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    KM64B261A Search Results

    KM64B261A Datasheets (3)

    Part ECAD Model Manufacturer Description Curated Type PDF
    KM64B261AJ-6 Samsung Electronics 64K x 4-Bit (with OE) High Speed BiCMOS Static RAM Scan PDF
    KM64B261AJ-7 Samsung Electronics 64K x 4-Bit (with OE) High Speed BiCMOS Static RAM Scan PDF
    KM64B261AJ-8 Samsung Electronics 64K x 4-Bit (with OE) High Speed BiCMOS Static RAM Scan PDF

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    Untitled

    Abstract: No abstract text available
    Text: KM64B261A BiCMOS SRAM 65,536 WORD x 4 Bit High-Speed BiCMOS Static RAM FEATURES GENERAL DESCRIPTION • Fast Access Time: 6, 7, 8 ns max. • Low Power Dissipation Standby (TTL) : 90mA (max.) (CM O S): 20mA (max.) • Operating Current : 160mA (f = 100 MHz.)


    OCR Scan     		PDF KM64B261A 160mA 28-SOJ-3QO KM64B261A 144-bit 200mV

    Untitled

    Abstract: No abstract text available
    Text: KM64B261A BiCMOS SRAM 64Kx4 Bit With OE High speed BiCMOS Static RAM FEATURES GENERAL DESCRIPTION • Fast Access Time 6, 7, 8 ns (Max.) • Low Power Dissipation Standby (TTL) : 90 mA (Max.) (CMOS) : 20 mA (Max.) Operating Current: 160 mA (f=100MHz) • Single 5V±5% Power Supply


    OCR Scan     		PDF KM64B261A 64Kx4 100MHz) KM64B261AJ 28-SOJ-300 KM64B261A 144-bit 7Tb414a

    Untitled

    Abstract: No abstract text available
    Text: KM64B261A BiCMOS SRAM 64Kx4 Bit With UE High Speed BiCMOS Static RAM FEATURES GENERAL DESCRIPTION • F as t A c c e s s T im e 6, 7 , 8 ns (M a x .) T h e K M 6 4 B 2 6 1 A is a 2 6 2 ,1 4 4 -b it h ig h -s p e e d S ta tic • L o w P o w e r D iss ip a tio n


    OCR Scan     		PDF KM64B261A 64Kx4

    Untitled

    Abstract: No abstract text available
    Text: KM64B261A BiCMOS SRAM 64Kx4 Bit With OE High speed BiCMOS Static RAM FEATURES GENERAL DESCRIPTION • Fast Access Time 6, 7, 8 ns (Max.) • Low Power Dissipation Standby (TTL) : 90 mA (Max.) (CMOS) : 20 mA (Max.) Operating Current: 160 mA (f=100MHz) • Single 5V±5% Power Supply


    OCR Scan     		PDF KM64B261A 64Kx4 100MHz) KM64B261AJ 28-SQJ-300 KM64B261A 144-bit

    SOJ 44

    Abstract: 1MX1 KM6865
    Text: FUNCTION GUIDE MEMORY ICs High speed & Ultra High Speed SRAM Den. Part Name 64K KM6465B/BL KM6466B/BL KM6865B/BL KM64258B KM64258C KM64V258C KM64B258A KM64B261A KM68257B/BL KM68257C/CL KM68V257C/CL KM68B257A KM68B261A KM69B257A KM616513 KM616V513 KM611001


    OCR Scan     		PDF KM6465B/BL KM6466B/BL KM6865B/BL KM64258B KM64258C KM64V258C KM64B258A KM64B261A KM68257B/BL KM68257C/CL SOJ 44 1MX1 KM6865

    Untitled

    Abstract: No abstract text available
    Text: SAM SUN G E L E C T R O N I C S INC b7E D • T'ìbHlHS Q G 1 7 S 7 3 TbT ■ SMóK PRELIMINARY KM64B261A BiCMOS SRAM 65,536 WORD x 4 B it High-Speed BiCMOS Static RAM FEATURES GENERAL DESCRIPTION • Fast Access Time: 6, 7, 8 ns max. • Low Power Dissipation


    OCR Scan     		PDF KM64B261A 160mA KM64B261A 144-bit 300mil) 004max

    Untitled

    Abstract: No abstract text available
    Text: KM64B261A BiCMOS SRAM 64K x 4 Bit High-Speed BiCMOS Static RAM GENERAL DESCRIPTION FEATURES Fast Access Time 6, 7, 8 § Max. Low Power Dissipation Standby (TTL) (CMOS) : 90§ (Max.) : 2 0 § (Max.) Operating Current : 160§ (f=100MHz) Single 5.0V±5% Power Supply


    OCR Scan     		PDF KM64B261A 100MHz) KM64B261AJ 28-SOJ-3QO KM64B261A 144-bit May-1997 28-SOJ-300

    GDS3712

    Abstract: D023
    Text: KM64B261A BiCMOS SRAM 64Kx4 Bit With UE High Speed BiCMOS Static RAM FEATURES GENERAL DESCRIPTION • Fast Access Time 6, 7, 8 ns (Max.) • Low Power Dissipation Standby (TTL) : 90 mA (Max.) (CMOS) : 20 mA (Max.) Operating Current: 160 mA (f=100MHz) • Single 5V±5% Power Supply


    OCR Scan     		PDF KM64B261A 64Kx4 100MHz) KM64B261AJ 28-SOJ-3QO KM64B261A 144-bit GDS3712 D023

    Untitled

    Abstract: No abstract text available
    Text: KM64B261A BiCMOS SRAM 65,536 WORD x 4 Bit High-Speed BiCMOS Static RAM FEATURES GENERAL DESCRIPTION • Fast Access Time: 6, 7, 8 ns max. • Low Power Dissipation Standby (TTL) : 90mA (max.) (CMOS): 20mA (max.) • Operating Current : 160mA (1 = 100 MHz.)


    OCR Scan     		PDF KM64B261A 160mA 28-SOJ-3QO KM64B261A 144-bit fabricated61A 200mV

    Untitled

    Abstract: No abstract text available
    Text: PRELIMINARY KM64B261A BiCMOS SRAM 65,536 WORD x 4 Bit High-Speed BiCMOS Static RAM FEATURES GENERAL DESCRIPTION • Fast Access Time: 6, 7, 8 ns max. • Low Power Dissipation Standby (TTL) : 90mA (max.) (CMOS): 20mA (max.) • Operating Current : 160mA (1 = 100 MHz.)


    OCR Scan     		PDF KM64B261A 160mA KM64B261A 144-bit 300mil)

    Untitled

    Abstract: No abstract text available
    Text: KM64B261A BiCMOS SRAM 64Kx4 Bit With UB High Speed BiCMOS Static RAM FEATURES GENERAL DESCRIPTION • Fast Access Tim e 6, 7, 8 ns (Max.) • Low Power Dissipation Standby (TTL) : 90 mA (Max.) (CMOS) : 20 m A (Max.) Operating Current: 160 m A (f=100MHz)


    OCR Scan     		PDF KM64B261A 64Kx4 100MHz) KM64B261AJ 28-SOJ-300 KM64B261A 144-bit

    Untitled

    Abstract: No abstract text available
    Text: KM64B261A BiCMOS SRAM 65,536 WORD x 4 Bit High-Speed BiCMOS Static RAM FEATURES GENERAL DESCRIPTION • Fast Access Time: 6, 7, 8 ns max. • Low Power Dissipation Standby (TTL) : 90mA (max.) (CM O S): 20mA (max.) • Operating Current : 160mA (f = 100 MHz.)


    OCR Scan     		PDF KM64B261A 160mA 28-SQJ-300 KM64B261A 144-bit 200mV

    23C1001

    Abstract: KMM5334100 km 23c 4000B KMM5362003C KM681001-25 KM68V257 KM428V256 23c4001 4100C M681000
    Text: FUNCTION GUIDE MEMORY ICs 1. INTRODUCTION 1.1 Dynamic RAM 1Mx1 KM41C1000C-6 KM41C1000CL-6 KM41C1000CSL-6 256Kx4 4Mbit— 4Mx1 KM44C256C-6 KM44C256CL-6 KM44C256CL-7 KM 44C256CL-8 - KM44C256CSL-6 KM44C256CL-7 KM 44C256CL-8 — KM41C4000C-7 — KM41C4000C-8 KM41C4000C-5


    OCR Scan     		PDF KM41C1000C-6 KM41C1000CL-6 KM41C1000CSL-6 256Kx4 KM44C256C-6 KM44C256CL-6 KM44C256CL-7 44C256CL-8 KM44C256CSL-6 23C1001 KMM5334100 km 23c 4000B KMM5362003C KM681001-25 KM68V257 KM428V256 23c4001 4100C M681000

    KM616V4002A

    Abstract: 6161002 ER255 KM732V589
    Text: TABLE OF CONTENTS I. FUNCTION GUIDE 1. Product Guide. 11 2. Ordering Inform ation. 15


    OCR Scan     		PDF KM62256C 128Kx KM68512A KM681000B KM681000C2 KM718B90 KM718BV87AT KM732V588 KM732V589/L. KM716V689 KM616V4002A 6161002 ER255 KM732V589

    KM616U1000BL-L

    Abstract: No abstract text available
    Text: MEMORY ICs FUNCTION GUIDE 1. Low Power SRAM 5V Operation Den. 256K Org. 32K X 8 Op. Temp Speed KM62256CL KM62256CL-L 0 -7 0 ’ C 4 5/55/70 KM62256CLE -2 5 -8 5 =C KM62256CLI KM62256CLI-L -4 0 -8 5 °C 1M 64K X 8 KM68512CL KM68512CL-L 0 -7 0 ‘ C KM68512CLI


    OCR Scan     		PDF KM62256CL KM62256CL-L KM62256CLE KM62256CLE-L KM62256CLI KM62256CLI-L 28-TSOP 28-DIP 28-SOP KM68512CL KM616U1000BL-L

    KM68512

    Abstract: 12BKX8 km6865b
    Text: MEMORY ICs FUNCTION GUIDE 1. INTRODUCTION 1.1 Dynamic RAM CMOS n— — 256K bit 1M bit 105 ELECTRONICS MEMORY ICs — FUNCTION GUIDE 4M bit 106 ELECTRONICS MEMORY ICs FUNCTION GUIDE 107 ELECTRONICS MEMORY ICs FUNCTION GUIDE CM O S 108 ELECTRONICS MEMORY ICs


    OCR Scan     		PDF 010/J/T KM68512 12BKX8 km6865b

    al 232 nec

    Abstract: TC55B4257 MB832001 NM9306 eeprom Cross Reference D41264 TC5116100 HN28C256 NM9307 oki cross reference
    Text: CROSS REFERENCE GUIDE MEMORY ICs CROSS REFERENCE GUIDE 1 .DRAM Density 256K Org. X1 x4 1M x1 X4 4M X1 x4 Mode Toshiba Hitachi Fujitsu NEC Oki MSM51C256 F.Page KM41C256 TC51256 HM51256 MB81256 Nibble KM41C257 TC51257 — MB81257 — S. Column KM41C258 TC51258


    OCR Scan     		PDF KM41C256 KM41C257 KM41C258 KM41C464 KM41C466 KM41C1000 KM41C1001 KM41C1002 KM44C256 KM44C258 al 232 nec TC55B4257 MB832001 NM9306 eeprom Cross Reference D41264 TC5116100 HN28C256 NM9307 oki cross reference