Please enter a valid full or partial manufacturer part number with a minimum of 3 letters or numbers

    L-BAND RF MOSFET Search Results

    L-BAND RF MOSFET Result Highlights (5)

    Part ECAD Model Manufacturer Description Download Buy
    MG800FXF1JMS3 Toshiba Electronic Devices & Storage Corporation N-ch SiC MOSFET Module, 3300 V, 800 A, iXPLV, High-side: SiC SBD、Low-side: SiC MOSFET Visit Toshiba Electronic Devices & Storage Corporation
    TK190U65Z Toshiba Electronic Devices & Storage Corporation MOSFET, N-ch, 650 V, 15 A, 0.19 Ohm@10V, TOLL Visit Toshiba Electronic Devices & Storage Corporation
    TK7R0E08QM Toshiba Electronic Devices & Storage Corporation MOSFET, N-ch, 80 V, 64 A, 0.0070 Ohm@10V, TO-220AB Visit Toshiba Electronic Devices & Storage Corporation
    XPJ1R004PB Toshiba Electronic Devices & Storage Corporation N-ch MOSFET, 40 V, 160 A, 0.001 Ω@10V, S-TOGL Visit Toshiba Electronic Devices & Storage Corporation
    TK4K1A60F Toshiba Electronic Devices & Storage Corporation MOSFET, N-ch, 600 V, 2.0 A, 4.1 Ohm@10V, TO-220SIS Visit Toshiba Electronic Devices & Storage Corporation

    L-BAND RF MOSFET Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    Untitled

    Abstract: No abstract text available
    Text: Part Number: Integra ILD1214L250 TECHNOLOGIES, INC. L-Band RF Power LDMOS Transistor Silicon LDMOS − High Power Gain − Superior thermal stability The high power pulsed transistor part number ILD1214L250 is designed for L-Band systems operating at 1.2–1.4 GHz. Operating at a pulse width of 1ms with


    Original     		PDF ILD1214L250 ILD1214L250 ILD1214L250-REV-NC-DS-REV-A

    2SK3074

    Abstract: No abstract text available
    Text: 2SK3074 TOSHIBA FIELD EFFECT TRANSISTOR SILICON N CHANNEL MOS TYPE 2SK3074 RF POWER MOSFET FOR VHF−AND UHF-BAND POWER AMPLIFIER l Output Power : PO ≥ 630mW l Power Gain : GP ≥ 14.9dB l Drain Efficiency : ηD ≥ 45% Unit in mm MAXIMUM RATINGS Ta = 25°C


    Original     		PDF 2SK3074 630mW SC-62 2SK3074

    Tda 1026

    Abstract: FAF 45 DIODE SMD TOKO 10.7MHz filter wide FM stereo MPX Decoder upc 1026 SFE10,7 TDA am/fm TOKO 10.7MHz 7511 AUDIO AMPLIFIER CIRCUIT DIAGRAM tda audio vs 50v
    Text: TDA7511 AM/FM TUNER FOR CAR RADIO AND HIFI APPLICATIONS FM-PART • RF AGC GENERATION BY RF AND IF DETECTION FOR PIN DIODES AND MOSFET PRESTAGE ■ 1ST MIXER FOR 1ST FM IF 10.7MHz WITH PROGRAMMABLE IF TANK ADJUST FOR FM AND AM UPCONVERSION ■ 2 PROGRAMMABLE IF-GAIN STAGES


    Original     		PDF TDA7511 450KHz TQFP64 Tda 1026 FAF 45 DIODE SMD TOKO 10.7MHz filter wide FM stereo MPX Decoder upc 1026 SFE10,7 TDA am/fm TOKO 10.7MHz 7511 AUDIO AMPLIFIER CIRCUIT DIAGRAM tda audio vs 50v

    Untitled

    Abstract: No abstract text available
    Text: TDA7511 AM/FM TUNER FOR CAR RADIO AND HIFI APPLICATIONS FM-PART • RF AGC GENERATION BY RF AND IF DETECTION FOR PIN DIODES AND MOSFET PRESTAGE ) s ( t c u d o ) r s ( P t c e t u e d l o o r s P b e O t e l ) o s ( s t b c u O d o ) r s P ( t c e t u e


    Original     		PDF TDA7511 450KHz

    WB1 SOT23

    Abstract: transistor WB1 100B100JW TLX8-0300 capacitor 30 mf WB2 SOT23 08053G105ZATEA 100B4R7BW
    Text: MOTOROLA SEMICONDUCTOR TECHNICAL DATA The RF Sub–Micron MOSFET Line MRF9080 MRF9080R3 MRF9080SR3 MRF9080LSR3 RF Power Field Effect Transistors N–Channel Enhancement–Mode Lateral MOSFETs Designed for GSM 900 MHz frequency band, the high gain and broadband


    Original     		PDF MRF9080 MRF9080R3 MRF9080SR3 MRF9080LSR3 WB1 SOT23 transistor WB1 100B100JW TLX8-0300 capacitor 30 mf WB2 SOT23 08053G105ZATEA 100B4R7BW

    WB1 SOT23

    Abstract: WB2 SOT23
    Text: MOTOROLA SEMICONDUCTOR TECHNICAL DATA The RF Sub–Micron MOSFET Line MRF9080 MRF9080R3 MRF9080S MRF9080SR3 MRF9080LSR3 RF Power Field Effect Transistors N–Channel Enhancement–Mode Lateral MOSFETs Designed for GSM 900 MHz frequency band, the high gain and broadband


    Original     		PDF MRF9080 MRF9080R3 MRF9080S MRF9080SR3 MRF9080LSR3 WB1 SOT23 WB2 SOT23

    AGRC10GM

    Abstract: JESD22-C101A mosfet 6 ghz z823 1661 mhz
    Text: Preliminary Data Sheet November 2004 AGRC10GM 10 W, 2.1 GHz, N-Channel E-Mode, Lateral MOSFET Introduction 1930 MHz to 1990 MHz PCS The AGRC10GM (1.0 GHz to 2.1 GHz) is a broadband general-purpose, high-voltage, gold-metalized, laterally diffused metal oxide semiconductor


    Original     		PDF AGRC10GM AGRC10GM DS04-260RFPP JESD22-C101A mosfet 6 ghz z823 1661 mhz

    0805 capacitor 10 pf

    Abstract: No abstract text available
    Text: Freescale Semiconductor Technical Data Rev. 5, 12/2004 RF Power Field Effect Transistors N - Channel Enhancement - Mode Lateral MOSFETs Designed for GSM 900 MHz frequency band, the high gain and broadband performance of these devices make them ideal for large - signal, common source amplifier applications in 26 volt base station equipment.


    Original     		PDF MRF9080LR3 MRF9080LSR3 0805 capacitor 10 pf

    0203S

    Abstract: AGRA10XM JESD22-C101A J162 j507 MOSFET J147
    Text: Preliminary Data Sheet April 2004 AGRA10XM 10 W, 100 MHz—1.0 GHz, N-Channel E-Mode, Lateral MOSFET Introduction Performance Features The AGRA10 is a broadband general-purpose, highvoltage, gold-metalized, laterally diffused metal oxide semiconductor LDMOS RF power transistor suitable for Nordic Mobile Telephone (NMT) 460 MHz


    Original     		PDF AGRA10XM AGRA10 IS-95 DS04-139RFPP DS03-127RFPP) 0203S AGRA10XM JESD22-C101A J162 j507 MOSFET J147

    300w fm amplifier

    Abstract: FM300-75 300w amplifier 300w power amplifier RF GAIN LTD 300w rf amplifier "RF MOSFET" 300W H101X FM Amplifier 300w
    Text: FM300-75 300W - OIRT Band FM Power Amplifier Designed for FM radio transposers and transmitters, this amplifier incorporates microstrip technology and MOSFET transistors to enhance ruggedness and reliability. • • • • • • 60 - 75 MHz 48 Volts Input/Output 50 Ω


    Original     		PDF FM300-75 Fr300W 40W267 300w fm amplifier FM300-75 300w amplifier 300w power amplifier RF GAIN LTD 300w rf amplifier "RF MOSFET" 300W H101X FM Amplifier 300w

    Untitled

    Abstract: No abstract text available
    Text: MOTOROLA Available at: Available at http://www.motorola.com/rf, Go to Tools SEMICONDUCTOR TECHNICAL DATA RF Reference Design Library The RF Sub–Micron MOSFET Line RF Power Field-Effect Transistors N–Channel Enhancement–Mode Lateral MOSFETs DEVICE CHARACTERISTICS From Device Data Sheet


    Original     		PDF MRF5S21150 MRF5S21150R3 MRF5S21150S MRF5S21150SR3 RDMRF5S21150UMTS

    Untitled

    Abstract: No abstract text available
    Text: ADVANCED POW ER Te c h n o l o g y • ARF442 200W 100V 13.56MHz ARF443 200W 100V 13.56MHz THE ARF442 PIN-OUTS ARE MIRROR IMAGE OF THE ARF443. RF OPERATION 1-15MHz POWER MOS IV« N -CHANNEL ENHANCEMENT MODE RF POWER MOSFET_ The ARF442 and ARF443 comprise a symmetric pair of RF power transistors designed for narrow-band push-pull


    OCR Scan     		PDF ARF442 56MHz ARF443 ARF443. 1-15MHz)

    TRANSISTOR BC 136

    Abstract: TRANSISTOR SOT-23 marking JE
    Text: TELEFUNKEN ELECTRONIC fllC P • a^HDO^b 0005301 b B A L G G BFR 96 M electronic T 'J /-U Creative Technologies Silicon NPN Planar RF Transistor Applications: RF-ampllfier up to GHz range specially for wide band antenna amplifier Features: • High power gain


    OCR Scan     		PDF JEDECTO50 569-GS TRANSISTOR BC 136 TRANSISTOR SOT-23 marking JE

    ARF442

    Abstract: Class B power amplifier, 13.56MHz 13.56mhz class e power amplifier
    Text: ADVANCED PO W ER Te c h n o l o g y ARF442 200W 100V 13.56MHz ARF443 200W 100V 13.56MHz THE ARF442 PIN-OUTS ARE MIRROR IMAGE OF THE ARF443. RF OPERATION 1-15MHz POWER MOS IV« N -C H A NN EL ENHANCEMENT MODE RF POWER MOSFET The ARF442 and ARF443 comprise a symmetric pair of RF power transistors designed for narrow-band push-pull


    OCR Scan     		PDF ARF442 56MHz ARF443 56MHz ARF443. 1-15MHz) Class B power amplifier, 13.56MHz 13.56mhz class e power amplifier

    s791

    Abstract: transistor B 722
    Text: TELEFUNKEN ELECTRONIC T lt U M IM iN l electronic filC D • ÛTBÜG^b 0005437 *3 X -J/-/ r S 79! T Creativo Technotogìes Silicon NPN Planar RF Transistor Applications: RF-amplifier up to GHz range specially for wide band antenna amplifier Feature*: • High power gain


    OCR Scan     		PDF 569-GS s791 transistor B 722

    13.56mhz power

    Abstract: power amplifier, 13.56MHz ARF440
    Text: ADVANCED POW ER Te c h n o l o g y ARF440 ARF441 125W 50V 13.56MHz 125W 50V 13.56MHz THE ARF440 PIN-OUTS ARE MIRROR IMAGE OF THE ARF441. RF OPERATION 1-15MHz POWER MOS IV* N -C H A NN EL ENHANCEMENT MODE RF POWER MOSFET ;- if>!EÜ I Æ The ARF440 and ARF441 comprise a symmetric pair of RF power transistors designed for narrow-band push-pull


    OCR Scan     		PDF ARF440 ARF441 56MHz 56MHz ARF441. 1-15MHz) 13.56mhz power power amplifier, 13.56MHz ARF440

    d3008

    Abstract: Class E power amplifier, 13.56MHz 13.56Mhz class e power amplifier k 1356 class e and 13.56MHz
    Text: A d v a n ced P o w er Te c h n o l o g y * ARF442 200W 100V 13.56MHz ARF443 200W 100V 13.56MHz THE ARF442 PIN-OUTS ARE MIRROR IMAGE OF THE ARF443. Pi F OPERATION 1-15MHz POWER MOS IV N -C H A N N EL ENHANCEMENT MODE RF POWER MOSFET P f& Q M M The ARF442 and ARF443 comprise a symmetric pair of RF power transistors designed for narrow-band push-pull


    OCR Scan     		PDF ARF442 56MHz ARF443 56MHz ARF443. 1-15MHz) d3008 Class E power amplifier, 13.56MHz 13.56Mhz class e power amplifier k 1356 class e and 13.56MHz

    2N4427 equivalent bfr91

    Abstract: bfr90 equivalent 2N5503 MRA1600-30 TPV-595A 2N3553 equivalent MRF477 equivalent MRA0500-19L 2N6084 equivalent MOTOROLA TRANSISTOR MRF239
    Text: RF Power TMOS FETs Motorola RF Power MOSFETs, trademark TMOS , are constructed using a planar process to enhance manufacturing repeatability. They are N-channet field effect transistors with an oxide insulated gate which controls vertical current flow. Compared with bipolar transistors, RF Power FETs exhibit higher gain, higher input impedance, enhanced therm al stability


    OCR Scan     		PDF PoweS3666 MRF3866 2N2857 2N3866 2N5943 MRF904 MRF571 2N4958 2N3160 2N5583 2N4427 equivalent bfr91 bfr90 equivalent 2N5503 MRA1600-30 TPV-595A 2N3553 equivalent MRF477 equivalent MRA0500-19L 2N6084 equivalent MOTOROLA TRANSISTOR MRF239

    BC847

    Abstract: LP2951 MRF6522-70 MRF6522-70R3
    Text: MOTOROLA O rder this docum ent by M RF6522—70/D SEMICONDUCTOR TECHNICAL DATA The RF MOSFET Line M RF6522-70 M RF6522-70R3 RF Pow er Field E ffect Transistors N-Channel Enhancement-Mode Lateral MOSFETs D e s ig n e d fo r G S M 9 0 0 fre q u e n c y b a n d , th e h igh g a in and b ro a d b a n d


    OCR Scan     		PDF RF6522â MRF6522-70 MRF6522-70R3 MRF6522â BC847 LP2951 MRF6522-70R3

    smd mosfet z8

    Abstract: BC847 LP2951 MRF18090A MRF18090AS BC847 SOT23
    Text: MOTOROLA O rder this docum ent by M RF18090A/D SEMICONDUCTOR TECHNICAL DATA The RF MOSFET Line M R F18090A M R F18090A S RF P o w e r F ield E ffe c t T ra n s is to rs N-Channel Enhancement-Mode Lateral MOSFETs Designed for GSM and EDGE base station applications from frequencies up


    OCR Scan     		PDF MRF18090A/D 465B-02 465C-01 MRF18090A MRF18090AS smd mosfet z8 BC847 LP2951 MRF18090AS BC847 SOT23

    BC847 SOT-23 PACKAGE 0805

    Abstract: transistor J585 sot-23 C6 bc847 sot 23 T1BC847 BC847 LP2951 MRF18090B MRF18090BS bc847 chip
    Text: MOTOROLA O rder this docum ent by M RF18090B/D SEMICONDUCTOR TECHNICAL DATA The RF MOSFET Line M R F18090B M R F18090B S RF P o w e r F ield E ffe c t T ra n s is to rs N-Channel Enhancement-Mode Lateral MOSFETs Designed for GSM and EDGE base station applications from frequencies up


    OCR Scan     		PDF RF18090 465B-02 465C-01 MRF18090B MRF18090BS BC847 SOT-23 PACKAGE 0805 transistor J585 sot-23 C6 bc847 sot 23 T1BC847 BC847 LP2951 MRF18090BS bc847 chip

    NEC MOSFET PUSHPULL

    Abstract: No abstract text available
    Text: High Power N-Channel Silicon NEM0899F01-30 MOSFET For Broadcast / Transmitters OUTLINE DIMENSIONS FEATURES_ Units in mm • HIGH OUTPUT POWER: 100 Watts • HIGH GAIN: PACKAGE OUTLINE F01 Linear Gain = 12 dB • LOW INTERMODULATION DISTORTION


    OCR Scan     		PDF NEM0899F01-30 NEC MOSFET PUSHPULL

    MAR 544 MOSFET TRANSISTOR

    Abstract: J 6920 FET MAR 740 MOSFET TRANSISTOR LA 7814 RD70HVF 7907 mitsubishi RD70HVF1 7386 mos transistor d 2689 MOSFET 2095 transistor
    Text: ATTENTION OBSERVE PRECAUTIONS FOR HANDLING Revision date:4th/Mar/02 MITSUBISHI RF POWER MOS FET ELHTROSTATIC SENSITIVE DEVICES RD70HVF1 Silicon MOSFET Power Transistor,! 75MHz70W 520MHz50W DESCRIPTION OUTLINE DRAWING RD70HVF1 is a MOS FET type transistor specifically


    OCR Scan     		PDF 4th/Mar/02 RD70HVF1 75MHz70W 520MHz50W RD70HVF1 175MHz 520MHz MAR 544 MOSFET TRANSISTOR J 6920 FET MAR 740 MOSFET TRANSISTOR LA 7814 RD70HVF 7907 mitsubishi 7386 mos transistor d 2689 MOSFET 2095 transistor

    Untitled

    Abstract: No abstract text available
    Text: M OTOROLA SEMICONDUCTOR TECHNICAL DATA The RF MOSFET Line RF Power Field-Effect Transistor N-Channel Enhancement-Mode Designed primarily for linear large-signal output stages up to 150 MHz frequency range. • Specified 28 Volts, 30 MHz Characteristics Output Power = 150 Watts


    OCR Scan     		PDF