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    Abstract: No abstract text available
    Text: b?E V SAMSUNG ELECTRONICS INC m 7 ^ 4 1 4 5 00174^4 flG3 I ISM6K KM68512L/L-L CMOS SRAM 65,536 WORD x 8 Bit High Speed CMOS Static RAM FEATURES GENERAL DESCRIPTION • Fast Access Time 55, 70, 85, 100ns max. • Low Power Dissipation Standby (CMOS): 10^W (typ.) L-Version


    OCR Scan     		PDF KM68512L/L-L 100ns KM66512LG/LG-L: 32-pin 525mil) KM68512LT/LT-L: KM68512L/L-L 288-bit KM68512Ã

    KM6651

    Abstract: cs250 KM68512ALI SRAM 64KX8 5V
    Text: KM68512ALI / ALI-L CMOS SRAM 64Kx8 Bit Industrial Temperature Range Operating Static RAM FEATURES GENERAL DESCRIPTION • Industrial Temperature Range : -40 to 8 5 “C • Fast Access Time : 70,100 ns{Max. • Low Power Dissipation Standby C M O S ): 550^W(Max.)L-Ver.


    OCR Scan     		PDF KM68512ALI 64Kx8 385mW KM68512ALGI/ALGI-L 32-pin 525mil) KM68512ALTI/ALTI-L KM68512ALI/ALI-L 288-bit KM6651 cs250 SRAM 64KX8 5V

    km68512lg

    Abstract: ob2535 cs250 KM68512LT 10MW KM6651
    Text: SAMSUNG ELECTRONICS INC b?E J> m 7^4142 KM68512ÜL-L 00174^4 ÖQ3 « S Í I G * CMOS SRAM 65,536 WORD x 8 Bit High Speed CMOS Static RAM FEATURES GENERAL DESCRIPTION • Fast A ccess Tim e 55, 70, 85, 100ns max. • Low P ow er D issipa tion S tandby (CMOS): 10^W (typ.) L V ersion


    OCR Scan     		PDF KM68512Ã 100ns KM68512LG/LG-L: 32-pin 525mil) KM68512LT/LT-L: KM68512UL-L 288-bit KM68512L/L-L km68512lg ob2535 cs250 KM68512LT 10MW KM6651