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    Fairchild Semiconductor Corporation KSB811YTA

    KSB811 - Small Signal Bipolar Transistor, 1A, 25V, PNP '
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    Rochester Electronics KSB811YTA 2,978 1
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    KSB811 Datasheets (16)

    Part ECAD Model Manufacturer Description Curated Type PDF
    KSB811 Fairchild Semiconductor PNP Epitaxial Silicon Transistor Original PDF
    KSB811 Fairchild Semiconductor PNP Epitaxial Silicon Transistor Original PDF
    KSB811 Unknown Shortform IC and Component Datasheets (Plus Cross Reference Data) Short Form PDF
    KSB811 Unknown Shortform Data and Cross References (Misc Datasheets) Short Form PDF
    KSB811 Samsung Electronics PNP (AUDIO FREQUENCY POWER AMPLIFIER) Scan PDF
    KSB811G Fairchild Semiconductor PNP Epitaxial Silicon Transistor Original PDF
    KSB811G Samsung Electronics TRANS GP BJT PNP 25V 1A 3TO-92S Scan PDF
    KSB811GBU Fairchild Semiconductor PNP Epitaxial Silicon Transistor Original PDF
    KSB811GTA Fairchild Semiconductor PNP Epitaxial Silicon Transistor Original PDF
    KSB811O Fairchild Semiconductor PNP Epitaxial Silicon Transistor Original PDF
    KSB811O Samsung Electronics TRANS GP BJT PNP 25V 1A 3TO-92S Scan PDF
    KSB811OBU Fairchild Semiconductor PNP Epitaxial Silicon Transistor Original PDF
    KSB811OTA Fairchild Semiconductor PNP Epitaxial Silicon Transistor Original PDF
    KSB811Y Samsung Electronics TRANS GP BJT PNP 25V 1A 3TO-92S Scan PDF
    KSB811YBU Fairchild Semiconductor PNP Epitaxial Silicon Transistor Original PDF
    KSB811YTA Fairchild Semiconductor PNP Epitaxial Silicon Transistor Original PDF

    KSB811 Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    KSB811

    Abstract: KSD1021
    Text: KSB811 KSB811 Audio Frequency Power Amplifier • Complement to KSD1021 • Collector Current : IC= -1A • Collector Dissipation : PC=350mW TO-92S 1 1.Emitter 2. Collector 3. Base PNP Epitaxial Silicon Transistor Absolute Maximum Ratings Ta=25°C unless otherwise noted


    Original     		PDF KSB811 KSD1021 350mW O-92S KSB811 KSD1021

    transistor ic1A

    Abstract: KSD1021 KSB811
    Text: KSD1021 NPN EPITAXIAL SILICON TRANSISTOR AUDIO FREQUENCY POWER AMPLIFIER • Complement to KSB811 • Collector Current IC=1A • Collector Dissipation PC=350mW TO-92  ABSOLUTE MAXIMUM RATINGS TA=25 Characteristic Symbol VCBO VCEO VEBO IC PC TJ T STG Collector-Base Voltage


    Original     		PDF KSD1021 KSB811 350mW 100mA transistor ic1A KSD1021 KSB811

    KSB811

    Abstract: KSD1021
    Text: KSB811 KSB811 Audio Frequency Power Amplifier • Complement to KSD1021 • Collector Current : IC= -1A • Collector Power Dissipation : PC=350mW TO-92S 1 1.Emitter 2. Collector 3. Base PNP Epitaxial Silicon Transistor Absolute Maximum Ratings Ta=25°C unless otherwise noted


    Original     		PDF KSB811 KSD1021 350mW O-92S KSB811 KSD1021

    KSB811

    Abstract: KSD1021
    Text: KSD1021 KSD1021 Audio Frequency Power Amplifier • Complement to KSB811 • Collector Current : IC=1A • Collector Dissipation : PC=350mW TO-92S 1 1.Emitter 2. Collector 3. Base NPN Epitaxial Silicon Transistor Absolute Maximum Ratings Ta=25°C unless otherwise noted


    Original     		PDF KSD1021 KSB811 350mW O-92S KSB811 KSD1021

    KSB811

    Abstract: KSD1021
    Text: KSB811 PNP EPITAXIAL SILICON TRANSISTOR AUDIO FREQUENCY POWER AMPLIFIER TO-92S • Complement to KSD1021 • Collector Current IC= -1A • Collector Dissipation PC=350mW  ABSOLUTE MAXIMUM RATING TA=25 Characteristic Symbol VCBO VCEO VEBO IC PC TJ T STG Collector-Base Voltage


    Original     		PDF KSB811 O-92S KSD1021 350mW -10mA, -100mA -10mA KSB811 KSD1021

    KSB811

    Abstract: KSD1021
    Text: KSD1021 NPN EPITAXIAL SILICON TRANSISTOR AUDIO FREQUENCY POWER AMPLIFIER • Complement to KSB811 • Collector Current IC=1A • Collector Dissipation PC=350mW TO-92 ABSOLUTE MAXIMUM RATINGS TA=25°°C Characteristic Symbol Collector-Base Voltage Collector-Emitter Voltage


    Original     		PDF KSD1021 KSB811 350mW KSB811 KSD1021

    Untitled

    Abstract: No abstract text available
    Text: JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD TO-92S Plastic-Encapsulate Transistors TO – 92S KSD1020 TRANSISTOR NPN 1. EMITTER FEATURES z Complementary to KSB811 2. COLLECTOR 3. BASE MAXIMUM RATINGS (Ta=25℃ unless otherwise noted) Symbol Parameter


    Original     		PDF O-92S KSD1020 KSB811 100mA

    Untitled

    Abstract: No abstract text available
    Text: JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD TO-92S Plastic-Encapsulate Transistors TO – 92S KSB811 TRANSISTOR PNP 1. EMITTER FEATURES z Complement to KSD1021 2. COLLECTOR 3. BASE MAXIMUM RATINGS (Ta=25℃ unless otherwise noted) Symbol Parameter


    Original     		PDF O-92S KSB811 KSD1021 -10mA -10mA

    Untitled

    Abstract: No abstract text available
    Text: KSB811 KSB811 Audio Frequency Power Amplifier • Complement to KSD1021 • Collector Current : IC= -1A • Collector Power Dissipation : PC=350mW TO-92S 1 1.Emitter 2. Collector 3. Base PNP Epitaxial Silicon Transistor Absolute Maximum Ratings Ta=25°C unless otherwise noted


    Original     		PDF KSB811 KSD1021 350mW O-92S KSB811

    KSB811

    Abstract: No abstract text available
    Text: KSB811 PNP EPITAXIAL SILICON TRANSISTOR AUDIO FREQUENCY POWER AMPLIFIER TO-92S • Complement to KSD1021 • Collector Current: IC= -1A • Collector Dissipation: PC=350mW ABSOLUTE MAXIMUM RATING TA=25°°C Characteristic Symbol VCBO VCEO VEBO IC PC TJ T STG


    Original     		PDF KSB811 KSD1021 350mW O-92S KSB811

    KSB811

    Abstract: No abstract text available
    Text: KSD1021 KSD1021 Audio Frequency Power Amplifier • Complement to KSB811 • Collector Current : IC=1A • Collector Dissipation : PC=350mW TO-92S 1 1.Emitter 2. Collector 3. Base NPN Epitaxial Silicon Transistor Absolute Maximum Ratings Ta=25°C unless otherwise noted


    Original     		PDF KSD1021 KSB811 350mW O-92S KSD1021 KSB811

    KSB811

    Abstract: KSD1021
    Text: KSD1021 KSD1021 Audio Frequency Power Amplifier • Complement to KSB811 • Collector Current : IC=1A • Collector Dissipation : PC=350mW TO-92S 1 1.Emitter 2. Collector 3. Base NPN Epitaxial Silicon Transistor Absolute Maximum Ratings Ta=25°C unless otherwise noted


    Original     		PDF KSD1021 KSB811 350mW O-92S KSB811 KSD1021

    thermistor KSD201

    Abstract: IRF power mosfets catalog Complementary MOSFETs buz11 BZX85C6V8 SPICE MODEL Diode 1N4001 50V 1.0A DO-41 Rectifier Diode K*D1691 make SMPS inverter welding machine transistor KSP44 1N5402 spice model tip122 tip127 mosfet audio amp
    Text: Fairchild Semiconductor Product Catalog 2004 Microcontrollers Optoelectronics Across the board. Around the world. Analog Discrete Interface & Logic Interface & Logic Discrete Power Optoelectronics Analog & Mixed Signal Fairchild Semiconductor, The Power Franchise™


    Original     		PDF

    FQPF*7N65C APPLICATIONS

    Abstract: bc548 spice model bf494 spice model spice model bf199 LM3171 BC517 spice model bc547 spice model BF494 spice MOC3043-M spice model SPICE model BC237
    Text: Fairchild PSG.book Page i Wednesday, July 28, 2004 11:12 AM Fairchild Semiconductor Product Catalog Rev. 1 Analog & Mixed Signal Discrete Power Interface & Logic Microcontrollers Optoelectronics RF Power Front Matter.fm Page ii Monday, August 2, 2004 10:09 AM


    Original     		PDF UF4003. UF4004. UF4005. UF4006. UF4007. USB10H. USB1T1102 USB1T11A. vKA75420M W005G FQPF*7N65C APPLICATIONS bc548 spice model bf494 spice model spice model bf199 LM3171 BC517 spice model bc547 spice model BF494 spice MOC3043-M spice model SPICE model BC237

    Untitled

    Abstract: No abstract text available
    Text: KSD1021 NPN EPITAXIAL SILICON TRANSISTOR AUDIO FREQUENCY POWER AMPLIFIER • Complement to KSB811 • Collector Current tc*1A • Collector Dissipation Pc=350mW ABSOLUTE MAXIMUM RATINGS TA=25'C Sym bol C haracteristic Collector-Base Voltage Collector-Em itler Voltage


    OCR Scan     		PDF KSD1021 KSB811 350mW

    Untitled

    Abstract: No abstract text available
    Text: PNP EPITAXIAL SILICON TRANSISTOR KSB811 AUDIO FREQUENCY POWER AMPLIFIER T O -92S • C om plem ent to KSD 1021 • C ollector C urrent: lc= -1A • C ollector D issipation: Pc=350m W ABSOLUTE MAXIMUM RATING TA=25°C C haracteristic Sym bol Col lector-Base Voltage


    OCR Scan     		PDF KSB811

    B34 transistor

    Abstract: t25E S03 pnp KSB811 KSD1021
    Text: KSB811 PNP EPITAXIAL SILICON TRANSISTOR AUDIO FREQUENCY POWER AMPLIFIER TO-92S • Complement to KSD1021 • Collector Current lc= -1 A • Collector Dissipation Pc=350mW ABSOLUTE MAXIMUM RATINGS Ta=25°C Characteristic Symbol Collector-Base Voltage Collector-Emitter Voltage


    OCR Scan     		PDF KSB811 KSD1021 350inW O-92S -100JIA, -10mA, b4142 00247D4 B34 transistor t25E S03 pnp KSB811 KSD1021

    TRANSISTOR a43

    Abstract: KSB811 KSD1021
    Text: SAMSU NG SEM ICO NDUCTOR INC 14E D KSB811 | 7 ^ 4 1 4 2 00Gfc,fl42 1 | PNP EPITAXIAL SILICON TRANSISTOR AUDIO FREQUENCY POWER AMPLIFIER T O -9 2 S • Complement to KSD1021 • Collector Current lc =-1 A • Collector Dissipation Pc =350mW ABSOLUTE MAXIMUM RATINGS T«=25°C


    OCR Scan     		PDF 00Dfc KSB811 KSD1021 350mW O-92S -100/jA, TRANSISTOR a43 KSD1021

    KSB811

    Abstract: KSD1021
    Text: KSD1021 NPN EPITAXIAL SILICON TRANSISTOR AUDIO FREQUENCY POWER AMPLIFIER • Complement to KSB811 • Collector Current lc =1A • Collector Dissipation Pc = isomW ABSOLUTE MAXIMUM RATINGS Ta=25°C Characteristic Symbol Rating Unit VcBO VcEO V ebo lc Pc


    OCR Scan     		PDF KSD1021 KSB811 O-92S lc-10mA, 002404b KSB811 KSD1021

    Untitled

    Abstract: No abstract text available
    Text: KSB811 PNP EPITAXIAL SILICON TRANSISTOR AUDIO FREQUENCY POWER AMPLIFIER • Complement to KSD1021 • Collector Current lc= -1A • Collector Dissipation Pc=350mW ABSOLUTE MAXIMUM RATING Ta*25X: C h aracteristic Sym bol Collector-Base Voltage Collector-Emitter Voltage


    OCR Scan     		PDF KSB811 KSD1021 350mW

    Untitled

    Abstract: No abstract text available
    Text: SAMSUNG ELECTRONICS INC bOE » • 7^4142 TRANSISTORS 0Q11524 *i27 « S r i G K FUNCTION GUIDE SOT-23 Type Transistors Continued Condition D evio and Polarity (Marking) NPN VcEO (V) PNP KST1009F2(F2) KST1009F3(F3) KST1009F4(F4) KST1009F5(F5) KST4124(ZC)


    OCR Scan     		PDF 0Q11524 OT-23 KST1009F2 KST1009F3 KST1009F4 KST1009F5 KST4124 KST4126 BCW29 O-92S

    BD53A

    Abstract: KSA733 KSC1330 KSC945 BD139 BD433 TO92 KSE 13007 L ss8050 sot-23 KSE13009F KSP10
    Text: FUNCTION GUIDE TRANSISTORS 3. QUICK REFERENCE TABLE APPLICATION 3.1 Audio Equipment “i Package Application FM AM D iff. Amp RM AM P M ix Conv Local Ose IF SOT-23 KSC2223 KSC2223 KSC2223 KSC2715 RF KSC1623 Conv Ose KSC2715 IF KSC2715 10W 20W KSA812/KSC1623


    OCR Scan     		PDF OT-23 KSC2223 KSC2715 KSC1623 KSC2715 KSC1674 BD53A KSA733 KSC1330 KSC945 BD139 BD433 TO92 KSE 13007 L ss8050 sot-23 KSE13009F KSP10

    transistor 13003 AD

    Abstract: ksd-180 HF 13003 KSD180 13003 HF KSD168 KSD966 ksd-168 PNP NPN Transistor VCEO 120V 100V Ic 7A KSC 1.5k 250v
    Text: TRANSISTORS FUNCTION GUIDE 1. SMALL SIGNAL TRANSISTORS 1.1 General Purpose Transistors 1.1.1 SOT-23 Type Transistors Device and Polarity Marking Condition V ceo lc Vce h FE Condition (c le Vce(sat},VBE(sat)(v) Condition fiÌMHz) (V) (A) (V) !c (mA) (mA)


    OCR Scan     		PDF OT-23 KST06 KST05 KSC1623 BCW71 BCX70G BCX70H BCX70J BCX70K BCX71G transistor 13003 AD ksd-180 HF 13003 KSD180 13003 HF KSD168 KSD966 ksd-168 PNP NPN Transistor VCEO 120V 100V Ic 7A KSC 1.5k 250v

    ksd 250v 10a

    Abstract: ksd 202 ksd 180 13003 bd ksd 250v ksd 75 bow 94c bdx 44b ksd 250V 5A d5072
    Text: TRANSISTORS FUNCTION GUIDE 3. QUICK REFERENCE TABLE APPLICATION 3.1 Audio Equipment Package SOT-23 TO-92 TO-92L TO-126 TO-220 Application FM RM AMP KSC2223 Mix Conv KSC2223 Local Ose KSC2223 IF AM Diff. Amp KSC2715 RF KSC1623 Conv Ose KSC2715 IF KSC2715


    OCR Scan     		PDF OT-23 KSC2223 KSC2715 KSC1674 KSC1674/ KSC167Î KSC838/KSC167 ksd 250v 10a ksd 202 ksd 180 13003 bd ksd 250v ksd 75 bow 94c bdx 44b ksd 250V 5A d5072