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    KM641001P Search Results

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    KM641001P Price and Stock

    Samsung Semiconductor KM641001P-35

    256K X 4 STANDARD SRAM, 35 ns, PDIP28
    Distributors Part Package Stock Lead Time Min Order Qty Price Buy
    Quest Components KM641001P-35 52
    • 1 $12
    • 10 $9
    • 100 $7.8
    • 1000 $7.8
    • 10000 $7.8
    Buy Now

    Samsung Semiconductor KM641001P-20

    Static RAM, 256Kx4, 28 Pin, Plastic, DIP
    Distributors Part Package Stock Lead Time Min Order Qty Price Buy
    Quest Components KM641001P-20 28
    • 1 $10
    • 10 $10
    • 100 $10
    • 1000 $10
    • 10000 $10
    Buy Now

    KM641001P Datasheets Context Search

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    Untitled

    Abstract: No abstract text available
    Text: CMOS SRAM KM641001 25 6K X 4 Bit High-Speed CMOS Static RAM FEATURES GENERAL DESCRIPTION • Fast A ccess Tim e 20,25,35ns max. • Low Power Dissipation Standby (TTL) : 40m A (max.) (CMOS) : 2m A (max.) Operating KM641001P/J-20: 150m A (max) K M 641001P/J-25: 130m A (max)


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    PDF KM641001 KM641001P/J-20: 641001P/J-25: KM641001P/J-35: KM641001P: 28-pin 641001J: piM641001

    Untitled

    Abstract: No abstract text available
    Text: KM641001 CMOS SRAM 2 5 6 K X 4 Bit High-Speed CMOS Static RAM FEATURES GENERAL DESCRIPTION • Fast Access Time 20,25,35ns max. • Low Power Dissipation Standby (TTL) : 40mA (max.) (CMOS) : 2mA (max.) Operating KM641001P/J-20: 150mA (max) KM641001P/J-25: 130mA (max)


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    PDF KM641001 KM641001P/J-20: 150mA KM641001P/J-25: 130mA KM641001P/J-35: 110mA KM641001P: 28-pin 400mil)

    KM641001

    Abstract: No abstract text available
    Text: KM641001 CMOS SRAM 2 5 6 K X 4 Bit High-Speed CMOS Static RAM FEATURES G E N E R A L D E S C R IP T IO N • Fast Access Tim e 20,25,35ns max. • Low Power Dissipation Standby (TTL) : 40mA (max.) (CMOS) : 2mA (max.) Operating KM641001P/J-20: 150mA (max)


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    PDF KM641001 KM641001P/J-20: 150mA 1P/J-25: 130mA 1P/J-35: 641001P: 28-pin KM641001J: KM641001

    KM641001

    Abstract: No abstract text available
    Text: KM641001 CMOS SRAM 256Kx 4 Bit With UE High-Speed CMOS Static RAM FEATURES GENERAL DESCRIPTION • Fast Access Time 20,25,35 ns(Max.) • Low Power Dissipation Standby (TTL) : 40 mA(Max.) The KM641001 is a 1,048,576-bit high-speed Static Random Access Memory organized as 262,144 words


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    PDF KM641001 256Kx KM641001 576-bit KM641001-20 KM641001-25: 130mA

    KM641001

    Abstract: No abstract text available
    Text: CMOS SRAM KM641001 262,144 WORD x 4 Bit High-Speed CMOS Static RAM FEATURES GENERAL DESCRIPTION • Fast Access Time : 2 0 ,2 5 ,35ns max. • Low Power Dissipation Standby (TTL) : 40mA (max.) (CMOS) : 2mA (max) Operating : KM641001 -20 :1 50mA (max.) KM641001 -25 : 130mA (max.)


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    PDF KM641001 KM641001 130mA KM641001-35: 110mA KM641001P 28-DIP-400 KM641001J 28-SQJ-400

    KM641001

    Abstract: KM641001-25 km641001j KM641001-35 741-145
    Text: CM O S SRAM KM 641001 262,144 WORD x 4 Bit High-Speed CMOS Static RAM FEATURES GENERAL DESCRIPTION • Fast A c c e s s T im e : 2 0 ,2 5 ,35ns max. • L o w P o w e r D issipation S tand by (TTL) : 40m A (max.) (CMOS) : 2m A (max) O pe rating : KM641001 -20 : 150m A (max.)


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    PDF KM641001 KM641001 150mA KM641001-25 130mA KM641001-35 110mA KM641001P 28-DIP-400 KM641001J km641001j 741-145

    Untitled

    Abstract: No abstract text available
    Text: CMOS SRAM KM641001 256K x 4 Bit With UB High-Speed CMOS Static RAM FEATURES GENERAL DESCRIPTION • Fast Access Time 20,25,35 ns(Max.) The KM641001 is a 1,048,576-bit • Low Power Dissipation Random Access Memory organized as 262,144 words Standby (TTL)


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    PDF KM641001 KM641001 576-bit

    Untitled

    Abstract: No abstract text available
    Text: SAM S UN G E L E C T R O N I C S INC b?E D m 7 T b 4 m 2 D017bMfl 7^5 KM641001 CMOS SRAM 2 5 6 K X 4 Bit High-Speed CMOS Static RAM FEATURES GENERAL DESCRIPTION • Fast Access Time 1 7 ,2 0 ,2 5 ,30ns Max. • Low Power Dissipation Standby (TTL) : 40mA (max.)


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    PDF D017bMfl KM641001 KM641001P/J-17 KM641001P/J-20 150mA KM641001P/J-25 130mA KM641001P/J-30 110mA KM641001P:

    Untitled

    Abstract: No abstract text available
    Text: CMOS SRAM KM641001 262,144 WORD x 4 Bit High-Speed CMOS Static RAM FEATURES GENERAL DESCRIPTION • Fast Access Time : 20,25, 35ns max. • Low Power Dissipation Standby (TTL) : 40mA (max.) (CMOS) :2mA (max) Operating : KM641001-20 : 150mA (max.) KM641001-25: 130mA (max.)


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    PDF KM641001 KM641001-20 150mA KM641001-25: 130mA KM641001-35: 110mA KM641001P 28-DIP-400 KM641001J

    Untitled

    Abstract: No abstract text available
    Text: KM641001 CMOS SRAM 256KX4 Bit High-Speed CMOS Static RAM FEATURES GENERAL DESCRIPTION • Fast A c c e s s T im e 17,20, 2 5 ,30ns Max. • Low Pow er D issipation T h e K M 6 4 1 0 0 1 is a 1 , 0 4 8 , 5 7 6 - b it h ig h -s p e e d s ta tic ra n d o m a c c e s s m e m o ry o rg a n iz e d as 2 6 2 , 1 4 4 w o rd s


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    PDF KM641001 256KX4 KM641001P/J-17 KM641001P/J-20 KM641001P/J-25 KM641001P/J-30 KM641001P: 28-pin 400mil) KM641001J:

    KM641001

    Abstract: No abstract text available
    Text: KM641001 CMOS SRAM 256K x 4 Bit With UE High-Speed CMOS Static RAM FEATURES GENERAL DESCRIPTION • Fast Access Time 20,25,35 ns(Max.) The KM641001 is a 1,048,576-bit • Low Power Dissipation Random Access M em ory organized as 262,144 words Standby (TTL)


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    PDF KM641001 KM641001P: 28-DIP-400 KM641001J: 28-SOJ-4QOB KM641001 576-bit

    KM641001-20

    Abstract: KM641001-25 km641001 TAE 1102 KM641001-35 KM641001P d02144
    Text: CMOS SRAM KM641001 256K x 4 Bit With UB High-Speed CMOS Static RAM GENERAL DESCRIPTION FEATURES The KM641001 is a 1,048,576-bit high-speed Static Random Access Memory organized as 262,144 words • Fast Access Time 20,25,35 ns(Max.) • Low Power Dissipation


    OCR Scan
    PDF KM641001 256Kx KM641001-20 KM641001-25 KM641001-35 KM641001P: 28-DIP-400 KM641001 28-SOJ-400B KM641001-20 KM641001-25 TAE 1102 KM641001-35 KM641001P d02144