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    L54 PACKAGE Search Results

    L54 PACKAGE Result Highlights (5)

    Part ECAD Model Manufacturer Description Download Buy
    TPH9R00CQH Toshiba Electronic Devices & Storage Corporation MOSFET, N-ch, 150 V, 64 A, 0.009 Ohm@10V, SOP Advance / SOP Advance(N) Visit Toshiba Electronic Devices & Storage Corporation
    TPH2R408QM Toshiba Electronic Devices & Storage Corporation MOSFET, N-ch, 80 V, 120 A, 0.00243 Ohm@10V, SOP Advance Visit Toshiba Electronic Devices & Storage Corporation
    XPH2R106NC Toshiba Electronic Devices & Storage Corporation N-ch MOSFET, 60 V, 110 A, 0.0021 Ω@10V, SOP Advance(WF) Visit Toshiba Electronic Devices & Storage Corporation
    XPH3R206NC Toshiba Electronic Devices & Storage Corporation N-ch MOSFET, 60 V, 70 A, 0.0032 Ω@10V, SOP Advance(WF) Visit Toshiba Electronic Devices & Storage Corporation
    TPH4R008QM Toshiba Electronic Devices & Storage Corporation MOSFET, N-ch, 80 V, 86 A, 0.004 Ohm@10V, SOP Advance(N) Visit Toshiba Electronic Devices & Storage Corporation

    L54 PACKAGE Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    D164K

    Abstract: L69 MARKING CODE 5962-9206203MYX CY7C245-35DMB smd CY 203 CY7C424-40DMB 14LX smd cross reference SMD MARKING CODE UV 5962-85525
    Text: SMD Cross Reference Listed below are the SMDs for which Cypress is an approved source of supply. Please contact your local Cypress representative for the latest SMD update. DESC SMD Standardized Military Drawing Approvals[1] Package[3] SMD Number 84036 84036


    Original     		PDF STD883, PRF1835 Pre1985 D164K L69 MARKING CODE 5962-9206203MYX CY7C245-35DMB smd CY 203 CY7C424-40DMB 14LX smd cross reference SMD MARKING CODE UV 5962-85525

    automatic change over switch circuit diagram

    Abstract: CY7C195-15VC CY7C196 7c196 CY7C194 CY7C195
    Text: 1CY 7C19 6 CY7C194 CY7C195 CY7C196 64K x 4 Static RAM Features Easy memory expansion is provided by active LOW chip enable s (CE on the CY7C194 and CY7C195, CE1, CE2 on the CY7C196) and three-state drivers. They have an automatic power-down feature, reducing the power consumption by 75%


    Original     		PDF CY7C194 CY7C195 CY7C196 CY7C194 CY7C195, CY7C196) 7C195 7C196) automatic change over switch circuit diagram CY7C195-15VC CY7C196 7c196 CY7C195

    AN5348K

    Abstract: AN5607NK Signal Processing AN5601 TV Circuit voltage AN5622N an5858k AN5371NS an5625n AN5366
    Text: ICs/LSIs for TV • Chroma Signal/Video Signal Processing Circuits Type No. Functions V Package No. MN8230A 4.75 to 5.25 Digital comb filter QFP084-P-1818 L72 MN8232A 4.75 to 5.25 Picture-in-picture controller QFH064-P-1010 L54 AN5302K Van = 12, Ve« = 9


    OCR Scan     		PDF MN8230A MN8232A AN5302K AN5304NK QFP084-P-1818 QFH064-P-1010 SDIP052-P-0600A QFH080-P-1420B proceN5348K AN5348K AN5607NK Signal Processing AN5601 TV Circuit voltage AN5622N an5858k AN5371NS an5625n AN5366

    Untitled

    Abstract: No abstract text available
    Text: DATA SHEET PHOTO DIODE NDL5471R Series 1 000 to 1 600 nm OPTICAL FIBER COMMUNICATIONS 0120 ¡urn InGaAs PIN PHOTO DIODE RECEPTACLE MODULE DESCRIPTION T h e N D L54 71 R S eries is an InG aA s PIN ph oto diod e rece ptacle m odule e s p e c ia lly d e sig n e d for a d e te cto r of long


    OCR Scan     		PDF NDL5471R P10263EJ4V

    HI401

    Abstract: 7C196 CY7C194 CY7C195 CY7C196
    Text: MbE D • asaibt.2 D D O b b b M 2 n CYP CYPRESS SEMICONDUCTOR CYPRESS W SEMICONDUCTOR Features Automatic power-down when deselected Output Enable ÖE feature (7CX95 and7C196) CMOS for optimum speed/power Highspeed — t^A = 25 ns Low active power — 880 mW


    OCR Scan     		PDF CY7C194 CY7C195 7CX95 and7C196) CY7C194, CY7C195, CY7C196 CY7C194 theCY7C196) HI401 7C196 CY7C195

    Untitled

    Abstract: No abstract text available
    Text: CY7C194 CY7C195 CY7C196 CYPRESS SEMICONDUCTOR Features Automatic power-down when deselected Output Enable OE feature (7C195 and 7C196) CMOS for optimum speed/power High speed — tAA = 25 ns Low active power — 880 mW Low standby power — 220 mW TTL-compatible inputs and outputs


    OCR Scan     		PDF CY7C194 CY7C195 CY7C196 7C195 7C196) CY7C195, CY7C196) CY7C194, CY7C196

    7C192-12

    Abstract: 7C192-15 7C192-20 A10C CY7C191 CY7C192 CY7C192-25PC
    Text: MbE D CYPRESS SEMICON DUC TOR B 250^fc,b2 OOQfc.1,42 3 E 3 C Y P CY7C191 CY7C192 CYPRESS SEMICONDUCTOR Features • Automatic power-down when deselected • Transparent write 7C19X • CMOS for optimum speed/power • H ighspeed — tM = 25 ns • Low active power


    OCR Scan     		PDF CY7C191 CY7C192 7C19X) TheCY7C191 CY7C192 CY7C192-45VC CY7C192-45DMB CY7C192-45KMB CY7C192â 45LMB 7C192-12 7C192-15 7C192-20 A10C CY7C192-25PC

    Untitled

    Abstract: No abstract text available
    Text: CY7C191 CY7C192 b m - . C Y PR ESS r SEMICONDUCTOR Features • Automatic power-down when deselected • Transparent write 7C191 • CMOS for optimum speed/power • Highspeed — tAA = 25 ns • Low active power — 880 mW • Low standby power


    OCR Scan     		PDF CY7C191 CY7C192 7C191) CY7C192â 35KMB 35LMB

    Untitled

    Abstract: No abstract text available
    Text: CY7C161A CY7C162A " ’V P P T T C C SEMICONDUCTOR Features • Automatic power-down when dese­ lected • T ransparent write (7C161A • CMOS for optimum speed/power • High speed - 15 ns Ua • Low active power - 550 mW • Low standby power - 220 mW


    OCR Scan     		PDF CY7C161A CY7C162A 7C162A 7C161A) CY7C162A

    Untitled

    Abstract: No abstract text available
    Text: CY7C185A p yXpX : v « *1 8K x 8 Static RAM three-state drivers. The device has an automatic power-down feature CE-| , reducing the power consumption by over 70% when deselected. The CY7C185A is in the standard 300-mil-wide DIP package and leadless chip carrier.


    OCR Scan     		PDF CY7C185A CY7C185A 300-mil-wide

    Untitled

    Abstract: No abstract text available
    Text: CY7C191 CY7C192 " ^ cÌ press SEMICONDUCTOR Features • Automatic power-down when deselected • Transparent write 7C191 • CMOS for optimum speed/power • High speed — ‘ a a = 2 5 ns • Low active power — 880 raW • Low standby power 65,536 x 4 Static R/W RAM


    OCR Scan     		PDF CY7C191 CY7C192 7C191) 7C192

    la25p

    Abstract: CY7C161A CY7C162A range-26
    Text: MOE D CY PR ESS S E M I C O N D U C T O R EH 250^2 DOOMfibH 0 B B C V P 7= tf-2> /0 CY7C161A CY7C162A CYPRESS SEMICONDUCTOR Features • Automatic power-down when dese­ lected • TVansparent write 7C161A • CMOS for optimum speed/power • High speed


    OCR Scan     		PDF -7Z-10 CY7C161A CY7C162A 7C161A) CY7C162A 7C161A la25p range-26

    Untitled

    Abstract: No abstract text available
    Text: CY7C161 CY7C162 CYPRESS SEMICONDUCTOR Features • Automatic power-down when deselected • Transparent write 7C161 • CMOS for optimum speed/power • High speed — 15 ns U a • Low active power — 633 mW • Low standby power — 220 mW • TTL compatible inputs and outputs


    OCR Scan     		PDF CY7C161 CY7C162 7C161) CY7C161â CY7C162â

    Untitled

    Abstract: No abstract text available
    Text: CY7C161A CY7C162A CYPRESS SEMICONDUCTOR Features • Automatic power-down when dese­ lected • T ransparent write 7C161A • CMOS for optim um speed/power • High speed - 15 ns t* • Low active power - 550 mW • Low standby power - 220 mW • TTL-compatible inputs and outputs


    OCR Scan     		PDF CY7C161A CY7C162A 7C161A) 7C162A chiY7C161A

    Untitled

    Abstract: No abstract text available
    Text: CY7C161A CY7C162A CYPRESS SEMICONDUCTOR 16,384 x 4 Static R/W RAM Separate I/O is written into the memory location speci­ fied on the address pins Ao through A 1 3 . Capable o f w ithstanding greater than 2001V electrostatic discharge. Features • Automatic power-down when dese­


    OCR Scan     		PDF CY7C161A CY7C162A CY7C161A CY7C162A CY7C162Aâ 35DMB 35KMB 35LMB

    P13V

    Abstract: No abstract text available
    Text: CY7C194 CY7C195 CY7C196 CYPRESS SEMICONDUCTOR Features Automatic power-down when deselected Output Enable OE feature (7C195 and 7C196) CMOS for optimum speed/power High speed — t,\A “ 25 ns Low active power — 880 mW Low standby power — 220 mW TTL-compatible inputs and outputs


    OCR Scan     		PDF CY7C194 CY7C195 CY7C196 7C195 7C196) --35K --45L P13V

    7c198

    Abstract: CY7C198-55DMB 19835 CY7C198-15DMB
    Text: CY7C198 _ CY7C199 CYPRESS " SEMICONDUCTOR 32,768 x 8 Static RAV RAM both LOW, data on the eight data input/ output pins I/Oo through I/O7 is written into the memoiy location addressed by the address present on the address pins (Ao through A 14). Reading the device is ac­


    OCR Scan     		PDF CY7C198 CY7C199 CY7C198 7c198 CY7C198-55DMB 19835 CY7C198-15DMB

    CY7CI99-55KMB

    Abstract: 25L54 7C198-25 7C19825 7C199-15 7C199-25 7C199-35 CY7C198 CY7C199 cy7c199-25vc
    Text: CY7C198 CY7C199 CYPRESS -= s SEMICONDUCTOR Features Functional Description • Automatic power-down when deselected • CMOS for optimum speed/power ■ High speed — 25 ns • h ow active power The CY7C198 and CY7C199 are highperformance CMOS static RAM s orga­


    OCR Scan     		PDF CY7C198 CY7C199 300-mil-widD22 CY7C199â CY7CI99-55KMB 25L54 7C198-25 7C19825 7C199-15 7C199-25 7C199-35 cy7c199-25vc

    Untitled

    Abstract: No abstract text available
    Text: CY7C191 CY7C192 f ' 1Y P P T 7 C C SEMICONDUCTOR F eatures • Automatic power-down when deselected • Transparent write 7C19I • CMOS for optimum speed/power • High speed — U a = 2 s ns • Low active power — 660 mW • Low standby power — 193 mW


    OCR Scan     		PDF CY7C191 CY7C192 7C192 7C19I) CY7C192 38-00076-F

    7cl6

    Abstract: D-2501 CY7C161A CY7C162 CY7C162A
    Text: CYPRESS SEMICONDUCTOR 4bE » B SSfl'lbfe.S □ QQbMSb b q c y p CY7C161A CY7C162A • - j/ "— = 16,384 x 4 Static RAV RAM Separate I/O SEMICONDUCTOR Features • Automatic power-down when dese­ lected • Transparent write 7C161A • CMOS for optimum speed/power


    OCR Scan     		PDF CY7C161A CY7C162A 7C161A) CY7C162 au62A-35DMB CY7C162Aâ 35KMB CY7C162A-35LMB CY7C162A-45DMB 7cl6 D-2501 CY7C162A

    Untitled

    Abstract: No abstract text available
    Text: CY7C194 CY7C195 CY7C196 CYPRESS SEMICONDUCTOR Features • Automatic power-down when deselected • Output Enable OE feature (7CI95 and 7C196) • CMOS for optimum speed/power • High speed - t\A = 25 ns • Low active power - 660 mW • Low standby power


    OCR Scan     		PDF CY7C194 CY7C195 CY7C196 7CI95 7C196) CY7C194, CY7C195, CY7C196 7C194

    cl98

    Abstract: cy7c198-45dc CY7C199-15LMB 7C199-12 7C199-15 CY7C198 CY7C199 cy7c199-15pc
    Text: CYPRESS 4bE SEMICONDUCTOR asa%t>a aoobba? 3 i » CYP CY7C198 CY7C199 CYPRESS SEMICONDUCTOR 32,768 x 8 Static R/W RAM Features Functional Description • Automatic power-down when deselected • CMOS for optimum speed/power • Hlgb speed — 25 ns » Low active power


    OCR Scan     		PDF CY7C198 CY7C199 CY7C199 CY7C198 T-46-23-14 cl98 cy7c198-45dc CY7C199-15LMB 7C199-12 7C199-15 cy7c199-15pc

    Untitled

    Abstract: No abstract text available
    Text: CY7C161A CY7C162A SEMICONDUCTOR Features • Automatic power-down when dese­ lected • Transparent write 7C161A 16,384 x 4 Static R/W RAM Separate I/O • Capable o f withstanding greater than 2001V electrostatic discharge. is written into the memory location speci­


    OCR Scan     		PDF CY7C161A CY7C162A 7C161A) 7C162A --20D --25DM --25KMB --35D

    CY7C197

    Abstract: CV7C197
    Text: MbE D n " T CYPRESS SEMICONDUCTOR Features Automatic power-down when deselected CMOS for optimum speed/power Highspeed — 20ns Low active power — 880 mW Low standlgr power — 220 mW TlX-compatible imputs and outputs Capable ofwithstanding greater than


    OCR Scan     		PDF CY7C197 2001Velectrostatic CY7C197 CY7C197-45LC CY7C197-45PC CY7C197-45VC CY7C197-45DMB CY7C197-45KMB CY7C197-45LMB CV7C197