LA-4611P
Abstract: KB926QFA1 south bridge SIS 968 la4611 sis m672 307ELV SiS307ELV ICS9LPR600 JP36B kb926qf
Text: A B PJP1 PJP1 14W_DCIN 15W_DCIN 14W_45@ 15W_45@ C D E 1 1 Compal Confidential KSW01/91 Schematics Document 2 2 Intel Merom Processor with SiSM672/FX + DDRII + SiS968 + SiS307ELV 2008-08-01 ZZZ9 3 REV: 0.2 PCB ZZZ1 ZZZ3 ZZZ4 ZZZ5 ZZZ6 PCB LA-4611P LS-4243P
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KSW01/91
SiSM672/FX
SiS968
SiS307ELV
14WDAZ@
LA-4611P
14WDA@
LS-4243P
LS-4244P
LA-4611P
KB926QFA1
south bridge SIS 968
la4611
sis m672
307ELV
ICS9LPR600
JP36B
kb926qf
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OZ960
Abstract: zener diode 7A3 inverter 16b2 zener diode zener 15B2 diode 21D8 10 C4237 54b6 diode 21D8 zener 9A2 11b3 DIODE ZENER
Text: CR-1 8 7 6 5 2 3 4 CK APPD 1. ALL RESISTANCE VALUES ARE IN OHMS, 0.1 WATT +/- 5%. 2. ALL CAPACITANCE VALUES ARE IN MICROFARADS. 3. ALL CRYSTALS & OSCILLATOR VALUES ARE IN HERTZ. PAGE D C 4,5 6,7 8 9 MPC7450 MAXBUS CPU SPEED & CONFIG OPTIONS BOOTBANGER CPU LA CONNECTORS, ESP, CPU BYPASS
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MPC7450
OZ960
zener diode 7A3
inverter 16b2 zener diode
zener 15B2
diode 21D8 10
C4237
54b6
diode 21D8
zener 9A2
11b3 DIODE ZENER
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kbc 1098
Abstract: KBC1098-NU smsc kbc 1091 kbc1098 Smsc kbc1098 MMBT3904WH 2N7002DWH smsc kbc 1098 HCB2012KF-121T50 RTM890N-632-GRT
Text: A B C D E 1 1 Compal Confidential Schematics Document 2 2 INTEL AUBURNDALE with IBEX core logic Cartier UMA 3 3 LA-4902P 2009-12-07 REV:1.0 4 4 Compal Secret Data Security Classification 2008/09/15 Issued Date 2009/12/31 Deciphered Date THIS SHEET OF ENGINEERING DRAWING IS THE PROPRIETARY PROPERTY OF COMPAL ELECTRONICS, INC. AND CONTAINS CONFIDENTIAL
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LA-4902P
kbc 1098
KBC1098-NU
smsc kbc 1091
kbc1098
Smsc kbc1098
MMBT3904WH
2N7002DWH
smsc kbc 1098
HCB2012KF-121T50
RTM890N-632-GRT
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tps51225
Abstract: No abstract text available
Text: User's Guide SLVU735 – June 2012 Dual Synchronous Step-Down Fixed Output Controller with 5-V and 3.3-V LDOs The TPS51225EVM-133 evaluation module EVM uses the TPS51225. The TPS51225 is a D-CAP mode, dual synchronous step down controller with 5- and 3.3-V low-dropout regulators (LDO). The EVM
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SLVU735
TPS51225EVM-133
TPS51225.
TPS51225
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Untitled
Abstract: No abstract text available
Text: User's Guide SLUU311A – APRIL 2008 – Revised JULY 2012 High Performance Synchronous Buck EVM Using the TPS51125 1 2 3 4 5 6 7 8 Contents Introduction . 2
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SLUU311A
TPS51125
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PJ4N
Abstract: PJ4N3KDW MARKING GA SOT-363 DM800
Text: PJ4N3KDW 30V Dual N-Channel Enhancement Mode MOSFET - ESD Protected FEATURES • RDS ON , VGS@2.5V,IDS@1mA=7.0Ω • RDS(ON), VGS@4.0V,IDS@10mA=5.0Ω • Advanced Trench Process Technology • High Density Cell Design For Ultra Low On-Resistance • The MOSFET elements are independent,eliminating interference
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2002/95/EC
OT-363
PJ4N
PJ4N3KDW
MARKING GA SOT-363
DM800
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Untitled
Abstract: No abstract text available
Text: PJ4N3KDW 30V Dual N-Channel Enhancement Mode MOSFET - ESD Protected SOT-363 FEATURES Unit：inch mm • Advanced Trench Process Technology 0.087(2.20) 0.074(1.90) • High Density Cell Design For Ultra Low On-Resistance 0.010(0.25) • The MOSFET elements are independent,eliminating interference
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OT-363
RB500V-40
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PJ4N
Abstract: marking code ga sot 363 MARKING CODE LA sot363 sot-363 marking DS marking CODE GA sot363 ZE marking sot-363 SOT 363 marking CODE LA sot363 XI PJ4N3KDW
Text: PJ4N3KDW 30V Dual N-Channel Enhancement Mode MOSFET - ESD Protected SOT-363 FEATURES Unit：inch mm • RDS(ON), VGS@4.0V,IDS@10mA=5.0Ω • Advanced Trench Process Technology 0.087(2.20) 0.074(1.90) • High Density Cell Design For Ultra Low On-Resistance
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2002/95/EC
IEC61249
OT-363
RB500V-40
PJ4N
marking code ga sot 363
MARKING CODE LA sot363
sot-363 marking DS
marking CODE GA sot363
ZE marking sot-363
SOT 363 marking CODE LA
sot363 XI
PJ4N3KDW
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PJ4N
Abstract: No abstract text available
Text: PJ4N3KDW 30V Dual N-Channel Enhancement Mode MOSFET - ESD Protected FEATURES • RDS ON , VGS@4.0V,IDS@10mA=5.0 0.018(0.45) 0.006(0.15) • RDS(ON), VGS@2.5V,IDS@1mA=7.0 0.087(2.20) 0.074(1.90) • Advanced Trench Process Technology 0.030(0.75) 0.021(0.55)
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K27 mOSFET
Abstract: MARKING K27 2N7002KDW LA sot363 2N7002KD k27 sot-363 60V N-Channel Enhancement Mode MOSFET - ESD Protected
Text: 2N7002KDW 60V N-Channel Enhancement Mode MOSFET - ESD Protected SOT-363 • RDS ON , VGS@10V,IDS@500mA=3Ω Unit: inch (mm) 0.054(1.35) 0.045(1.15) • High Density Cell Design For Ultra Low On-Resistance 0.030(0.75) 0.021(0.55) 0.087(2.20) 0.074(1.90) • Advanced Trench Process Technology
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2N7002KDW
OT-363
500mA
200mA
OT-363
2010-REV
K27 mOSFET
MARKING K27
2N7002KDW
LA sot363
2N7002KD
k27 sot-363
60V N-Channel Enhancement Mode MOSFET - ESD Protected
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K27 SOT-363 MARKING
Abstract: No abstract text available
Text: 2N7002KDW 60V N-Channel Enhancement Mode MOSFET - ESD Protected • RDS ON , VGS@10V,IDS@500mA=3Ω • RDS(ON), VGS@4.5V,IDS@200mA=4Ω 0.087(2.20) 0.074(1.90) 0.010(0.25) • Advanced Trench Process Technology 0.018(0.45) 0.006(0.15) FEATURES 0.087(2.20) 0.078(2.00)
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2N7002KDW
200mA
2002/95/EC
OT-363
MIL-STD-750
2010-REV
OT-363
K27 SOT-363 MARKING
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PDF
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Untitled
Abstract: No abstract text available
Text: 2N7002KDW 60V N-Channel Enhancement Mode MOSFET - ESD Protected SOT-363 Unit：inch mm • RDS(ON), VGS@10V,IDS@500mA=3Ω • RDS(ON), VGS@4.5V,IDS@200mA=4Ω 0.087(2.20) 0.074(1.90) 0.010(0.25) • Advanced Trench Process Technology 0.018(0.45) 0.006(0.15)
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2N7002KDW
500mA
200mA
OT-363
OT-363
MIL-STD-750
2010-REV
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PDF
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Untitled
Abstract: No abstract text available
Text: 2N7002KDW 60V N-Channel Enhancement Mode MOSFET - ESD Protected SOT-363 Unit：inch mm • RDS(ON), VGS@10V,IDS@500mA=3Ω • RDS(ON), VGS@4.5V,IDS@200mA=4Ω 0.087(2.20) 0.074(1.90) 0.010(0.25) • Advanced Trench Process Technology 0.018(0.45) 0.006(0.15)
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2N7002KDW
OT-363
500mA
200mA
2002/95/EC
IEC61249
2010-REV
RB500V-40
2N7002KDW
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PDF
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K2765
Abstract: No abstract text available
Text: 2N7002KDW 60V N-Channel Enhancement Mode MOSFET - ESD Protected SOT-363 Unit：inch mm • RDS(ON), VGS@10V,IDS@500mA=3Ω • RDS(ON), VGS@4.5V,IDS@200mA=4Ω 0.087(2.20) 0.074(1.90) 0.010(0.25) • Advanced Trench Process Technology 0.018(0.45) 0.006(0.15)
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2N7002KDW
500mA
200mA
2002/95/EC
IEC61249
OT-363
OT-363
2010-REV
RB500V-40
K2765
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PDF
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PMGD400UN
Abstract: PMF290XN PMF370XN PMF400UN PMF780SN PMGD290XN PMGD370XN PMGD780SN PMGD8000LN clk sot323
Text: M £=]M npr • ipr mmw IjTrenchMOS Se " ß m um m i« * ! lEE SOT323 PI SOT363 î 5 g | $ î § 20v >30vS|60vSnì1 jìmosfets B9 8 H « S ^ g {a] b m * - tv § ?ì jr~ mm \ f2 mm tJfV e "f Kf l £>>r ffifc-ffl « S ii? h SS tf - m 'm % àfc ° as ^ Ê^
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3ovPI6ovSn3151mosfets
OT323
OT363
tSOT23/jN40%
500mi3
jg/MSOT323
SC-70-Â
fflSOT363
SC-88-M)
PMGD400UN
PMF290XN
PMF370XN
PMF400UN
PMF780SN
PMGD290XN
PMGD370XN
PMGD780SN
PMGD8000LN
clk sot323
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Untitled
Abstract: No abstract text available
Text: DISCRETE SEMICONDUCTORS BGA2022 MMIC mixer Objective specification Supersedes data of 1999 Jan 14 Philips Sem iconductors 1999 Feb 25 PHILIPS Philips Semiconductors Objective specification MMIC mixer BGA2022 FEATURES PINNING SOT363 • Large frequency range:
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BGA2022
BGA2022
OT363
125006/3100/03/pp8
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Untitled
Abstract: No abstract text available
Text: MOTOROLA Order this document by MDC5001T1/D SEMICONDUCTOR TECHNICAL DATA MDC5001T1 Low Voltage Bias Stabilizer w ith Enable • Maintains Stable Bias Current in N -Type Discrete Bipolar Junction and Field Effect Transistors • Provides Stable Bias Using a Single Component W ithout Use of Emitter Ballast
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MDC5001T1/D
MDC5001T1
419B-01
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Untitled
Abstract: No abstract text available
Text: DISCRETE SEMICONDUCTORS PUMH7 NPN resistor-equipped double transistor Product specification Supersedes data of 1998 Jun 29 Philips Sem iconductors 1999 Apr 22 PHILIPS PHILIPS Philips Semiconductors Product specification NPN resistor-equipped double transistor
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OCR Scan
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115002/00/02/pp8
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PDF
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RQ TRANSISTOR
Abstract: No abstract text available
Text: DISCRETE SEMICONDUCTORS PÂTÂ SlnlEET PUMD12 NPN/PNP resistor-equipped transistor Product specification Philips Sem iconductors 1999 Apr 26 PHILIPS Philips Semiconductors Product specification NPN/PNP resistor-equipped transistor PUMD12 FEATURES • Transistors with different polarity
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OCR Scan
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PUMD12
SC-88)
115002/00/01/pp8
RQ TRANSISTOR
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PDF
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lm 9805
Abstract: No abstract text available
Text: DISCRETE SEMICONDUCTORS Philips Sem iconductors PHILIPS Philips Semiconductors Objective specification MMIC mixer BGA2022 FEATURES PINNING SOT363 • Large freq uency range: PIN DESCRIPTION - cellular band 900 MHz 1 LO - ground - PCS band (1900 MHz) 2 LO - signal
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BGA2022
OT363
SCA61
lm 9805
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PDF
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MOSFET 4466
Abstract: 4466 8 pin mosfet pin voltage 4466 mosfet
Text: DISCRETE SEMICONDUCTORS BITÂ SyiIT BF1102 Dual N-channel dual gate MOS-FET Preliminary specification Philips Sem iconductors 1999 May 17 PHILIPS Philips Semiconductors Preliminary specification Dual N-channel dual gate MOS-FET BF1102 PINNING - SOT363 FEATURES
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BF1102
OT363
BF1102
MOSFET 4466
4466 8 pin mosfet pin voltage
4466 mosfet
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PDF
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Untitled
Abstract: No abstract text available
Text: DISCRETE SEMICONDUCTORS PÄ m s ^i i t BGA2031 MMIC variable gain amplifier Objective specification 1998 Sep 01 File under Discrete Semiconductors, SC14 Philips Sem iconductors PHILIPS Philips Semiconductors Objective specification MMIC variable gain amplifier
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BGA2031
BGA2031
OT363
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PDF
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Untitled
Abstract: No abstract text available
Text: SÌ1904EDH Vishay Siliconix New Product Dual N-Channel 25-V D-S MOSFET FEATURES PRODUCT SUMMARY 0 .8 1 0 @ V g s = 4 .5 V 0 .7 3 • TrenchFET Power MOSFETS: 2.5-V Rated • ESD Protected: 1800 V • Thermally Enhanced SC-70 Package 1 .04 @ V Gs = 0.65
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1904EDH
SC-70
OT-363
SC-70
S-03929--
21-May-01
SM904EDH
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PDF
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hall marking code A04
Abstract: M143206EVK differences uc3842a uc3842b toshiba satellite laptop battery pinout 2N3773 audio amplifier diagram toshiba laptop battery pack pinout BC413 motorola transistor sj 5812 M68HC705X16 ABB inverter motor fault code
Text: Introduction Advanced Digital r i Consumer Products L-l Microcomputer Components [2 Logic: Standard, Special p , and Programmable I-5* Analog and Interface Integrated Circuits Semiconductor r= Components Group L5 Product Literature and r~ Technical Training L”
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2PHX14226-31
hall marking code A04
M143206EVK
differences uc3842a uc3842b
toshiba satellite laptop battery pinout
2N3773 audio amplifier diagram
toshiba laptop battery pack pinout
BC413
motorola transistor sj 5812
M68HC705X16
ABB inverter motor fault code
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PDF
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