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    SI510

    Abstract: No abstract text available
    Text: Timing Selector Guide SPRING 2014 HIGH PERFORMANCE CUSTOMIZABLE FREQUENCY FLEXIBILITY 2-WEEK LEAD TIME 2 / C L O C K A N D O S C I L L AT O R S E L E C T O R Timing Solutions Comprehensive — complete portfolio of oscillators, clock generators, clock buffers and jitter attenuators


    Original     		PDF

    OCTALFALC - PEF 22558 E

    Abstract: PEF 22558 E PEF 22558 QuadFALC V1.3 QuadFALC 3.1 QuadFALC Version 3.1 smd marking mp vinetic application schematics P-LBGA-256 PEF22558
    Text: D a t a S h e e t , R e v . 2 . 0 , A p r . 2 00 5 O c t a l F A L C TM O c t a l E 1 / T 1 / J 1 F r a m er a n d L i n e In t e r fa c e C o m p o n en t f o r L o n g- a n d S h o r t - H a u l A p p l i c a t i o ns P E F 22 5 5 8 E , V e r s i on 1 . 1


    Original     		PDF

    Untitled

    Abstract: No abstract text available
    Text: Freescale Semiconductor Technical Data MRF5S21150H Rev. 1, 5/2006 RF Power Field Effect Transistors MRF5S21150HR3 MRF5S21150HSR3 Designed for W- CDMA base station applications with frequencies from 2110 to 2170 MHz. Suitable for TDMA, CDMA and multicarrier amplifier applicat i o n s . To b e u s e d i n C l a s s A B f o r P C N - P C S / c e l l u l a r r a d i o a n d W L L


    Original     		PDF MRF5S21150H MRF5S21150HR3 MRF5S21150HSR3 MRF5S21150HR3

    J294

    Abstract: TAJE226M035R 465B AN1955 MRF5S21150HR3 MRF5S21150HSR3 j246
    Text: Freescale Semiconductor Technical Data MRF5S21150H Rev. 1, 5/2006 RF Power Field Effect Transistors MRF5S21150HR3 MRF5S21150HSR3 Designed for W- CDMA base station applications with frequencies from 2110 to 2170 MHz. Suitable for TDMA, CDMA and multicarrier amplifier applicat i o n s . To b e u s e d i n C l a s s A B f o r P C N - P C S / c e l l u l a r r a d i o a n d W L L


    Original     		PDF MRF5S21150H MRF5S21150HR3 MRF5S21150HSR3 MRF5S21150HR3 J294 TAJE226M035R 465B AN1955 MRF5S21150HSR3 j246

    J1103

    Abstract: J294 MRF5S21150H MRF5S21150HR3 MRF5S21150HSR3 TAJE226M035R 465B AN1955 J966
    Text: Freescale Semiconductor Technical Data MRF5S21150H Rev. 1, 5/2006 RF Power Field Effect Transistors N - Channel Enhancement - Mode Lateral MOSFETs MRF5S21150HR3 MRF5S21150HSR3 Designed for W- CDMA base station applications with frequencies from 2110 to 2170 MHz. Suitable for TDMA, CDMA and multicarrier amplifier applicat i o n s . To b e u s e d i n C l a s s A B f o r P C N - P C S / c e l l u l a r r a d i o a n d W L L


    Original     		PDF MRF5S21150H MRF5S21150HR3 MRF5S21150HSR3 MRF5S21150HR3 J1103 J294 MRF5S21150H MRF5S21150HSR3 TAJE226M035R 465B AN1955 J966

    Untitled

    Abstract: No abstract text available
    Text: MRF6P21190HR6 Rev. 1, 1/2005 Freescale Semiconductor Technical Data RF Power Field Effect Transistor N - Channel Enhancement - Mode Lateral MOSFET MRF6P21190HR6 Designed for W- CDMA base station applications with frequencies from 2110 to 2170 MHz. Suitable for TDMA, CDMA and multicarrier amplifier applicat i o n s . To b e u s e d i n C l a s s A B f o r P C N - P C S / c e l l u l a r r a d i o a n d W L L


    Original     		PDF MRF6P21190HR6 MRF6P21190HR6

    Untitled

    Abstract: No abstract text available
    Text: MRF5S21100H Rev. 2, 1/2005 Freescale Semiconductor Technical Data RF Power Field Effect Transistors N - Channel Enhancement - Mode Lateral MOSFETs MRF5S21100HR3 MRF5S21100HSR3 Designed for W- CDMA base station applications with frequencies from 2110 to 2170 MHz. Suitable for TDMA, CDMA and multicarrier amplifier applicat i o n s . To b e u s e d i n C l a s s A B f o r P C N - P C S / c e l l u l a r r a d i o a n d W L L


    Original     		PDF MRF5S21100H MRF5S21100HR3 MRF5S21100HSR3

    MRF5S21130H

    Abstract: 465B AN1955 MRF5S21130HR3 MRF5S21130HSR3
    Text: Freescale Semiconductor Technical Data MRF5S21130H Rev. 3, 5/2006 RF Power Field Effect Transistors N - Channel Enhancement - Mode Lateral MOSFETs MRF5S21130HR3 MRF5S21130HSR3 Designed for W - CDMA base station applications at frequencies from 2110 to 2170 MHz. Suitable for TDMA, CDMA and multicarrier amplifier applicat i o n s . To b e u s e d i n C l a s s A B f o r P C N - P C S / c e l l u l a r r a d i o a n d W L L


    Original     		PDF MRF5S21130H MRF5S21130HR3 MRF5S21130HSR3 MRF5S21130HR3 MRF5S21130H 465B AN1955 MRF5S21130HSR3

    k 2645 MOSFET

    Abstract: K 2645 transistor NIPPON CAPACITORS transistor d 2645 z33 vishay A114 A115 AN1955 C101 JESD22
    Text: Freescale Semiconductor Technical Data MRF6P27160H Rev. 0, 1/2005 RF Power Field Effect Transistor N - Channel Enhancement - Mode Lateral MOSFET Designed for N - CDMA base station applications with frequencies from 2600 to 2700 MHz. Suitable for TDMA, CDMA and multicarrier amplifier applicat i o n s . To b e u s e d i n C l a s s A B f o r P C N - P C S / c e l l u l a r r a d i o a n d W L L


    Original     		PDF MRF6P27160H MRF6P27160HR6 k 2645 MOSFET K 2645 transistor NIPPON CAPACITORS transistor d 2645 z33 vishay A114 A115 AN1955 C101 JESD22

    Untitled

    Abstract: No abstract text available
    Text: Freescale Semiconductor Technical Data Rev. 0, 1/2005 RF Power Field Effect Transistors N - Channel Enhancement - Mode Lateral MOSFETs MRF5S21150HR3 MRF5S21150HSR3 Designed for W- CDMA base station applications with frequencies from 2110 to 2170 MHz. Suitable for TDMA, CDMA and multicarrier amplifier applicat i o n s . To b e u s e d i n C l a s s A B f o r P C N - P C S / c e l l u l a r r a d i o a n d W L L


    Original     		PDF MRF5S21150HR3 MRF5S21150HSR3

    A113

    Abstract: A114 A115 AN1955 C101 JESD22 MRF5S21045NBR1 MRF5S21045NR1 MRF5S21045N
    Text: Freescale Semiconductor Technical Data Document Number: MRF5S21045N Rev. 4, 10/2008 RF Power Field Effect Transistors N - Channel Enhancement - Mode Lateral MOSFETs Designed for W - CDMA base station applications with frequencies from 2110 to 2170 MHz. Suitable for TDMA, CDMA and multicarrier amplifier applicat i o n s . To b e u s e d i n C l a s s A B f o r P C N - P C S / c e l l u l a r r a d i o a n d W L L


    Original     		PDF MRF5S21045N MRF5S21045NR1 MRF5S21045NBR1 A113 A114 A115 AN1955 C101 JESD22 MRF5S21045NBR1 MRF5S21045N

    A114

    Abstract: A115 AN1955 C101 JESD22 MRF6P21190HR6 RFZ24
    Text: Freescale Semiconductor Technical Data Document Number: MRF6P21190HR6 Rev. 3, 5/2006 RF Power Field Effect Transistor N - Channel Enhancement - Mode Lateral MOSFET MRF6P21190HR6 Designed for W- CDMA base station applications with frequencies from 2110 to 2170 MHz. Suitable for TDMA, CDMA and multicarrier amplifier applicat i o n s . To b e u s e d i n C l a s s A B f o r P C N - P C S / c e l l u l a r r a d i o a n d W L L


    Original     		PDF MRF6P21190HR6 A114 A115 AN1955 C101 JESD22 MRF6P21190HR6 RFZ24

    MRF5S21130H

    Abstract: 465B AN1955 MRF5S21130HR3 MRF5S21130HSR3
    Text: Freescale Semiconductor Technical Data MRF5S21130H Rev. 2, 1/2005 RF Power Field Effect Transistors N - Channel Enhancement - Mode Lateral MOSFETs MRF5S21130HR3 MRF5S21130HSR3 Designed for W - CDMA base station applications at frequencies from 2110 to 2170 MHz. Suitable for TDMA, CDMA and multicarrier amplifier applicat i o n s . To b e u s e d i n C l a s s A B f o r P C N - P C S / c e l l u l a r r a d i o a n d W L L


    Original     		PDF MRF5S21130H MRF5S21130HR3 MRF5S21130HSR3 MRF5S21130HR3 MRF5S21130H 465B AN1955 MRF5S21130HSR3

    A113

    Abstract: A114 A115 AN1955 C101 JESD22 MRF6S21060NBR1 MRF6S21060NR1 ipc 610 Class 3 100B4R7CW
    Text: Freescale Semiconductor Technical Data Document Number: MRF6S21060N Rev. 3, 5/2006 RF Power Field Effect Transistors N - Channel Enhancement - Mode Lateral MOSFETs Designed for W- CDMA base station applications with frequencies from 2110 to 2170 MHz. Suitable for TDMA, CDMA and multicarrier amplifier applicat i o n s . To b e u s e d i n C l a s s A B f o r P C N - P C S / c e l l u l a r r a d i o a n d W L L


    Original     		PDF MRF6S21060N MRF6S21060NR1 MRF6S21060NBR1 A113 A114 A115 AN1955 C101 JESD22 MRF6S21060NBR1 ipc 610 Class 3 100B4R7CW

    465B

    Abstract: A114 AN1955 JESD22 MRF6S21140H MRF6S21140HR3 MRF6S21140HSR3
    Text: Freescale Semiconductor Technical Data Document Number: MRF6S21140H Rev. 3, 5/2006 RF Power Field Effect Transistors N - Channel Enhancement - Mode Lateral MOSFETs Designed for W- CDMA base station applications with frequencies from 2110 to 2170 MHz. Suitable for TDMA, CDMA and multicarrier amplifier applicat i o n s . To b e u s e d i n C l a s s A B f o r P C N - P C S / c e l l u l a r r a d i o a n d W L L


    Original     		PDF MRF6S21140H MRF6S21140HR3 MRF6S21140HSR3 465B A114 AN1955 JESD22 MRF6S21140H MRF6S21140HSR3

    MRF5S21130H

    Abstract: No abstract text available
    Text: Freescale Semiconductor Technical Data MRF5S21130H Rev. 3, 5/2006 RF Power Field Effect Transistors N - Channel Enhancement - Mode Lateral MOSFETs MRF5S21130HR3 MRF5S21130HSR3 Designed for W - CDMA base station applications at frequencies from 2110 to 2170 MHz. Suitable for TDMA, CDMA and multicarrier amplifier applicat i o n s . To b e u s e d i n C l a s s A B f o r P C N - P C S / c e l l u l a r r a d i o a n d W L L


    Original     		PDF MRF5S21130H MRF5S21130HR3 MRF5S21130HSR3 MRF5S21130HR3 MRF5S21130H

    T491C105K0

    Abstract: mcr63v470m8x11 MRF6S19120H
    Text: Freescale Semiconductor Technical Data MRF6S19120H Rev. 0, 2/2005 RF Power Field Effect Transistors N - Channel Enhancement - Mode Lateral MOSFETs Designed for N - CDMA base station applications with frequencies from 1930 to 1990 MHz. Suitable for TDMA, CDMA and multicarrier amplifier applicat i o n s . To b e u s e d i n C l a s s A B f o r P C N - P C S / c e l l u l a r r a d i o a n d W L L


    Original     		PDF MRF6S19120H MRF6S19120HR3 MRF6S19120HSR3 T491C105K0 mcr63v470m8x11

    mrf6s21140hs

    Abstract: mrf6s21 100B0R2B MRF6S21140H 1812Y224
    Text: Freescale Semiconductor Technical Data MRF6S21140H Rev. 2, 1/2005 RF Power Field Effect Transistors N - Channel Enhancement - Mode Lateral MOSFETs Designed for W- CDMA base station applications with frequencies from 2110 to 2170 MHz. Suitable for TDMA, CDMA and multicarrier amplifier applicat i o n s . To b e u s e d i n C l a s s A B f o r P C N - P C S / c e l l u l a r r a d i o a n d W L L


    Original     		PDF MRF6S21140H MRF6S21140HR3 MRF6S21140HSR3 mrf6s21140hs mrf6s21 100B0R2B 1812Y224

    Untitled

    Abstract: No abstract text available
    Text: Freescale Semiconductor Technical Data Rev. 1, 12/2004 RF Power Field Effect Transistors N - Channel Enhancement - Mode Lateral MOSFETs MRF6S19100HR3 MRF6S19100HSR3 Designed for N - CDMA base station applications with frequencies from 1930 to 1990 MHz. Suitable for TDMA, CDMA and multicarrier amplifier applicat i o n s . To b e u s e d i n C l a s s A B f o r P C N - P C S / c e l l u l a r r a d i o a n d W L L


    Original     		PDF MRF6S19100HR3 MRF6S19100HSR3

    95F4579

    Abstract: Resistor mttf mrf5s21090
    Text: Freescale Semiconductor Technical Data Rev. 1, 12/2004 RF Power Field Effect Transistors N - Channel Enhancement - Mode Lateral MOSFETs MRF5S21090HR3 MRF5S21090HSR3 Designed for W- CDMA base station applications with frequencies from 2110 to 2170 MHz. Suitable for TDMA, CDMA and multicarrier amplifier applicat i o n s . To b e u s e d i n C l a s s A B f o r P C N - P C S / c e l l u l a r r a d i o a n d W L L


    Original     		PDF MRF5S21090HR3 MRF5S21090HSR3 95F4579 Resistor mttf mrf5s21090

    CF596

    Abstract: CF593 CF689HV CF599 1978 Data catalog C-717X cf595 cf 595 CF598 C-685D
    Text: I Ei ¡ M I C R O L J E L E C T R O N IC S 1978 DATA CATALOG GENERAL IN S T R U M E N T C O R P O R A T IO N • M IC R O E L E C T R O N IC S SS.00 C/CF-580 SERIES C/CF-590 SERIES C/CF-680 SERIES GENERAL INFORMATION Display Calculator Circuits FEATURES PIN CONFIGURATION


    OCR Scan     		PDF C/CF-580 C/CF-590 C/CF-680 C-16XXD) C-719 CF596 CF593 CF689HV CF599 1978 Data catalog C-717X cf595 cf 595 CF598 C-685D

    Untitled

    Abstract: No abstract text available
    Text: MOTOROLA CMOS MSI B C D -T O -S E V E N S E G M E N T L A T C H /D E C O D E R /D R IV E R F O R L IQ U ID C R Y S T A L S «LOW-POWER C O M P L E M E N T A R Y MOS B C D -T O -S E V E N S E G M E N T L A T C H /D E C O D E R /D R IV E R W IT H R fP P LE B L A N K IN G


    OCR Scan     		PDF MC14544B Ph4544B 14544B 14544B

    Untitled

    Abstract: No abstract text available
    Text: A L U M IN U M E L E C T R O L Y T IC C A PA C IT O R S [ For Super Miniature ] 105 C Single-Ended Lead A lum inum E le c tro lytic C ap a cito rs ELECTRICAL CHARACTERISTICS Working Voltage : 6.3 ~ 63V Operating Temperature : -40° ~ + I05°C Rate Capacitance Range : 0 .1 - 220pF


    OCR Scan     		PDF 220pF

    MC14547

    Abstract: MC14544B MC14XXXBCP MSI IC decoder MC145448 MC14544 MC145445 sj 6387
    Text: * MOTOROLA MC14544B CMOS MSI BCD-TO-SEVEN SEGMENT L A T C H /D E C O D E R /D R IV E R FOR L IQ U ID CRYSTALS L O W P O W £ R C O M P L E M E N T A R Y MOS5 BCD-TO-SEVEN SEGMENT LA T C H /D E C O D E R /D R IV E R W IT H RIPPLE B L A N K IN G The M C145448 BCD-to-seven segment latch/decoder/driver Is .


    OCR Scan     		PDF MC14544B MC145448 MC14547 MC14544B MC14XXXBCP MSI IC decoder MC14544 MC145445 sj 6387