMENTARY PRE-BIASED TRANSISTORS NEW PRODUCT General Description • DCX4710H is best suited for applications where the load needs to be turned on and off using micro-controllers, comparators or other control circuits particularly at a point of


    Original     		PDF DCX4710H 100mA DCX4710H OT-563 DS30871

    Untitled

    Abstract: No abstract text available
    Text: DCX4710H Lead-free Green 100mA DUAL COMPLEMENTARY PRE-BIASED TRANSISTORS NEW PRODUCT General Description • DCX4710H is best suited for applications where the load needs to be turned on and off using micro-controllers, comparators or other control circuits, particularly at a point of


    Original     		PDF DCX4710H 100mA DCX4710H OT-563 DS30871

    marking code SM diode

    Abstract: 10KW DCX4710H DDTA114YE DDTC114EE transistor Marking code 1KW MARKING code 46 sot 563
    Text: DCX4710H Lead-free Green 100mA DUAL COMPLEMENTARY PRE-BIASED TRANSISTORS NEW PRODUCT General Description • DCX4710H is best suited for applications where the load needs to be turned on and off using micro-controllers, comparators or other control circuits particularly at a point of


    Original     		PDF DCX4710H 100mA DCX4710H OT-563 DS30871 marking code SM diode 10KW DDTA114YE DDTC114EE transistor Marking code 1KW MARKING code 46 sot 563

    NPN PNP sot-563

    Abstract: DCX4710H DCX4710H-7
    Text: DCX4710H 100mA DUAL COMPLEMENTARY PRE-BIASED TRANSISTORS General Description • DCX4710H is best suited for applications where the load needs to be turned on and off using micro-controllers, comparators or other control circuits, particularly at a point of


    Original     		PDF DCX4710H 100mA DCX4710H OT-563 DS30871 NPN PNP sot-563 DCX4710H-7

    Untitled

    Abstract: No abstract text available
    Text: DCX4710H Lead-free Green 100mA DUAL COMPLEMENTARY PRE-BIASED TRANSISTORS NEW PRODUCT General Description • DCX4710H is best suited for applications where the load needs to be turned on and off using micro-controllers, comparators or other control circuits particularly at a point of


    Original     		PDF DCX4710H 100mA DCX4710H OT-563 DS30871

    Untitled

    Abstract: No abstract text available
    Text: Philips Semiconductors Product specification Silicon Diffused Power Transistor BU2520AW GENERAL DESCRIPTION New generation, high-voltage, high-speed switching npn transistor in a plastic envelope intended for use in horizontal deflection circuits of large screen colour television receivers up to 32 kHz,


    OCR Scan     		PDF BU2520AW

    4N4X

    Abstract: No abstract text available
    Text: 66138 Features: Applications: • • • • • • • • • • mu SINGLE CHANNEL, HERMETIC 6 PIN LCC, ELECTRICALLY SIMILAR TO 4N22, 4N23, 4N24, 4N47, 4N48, 4N49 High Reliability Base lead provided for conventional transistor biasing Very high gain, high voltage transistor


    OCR Scan     		PDF 4N22U, 4N23U, 4N24U, 4N47U, 4N48U 4N49U 4N4X

    Untitled

    Abstract: No abstract text available
    Text: bGE D • fllBBlß? DQOGS1B 57b H S I I L B SEMELAB PLC SEMELAB T~-33-\3 BUL52B ADVANCED DISTRIBUTED BASE DESIGN HIGH VOLTAGE, HIGH SPEED NPN SILICON POWER TRANSISTOR M E C H A N IC A L D A T A D im ensio ns in m m D esigned for use in electronic ballast lighting applications


    OCR Scan     		PDF BUL52B 300/iS

    LB-19

    Abstract: BU2520A BY228 ak4a po254
    Text: Philips Semiconductors Product specification Silicon Diffused Power Transistor BU2520A GENERAL DESCRIPTION New generation, high-voltage, high-speed switching npn transistor in a plastic envelope intended for use in horizontal deflection circuits of large screen colour television receivers up to 32 kHz.


    OCR Scan     		PDF BU2520A 110fiPb LB-19 BU2520A BY228 ak4a po254

    transistor 800V 1A

    Abstract: No abstract text available
    Text: Mil =X= mi SEME BUL52B LAB ADVANCED DISTRIBUTED BASE DESIGN HIGH VOLTAGE HIGH SPEED NPN SILICON POWER TRANSISTOR MECHANICAL DATA Dimensions in mm f* 10.2 -► , 4.5 1.3 3.6 Dia. 1 2 Designed for use in electronic ballast applications • SEMEFAB DESIGNED AND DIFFUSED DIE


    OCR Scan     		PDF BUL52B T0220 100mA transistor 800V 1A

    Untitled

    Abstract: No abstract text available
    Text: IMI = fï= IMI SEME BUL52BFI LAB ADVANCED DISTRIBUTED BASE DESIGN HIGH VOLTAGE HIGH SPEED NPN SILICON POWER TRANSISTOR MECHANICAL DATA Dimensions in mm <* 10.2 *\ 3.6 Dia. Designed for use in electronic ballast applications • SEMEFAB DESIGNED AND DIFFUSED DIE


    OCR Scan     		PDF BUL52BFI T0220 100mA

    BU2530

    Abstract: No abstract text available
    Text: Philips Sem iconductors Product specification Silicon Diffused Power Transistor BU2530AL GENERAL DESCRIPTION New generation, high-voltage, high-speed switching npn transistor in a plastic envelope intended for use in horizontal deflection circuits of large screen colour television receivers up to 32 kHz.


    OCR Scan     		PDF BU2530AL BU2530

    Untitled

    Abstract: No abstract text available
    Text: 66064 Features: Applications: • • • • • • • • • • mu SINGLE CHANNEL, HERMETIC 20 PIN LCC, ELECTRICALLY SIMILAR TO 4N47, 4N48, 4N49 High Reliability Base lead provided for conventional transistor biasing Very high gain, high voltage transistor


    OCR Scan     		PDF

    chip die npn transistor

    Abstract: No abstract text available
    Text: Illl =K= Illl SEME BUL72B LAB ADVANCED DISTRIBUTED BASE DESIGN HIGH VOLTAGE HIGH SPEED NPN SILICON POWER TRANSISTOR MECHANICAL DATA Dimensions in mm - 0 24 //*"- Designed for use in electronic ballast applications • SEMEFAB DESIGNED AND DIFFUSED DIE • HIGH VOLTAGE


    OCR Scan     		PDF BUL72B OT-223 chip die npn transistor

    Untitled

    Abstract: No abstract text available
    Text: Mil =X= mi SEME BUL68A LAB MECHANICAL DATA Dimensions in mm 2 .1 8 0 .086 ADVANCED DISTRIBUTED BASE DESIGN HIGH VOLTAGE HIGH SPEED NPN SILICON POWER TRANSISTOR Designed for use in electronic ballast applications • SEMEFAB DESIGNED AND DIFFUSED DIE • HIGH VOLTAGE


    OCR Scan     		PDF BUL68A T0251)

    Untitled

    Abstract: No abstract text available
    Text: Mil = ^ = INI BUL56A SEME LAB MECHANICAL DATA Dimensions in mm 4.5 10.2 , f*-► f*-1.3 ADVANCED DISTRIBUTED BASE DESIGN HIGH VOLTAGE HIGH SPEED NPN SILICON POWER TRANSISTOR 3.6 Dia. Designed for use in electronic ballast applications • SEMEFAB DESIGNED AND DIFFUSED DIE


    OCR Scan     		PDF BUL56A T0220

    LAB 250 LB

    Abstract: alc100
    Text: Mil =X= mi SEME BUL63B LAB MECHANICAL DATA Dimensions in mm 2 .1 8 0 .086 ADVANCED DISTRIBUTED BASE DESIGN HIGH VOLTAGE HIGH SPEED NPN SILICON POWER TRANSISTOR Designed for use in electronic ballast applications • SEMEFAB DESIGNED AND DIFFUSED DIE • HIGH VOLTAGE


    OCR Scan     		PDF BUL63B T0251) LAB 250 LB alc100

    Untitled

    Abstract: No abstract text available
    Text: Mil =X= mi SEME BUL66B LAB MECHANICAL DATA Dimensions in mm 2 .1 8 0 .086 ADVANCED DISTRIBUTED BASE DESIGN HIGH VOLTAGE HIGH SPEED NPN SILICON POWER TRANSISTOR Designed for use in electronic ballast applications • SEMEFAB DESIGNED AND DIFFUSED DIE • HIGH VOLTAGE


    OCR Scan     		PDF BUL66B T0251)

    Untitled

    Abstract: No abstract text available
    Text: Mil = ^ = IN I BUL58A SEME LAB MECHANICAL DATA Dimensions in mm 4.5 10.2 , f*-► f*-1.3 ADVANCED DISTRIBUTED BASE DESIGN HIGH VOLTAGE HIGH SPEED NPN SILICON POWER TRANSISTOR 3.6 Dia. Designed for use in electronic ballast applications • SEMEFAB DESIGNED AND DIFFUSED DIE


    OCR Scan     		PDF BUL58A T0220

    Untitled

    Abstract: No abstract text available
    Text: Mil = ^ = M il SEME BUL62B LAB ADVANCED DISTRIBUTED BASE DESIGN HIGH VOLTAGE HIGH SPEED NPN SILICON POWER TRANSISTOR MECHANICAL DATA Dimensions in mm inches 2 .1 8 (0 .0 8 6 ) Designed for use in electronic ballast applications SEMEFAB DESIGNED AND DIFFUSED DIE


    OCR Scan     		PDF BUL62B O-251) 100mA

    Untitled

    Abstract: No abstract text available
    Text: SuperSOT SOT23 NPN SILICON POWER SWITCHING TRANSISTORS FMMT617 FMMT618 FMMT619 FMMT624 FMMT625 ISS U E 3 - N O V EM B ER 1995_ FEATURES * 625mW POWER DISSIPATIO N * * * * * lc C O N T 3 A 12A Peak Pulse Current Excellent HF£ Characteristics Up To 12A (pulsed)


    OCR Scan     		PDF FMMT617 FMMT618 FMMT619 FMMT624 FMMT625 625mW 100mA FMMT618

    Untitled

    Abstract: No abstract text available
    Text: Illl = V r= Illl SEME BUL56B-SM LAB NPN FAST SWITCHING TRANSISTOR MECHANICAL DATA Dimensions in mm FEATURES 11.5 2.0 3.5 •LOW SATURATION VOLTAGE 0.25 r* 3.5 •ULTRA FAST TURN-ON AND TURN-OFF SWITCHING tr / t f = 40ns 3.0 r4 * J —k ÏT APPLICATIONS 14


    OCR Scan     		PDF BUL56B-SM T0220

    Untitled

    Abstract: No abstract text available
    Text: Mil = ^ = IN I BUL53B SEME LAB MECHANICAL DATA Dimensions in mm 4.5 10.2 , f*-► f*-1.3 ADVANCED DISTRIBUTED BASE DESIGN HIGH VOLTAGE HIGH SPEED NPN SILICON POWER TRANSISTOR 3.6 Dia. Designed for use in electronic ballast applications • SEMEFAB DESIGNED AND DIFFUSED DIE


    OCR Scan     		PDF BUL53B T0220