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onsemi KSD985OSTU TRANS NPN DARL 60V 1.5A TO-126-3
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KSD985 Datasheets (11)

Part	Manufacturer	Description	Datasheet Type	PDF
KSD985	Fairchild Semiconductor	NPN Epitaxial Silicon Darlington Transistor	Original	PDF
KSD985	Fairchild Semiconductor	NPN EPITAXIAL SILICON DARLINGTON TRANSISTOR	Scan	PDF
KSD985	Motorola	Motorola Semiconductor Data & Cross Reference Book	Scan	PDF
KSD985	Unknown	Shortform IC and Component Datasheets (Plus Cross Reference Data)	Short Form	PDF
KSD985	Unknown	Shortform Data and Cross References (Misc Datasheets)	Short Form	PDF
KSD985	Samsung Electronics	Transistor Function Guide	Scan	PDF
KSD985	Samsung Electronics	NPN Epitaxial Silicon Darlington Transistor	Scan	PDF
KSD985O	Fairchild Semiconductor	NPN Epitaxial Silicon Darlington Transistor	Original	PDF
KSD985OSTU	Fairchild Semiconductor	NPN Epitaxial Silicon Darlington Transistor	Original	PDF
KSD985R	Fairchild Semiconductor	NPN Epitaxial Silicon Darlington Transistor	Original	PDF
KSD985Y	Fairchild Semiconductor	NPN Epitaxial Silicon Darlington Transistor	Original	PDF

KSD985 Datasheets Context Search

Catalog Datasheet	MFG & Type	Document Tags	PDF
Untitled Abstract: No abstract text available Text: KSD985/986 KSD985/986 Low Frequency Power Amplifier • Low Speed Switching Industrial Use TO-126 1 1. Emitter 2.Collector 3.Base NPN Epitaxial Silicon Darlington Transistor Absolute Maximum Ratings TC=25°C unless otherwise noted Symbol VCBO Parameter Collector-Base Voltage	Original	KSD985/986 O-126 KSD985 KSD986	PDF
Untitled Abstract: No abstract text available Text: KSD985/986 KSD985/986 Low Frequency Power Amplifier • Low Speed Switching Industrial Use TO-126 1 1. Emitter 2. Collector 3. Base NPN Epitaxial Silicon Darlington Transistor Absolute Maximum Ratings TC=25°C unless otherwise noted Symbol Parameter VCBO Collector-Base Voltage	Original	KSD985/986 O-126 KSD985 KSD986 PW300 Cycle10%	PDF
BDX548 Abstract: KSB1023 power BJT MJD117 Darlington bdx33c KSD5018 PNP dpak npn BD675A BD677A KSD1692 Text: Discrete Power BJT darlington Products IC A VCEO (V) VCBO (V) VEBO (V) hFE PC (W) VCE (sat) Min Max @ IC (A) Typ (V) Max (V) TO-126 NPN Configuration KSD985 1.5 60 150 8 10 2000 30000 1 - 1.5 KSD986 1.5 80 150 8 10 2000 30000 1 - 1.5 KSD1692 3 100 150 8	Original	O-126 KSD985 KSD986 KSD1692 BD675A BD677A KSE800 KSE801 MJE800 TIP146 BDX548 KSB1023 power BJT MJD117 Darlington bdx33c KSD5018 PNP dpak npn BD675A BD677A KSD1692	PDF
D986-Y Abstract: KSD986OS Text: KSD985/986 KSD985/986 Low Frequency Power Amplifier • Low Speed Switching Industrial Use TO-126 1 1. Emitter 2.Collector 3.Base NPN Epitaxial Silicon Darlington Transistor Absolute Maximum Ratings TC=25°C unless otherwise noted Symbol VCBO Parameter Collector-Base Voltage	Original	KSD985/986 O-126 KSD985 KSD986 PW300 Cycle10% O-126-3 KSD986OS D986-Y	PDF
KSD985 Abstract: KSD986 Text: KSD985/986 KSD985/986 Low Frequency Power Amplifier • Low Speed Switching Industrial Use TO-126 1 1. Emitter 2.Collector 3.Base NPN Epitaxial Silicon Darlington Transistor Absolute Maximum Ratings TC=25°C unless otherwise noted Symbol VCBO Parameter Collector-Base Voltage	Original	KSD985/986 O-126 KSD985 KSD986 KSD985 KSD986	PDF
Untitled Abstract: No abstract text available Text: KSD985/986 KSD985/986 Low Frequency Power Amplifier • Low Speed Switching Industrial Use TO-126 1 1. Emitter 2.Collector 3.Base NPN Epitaxial Silicon Darlington Transistor Absolute Maximum Ratings TC=25°C unless otherwise noted Symbol VCBO Parameter Collector-Base Voltage	Original	KSD985/986 O-126 KSD985 KSD986 PW300 Cycle10% KSD986YS O-126 O-126-3	PDF
fjaf6812 Abstract: tip41 darlington fjaf6920 BUT12(A)F KSA1010 transistor bd140-15 bu408 equivalent FJL6920 equivalent fjl6820 FJL6920 Text: Discrete Bipolar Power Transistor – General Purpose Part Number IC A VCEO (V) VCBO (V) VEBO (V) PC (W) hFE VCE (sat) Min Max @ IC (A) Typ (V) Max (V) TO-126 NPN Configuration KSC2682 0.1 180 180 5 8 100 320 0.01 0.12 0.5 KSC3502 0.1 200 200 5 5 40 320	Original	O-126 KSC2682 KSC3502 KSC2258 KSC2258A KSC3503 KSC3953 KSC2688 BD150 KSC5305D fjaf6812 tip41 darlington fjaf6920 BUT12(A)F KSA1010 transistor bd140-15 bu408 equivalent FJL6920 equivalent fjl6820 FJL6920	PDF
BUV48I Abstract: BU808DXI BD699 buv18a BD241CFI transistor 2SA1046 BUW52I BU808DFI equivalent BU724AS 2SA1046 Text: BIPOLAR TRANSISTOR INTRODUCTION TO BIPOLAR CROSS REFERENCE In order to improve our overall service, SGS-THOMSON has introduced a system of preferred transistor sales types. The following cross-reference is intended as a guide to identify sales types that may be suitable	Original	2N3016 2N3021 2N3022 2N3023 2N3024 2N3025 2N3026 2N3055 2N3076 2N3171 BUV48I BU808DXI BD699 buv18a BD241CFI transistor 2SA1046 BUW52I BU808DFI equivalent BU724AS 2SA1046	PDF
2N5657 equivalent Abstract: 2SA1046 BU326 BU108 BU100 2SC2331 Y tip47 419 2N3792 application notes Text: MOTOROLA SEMICONDUCTOR TECHNICAL DATA 2N5655 2N5656 2N5657 Plastic NPN Silicon High-Voltage Power Transistor . . . designed for use in line–operated equipment such as audio output amplifiers; low–current, high–voltage converters; and AC line relays.	Original	2N5655 2N5656 2N5657 TIP73B TIP74 TIP74A TIP74B TIP75 TIP75A TIP75B 2N5657 equivalent 2SA1046 BU326 BU108 BU100 2SC2331 Y tip47 419 2N3792 application notes	PDF
MJE494 Abstract: 2SC1419 BD 804 2SD675 MJE104 BD581 BD135 CURVES MJ1000 DTS-4041 2N5037 Text: MOTOROLA SEMICONDUCTOR TECHNICAL DATA BD157 BD158 BD159 Plastic Medium Power NPN Silicon Transistor . . . designed for power output stages for television, radio, phonograph and other consumer product applications. 0.5 AMPERE POWER TRANSISTORS NPN SILICON 250 – 300 – 350 VOLTS	Original	BD157 BD158 BD159 TIP73B TIP74 TIP74A TIP74B TIP75 TIP75A TIP75B MJE494 2SC1419 BD 804 2SD675 MJE104 BD581 BD135 CURVES MJ1000 DTS-4041 2N5037	PDF
2SD669 equivalent Abstract: BD801 BDY29 equivalent BU108 2SC2080 2SD436 2N6021 BD345 tip122 D-PAK package 2SD544 Text: MOTOROLA SEMICONDUCTOR TECHNICAL DATA 2N6609 See 2N3773 Darlington Silicon Power Transistors 2N6667 2N6668 . . . designed for general–purpose amplifier and low speed switching applications. • High DC Current Gain — hFE = 3500 (Typ) @ IC = 4 Adc • Collector–Emitter Sustaining Voltage — @ 200 mAdc	Original	2N6609 2N3773) 2N6667 2N6668 220AB 2N6387, 2N6388 2SD669 equivalent BD801 BDY29 equivalent BU108 2SC2080 2SD436 2N6021 BD345 tip122 D-PAK package 2SD544	PDF
2SC495 Abstract: NSP41A BU108 transistor BD614 MOTOROLA 2SA663 BD4122 BD661 MJ1000 NSP2100 D45VH4 similar Text: MOTOROLA SEMICONDUCTOR TECHNICAL DATA MJF6107 Power Transistor For Isolated Package Applications PNP SILICON POWER TRANSISTOR 7 AMPERES 70 VOLTS 34 WATTS Designed for general–purpose amplifier and switching applications, where the mounting surface of the device is required to be electrically isolated from the heatsink	Original	MJF6107 2N6107 E69369, TIP73B TIP74 TIP74A TIP74B TIP75 TIP75A TIP75B 2SC495 NSP41A BU108 transistor BD614 MOTOROLA 2SA663 BD4122 BD661 MJ1000 NSP2100 D45VH4 similar	PDF
"Tektronix 475" Abstract: equivalent 2n6488 TIP42C EQUIVALENT BU108 motorola darlington power transistor motorola 266 TO-204AA transistor D45H11 equivalent replacement pnp bux TRANSISTOR REPLACEMENT table for transistor tip3055 equivalent Text: MOTOROLA SEMICONDUCTOR TECHNICAL DATA BUX48 BUX48A SWITCHMODE II Series NPN Silicon Power Transistors 15 AMPERES NPN SILICON POWER TRANSISTORS 400 AND 450 VOLTS V BR CEO 850 – 1000 VOLTS V(BR)CEX 175 WATTS The BUX 48/BUX 48A transistors are designed for high–voltage, high–speed,	Original	48/BUX BUX48 BUX48A AMPERE32 TIP73B TIP74 TIP74A TIP74B TIP75 TIP75A "Tektronix 475" equivalent 2n6488 TIP42C EQUIVALENT BU108 motorola darlington power transistor motorola 266 TO-204AA transistor D45H11 equivalent replacement pnp bux TRANSISTOR REPLACEMENT table for transistor tip3055 equivalent	PDF
D42C5 Abstract: transistor bc 647 2N5302 EB pin out TRANSISTOR tip2955 bs170 replacement 2sc141 BU108 bc 658 Motorola transistors MJE3055 TO 127 MC7812 TO-220 Text: MOTOROLA SEMICONDUCTOR TECHNICAL DATA  Data Sheet SCANSWITCH Designer's MJE16204 NPN Bipolar Power Deflection Transistor For High and Very High Resolution Monitors The MJE16204 is a state–of–the–art SWITCHMODE bipolar power transistor. It is	Original	MJE16204 MJE16204 TIP73B TIP74 TIP74A TIP74B TIP75 TIP75A TIP75B TIP75C D42C5 transistor bc 647 2N5302 EB pin out TRANSISTOR tip2955 bs170 replacement 2sc141 BU108 bc 658 Motorola transistors MJE3055 TO 127 MC7812 TO-220	PDF

2N3055 Abstract: BU108 AN415A MJE2955T ST BDX54 2n3055 audio amplifier application note BU326 BU100 mje13005 BDV64 Text: MOTOROLA SEMICONDUCTOR TECHNICAL DATA PNP MJE2955T * NPN MJE3055T * Complementary Silicon Plastic Power Transistors . . . designed for use in general–purpose amplifier and switching applications. *Motorola Preferred Device • DC Current Gain Specified to 10 Amperes	Original	MJE2955T MJE3055T TIP73B TIP74 TIP74A TIP74B TIP75 TIP75A TIP75B TIP75C 2N3055 BU108 AN415A MJE2955T ST BDX54 2n3055 audio amplifier application note BU326 BU100 mje13005 BDV64	PDF
2N5631 equivalent Abstract: 2N5630 "cross-reference" Chomerics BU108 2SA1046 tip122 tip127 audio amp BU326 BU100 2sd313 equivalent NPN/TIP42C as regulator Text: MOTOROLA SEMICONDUCTOR TECHNICAL DATA NPN 2N5630 High-Voltage Ċ High Power Transistors 2N5631 PNP 2N6030 . . . designed for use in high power audio amplifier applications and high voltage switching regulator circuits. • High Collector Emitter Sustaining Voltage —	Original	2N5630, 2N6030 2N5631, 2N6031 2N5630 2N5631 2N5631 equivalent 2N5630 "cross-reference" Chomerics BU108 2SA1046 tip122 tip127 audio amp BU326 BU100 2sd313 equivalent NPN/TIP42C as regulator	PDF
BD179-10 equivalent Abstract: BU108 2SA1046 2SC7 BDX54 BUX98A BU326 BU100 bul1 Text: MOTOROLA SEMICONDUCTOR TECHNICAL DATA BD179 BD179-10 Plastic Medium Power Silicon NPN Transistor 3.0 AMPERES POWER TRANSISTORS NPN SILICON 80 VOLTS 30 WATTS . . . designed for use in 5.0 to 10 Watt audio amplifiers and drivers utilizing complementary or quasi complementary circuits.	Original	BD179 BD180 BD179-10 TIP73B TIP74 TIP74A TIP74B TIP75 TIP75A BD179-10 equivalent BU108 2SA1046 2SC7 BDX54 BUX98A BU326 BU100 bul1	PDF
sec tip41c Abstract: MJE493 2SC1419 2sc3281 2n3055 audio output circuit BDW93 MJ1000 BDW83 buv98a cross reference 2SC1943 Text: MOTOROLA SEMICONDUCTOR TECHNICAL DATA NPN MJL3281A* PNP MJL1302A*  Data Sheet Designer's Complementary NPN-PNP Silicon Power Bipolar Transistor *Motorola Preferred Device 15 AMPERE COMPLEMENTARY SILICON POWER TRANSISTORS 200 VOLTS 200 WATTS • The MJL3281A and MJL1302A are PowerBase power transistors for high power	Original	MJL3281A MJL1302A MJL3281A* MJL1302A* TIP73B TIP74 TIP74A TIP74B TIP75 TIP75A sec tip41c MJE493 2SC1419 2sc3281 2n3055 audio output circuit BDW93 MJ1000 BDW83 buv98a cross reference 2SC1943	PDF
Untitled Abstract: No abstract text available Text: NPN EPITAXIAL SILICON DARLINGTON TRANSISTOR KSD985/986 LOW FREQUENCY POWER AMPLIFIER LOW SPEED SWITCHING INDUSTRIAL USE ABSOLUTE MAXIMUM RATINGS Characteristic Symbol Rating Unit C ollector-B ase Voltage V ceO 150 V C ollector-E m ltter Voltage : KSD985 V cE O	OCR Scan	KSD985/986 KSD985 KSD986 300ns	PDF
ksd 150 full safe Abstract: No abstract text available Text: NPN EPITAXIAL SILICON DARLINGTON TRANSISTOR KSD985/986 LOW FREQUENCY POWER AMPLIFIER LOW SPEED SW ITCHING INDUSTRIAL USE T O -126 ABSOLUTE MAXIMUM RATINGS Characteristic Symbol Rating Unit C ollector-Base Voltage VcEO 150 V C ollector-E m itter Voltage : KSD 985	OCR Scan	KSD985/986 KSD986 ksd 150 full safe	PDF
KSD985 Abstract: KSD986 Text: NPN EPITAXIAL SILICON DARLINGTON TRANSISTO R KSD985/986 LOW FREQUENCY POWER AMPLIFIER LOW SPEED SW ITCHING INDUSTRIAL USE A BSOLUTE M AXIMUM RATINGS C h a r a c te r is tic Sym bol R a tin g U n it C o l le c to r-B a s e V o lta g e VcEO 150 V C o lle c to r-E m itte r V o lta g e : K S D 9 8 5	OCR Scan	KSD985/986 KSD985 KSD986 300ns,	PDF
A 986 transistor Abstract: SL 100 NPN Transistor Text: NPN EPITAXIAL SILICON DARLINGTON TRANSISTOR KSD985/986 LOW FREQUENCY POWER AMPLIFIER LOW SPEED SWITCHING INDUSTRIAL USE ABSOLUTE MAXIMUM RATINGS Characteristic Symbol Rating Unit Collector-Base Voltage Collector-Emitter Voltage: KSD985 : KSD986 Emitter-Base Voltage	OCR Scan	KSD985/986 KSD985 KSD986 A 986 transistor SL 100 NPN Transistor	PDF
BC 251 transistor Abstract: 50V 1A power transistor Text: NPN EPITAXIAL SILICON DARLINGTON TRANSISTOR KSD985/986 LOW FREQUENCY POWER AMPLIFIER LOW SPEED SWITCHING INDUSTRIAL USE ABSOLUTE MAXIMUM RATINGS Characteristic Symbol Rating Unit Collector-Base Voltage VcEO 150 Collector-Emitter Voltage: KSD985 VcEO 60 V VcEO	OCR Scan	KSD985/986 KSD985 KSD986 Cycle10% BC 251 transistor 50V 1A power transistor	PDF
1E80 Abstract: KSB772 KSD882 KSD985 PVK350 60V transistor npn 2a Text: SAMSUNG SEMICONDUCTOR INC KSD882 IME D 00D?tl1.3 \| NPN EPITAXIAL SILICON TRANSISTOR AUDIO FREQUENCY POWER AMPLIFIER LOW SPEED SWITCHING TO -126 ' • Complement to KSB772 ABSOLUTE MAXIMUM RATINGS Ta= 25*C Characteristic Symbol ; Collector-Base Voltage Collector-Emitter Voltage	OCR Scan	KSD882 KSB772 O-126 T-33-29 0007b24 KSD985 1E80 KSB772 KSD985 PVK350 60V transistor npn 2a	PDF

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KSD985 Price and Stock

onsemi KSD985OSTU

KSD985 Datasheets (11)

KSD985 Datasheets Context Search

Untitled

Untitled

BDX548

D986-Y

KSD985

Untitled

fjaf6812

BUV48I

2N5657 equivalent

MJE494

2SD669 equivalent

2SC495

"Tektronix 475"

D42C5

2N3055

2N5631 equivalent

BD179-10 equivalent

sec tip41c

Untitled

ksd 150 full safe

KSD985

A 986 transistor

BC 251 transistor

1E80