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    KU 602 Price and Stock

    AMD XCKU060-2FFVA1156I

    FPGA - Field Programmable Gate Array XCKU060-2FFVA1156I
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    Mouser Electronics XCKU060-2FFVA1156I 3
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    AMD XCKU060-2FFVA1517E

    FPGA - Field Programmable Gate Array XCKU060-2FFVA1517E
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    Mouser Electronics XCKU060-2FFVA1517E 2
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    AMD XCKU060-2FFVA1517I

    FPGA - Field Programmable Gate Array XCKU060-2FFVA1517I
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    Mouser Electronics XCKU060-2FFVA1517I 2
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    AMD XCKU060-2FFVA1156E

    FPGA - Field Programmable Gate Array XCKU060-2FFVA1156E
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    Mouser Electronics XCKU060-2FFVA1156E
    • 1 $4600.91
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    TE Connectivity EKUB202NN00320602000

    Standard Circular Connector 915 EXTENSION
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    Mouser Electronics EKUB202NN00320602000
    • 1 $24.45
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    KU 602 Datasheets (4)

    Part ECAD Model Manufacturer Description Curated Datasheet Type PDF
    KU602 Unknown Cross Reference Datasheet Scan PDF
    KU602 Unknown Shortform IC and Component Datasheets (Plus Cross Reference Data) Short Form PDF
    KU602 Unknown Shortform Data and Cross References (Misc Datasheets) Short Form PDF
    KU602 Tesla Transistor Scan PDF

    KU 602 Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    antenna vsc-1

    Abstract: Feed horn
    Text: PUBLICATION Type ESA24SNG-LTE 2.4-Meter Vehicle Mountable Fully-lntegrated, Variable Speed Rx/Tx Earth Station Antenna Mechanical Electrical Operating Frequency Band Ku-Band Receive 10.95-12.75 GHz Ku-Band Transmit 14.0-14.5 GHz Gain at circular waveguide flange of feed


    Original     		PDF ESA24SNG-LTE 153rd SP50193-A antenna vsc-1 Feed horn

    vfc 1

    Abstract: VFC1 "variable frequency drive"
    Text: PUBLICATION Type ESA24SNG-LTE 2.4-Meter Vehicle Mountable Fully-lntegrated, Variable Speed Rx/Tx Earth Station Antenna Mechanical Electrical Operating Frequency Band Ku-Band Receive 10.95-12.75 GHz Ku-Band Transmit 14.0-14.5 GHz Gain at circular waveguide flange of feed


    Original     		PDF ESA24SNG-LTE 153rd SP50193-B vfc 1 VFC1 "variable frequency drive"

    Dielectric Resonator Oscillator DRO

    Abstract: krad ku-band oscillator dielectric resonator oscillator dro 10 ghz pyro OSCILLATOR STC
    Text: X, Ku-BAND DIELECTRIC RESONATOR OSCILLATOR DRO VOLTAGE TUNED PRODUCT FEATURES • Designed, qualified and flight proven in LEO satellite applications • High stability HIGHLIGHTS Designed and flight proven for Space environments (LEO) • Low phase noise performance in the


    Original     		PDF 75imensions 4000G Dielectric Resonator Oscillator DRO krad ku-band oscillator dielectric resonator oscillator dro 10 ghz pyro OSCILLATOR STC

    UTC-300

    Abstract: EMM5075 SUMITOMO 1033 UTC 1316 amplifier power amplifier mmic UTC 1316 sumitomo 131 datasheet AD-2-38LB20 power amplifier tone control
    Text: EMM5075X Ku-Band Power Amplifier MMIC FEATURES ・High Output Power: Pout=33.0dBm typ. ・High Linear Gain: GL=26.0dB (typ.) ・Broad Band: 12.7~15.4GHz ・Impedance Matched Zin/Zout=50Ω DESCRIPTION The EMM5075X is a MMIC amplifier that contains a three-stages


    Original     		PDF EMM5075X EMM5075X UTC-300 EMM5075 SUMITOMO 1033 UTC 1316 amplifier power amplifier mmic UTC 1316 sumitomo 131 datasheet AD-2-38LB20 power amplifier tone control

    Untitled

    Abstract: No abstract text available
    Text: SII Group Social and Environmental Report 2008 Striving for Coexistence with Society and Harmony with the Earth Corporate Environmental Administration Department 8, Nakase 1-chome, Mihama-ku, Chiba-shi, Chiba 261-8507, Japan Telephone : +81-43-211-1111/Direct: +81-43-211-1149


    Original     		PDF 81-43-211-1111/Direct: SGS-COC-2956

    JIS B 0405 tolerance

    Abstract: No abstract text available
    Text: DOCUMENT NUMBER ACS-1DC1-01 SMU-2A Series MU VERTICAL DUPLEX ADAPTOR TECHNICAL SPECIFICATIONS Seiko Instruments Inc. Network Components Business 8, Nakase 1-Chome Mihama-ku, Chiba-shi, Chiba-ken 261-8507 JAPAN Telephone: +81-43-211-1211 Facsimile: +81-43-211-8039


    Original     		PDF ACS-1DC1-01 ACS-1DC1-01 JIS B 0405 tolerance

    transistor BU 102S

    Abstract: fgt313 stp 10n40 SLA4052 BU 102S c4381 high voltage 3-phase motor driver ic RELAY sz - 2103 12V C5100 MOSFET SLA5096
    Text: SEMICONDUCTORS GENERAL CATALOG 2010 Sanken Electric Co., Ltd. Overseas Sales Headquarters Metropolitan Plaza Building, 1-11-1 Nishi-Ikebukuro Toshima-ku, Tokyo 171-0021, Japan Te l : 81-3-3986-6164 Fax: 81-3-3986-8637 WORLDWIDE SALES OFFICES Asia-Pacific China


    Original     		PDF H1-O03EE0-1004015ND transistor BU 102S fgt313 stp 10n40 SLA4052 BU 102S c4381 high voltage 3-phase motor driver ic RELAY sz - 2103 12V C5100 MOSFET SLA5096

    JIS B 0405 tolerance

    Abstract: JIS B 0405 general JIS B 0405 class c
    Text: DOCUMENT NUMBER ACS-1DC2-01 SMU-F2A Series MU HORIZONTAL DUPLEX ADAPTOR TECHNICAL SPECIFICATIONS Seiko Instruments Inc. Network Components Business 8, Nakase 1-Chome Mihama-ku, Chiba-shi, Chiba-ken 261-8507 JAPAN Telephone: +81-43-211-1211 Facsimile: +81-43-211-8039


    Original     		PDF ACS-1DC2-01 ACS-1DC2-01 JIS B 0405 tolerance JIS B 0405 general JIS B 0405 class c

    SEIKO INSTRUMENTS

    Abstract: No abstract text available
    Text: DOCUMENT NUMBER ACS-1DC3-01 SMU-8A Series MU VERTICAL 8-PORTS ADAPTOR TECHNICAL SPECIFICATIONS Seiko Instruments Inc. Network Components Business 8, Nakase 1-Chome Mihama-ku, Chiba-shi, Chiba-ken 261-8507 JAPAN Telephone: +81-43-211-1211 Facsimile: +81-43-211-8039


    Original     		PDF ACS-1DC3-01 ACS-1DC3-01 SEIKO INSTRUMENTS

    Untitled

    Abstract: No abstract text available
    Text: FLM1213-4F X, Ku-Band Internally Matched FET FEATURES • • • • • • • High Output Power: P1dB = 36.0dBm Typ. High Gain: G1dB = 6.5dB (Typ.) High PAE: hadd = 28% (Typ.) Low IM3 = -46dBc@Po = 25.5dBm Broad Band: 12.7 ~ 13.2GHz Impedance Matched Zin/Zout = 50W


    Original     		PDF FLM1213-4F -46dBc FLM1213-4F FCSI0598M200

    FLM1213-4F

    Abstract: No abstract text available
    Text: FLM1213-4F X, Ku-Band Internally Matched FET FEATURES • • • • • • • High Output Power: P1dB = 36.0dBm Typ. High Gain: G1dB = 6.5dB (Typ.) High PAE: ηadd = 28% (Typ.) Low IM3 = -46dBc@Po = 25.5dBm Broad Band: 12.7 ~ 13.2GHz Impedance Matched Zin/Zout = 50Ω


    Original     		PDF FLM1213-4F -46dBc FLM1213-4F

    FLM1213-4F

    Abstract: No abstract text available
    Text: FLM1213-4F X, Ku-Band Internally Matched FET FEATURES • • • • • • • High Output Power: P1dB = 36.0dBm Typ. High Gain: G1dB = 6.5dB (Typ.) High PAE: ηadd = 28% (Typ.) Low IM3 = -46dBc@Po = 25.5dBm Broad Band: 12.7 ~ 13.2GHz Impedance Matched Zin/Zout = 50Ω


    Original     		PDF FLM1213-4F -46dBc FLM1213-4F FCSI0598M200

    fujitsu gaas fet

    Abstract: 0.1 j100 513 s12 datasheet FLM1213-4F 130015
    Text: FLM1213-4F X, Ku-Band Internally Matched FET FEATURES • • • • • • • High Output Power: P1dB = 36.0dBm Typ. High Gain: G1dB = 6.5dB (Typ.) High PAE: ηadd = 28% (Typ.) Low IM3 = -46dBc@Po = 25.5dBm Broad Band: 12.7 ~ 13.2GHz Impedance Matched Zin/Zout = 50Ω


    Original     		PDF FLM1213-4F -46dBc FLM1213-4F fujitsu gaas fet 0.1 j100 513 s12 datasheet 130015

    dh718

    Abstract: M208 F27D BH157
    Text: TUNING VARACTOR High Q silicon abrupt junction tuning varactor HIGH Q SILICON ABRUPT JUNCTION TUNING VARACTOR VBR 30 V Description This series of high Q epi-junction microwave tuning varactors 30 V incorporates a passivated mesa technology. It is well suited for frequency tuning applications up to Ku band.


    Original     		PDF EH71004 EH71006 EH71008 EH71010 EH71012 EH71016 EH71020 EH71025 EH71030 EH71037 dh718 M208 F27D BH157

    Untitled

    Abstract: No abstract text available
    Text: EMM5079ZB X / Ku-Band Power Amplifier MMIC FEATURES •Output Power; P1dB = 24.0 dBm Typ. •High Gain; GL = 23 dB(Typ.) •Wide Frequency Band ; 10.0 – 15.4 GHz •Impedance Matched Zin/Zout = 50Ω •QFN 20pin Plastic Mold Package(ZB) DESCRIPTION The EMM5079ZB is a wide band power amplifier MMIC that


    Original     		PDF EMM5079ZB 20pin EMM5079ZB

    EMM5079

    Abstract: EMM5079ZB SPO-2114 RO4003 emm5079zbt MA2830
    Text: EMM5079ZB X / Ku-Band Power Amplifier MMIC FEATURES •Output Power; P1dB = 24.0 dBm Typ. •High Gain; GL = 23 dB(Typ.) •Wide Frequency Band ; 10.0 – 15.4 GHz •Impedance Matched Zin/Zout = 50Ω •QFN 20pin Plastic Mold Package(ZB) DESCRIPTION The EMM5079ZB is a wide band power amplifier MMIC that


    Original     		PDF EMM5079ZB 20pin EMM5079ZB EMM5079 SPO-2114 RO4003 emm5079zbt MA2830

    3316D

    Abstract: No abstract text available
    Text: TOKEN SMT POWER WIRE-WOUND INDUCTORS Shielded / Unshielded SMT Power Inductors Token Electronics Industry Co., Ltd. Taiwan: No. 137, Sec. 1, Chung Shin Rd., Wu Ku Hsiang, Taipei Hsien, Taiwan, R.O.C TEL: 886-2-2981 0109; FAX: 886-2-2988 7487 China: 12F, Zhongxing Industry Bld., Chuangye Rd., Nanshan District, Shenzhen, Guangdong


    Original     		PDF TPS1608DC 3316D

    C10535E

    Abstract: NE4210M01 NE4210M01-T1 NEC Ga FET marking A 119 069
    Text: PRELIMINARY DATA SHEET HETERO JUNCTION FIELD EFFECT TRANSISTOR NE4210M01 C to Ku BAND SUPER LOW NOISE AMPLIFIER N-CHANNEL HJ-FET DESCRIPTION The NE4210M01 is a Hetero Junction FET that utilizes the hetero junction to create high mobility electrons. Its excellent low noise and high associated gain make it suitable for DBS, TVRO and another commercial systems.


    Original     		PDF NE4210M01 NE4210M01 NE4210M01-T1 C10535E NE4210M01-T1 NEC Ga FET marking A 119 069

    Untitled

    Abstract: No abstract text available
    Text: ROHM Group Rohm Korea Corporation 371-11, Kasan-Dong, Kum chon-ku, Seoul, Korea Tel: 2 8182-600 Fax: (2) 864-9343 Rohm Co., Ltd. Head office 21, Saiin Mizosaki-cho, Ukyo-ku, Kyoto 615, Japan Tel: (075) 311-2121 Fax: (075) 315-0712 Rohm-Wako (Malaysia) SDN. BHD.


    OCR Scan     		PDF CA95131,

    2604A

    Abstract: No abstract text available
    Text: ROHM Group Rohm Co., Ltd. Head office Rohm Korea Corp. 371-11, Kasan-Dong, Kum chon-ku, Seoul, Korea Tel: 2 8182-600 Fax: (2) 864-9343 21, Saiin Mizosaki-cho, Ukyo-ku, Kyoto 615, Japan Tel: (075) 311-2121 Fax: (075) 315-0712 Rohm-Wako (Malaysia) SDN. BHD.


    OCR Scan     		PDF

    rohm rohm rohm rohm rohm rohm rohm rohm rohm rohm rohm rohm

    Abstract: No abstract text available
    Text: ROHM Group Rohm Co., Ltd. Rohm Korea Corp. 371-11, Kasan-Dong, Kum chon-ku, Seoul, Korea Tel: 2 8182-600 Fax: (2) 864-9343 Head office 21, Saiin Mizosaki-cho, Ukyo-ku, Kyoto 615, Japan Tel: (075) 311-2121 Fax: (075) 315-0712 Rohm-Wako (Malaysia) SDN. BHD.


    OCR Scan     		PDF

    circuit diagram of pulse width modulation 89c51

    Abstract: 89c51 hex code 40 pin 89C51 89c51 isp intel 89c51 pin diagram 89c51 PHILIPS 89C51 interfacing 89C51RC 89C51 EXTERNAL RAM programming 89C51
    Text: Philips Sem iconductors Prelim inary specification 80C51 8-bit Flash microcontroller family 32K/64K ISP FLASH with 512 -1 K RAM fto rc u p r / r n KU+/KU+ DESCRIPTION FEATURES The 89C51RX+ devices contain a non-volatile FLASH program m em ory up to 64K bytes in the 89C51RD+ that is both parallel


    OCR Scan     		PDF 80C51 32K/64K 512-1K 89C51RX+ 89C51RD+ a307-2 SQT307-2 circuit diagram of pulse width modulation 89c51 89c51 hex code 40 pin 89C51 89c51 isp intel 89c51 pin diagram 89c51 PHILIPS 89C51 interfacing 89C51RC 89C51 EXTERNAL RAM programming 89C51

    Untitled

    Abstract: No abstract text available
    Text: FLM1213-4F X, Ku-Band Internally Matched FET FEATURES • High Output Power: P ^ b = 36.0dBm Typ. • High Gain: G ^ b = 6.5dB (Typ.) • High PAE: riadd = 28% (Typ.) • Low IM 3 = -46dBc@Po = 25.5dBm • Broad Band: 12.7 ~ 13.2GHz • Impedance Matched Zin/Zout = 50Q


    OCR Scan     		PDF FLM1213-4F -46dBc FLM1213-4F FCSI0598M200

    MGF1323

    Abstract: No abstract text available
    Text: MITSUBISHI SEMICONDUCTOR <GaAs FET> ! MGF1323 I SMALL SIGNAL GaAs FET DESCRIPTION OUTLINE DRAWING The MGF1323, low-noise GaAs F E T with an N-channel Schottky gate, is designed for use in S to Ku band ampli­ Umt millimeters inches 4 M IN . 1.85 ± 0.2 4 M l N.


    OCR Scan     		PDF MGF1323 MGF1323, 13dBm 30rnA