KTC9014
Abstract: KTC9015
Text: SEMICONDUCTOR KTC9014 TECHNICAL DATA EPITAXIAL PLANAR NPN TRANSISTOR GENERAL PURPOSE APPLICATION. SWITCHING APPLICATION. B C FEATURES A ᴌExcellent hFE Linearity : hFE IC=0.1mA /hFE(IC=2mA)=0.95(Typ.). ᴌLow Noise :NF=1dB(Typ.) at f=1kHz. N E K ᴌComplementary to KTC9015.
|
Original
|
PDF
|
KTC9014
KTC9015.
100mA,
100MHz
KTC9014
KTC9015
|
KTC9014
Abstract: No abstract text available
Text: SEMICONDUCTOR KTC9015 TECHNICAL DATA EPITAXIAL PLANAR PNP TRANSISTOR GENERAL PURPOSE APPLICATION. SWITCHING APPLICATION. B C FEATURES A Excellent hFE Linearity : hFE IC=-0.1mA /hFE(IC=-2mA)=0.95(Typ.). Low Noise :NF=1dB(Typ.) at f=1kHz. N E K Complementary to KTC9014.
|
Original
|
PDF
|
KTC9015
KTC9014.
-100mA,
-10mA
100MHz
KTC9014
|
KTC9015A
Abstract: KTC9014A C200-600
Text: SEMICONDUCTOR KTC9015A TECHNICAL DATA EPITAXIAL PLANAR PNP TRANSISTOR GENERAL PURPOSE APPLICATION. SWITCHING APPLICATION. B C FEATURES A ・Excellent hFE Linearity : hFE IC=-0.1mA /hFE(IC=-2mA)=0.95(Typ.). ・Low Noise :NF=1dB(Typ.) at f=1kHz. N K ・Complementary to KTC9014A.
|
Original
|
PDF
|
KTC9015A
KTC9014A.
-100mA,
-10mA
100MHz
KTC9015A
KTC9014A
C200-600
|
KTC9014S
Abstract: KTC*S KTC9014
Text: SEMICONDUCTOR KTC9014S MARKING SPECIFICATION SOT-23 PACKAGE 1. Marking method Laser Marking 2. Marking No. 1 BDB 2 1 Item Marking Description Device Mark BD KTC9014S hFE Grade B B, C, K, D * Lot No. 01 2002. 1st Week [0:1st Character, 1:2nd Character] Note * Lot No. marking method
|
Original
|
PDF
|
KTC9014S
OT-23
KTC9014S
KTC*S
KTC9014
|
Untitled
Abstract: No abstract text available
Text: SEMICONDUCTOR KTC9014 TECHNICAL DATA EPITAXIAL PLANAR NPN TRANSISTOR GENERAL PURPOSE APPLICATION. SWITCHING APPLICATION. B C FEATURES A ・Excellent hFE Linearity : hFE IC=0.1mA /hFE(IC=2mA)=0.95(Typ.). ・Low Noise :NF=1dB(Typ.) at f=1kHz. N E K ・Complementary to KTC9015.
|
Original
|
PDF
|
KTC9014
KTC9015.
100mA,
100MHz
|
KTC9014S
Abstract: KTC9015S
Text: SEMICONDUCTOR KTC9014S TECHNICAL DATA EPITAXIAL PLANAR NPN TRANSISTOR GENERAL PURPOSE APPLICATION. SWITCHING APPLICATION. FEATURES E B L L Excellent hFE Linearity 2 H Complementary to KTC9015S. 3 G A Low Noise :NF=1dB Typ. at f=1kHz. 1 J SYMBOL RATING UNIT
|
Original
|
PDF
|
KTC9014S
KTC9015S.
10x8x0
KTC9014S
KTC9015S
|
KTC9014S
Abstract: KTC9015S
Text: SEMICONDUCTOR KTC9015S TECHNICAL DATA EPITAXIAL PLANAR PNP TRANSISTOR GENERAL PURPOSE APPLICATION. SWITCHING APPLICATION. FEATURES E B L L Excellent hFE Linearity 2 H Complementary to KTC9014S. 3 G A Low Noise :NF=1dB Typ. at f=1kHz. 1 SYMBOL RATING UNIT
|
Original
|
PDF
|
KTC9015S
KTC9014S.
-100mA,
-10mA
100MHz
KTC9014S
KTC9015S
|
KTC9014A
Abstract: KTC9015A C200-600 *c9014* transistor
Text: SEMICONDUCTOR KTC9014A TECHNICAL DATA EPITAXIAL PLANAR NPN TRANSISTOR GENERAL PURPOSE APPLICATION. SWITCHING APPLICATION. B C FEATURES A ・Excellent hFE Linearity : hFE IC=0.1mA /hFE(IC=2mA)=0.95(Typ.). ・Low Noise :NF=1dB(Typ.) at f=1kHz. N K ・Complementary to KTC9015A.
|
Original
|
PDF
|
KTC9014A
KTC9015A.
100mA,
100MHz
KTC9014A
KTC9015A
C200-600
*c9014* transistor
|
KTC9015 transistor
Abstract: KTC9014 KTC9015 TO 92 leadframe
Text: SEMICONDUCTOR KTC9014 TECHNICAL DATA EPITAXIAL PLANAR NPN TRANSISTOR GENERAL PURPOSE APPLICATION. SWITCHING APPLICATION. B FEATURES C A ・Excellent hFE Linearity : hFE IC=0.1mA /hFE(IC=2mA)=0.95(Typ.). ・Low Noise :NF=1dB(Typ.) at f=1kHz. N ・Complementary to KTC9015.
|
Original
|
PDF
|
KTC9014
KTC9015.
100mA,
100MHz
KTC9015 transistor
KTC9014
KTC9015
TO 92 leadframe
|
Untitled
Abstract: No abstract text available
Text: SEMICONDUCTOR KTC9014 TECHNICAL DATA EPITAXIAL PLANAR NPN TRANSISTOR GENERAL PURPOSE APPLICATION. SWITCHING APPLICATION. FEATURES 2011. 4. 4 Revision No : 3 1/1
|
Original
|
PDF
|
KTC9014
|
Untitled
Abstract: No abstract text available
Text: SEMICONDUCTOR KTC9015 TECHNICAL DATA EPITAXIAL PLANAR PNP TRANSISTOR GENERAL PURPOSE APPLICATION. SWITCHING APPLICATION. B C FEATURES A ・Excellent hFE Linearity : hFE IC=-0.1mA /hFE(IC=-2mA)=0.95(Typ.). ・Low Noise :NF=1dB(Typ.) at f=1kHz. N ・Complementary to KTC9014.
|
Original
|
PDF
|
KTC9015
KTC9014.
-100mA,
-10mA
100MHz
|
ktc9014
Abstract: No abstract text available
Text: SEMICONDUCTOR KTC9014 TECHNICAL DATA EPITAXIAL PLANAR NPN TRANSISTOR GENERAL PURPOSE APPLICATION. SWITCHING APPLICATION. B C FEATURES A ・Excellent hFE Linearity : hFE IC=0.1mA /hFE(IC=2mA)=0.95(Typ.). ・Low Noise :NF=1dB(Typ.) at f=1kHz. N E K ・Complementary to KTC9015.
|
Original
|
PDF
|
KTC9014
KTC9015.
100mA,
100MHz
ktc9014
|
KTC9014S
Abstract: KTC9015S
Text: SEMICONDUCTOR KTC9015S TECHNICAL DATA EPITAXIAL PLANAR PNP TRANSISTOR GENERAL PURPOSE APPLICATION. SWITCHING APPLICATION. FEATURES E B L L Excellent hFE Linearity 2 H Complementary to KTC9014S. 3 G A Low Noise :NF=1dB Typ. at f=1kHz. 1 J SYMBOL RATING UNIT
|
Original
|
PDF
|
KTC9015S
KTC9014S.
10x8x0
KTC9014S
KTC9015S
|
KTC9015 transistor
Abstract: KTC9014 KTC9015
Text: SEMICONDUCTOR KTC9015 TECHNICAL DATA EPITAXIAL PLANAR PNP TRANSISTOR GENERAL PURPOSE APPLICATION. SWITCHING APPLICATION. B C FEATURES A ᴌExcellent hFE Linearity : hFE IC=-0.1mA /hFE(IC=-2mA)=0.95(Typ.). ᴌLow Noise :NF=1dB(Typ.) at f=1kHz. N E K ᴌComplementary to KTC9014.
|
Original
|
PDF
|
KTC9015
KTC9014.
-100mA,
-10mA
100MHz
KTC9015 transistor
KTC9014
KTC9015
|
|
|
Untitled
Abstract: No abstract text available
Text: SEMICONDUCTOR KTC9014A TECHNICAL DATA EPITAXIAL PLANAR NPN TRANSISTOR GENERAL PURPOSE APPLICATION. SWITCHING APPLICATION. FEATURES 2010. 1. 28 Revision No : 2 1/1
|
Original
|
PDF
|
KTC9014A
|
KTC9014S
Abstract: KTC9015S
Text: SEMICONDUCTOR KTC9014S TECHNICAL DATA EPITAXIAL PLANAR NPN TRANSISTOR GENERAL PURPOSE APPLICATION. SWITCHING APPLICATION. FEATURES E B L L Excellent hFE Linearity 2 H Complementary to KTC9015S. 3 G A Low Noise :NF=1dB Typ. at f=1kHz. 1 SYMBOL RATING UNIT
|
Original
|
PDF
|
KTC9014S
KTC9015S.
100mA,
100MHz
KTC9014S
KTC9015S
|
alternator diode 1776 B
Abstract: 2az marking transistor sot-23 SMD SOT23 transistor MARK Y2 ic mb4213 NEC 12F triac F10P048 ktc3114 equivalent SMD TRANSISTOR MARKING 02N DIODE PJ 57 ss14 BC517 equivalent
Text: Transistors Transistors Diodes Diodes Thyristors Thyristors SAW SAW Device Device Dielectric Dielectric Device Device Integrated Integrated Circuit Circuit Table of Contents Index 5 SMD Transistors Line-up PNP Transistors Transistors Line-up (NPN Transistors)
|
Original
|
PDF
|
Hig86-755-3679515
alternator diode 1776 B
2az marking transistor sot-23
SMD SOT23 transistor MARK Y2
ic mb4213
NEC 12F triac
F10P048
ktc3114 equivalent
SMD TRANSISTOR MARKING 02N
DIODE PJ 57 ss14
BC517 equivalent
|
Untitled
Abstract: No abstract text available
Text: SEMICONDUCTOR KTC9015S TECHNICAL DATA EPITAXIAL PLANAR PNP TRANSISTOR GENERAL PURPOSE APPLICATION. SWITCHING APPLICATION. FEATURES E B L L ・Excellent hFE Linearity D : hFE IC=-0.1mA /hFE(IC=-2mA)=0.95(Typ.). 2 A 3 G ・Low Noise :NF=1dB(Typ.) at f=1kHz.
|
Original
|
PDF
|
KTC9015S
KTC9014S.
10x8x0
|
khb*9D5N20P
Abstract: khb9d0n90n 6v Zener diode khb*2D0N60P transistor KHB7D0N65F BC557 transistor kia*278R33PI KHB9D0N90N circuit ktd998 transistor
Text: KEC 2N2904E Transistor KEC BC859 Transistor KEC F1B2CCI FRD KEC KDS135S Diode 2N2906E Transistor KEC BC860 Transistor KEC KAC3301QN Intergrated Circuit KEC KDS160 Diode KEC KEC 2N3904 Transistor KEC BCV71 Transistor KEC KDB2151E Diode KEC KDS160E Diode KEC
|
Original
|
PDF
|
2N2904E
BC859
KDS135S
2N2906E
BC860
KAC3301QN
KDS160
2N3904
BCV71
KDB2151E
khb*9D5N20P
khb9d0n90n
6v Zener diode
khb*2D0N60P
transistor
KHB7D0N65F
BC557 transistor
kia*278R33PI
KHB9D0N90N circuit
ktd998 transistor
|
LM 9015
Abstract: No abstract text available
Text: S EM IC O N D U C T O R KTC9014 TECHNI CAL DATA EPI TAXI AL PLANAR NPN TRA NS IST OR G E N E R A L PUR PO SE A PPLICATION. SW ITC H IN G APPLICATIO N. FEA T U RE S • Excellent h FE Linearity : hFE Ic= 0 .1m A /hFE(Ic=2mA)=0.95(Typ.). y- • Low Noise :N F=ldB(Typ.) at f=lkH z.
|
OCR Scan
|
PDF
|
KTC9014
100mA,
100MHz
LM 9015
|
Untitled
Abstract: No abstract text available
Text: SEMICONDUCTOR TECHNICAL DATA KTC9014 EPITAXIAL PLANAR NPN TRANSISTOR GENERAL PURPOSE APPLICATION. SWITCHING APPLICATION. FEATURES • Excellent I if e Linearity • hFE Ic=0.1m A /hFE(Ic=2m A )=0.95(T yp.). • Low Noise :NF=ldB(Typ.) at f=lkHz. • Complementary to KTC9015.
|
OCR Scan
|
PDF
|
KTC9014
KTC9015.
100mA,
100MHz
|
C200-600
Abstract: KTC9015 KTC9015 transistor KTC9014
Text: K EC KOREA ELECTRONICS CO.,LTD. SEMICONDUCTOR TECHNICAL DATA KTC9014 EPITAXIAL PLANAR NPN TRANSISTOR GENERAL PURPOSE APPLICATION. SWITCHING APPLICATION. FEATURES • Excellent Ii f e Linearity : hFE Ic=0.1mA /hFE(Ic=2mA)=0.95(Typ.). • Low Noise :NF=ldB(Typ.) at f=lkHz.
|
OCR Scan
|
PDF
|
KTC9014
KTC9015.
100mA,
100MHz
C200-600
KTC9015
KTC9015 transistor
KTC9014
|
Untitled
Abstract: No abstract text available
Text: S EM IC O N D U C T O R KTC9014A TECHNI CAL DATA EPI TAXI AL PLANAR NPN TRA NS IST OR G E N E R A L PUR PO SE A PPLICATION. SW ITC H IN G APPLICATIO N. FEA T U RE S • E xcellent h FE L inearity : h FE Ic = 0 .1m A /h FE(Ic = 2m A )= 0.95(T yp.). y- • L ow N oise :N F = ld B (T y p .) at f= lk H z .
|
OCR Scan
|
PDF
|
KTC9014A
|
2SC3875S
Abstract: BC547 BC546 2Sc4370a 2SC3227 2sa1274 2SA1267 2SC3201 BC557 bc556 2sa1659a bc557
Text: This Transistors Electrical Characteristics T a=25°C Applications VCEO fT (TYP) MIN (TYP) MAX VCE f ratnage Its Respective (mA) (mW) (V) (mA) (MHz) (V) (dB) (V) (KHz) 50 150 150 70^700 6 2 0.25 100 10 80 10 1 10 6 0.1 1 10 SOT-23 H 2SA1269 120 100 200
|
OCR Scan
|
PDF
|
Ta-25
2SC3875S
2SA1S04S
OT-23
2SC3201
2SA1269
O-92M
2SC3199
2SA1267
BC547 BC546
2Sc4370a
2SC3227
2sa1274
BC557 bc556
2sa1659a
bc557
|