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    L21 DIODE Search Results

    L21 DIODE Result Highlights (5)

    Part ECAD Model Manufacturer Description Download Buy
    CUZ24V Toshiba Electronic Devices & Storage Corporation Zener Diode, 24 V, USC Visit Toshiba Electronic Devices & Storage Corporation
    XCUZ13V Toshiba Electronic Devices & Storage Corporation Zener Diode, 13.0 V, USC Visit Toshiba Electronic Devices & Storage Corporation
    XCUZ36V Toshiba Electronic Devices & Storage Corporation Zener Diode, 36.0 V, USC Visit Toshiba Electronic Devices & Storage Corporation
    CUZ12V Toshiba Electronic Devices & Storage Corporation Zener Diode, 12 V, USC Visit Toshiba Electronic Devices & Storage Corporation
    MUZ5V6 Toshiba Electronic Devices & Storage Corporation Zener Diode, 5.6 V, USM Visit Toshiba Electronic Devices & Storage Corporation

    L21 DIODE Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    BAS29

    Abstract: BAS31 BAS35
    Text: Transys Electronics L I M I T E D SOT-23 BAS29, BAS31, BAS35 SILICON PLANAR EPITAXIAL HIGH-SPEED DIODE BAS29 single diode, BAS31 dual diodes in series and BAS35 dual diodes, common anodes. PACKAGE OUTLINE DETAILS ALL DIMENSIONS IN mm Marking BAS29– L20 BAS31 – L21


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    PDF OT-23 BAS29, BAS31, BAS35 BAS29 BAS31 BAS35 BAS29­ BAS31

    Untitled

    Abstract: No abstract text available
    Text: Preliminary OD-B1222-L21 1.25Gbps OLT Transceiver 2R for PON system FEATURES „ Applied to OLT(Optical Line Termination) for Single Fiber Bi-directional transmission on PON System. „ Compliant with ITU-T G.984.2 Class A and IEEE802.3ah 1000BASE-PX10-D applicable


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    PDF OD-B1222-L21 25Gbps IEEE802 1000BASE-PX10-D SW1-290 EWV-19-0064-P2E

    Untitled

    Abstract: No abstract text available
    Text: BAS31 BAS31 Connection Diagram 3 3 3 L21 2 1 1 2 1 2 SOT-23 Small Signal Diode Absolute Maximum Ratings* Symbol TA = 25°C unless otherwise noted Parameter Value Units VRRM Maximum Repetitive Reverse Voltage 120 V IF AV Average Rectified Forward Current 200


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    PDF BAS31 OT-23

    33L21

    Abstract: BAS31 BAV19 GENERAL PURPOSE DIODE
    Text: BAS31 CONNECTION DIAGRAM 3 3 3 L21 2 1 2 1 SOT-23 2 1 High Voltage General Purpose Diode Sourced from Process 1H. See BAV19 / 20 / 21 for characteristics. Absolute Maximum Ratings* Symbol TA = 25°C unless otherwise noted Parameter Value Units W IV Working Inverse Voltage


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    PDF BAS31 OT-23 BAV19 33L21 BAS31 GENERAL PURPOSE DIODE

    BAS31

    Abstract: BAV19
    Text: BAS31 BAS31 CONNECTION DIAGRAM 3 3 3 L21 2 SOT-23 1 2 1 1 2 High Voltage General Purpose Diode Sourced from Process 1H. See BAV19 / 20 / 21 for characteristics. Absolute Maximum Ratings* Symbol TA = 25°C unless otherwise noted Parameter Value Units W IV Working Inverse Voltage


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    PDF BAS31 OT-23 BAV19 BAS31

    BAS31

    Abstract: No abstract text available
    Text: BAS31 Discrete POWER & Signal Technologies N BAS31 CONNECTION DIAGRAM 3 3 3 L21 2 1 2 1 SOT-23 2 1 High Voltage General Purpose Diode Sourced from Process 1H. Absolute Maximum Ratings* Symbol TA = 25°C unless otherwise noted Parameter Value Units W IV Working Inverse Voltage


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    PDF BAS31 OT-23 BAS31

    BAY84

    Abstract: BAY85S D1850 SDBAX12 bay85 BAS21 A82 d53 MARKING CODE SOT23
    Text: SWITCHING DIODES SOT23 PACKAGE Ptot=350mW VR Part No. Marking V BAL99 JF 70 BAR99 JG 70 BAS16 A6 75 BAS19 A8 100 BAS20 A81 150 BAS21 A82 200 BAS29 L20 90 BAS31 L21 90 BAS35 L22 90 BAV70 A4 70 BAV99 A7 70 BAW56 A1 70 BAY84 D49 90 BAY85 D53 240 BAY85S DB6 240


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    PDF 350mW BAL99 BAR99 BAS16 BAS19 BAS20 BAS21 BAS29 BAS31 BAS35 BAY84 BAY85S D1850 SDBAX12 bay85 BAS21 A82 d53 MARKING CODE SOT23

    l21 diode marking

    Abstract: l21 diode marking c2 diode MARKING CODE l22 marking code C2 diode diode MARKING CODE C2 CODE L22 L21 marking code
    Text: Central CMPD1001 CMPD1001A CMPD1001S TM Semiconductor Corp. DESCRIPTION: The Central Semiconductor CMPD1001 series types are silicon switching diodes manufactured by the epitaxial planar process, designed for applications requiring high current capability.


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    PDF CMPD1001 CMPD1001A CMPD1001S OT-23 CMPD1001A 100mA 200mA l21 diode marking l21 diode marking c2 diode MARKING CODE l22 marking code C2 diode diode MARKING CODE C2 CODE L22 L21 marking code

    MARKING CODE l22

    Abstract: l21 code diode marking r5 l21 diode l21 diode marking CODE L22 diode marking ja CMPD1001 Marking code TM SOT23-6 CMPD1001S
    Text: Central CMPD1001 CMPD1001A CMPD1001S TM Semiconductor Corp. SURFACE MOUNT HIGH CURRENT SILICON SWITCHING DIODE DESCRIPTION: The Central Semiconductor CMPD1001 series types are silicon switching diodes manufactured by the epitaxial planar process, designed for


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    PDF CMPD1001 CMPD1001A CMPD1001S CMPD1001 OT-23 MARKING CODE l22 l21 code diode marking r5 l21 diode l21 diode marking CODE L22 diode marking ja Marking code TM SOT23-6 CMPD1001S

    L21 marking code

    Abstract: No abstract text available
    Text: CMPD1001 CMPD1001A CMPD1001S SURFACE MOUNT HIGH CURRENT SILICON SWITCHING DIODE w w w. c e n t r a l s e m i . c o m DESCRIPTION: The CENTRAL SEMICONDUCTOR CMPD1001 series types are silicon switching diodes manufactured by the epitaxial planar process, designed for applications


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    PDF CMPD1001 CMPD1001A CMPD1001S CMPD1001 OT-23 100mA 200mA L21 marking code

    l21 diode

    Abstract: l21 diode marking MARKING CODE l22 marking code 35 CODE L22 marking code diode CMPD1001 CMPD1001A CMPD1001S marking code
    Text: CMPD1001 CMPD1001A CMPD1001S SURFACE MOUNT HIGH CURRENT SILICON SWITCHING DIODE w w w. c e n t r a l s e m i . c o m DESCRIPTION: The CENTRAL SEMICONDUCTOR CMPD1001 series types are silicon switching diodes manufactured by the epitaxial planar process, designed for applications


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    PDF CMPD1001 CMPD1001A CMPD1001S CMPD1001 OT-23 100mA 200mA l21 diode l21 diode marking MARKING CODE l22 marking code 35 CODE L22 marking code diode CMPD1001A CMPD1001S marking code

    L21 marking code

    Abstract: CMPD1001S CMPD1001 CMPD1001A marking c2 diode
    Text: Central CMPD1001 CMPD1001A CMPD1001S TM Semiconductor Corp. HIGH CURRENT SWITCHING DIODE DESCRIPTION: The CENTRAL SEMICONDUCTOR CMPD1001 series types are silicon switching diodes manufactured by the epitaxial planar process, designed for applications requiring


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    PDF CMPD1001 CMPD1001A CMPD1001S CMPD1001 OT-23 150oC 100mA L21 marking code CMPD1001S CMPD1001A marking c2 diode

    Untitled

    Abstract: No abstract text available
    Text: BAS29, BAS31, BAS35 Il SILICON PLANAR EPITAXIAL HIGH-SPEED DIODE BAS29 single diode, BAS31 dual diodes in series and BAS35 dual diodes, common anodes. Marking PACKAGE OUTLINE DETAILS ALL DIMENSIONS IN mm BAS2&- L20 BAS31 - L21 BAS35 - L22 _3.0_ 2.8 0.46 w -H


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    PDF BAS29, BAS31, BAS35 BAS29 BAS31 BAS35 BAS31

    Untitled

    Abstract: No abstract text available
    Text: 83633^4 DDDD718 7b4 • BAS29, BAS31, BAS35 SILICON PLANAR EPITAXIAL HIGH-SPEED DIODE BAS29 single diode, BAS31 dual diodes in series and BAS35 dual diodes, common anodes. Marking PACKAGE OUTLINE DETAILS ALL DIMENSIONS IN mm BAS29- L20 BAS31 - L21 BAS35 - L22


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    PDF DDDD718 BAS29, BAS31, BAS35 BAS29 BAS31 BAS35 BAS29-

    Untitled

    Abstract: No abstract text available
    Text: BAS29, BAS31, BAS35 SILICON PLANAR EPITAXIAL HIGH-SPEED DIODE BAS29 single diode, BAS31 dual diodes in series and BÀS35 dual diodes, common anodes. Marking PACKAGE OUTLINE DETAILS ALL DIMENSIONS IN mm BAS29- L20 BAS31 - L21 BAS35 L22 J.O 2.8 0.46 H — H i


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    PDF BAS29, BAS31, BAS35 BAS29 BAS31 BAS29- BAS35 BAS29

    BAS29

    Abstract: BAS31 BAS35 diode 7B4
    Text: • E3A33T4 DDDG716 7b4 ■ BAS29, BAS31, BAS35 SILICON PLANAR EPITAXIAL HIGH-SPEED DIODE BAS29 single diode, BAS31 dual diodes in series and BAS35 dual diodes, common anodes. Marking PACKAGE OUTLINE DETAILS ALL DIMENSIONS IN mm B A S 2 9 - L20 BAS31 - L21


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    PDF D00G716 BAS29, BAS31, BAS35 BAS29 BAS31 BAS35 BAS29- diode 7B4

    BAS31

    Abstract: BAV19 259-C
    Text: BAS31 e? Diserete POWER & Sign al Technologies National Semiconductor“ BAS31 CONNECTION DIAGRAM JH L21 TD— ET SOT-23 High Voltage General Purpose Diode Sourced 'from P rocess 1H. S e e B A V 1 9 / 2 0 / 2 1 for characteristics. Absolute Maximum Ratings*


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    PDF OT-23 BAS31 BAV19 bS01130 BAS31 259-C

    philips twin eye

    Abstract: SOT242 diiode philips "twin eye" laser diode philips
    Text: Philips Components D E V E L O P M E N T DATA CQL21/D This data sheet contains advance information and specifications which are subject to change without notice. SMALL SIZE DOUBLE HETEROSTRUCTURE AIGaAs LASER G E N E R A L D E S C R IP T IO N The C Q L21/D is designed for reading applications such as video/audio disc applications, optical


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    PDF CQL21/D CQL21/D L21/D 100mW philips twin eye SOT242 diiode philips "twin eye" laser diode philips

    MARKING SY SOT23

    Abstract: marking JG SOT-23 L21 marking code marking code LE SOT 23 jg sot23 Diode SY 350
    Text: Central" CMPD1001 CMPD1001A CMPD1001S Semiconductor Corp. DESCRIPTION: The Central Semiconductor CMPD1001 series types are silicon switching diodes manufactured by the epitaxial planar process, designed for applications requiring high current capability. HIGH CURRENT


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    PDF CMPD1001 CMPD1001A CMPD1001S OT-23 CMPD1001A 100ii 13-November MARKING SY SOT23 marking JG SOT-23 L21 marking code marking code LE SOT 23 jg sot23 Diode SY 350

    marking code fs 1 sot 323

    Abstract: R5 MARKING CODE diode l22
    Text: Central“ CMPD1001 CMPD1001A CMPD1001S Semiconductor Corp. SURFACE MOUNT HIGH CURRENT SILICON SWITCHING DIODE DESCRIPTION: The Central Semiconductor CMPD1001 series types are silicon switching diodes manufactured by the epitaxial planar process, designed for


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    PDF CMPD1001 CMPD1001A CMPD1001S OT-23 CMPD1001S OPD1001S marking code fs 1 sot 323 R5 MARKING CODE diode l22

    smd diode marking A7 SOT-23

    Abstract: SMD DIODE A6 t SOT-23 5d smd sot-23 L21 SMD marking codes sot-23 A4 A7 w sot-23 diode SOT89 smd marking A5 sod a4 marking smd diode SOT23 A6 smd diode marking A3 sot23
    Text: SMD SWITCHING DIODES DESCRIPTION • Philips Components diodes for switching applications combine the highest quality standards w ith state-of-the-art production equipm ent to fulfill the need for generic, low-cost devices. These sw itching diodes offer a broad


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    PDF OT-23 OT-143 PMLL4151 PMLL4153 PMLL4446 PMLL4448 OT-223 OT-143 smd diode marking A7 SOT-23 SMD DIODE A6 t SOT-23 5d smd sot-23 L21 SMD marking codes sot-23 A4 A7 w sot-23 diode SOT89 smd marking A5 sod a4 marking smd diode SOT23 A6 smd diode marking A3 sot23

    Untitled

    Abstract: No abstract text available
    Text: Central" CMPD1001 CMPD1001A CMPD1001S Semiconductor Corp. HIGH CURRENT SWITCHING DIODE DESCRIPTION: The CENTRAL SEMICONDUCTOR CMPD1001 series types are silicon switching diodes manufactured by the epitaxial planar process, designed for applications requiring


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    PDF CMPD1001 CMPD1001A CMPD1001S CMPD1001 OT-23

    y51 h 120c

    Abstract: bd124 KT368 BFQ59 Silec Semiconductors BD214 al103 AFY18 bd192 MM1711
    Text: Towers' International Transistor Selector ! o Towers’ International Transistor Selector Specification data for the identification, selection and substitution of transistors by T D Towers, MBE, MA, BSc, C Eng, MIERE Revised Edition U pdate Three London: NEW YORK


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    PDF 500MA 500MA 240MWF 240MWF y51 h 120c bd124 KT368 BFQ59 Silec Semiconductors BD214 al103 AFY18 bd192 MM1711

    YP diode code marking

    Abstract: l21 diode marking L21 marking code
    Text: Central CMPD1001 CMPD1001A CMPD1001S Semiconductor Corp. HIGH CURRENT SWITCHING DIODE DESCRIPTION: The CENTRAL SEM ICONDUCTOR CMPD1001 series types are silicon switching diodes manufactured by the epitaxial planar process, designed for applications requiring


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    PDF CMPD1001 CMPD1001A CMPD1001S OT-23 CMPD1001S 100mA 200mA YP diode code marking l21 diode marking L21 marking code