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    KMM5362 Price and Stock

    Samsung Semiconductor KMM5362000BG-7

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    Bristol Electronics KMM5362000BG-7 4
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    Samsung Semiconductor KMM5362205AWG-6

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    Samsung Semiconductor KMM5362203AW-7

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    Samsung Semiconductor KMM536256BW-7

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    Quest Components KMM536256BW-7 300
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    Samsung Semiconductor KMM536256AG-8

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    KMM5362 Datasheets (7)

    Part ECAD Model Manufacturer Description Curated Type PDF
    KMM5362203C2W-6 Samsung Electronics 2M x 36 DRAM SIMM using 1Mx16 and 1Mx4 Quad CAS, 1K Refresh, 5V Original PDF
    KMM5362203C2WG Samsung Electronics 2m x 36 Dram Simm Using 1Mx16 and 1mx4 Quad Cas 1k Refresh 5V Original PDF
    KMM5362203C2WG-6 Samsung Electronics 2M x 36 DRAM SIMM using 1Mx16 and 1Mx4 Quad CAS, 1K Refresh, 5V Original PDF
    KMM5362205C2W-6 Samsung Electronics 2M x 36 DRAM SIMM using 1Mx16 and 4M Quad CAS EDO, 1K Refresh Original PDF
    KMM5362205C2WG Samsung Electronics 2M x 36 DRAM SIMM using 1Mx16 and 4M Quad CAS EDO 1K Refresh Original PDF
    KMM5362205C2WG-5 Samsung Electronics 2M x 36 DRAM SIMM using 1Mx16 and 4M Quad CAS EDO, 1K Refresh Original PDF
    KMM5362205C2WG-6 Samsung Electronics 2M x 36 DRAM SIMM using 1Mx16 and 4M Quad CAS EDO, 1K Refresh Original PDF

    KMM5362 Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    tb41

    Abstract: No abstract text available
    Text: DRAM MODULE KMM5362203AW/AWG KMM5362203AW/AWG Fast Page Mode 2Mx36 DRAM SIMM, 1K Ref, 5V, using 1Mx16 DRAM and 1Mx4 QCAS DRAM GENERAL DESCRIPTION FEATURES The Samsung KMM5362203AW is a 2M bit x 36 • Part Identification Dynam ic RAM high density m em ory module. The


    OCR Scan     		PDF KMM5362203AW/AWG KMM5362203AW/AWG 2Mx36 1Mx16 KMM5362203AW KMM5362203AW cycles/16 5362203AW tb41

    Untitled

    Abstract: No abstract text available
    Text: DRAM MODULE KMM5362205C2W/C2WG 2Mx36 DRAM SIMM 1MX 16 Base, Quad CAS EDO Revision 0.0 November 1997 Rev. 0.0 (Nov. 1997) DRAM MODULE KMM5362205C2W/C2WG Revision History Version 0.0 (November 1997) • Changed module PCB from 6-Layer to 4-Layer. • Changed Module Part No. from KMM5362205CW/CWG to KMM5362205C2W/C2WG caused by PCB revision .


    OCR Scan     		PDF KMM5362205C2W/C2WG 2Mx36 KMM5362205CW/CWG KMM5362205C2W/C2WG 1Mx16 KMM5362205C2W 2Mx36bits

    Untitled

    Abstract: No abstract text available
    Text: DRAM MODULE KMM5362203C2W/C2WG 2Mx36 DRAM SIMM 1MX16 Base Revision 0.0 November 1997 Rev. 0.0 (Nov. 1997) DRAM MODULE KMM5362203C2W/C2WG Revision History Version 0.0 (November 1997) • C ha n g ed m odule P C B from 6 -L a ye r to 4-Layer. • C ha n g ed M odule Part No. from K M M 5 3 6 2 2 0 3 C W /C W G to K M M 5 3 6 2 2 0 3 C 2 W /C 2 W G caused by P C B revision .


    OCR Scan     		PDF KMM5362203C2W/C2WG 2Mx36 1MX16 KMM5362203C2W/C2WG

    Untitled

    Abstract: No abstract text available
    Text: SAMSUNG ELECTRONICS INC b 4E D • 7T b 4142 G a m b a s KMM5362000A1/A1G 41b ■ SMGK DRAM MODULES 2M X 3 6 DRAM SIMM Memory Module FEATURES GENERAL DESCRIPTION • Performance range: The Samsung KMM5362000A1 is a 2M bitsX36 Dynamic RAM high density memory module. The Samsung


    OCR Scan     		PDF KMM5362000A1/A1G KMM5362000A1 bitsX36 20-pin 72-pin 130ns 150ns

    KMM536256

    Abstract: No abstract text available
    Text: KMM536256B DRAM MODULES 2 5 6 K X 3 6 DRAM SIMM Memory Module FEATURES GENERAL DESCRIPTION • Performance range: The Samsung KM M 536256B is a 2 6 2 ,1 4 4 bit X 36 Dynamic RAM high density memory module. The Sam­ sung KM M 536256B consist ot eight CMOS 2 5 6 K X 4


    OCR Scan     		PDF KMM536256B 536256B 20-pin 18-pin 72-pin 536256B- 130ns KMM536256

    SP16K

    Abstract: kmm5362003
    Text: SAMSUNG ELECTRONICS b?E D INC • ? cJbmHH D015BbB bS7 I KMM5362003/G SP16K DRAM MODULES 2M x36 DRAM SIMM Memory Module FEATURES GENERAL DESCRIPTION • P erform ance range: The Samsung KMM5362003/G is a 2M b itx 3 6 Dynamic RAM high density m em ory module. The Samsung


    OCR Scan     		PDF D015BbB SP16K KMM5362003/G KMM5362003-7 KMM5362003-8 110ns 150ns in20-pin SP16K kmm5362003

    KMM5362000

    Abstract: No abstract text available
    Text: KMM5362000B1/B1G DRAM MODULES 2 M X 3 6 DRAM SIMM Memory Module FEATURES GENERAL DESCRIPTION The Samsung KMM5362000B1 is a 2M bits x 36 Dynamic RAM high density memory module. The Samsung KMM5362000B1 consist of sixteen CMOS 1 Mx 4 bit DRAMs in 20-pin SOJ package and eight CMOS 1M x 1


    OCR Scan     		PDF KMM5362000B1/B1G KMM5362000B1-6 KMM5362000B1-7 KMM5362000B1-8 110ns 130ns 150ns KMM5362000B1 20-pin KMM5362000

    KMM536256B-8

    Abstract: KMM536256B LY 9525
    Text: KMM536256B DRAM MODULES 256KX36 DRAM SIM M Memory Module FEATURES GENERAL DESCRIPTION • Perform ance range: The Samsung K M M 5 3 6 2 5 6 B is a 2 6 2 ,1 4 4 bit X 3 6 Dynamic RAM high density m em ory module. The Sam­ sung K M M 5 3 6 2 5 6 B con sist of eight CMOS 2 5 6 K X 4


    OCR Scan     		PDF KMM536256B 256KX36 20-pin 18-pin 72-pin 536256B- 536256B8 130ns 150ns 180ns KMM536256B-8 KMM536256B LY 9525

    Untitled

    Abstract: No abstract text available
    Text: DRAM MODULE KMM5362203C2W/C2WG 2Mx36 DRAM SIMM 1MX16 Base Revision 0.0 November 1997 Rev. 0.0 (Nov. 1997) ELECTRONICS DRAM MODULE KMM5362203C2W/C2WG Revision History Version 0.0 (November 1997) • Changed module PCB from 6-Layer to 4-Layer. • Changed Module Part No. from KMM5362203CW /CWG to KMM5362203C2W /C2W G caused by PCB revision .


    OCR Scan     		PDF KMM5362203C2W/C2WG 2Mx36 1MX16 KMM5362203CW KMM5362203C2W KMM5362203C2W/C2WG

    KMM536256C-8

    Abstract: No abstract text available
    Text: SAMSUNG ELECTRONICS INC b?E » • 7^4145 KM M536256C/CG QQ1504Q 12 4 I SUGK DRAM MODULES 2 5 6 K X 3 6 DRAM SIMM Memory Module FEATURES GENERAL DESCRIPTION • Performance ranae: • • • • • • • tnAC •cac KMM536256C-7 70ns 20ns 130ns KMM536256C-8


    OCR Scan     		PDF QQ1504Q M536256C/CG KMM536256C-7 KMM536256C-8 130ns 150ns KMM536256C 20-pin 18-pin

    Untitled

    Abstract: No abstract text available
    Text: b7E i> S A MS UN G E L E C T R O N I C S INC 7^4142 KMM536256W/WG 0015 20 b Ô2Ô • DRAM MODULES 256Kx36 DRAM SIMM Memory Module FEATURES GENERAL DESCRIPTION • Performance range: The Samsung KMM536256W is a 256K bitsx36 Dynamic RAM high density memory module. The Samsung


    OCR Scan     		PDF KMM536256W/WG 256Kx36 KMM536256W bitsx36 256Kx18 40-pin 72-pin KMM536256W-6 110ns

    Untitled

    Abstract: No abstract text available
    Text: SAMSUNG ELECTRONICS INC b?E ]> • 71b4142 0Q151b4 54e! I KMM5362000B/BG SM6K DRAM MODULES 2 M X 3 6 DRAM SIMM Memory Module FEATURES GENERAL DESCRIPTION Performance range: tnAc tc A c tRC 60ns 15ns 110ns KM M 5362000B-7 70ns 20ns 130ns KMM5362000B-8 . 80ns


    OCR Scan     		PDF 71b4142 0Q151b4 KMM5362000B/BG 110ns 5362000B-7 130ns KMM5362000B-8 150ns KMM5362000B-6 cycles/16ms

    Untitled

    Abstract: No abstract text available
    Text: Preliminary DRAM MODULE_ KMM5362203BW/BWG KMM5362203BW/BWG Fast Page Mode 2Mx36 DRAM SIMM, 1K Ref, 5V, using 1Mx16 DRAM and 1Mx4 QCAS DRAM GENERAL DESCRIPTION FEATURES The Samsung KMM5362203BW is a 2M bit x 36 Dynamic RAM high density memory module. The


    OCR Scan     		PDF KMM5362203BW/BWG KMM5362203BW/BWG 2Mx36 1Mx16 KMM5362203BW 42-pin 24-pin 72-pin

    Untitled

    Abstract: No abstract text available
    Text: S A M S U N G E L E C T R O N I C S INC b7E » • 7 ^ 1 4 1 4 2 GÜ1S170 flH2 I KMM5362000BH SP1GK DRAM MODULES 2M x36 DRAM SIMM Memory Module This SIMM is the x3 6 built on x 40 board FEATURES GENERAL DESCRIPTION • Performance range: ÍRAC • • •


    OCR Scan     		PDF 1S170 KMM5362000BH 110ns KMM5362000BH-6 130ns KMM5362000BH-8 KMM5362000BH-7 150ns cycles/16ms KMM5362000BH

    Untitled

    Abstract: No abstract text available
    Text: KMM5362000A/AG DRAM MODULES 2M X36 DRAM SIMM Memory Module FEATURES GENERAL DESCRIPTION The Samsung KMM5362000A is a 2M bitsX36 Dynamic RAM high density memory module. The Samsung K M M 5362000A consist of sixteen CMOS 1M X 4 bit DRAMs in 20-pin SOJ package and eight CMOS 1M X 1


    OCR Scan     		PDF KMM5362000A/AG KMM5362000A bitsX36 362000A 20-pin 72-pin 362000A-

    Untitled

    Abstract: No abstract text available
    Text: Preliminary DRAM MODULE KMM5362205BW/BWG KMM5362205BW/BWG Fast Page Mode with Extended Data Out 2Mx36 DRAM SIMM, 5V, 1K Refresh using 4M Quad CAS EDO DRAM GENERAL DESCRIPTION FEATURES The Samsung KMM5362205BW is a 2M bit x 36 • Part Identification Dynamic RAM high density memory module. The


    OCR Scan     		PDF KMM5362205BW/BWG KMM5362205BW/BWG 2Mx36 KMM5362205BW 1Mx16 42-pin 24-pin 72-pin

    km44c1000cj

    Abstract: No abstract text available
    Text: / DRAM MODULE 8 Mega Byte KMM5362000C2/C2G Fast Page Mode 2Mx36 DRAM SIMM Using Parity PLCC, 5V GENERAL DESCRIPTION FEATURES The Samsung KMM5362000C2 is a 2M bit x 36 Dynamic RAM high density memory module. The Samsung KMM5362000C2 consists ot sixteen CMOS


    OCR Scan     		PDF KMM5362000C2/C2G 2Mx36 KMM5362000C2 20-pin 18-pin 72-pin km44c1000cj

    Untitled

    Abstract: No abstract text available
    Text: DRAM MODULE 8 Mega Byte KMM5362000CH Fast Page Mode / 2Mx36 DRAM SIMM with ECC, 5V V GENERAL DESCRIPTION FEATURES The Samsung KMM5362000CH is a 2M bit x 36 Dynamic RAM high density memory module. The Samsung KMM5362000CH consists of eighteen CMOS 1Mx4bit DRAMs in 20-pin SOJ packages


    OCR Scan     		PDF KMM5362000CH 2Mx36 20-pin 72-pin

    KMM536256

    Abstract: No abstract text available
    Text: DRAM MODULES KMM536256W/WG 256Kx36 DRAM SIMM Memory Module FEATURES GENERAL DESCRIPTION • Performance range: The Sam sung KMM536256W is a 256K b it x 36 Dynam ­ ic RAM high de nsity m em ory m odule. The Sam sung KMM536256W c o n sist o f tw o CMOS 2 5 6 K x 1 8 bit


    OCR Scan     		PDF KMM536256W/WG 256Kx36 KMM536256W-7 KMM536256W-8 KMM536256W-10 100ns 130ns 150ns 180ns KMM536256W KMM536256

    Untitled

    Abstract: No abstract text available
    Text: li SAMSUNG E L E C T R O N I C S M2 E INC D • Q 0 1 G 4 CÌ 0 KMM536256B T E ISMGK DRAM MODULES 2 5 6K X 36 DRAM SIMM Memory Module FEATURES GENERAL DESCRIPTION • Performance range: The Samsung KM M 536256B is a 2 6 2 ,1 4 4 bit X 36 Dynamic RAM high density memory module. The Sam­


    OCR Scan     		PDF KMM536256B 536256B 20-pin 18-pin 72-pin 130ns 536256B- 150ns

    Untitled

    Abstract: No abstract text available
    Text: SAMSUN6 ELECTRONICS INC b4E D • 7^4142 KMM5362000B1/B1G 0G14b47 G67 ■ SflGK DRAM MODULES 2 M X 3 6 DRAM SIMM Memory Module FEATURES GENERAL DESCRIPTION • Performance range: The Samsung KMM5362000B1 is a 2M bits x 36 Dynamic RAM high density memory module. The Samsung


    OCR Scan     		PDF KMM5362000B1/B1G 0G14b47 KMM5362000B1 20-pin 72-pin 22/xF KMM5362000B1-6 110ns

    D01471

    Abstract: No abstract text available
    Text: SAMSUNG ELECTRONICS INC b 4 E ]> • TTbMlME DDIMTOT 154 KM M536256W/WG SflfiK DRAM MODULES 256Kx36 DRAM SIMM Memory Module FEATURES GENERAL DESCRIPTION • Performance range: The S am sung KMM536256W is a 256K b it x 36 Dynam­ ic RAM high d e n sity m em ory m odule. The Sam sung


    OCR Scan     		PDF M536256W/WG 256Kx36 KMM536256W M536256W 40-pin 72-pin 22fiF KMM536256W-7 130ns KMM536256W-8 D01471

    Untitled

    Abstract: No abstract text available
    Text: KMM5362000A/AG/A1 /A1G DRAM MODULES 2 M X 3 6 DRAM SIMM Memory Module FEATURES GENERAL DESCRIPTION • Performance range: The Samsung KM M 5362000A is a 2M bitsX36 Dynamic RAM high density memory module. The Samsung K M M 5362000A consist of sixteen CMOS 1 M X 4 bit


    OCR Scan     		PDF KMM5362000A/AG/A1 362000A bitsX36 20-pin 72-pin 130ns 362000A- 150ns

    KMM5362

    Abstract: KMM536256BW KMM536256B
    Text: DRAM MODULE_/ _ 1 Mega Byte J KMM536256BW/BWG Fast Page Mode 256Kx36 DRAM SIMM Using 256Kx18 DRAM, 5V G E N E R A L D ESCRIPTIO N FEATURES The Samsung KMM536256BW is a 256K bit x 36 Dynamic RAM high density memory module. The • Performance Range:


    OCR Scan     		PDF KMM536256BW/BWG KMM536256BW 110ns 130ns 150ns 256Kx36 256Kx18 KMM5362 KMM536256B