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    KM68B Price and Stock

    Samsung Semiconductor KM68B1002-12TD

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    Bristol Electronics KM68B1002-12TD 1,062
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    Samsung Semiconductor KM68B1002J-12

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    Bristol Electronics KM68B1002J-12 772
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    Quest Components KM68B1002J-12 82
    • 1 $13.005
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    Chip 1 Exchange KM68B1002J-12 102
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    Samsung Semiconductor KM68B1002J-10

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    Quest Components KM68B1002J-10 91
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    KM68B1002J-10 1
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    Samsung Semiconductor KM68B261AJ-7

    32KX8 STANDARD SRAM, 7ns, PDSO32
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    Quest Components KM68B261AJ-7 4,000
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    Samsung Semiconductor KM68BV4002J-15

    512K X 8 STANDARD SRAM, 15 ns, PDSO36
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    Quest Components KM68BV4002J-15 3,036
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    KM68B Datasheets (13)

    Part ECAD Model Manufacturer Description Curated Datasheet Type PDF
    KM68B1002J-10 Samsung Electronics 128K x 8-Bit High Speed BiCMOS Static RAM Scan PDF
    KM68B1002J-12 Samsung Electronics 128K x 8-Bit High Speed BiCMOS Static RAM Scan PDF
    KM68B1002J-15 Samsung Electronics 128K x 8-Bit High Speed BiCMOS Static RAM Scan PDF
    KM68B1002J-8 Samsung Electronics 128K x 8-Bit High Speed BiCMOS Static RAM Scan PDF
    KM68B261A-6 Samsung Electronics 32K x 8 Bit High-Speed BiCMOS Static RAM Original PDF
    KM68B261A-7 Samsung Electronics 32K x 8 Bit High-Speed BiCMOS Static RAM Original PDF
    KM68B261A-8 Samsung Electronics 32K x 8 Bit High-Speed BiCMOS Static RAM Original PDF
    KM68B261AJ-6 Samsung Electronics 32K x 8-Bit High Speed BiCMOS Static RAM Scan PDF
    KM68B261AJ-7 Samsung Electronics 32K x 8-Bit High Speed BiCMOS Static RAM Scan PDF
    KM68B261AJ-8 Samsung Electronics 32K x 8-Bit High Speed BiCMOS Static RAM Scan PDF
    KM68B4002J-10 Samsung Electronics 512K x 8 Bit high Speed BiCMOS Static RAM Scan PDF
    KM68B4002J-12 Samsung Electronics 512K x 8 Bit high Speed BiCMOS Static RAM Scan PDF
    KM68B4002J-15 Samsung Electronics 512K x 8 Bit high Speed BiCMOS Static RAM Scan PDF

    KM68B Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    KM68B261A-6

    Abstract: KM68B261A-7 KM68B261A-8 Static Random Access Memory
    Text: KM68B261A BiCMOS SRAM 32Kx8 Bit High Speed BiCMOS Static RAM FEATURES GENERAL DESCRIPTION • Fast Access Time 6, 7, 8 ns Max. • Low Power Dissipation Standby (TT L): 110 mA (Max.) (CMO S): 20 mA (Max.) Operating Current: 170 mA (f=100MHz) • Single 5V±5%T>ower Supply


    OCR Scan     		PDF KM68B261A 32Kx8 100MHz) KM68B261AJ SOJ-300 KM68B261A 144-bit 0D237Sb KM68B261A-6 KM68B261A-7 KM68B261A-8 Static Random Access Memory

    KM68BV4002

    Abstract: No abstract text available
    Text: KM68BV4002 BiCMOS SRAM D o cu m e n t Title 512K x8 Bit High Speed Static RAM 3.3V Operating , Revolutionary Pin out. Operated at Com m ercial Tem perature Range. R evision H istory R em ark R ev No. H isto ry Rev. 0.0 Initial release w ith Design T arget.


    OCR Scan     		PDF KM68BV4002 512Kx8 10/12/15ns 12/15/20ns 12/15/20ns 0/12ns 36-SOJ-400 KM68BV4002

    KM68BV4002

    Abstract: KM68BV4002J-12 KM68BV4002J-15 36-SOJ ttl 74142
    Text: Advanced Information KM68BV4002 BiCMOS SRAM 524,288 WORD x 8 Bit High-Speed BiCMOS Static RAM 3.3V Operating FEATURES GENERAL DESCRIPTION • Fast Access Time : 12, 15, 20ns Max. • Low Power Dissipation Standby (TTL) : 60mA(Max.) (CMOS) : 30mA(Max.) Operating KM68BV4002J-12: 165mA(Max.)


    OCR Scan     		PDF KM68BV4002 KM68BV4002J-12 165mA KM68BV4002J-15 160mA KM68BV4002J-20 155mA KM68BV4002J 36-SOJ KM68BV4002 ttl 74142

    KM68B4002J-10

    Abstract: KM68B4002J-12 KM68B4002J-15
    Text: PRELIMINARY KM68B4002 BiCMOS SRAM 512K x 8 Bit High Speed BiCMOS Static RAM FEATURES GENERAL DESCRIPTION • Fast Access Tim e 10,1 2,15 ns M ax. Th e K M 68B 4002 is a 4 ,1 9 4,30 4 -b it • Low Pow er Dissipation Random Access M em ory organized as 5 2 4 ,2 8 8 words


    OCR Scan     		PDF KM68B4002 KM68B4002J-10 KM68B4002J-12: KM68B4002J-15 KM68B4002J: 36-SOJ-4QO KM68B4002 304-bit KM68B4002J-10 KM68B4002J-12 KM68B4002J-15

    KM68BV4002

    Abstract: No abstract text available
    Text: KM68BV4002 CMOS SRAM 512K x 8Bit High-Speed BiCMOS Static RAM 3.3V Operating FEATURES GENERAL DESCRIPTION • Fast Access Time 12,13,15 ns(Max.) • Low Power Dissipation Standby (TTL) : 60 mA(Max.) (CMOS): 30 mA(Max.) Operating KM68BV4002-12:170mA(Max.)


    OCR Scan     		PDF KM68BV4002 512Kx KM68BV4002-12 170mA KM68BV4002 KM68BV4002-15 160mA KM68BV4002J 36-SOJ-400

    KM68B1002J-10

    Abstract: KM68B1002J-8 KM68B1002J-12 KM68B1002J-15
    Text: SAMSUNG ELECTRONICS INC b?E d m 7Tb4me oanb^i ^bb BiCMOS SRAM KM68B1002 131,072 WORD x 8 Bit Ultra High-Speed BiCMOS Static RAM GENERAL DESCRIPTION FEATURES • Fast Access Time: 8, 9 ,1 0 ,1 2 , 15ns Max. • Low Power Dissipation Standby (TTL) : 60mA (Max.)


    OCR Scan     		PDF KM68B1002 KM68B1002J-8 175mA KM68B1002J-9 KM68B1002J-10: 165mA KM68B1002J-12: 155mA KM68B1002J-15 KM68B1002J-10 KM68B1002J-12

    KM68B261A-6

    Abstract: KM68B261A-7 KM68B261A-8
    Text: SAMSUNG ELECTRONICS INC b?E D • 7*^4142 □□175^4 7 C]4 SUGK PRELIMINARY KM68B261A BiCMOS SRAM 32,768 WORD x 8 Bit High-Speed CMOS Static RAM FEATURES GENERAL DESCRIPTION • Fast Access Time: 6 , 7, 8 ns max. • Low Power Dissipation Standby (TTL)


    OCR Scan     		PDF KM68B261A 7Tb4142 170mA KM68B261A 144-bit 0017t 300mil) KM68B261A-6 KM68B261A-7 KM68B261A-8

    Untitled

    Abstract: No abstract text available
    Text: KM68B257A BiCMOS SRAM 32,768 WORD x 8 Bit High Speed BiCMOS Static RAM FEATURES GENERAL DESCRIPTION • Fast Access Time: 8, 9 ,1 0 ,12ns Max. • Low Power Dissipation Standby (TTL) : 110mA (max.) (CMOS): 20mA (max.) Operating KM68B257AJ-8:185mA (Max.)


    OCR Scan     		PDF KM68B257A 110mA KM68B257AJ-8 185mA KM68B257AJ-9 KM68B257AJ-10 175mA KM68B257AJ-12 165mA

    Untitled

    Abstract: No abstract text available
    Text: KM68B257A BiCMOS SRAM 32Kx8 Bit High Speed BiCMOS Static RAM FEATURES GENERAL DESCRIPTION • Fast Access Tim e 8 ,1 0 ,1 2 ns Max. • Low Power Dissipation Standby (T T L ): 110 mA (Max.) (C M O S ): 20 mA (Max.) Operating K M 68B 257A J-8 :1 8 5 mA (Max.)


    OCR Scan     		PDF KM68B257A 32Kx8 KM68B257AJ-10 KM68B257AJ-12 KM68B257AJ 28-pin KM68B257A 144-bit

    Untitled

    Abstract: No abstract text available
    Text: PRELIMINARY KM68B4002 BiCMOS SRAM 512K x 8 Bit High Speed BiCMOS Static RAM FEATURES GENERAL DESCRIPTION • Fast Access Time 10,12,15 ns Max. • Low Power Dissipation The KM68B4002 is a 4,194,304-bit high-speed Static Random Access Memory organized as 524,288 words


    OCR Scan     		PDF KM68B4002 KM68B4002 304-bit KM68B4002J-10 KM68B4002J-12: KM68B4002J-15 190mA KM68B4002J: 36-SOJ-400

    Untitled

    Abstract: No abstract text available
    Text: SAM S UN G E L E C T R O N I C S INC b?E D • 7 T b 4 1 4 2 0 0 1 7 5 ^ 4 7^4 PRELIMINARY KM68B261A BiCMOS SRAM 32,768 WORD X 8 Bit High-Speed CMOS Static RAM FEATURES GENERAL DESCRIPTION • Fast Access Time: 6, 7, 8 ns max. • Low Power Dissipation Standby (TTL)


    OCR Scan     		PDF KM68B261A 170mA KM68B261A 144-bit 300mil)

    68B1002J-12

    Abstract: No abstract text available
    Text: fÇ? SAMSUNG KM68B1002 131,072 WORD X 8 Bit APRIL 1992 GENERAL DESCRIPTION FEATURES T h l K M 68B1002 is a 1 ,048,576-bit high­ speed static random access m em ory o r­ ganized as 131,072 words by 8 bit. T he K M 68B1002 uses eight com m on input and output lines and has an output enable pin


    OCR Scan     		PDF KM68B1002 68B1002 576-bit 400mil 32-pin 68B1002J-12

    Untitled

    Abstract: No abstract text available
    Text: SAMSUNG ELECTRONICS INC 42E » 7=^4142 DQIOTST G ÊSSMGK P R ELIM INA R Y “ BiCMOS SRAM KM68B257 3 2 K X 8 Bit BiCMOS Static RAM FEATURES GENERAL DESCRIPTION • Ultra-Fast Access Time —Commercial: 10ns, 12ns, 15ns —6ns Output Enable time • Low Power Dissipation


    OCR Scan     		PDF KM68B257 195mA, 175mA, 150mA 28-pin 28-pln KM68B257 144-bit

    Untitled

    Abstract: No abstract text available
    Text: SAMSUNG ELECTRONICS INC b?E T> 7 *îb4 m s 0P17S1S bSO • SMGK PRELIMINARY BiCMOS SRAM KM68B261A ABSOLUTE MAXIMUM RATINGS* Item Voltage on Any Pin Relative to Vss Voltage on Vcc Supply Relative to VSs Power Dissipation Storage Temperature Operating Temperature


    OCR Scan     		PDF 0P17S1S KM68B261A D2957, APRIL1993 bl723 0DT42H5

    Untitled

    Abstract: No abstract text available
    Text: PRELIMINARY KM68B261A BiCMOS SRAM 32,768 WORD x 8 Bit High-Speed CMOS Static RAM FEATURES GENERAL DESCRIPTION • Fast Access Time: 6, 7, 8 ns max. • Low Power Dissipation Standby (TTL) : 90mA (max.) (CMOS): 20mA (max.) • Operating Current : 170mA (1 = 100 MHz.)


    OCR Scan     		PDF KM68B261A 170mA KM68B261A 144-bit 300mil)

    Untitled

    Abstract: No abstract text available
    Text: BiCMOS SRAM KM68BV4002 Document Title 512Kx8 Bit High Speed Static RAM 3.3V Operating , Revolutionary Pin out. Operated at Commercial Temperature Range. R evision H istory RevNo. History Rev. 0.0 Initial release with Design Target. Oct. 14th, 1993 Design Target


    OCR Scan     		PDF KM68BV4002 512Kx8 10/12/15ns 12/15/20ns 8/10/12ns 36-SOJ-400

    KM68B257AJ-8

    Abstract: A26cl
    Text: PRELIMINARY KM68B257A BiCMOS SRAM 32,768 WORD x 8 Bit High Speed BiCMOS Static RAM FEATURES GENERAL DESCRIPTION • Fast Access Time: 8, 10, 12ns max. • Low Power Dissipation Standby (TTL) : 90mA (max.) (CMOS): 20mA (max.) Operating KM68B257AJ-8: 185mA (max.)


    OCR Scan     		PDF KM68B257A KM68B257AJ-8: 185mA KM68B257AJ-10: 175mA KM68B257AJ-12: 165mA KM68B257AJ: 28-pin KM68B257A KM68B257AJ-8 A26cl

    IC 74142

    Abstract: No abstract text available
    Text: -5J SAMSUNG K M 6 8 B 1001 \0 ELECTRONICS 131,072 WORD X 8 Bit APRIL 1992 GENERAL DESCRIPTION FEATURES The KM68B1001 is a 1,048,576-bit high­ speed static random access memory organized as 131,072 words by 8 bit. The device is fabricated using Samsung's advanced BiCMOS process and designed or


    OCR Scan     		PDF KM68B1001 576-bit 400mil 32-pin KM68B1001P/J-12 180mA KM68B1001P/J-15 160mA KM68B1001 IC 74142

    Untitled

    Abstract: No abstract text available
    Text: KM68BV4002 BiCMOS SRAM 512K x 8 Bit High-Speed CMOS Static RAM 3.3V Operating FEATURES G E N E R A L D E S C R IP T IO N • Fast Access Time 12,13,15ns{Max.) • Low Power Dissipation Standby (TTL) : 60mA(Max.) (CMOS) : 30mA(Max.) Operating KM68BV4002 - 1 2 : 170mA(Max.)


    OCR Scan     		PDF KM68BV4002 KM68BV4002 170mA 165mA KM66BV4002 160mA 304-bit

    Untitled

    Abstract: No abstract text available
    Text: KM68B261A BiCMOS SRAM 32Kx8 Bit High Speed BiCMOS Static RAM FEATURES GENERAL DESCRIPTION • Fast Access Time 6, 7, 8 ns Max. • Low Power Dissipation Standby (TTL) : 110 mA (Max.) (CMOS) : 20 mA (Max.) Operating C urrent: 170 mA (f= 100MHz) • Single S V iS ^ il^ o w e r S upply


    OCR Scan     		PDF KM68B261A 32Kx8 100MHz) KM68B261AJ SOJ-300 KM68B261A 144-bit

    KM68BV4002

    Abstract: KM68BV4002-15
    Text: KM68BV4002 BiCMOS SRAM 512K x 8 Bit High Speed BiCMOS Static RAM 3.3V Operating FEATURES GENERAL DESCRIPTION • Fast Access Time 12,13,15 ns(Max.) » Low Power Dissipation Standby (TTL) : 60 mA(Max.) (CMOS): 30 mA(Max.) Operating KM68BV4002-12 :170 mA(Max.)


    OCR Scan     		PDF KM68BV4002 KM68BV4002-12 KM68BV4002-13: KM68BV4002-15 KM68BV4002J: 36-SCU-400 KM68BV4002 304-bit 71b4142 KM68BV4002-15

    KM68B4002J-12

    Abstract: KM68B4002J-15
    Text: KM68B4002 CMOS SRAM 512 K x 8Bit High-Speed BiCMOS Static RAM FEATURES GENERAL DESCRIPTION • Fast Access Time 12,13,15 ns Max. • Low Power Dissipation Standby (TTL) : 60 mA(Max) (CMOS): 30 mA(Max.) Operating KM68B4002J-12:195mA(Max.) KM68B4002J-13:195 mA(Max.)


    OCR Scan     		PDF KM68B4002 512Kx KM68B4002J-12 195mA KM68B4002J-13 KM68B4002J-15 KM68B4002J 36-SOJ-400 KM68B4002 304-bit

    Untitled

    Abstract: No abstract text available
    Text: BiCMOS SRAM KM68B1002 128Kx8 Bit High-Speed BiCMOS Static RAM FEATURES GENERAL DESCRIPTION The KM68B1002 is a 1,048,576-bit high-speed static random access memory organized as 131,072 words by 8 bits. The KM68B1002 uses eight common Input and output lines and has an output enable pin which operates


    OCR Scan     		PDF KM68B1002 128Kx8 KM68B1002 576-bit 32-pin 00S37B3

    Untitled

    Abstract: No abstract text available
    Text: PRELIMINARY BiCMOS SRAM KM68B4002 524,288 WORD x 8 Bit High-Speed BiCMOS Static RAM FEATURES GENERAL DESCRIPTION • Fast Access Time : 10ns, 12ns, 15ns • Low Power Dissipation Standby TTL : 60mA (CMOS) : 30mA Operating KM68B4002J-10 : 200mA(Max.) KM68B4002J-12 : 195mA(Max.)


    OCR Scan     		PDF KM68B4002 KM68B4002J-10 200mA KM68B4002J-12 195mA KM68B4002J-15 190mA KM68B4002J 36-SOJ-4QO KM68B4002