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Samsung Semiconductor KM641001J-20
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Bristol Electronics	KM641001J-20		103			1 - 10 - 100 - 1000 - 10000 -	Get Quote
Quest Components	KM641001J-20		82			1 $9.177 10 $9.177 100 $5.6592 1000 $5.6592 10000 $5.6592	Buy Now
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KM641001J Datasheets Context Search

Catalog Datasheet	MFG & Type	Document Tags	PDF
km681001j-20 Abstract: TC55B328J-12 256Kx4 TC55B465J10 TC55B8128J20 PDM41028SA-15SO TC55B8128J-12 TC55328J-20 KM681001J-25 PDM41024S20 Text: Cross Reference Guide Cross Reference Guide ALLIANCE VS PARADIGM AS7C1024-10TJ AS7C1024-12TJ AS7C1024-15TJ AS7C1024-20TJ AS7C1024L-10TJ AS7C1024L-12TJ AS7C1024L-15TJ AS7C1024L-20TJ AS7C1028-10TJ AS7C1028-12TJ AS7C1028-15TJ AS7C1028-20TJ AS7C1028L-10TJ AS7C1028L-12TJ	Original	AS7C1024-10TJ AS7C1024-12TJ AS7C1024-15TJ AS7C1024-20TJ AS7C1024L-10TJ AS7C1024L-12TJ AS7C1024L-15TJ AS7C1024L-20TJ AS7C1028-10TJ AS7C1028-12TJ km681001j-20 TC55B328J-12 256Kx4 TC55B465J10 TC55B8128J20 PDM41028SA-15SO TC55B8128J-12 TC55328J-20 KM681001J-25 PDM41024S20	PDF
KM641001 Abstract: No abstract text available Text: KM641001 CMOS SRAM 256Kx 4 Bit With UE High-Speed CMOS Static RAM FEATURES GENERAL DESCRIPTION • Fast Access Time 20,25,35 ns(Max.) • Low Power Dissipation Standby (TTL) : 40 mA(Max.) The KM641001 is a 1,048,576-bit high-speed Static Random Access Memory organized as 262,144 words	OCR Scan	KM641001 256Kx KM641001 576-bit KM641001-20 KM641001-25: 130mA	PDF
KM641001 Abstract: No abstract text available Text: CMOS SRAM KM641001 262,144 WORD x 4 Bit High-Speed CMOS Static RAM FEATURES GENERAL DESCRIPTION • Fast Access Time : 2 0 ,2 5 ,35ns max. • Low Power Dissipation Standby (TTL) : 40mA (max.) (CMOS) : 2mA (max) Operating : KM641001 -20 :1 50mA (max.) KM641001 -25 : 130mA (max.)	OCR Scan	KM641001 KM641001 130mA KM641001-35: 110mA KM641001P 28-DIP-400 KM641001J 28-SQJ-400	PDF
KM641001 Abstract: KM641001-25 km641001j KM641001-35 741-145 Text: CM O S SRAM KM 641001 262,144 WORD x 4 Bit High-Speed CMOS Static RAM FEATURES GENERAL DESCRIPTION • Fast A c c e s s T im e : 2 0 ,2 5 ,35ns max. • L o w P o w e r D issipation S tand by (TTL) : 40m A (max.) (CMOS) : 2m A (max) O pe rating : KM641001 -20 : 150m A (max.)	OCR Scan	KM641001 KM641001 150mA KM641001-25 130mA KM641001-35 110mA KM641001P 28-DIP-400 KM641001J km641001j 741-145	PDF
Untitled Abstract: No abstract text available Text: CMOS SRAM KM641001 256K x 4 Bit With UB High-Speed CMOS Static RAM FEATURES GENERAL DESCRIPTION • Fast Access Time 20,25,35 ns(Max.) The KM641001 is a 1,048,576-bit • Low Power Dissipation Random Access Memory organized as 262,144 words Standby (TTL)	OCR Scan	KM641001 KM641001 576-bit	PDF
Untitled Abstract: No abstract text available Text: SAM S UN G E L E C T R O N I C S INC b?E D m 7 T b 4 m 2 D017bMfl 7^5 KM641001 CMOS SRAM 2 5 6 K X 4 Bit High-Speed CMOS Static RAM FEATURES GENERAL DESCRIPTION • Fast Access Time 1 7 ,2 0 ,2 5 ,30ns Max. • Low Power Dissipation Standby (TTL) : 40mA (max.)	OCR Scan	D017bMfl KM641001 KM641001P/J-17 KM641001P/J-20 150mA KM641001P/J-25 130mA KM641001P/J-30 110mA KM641001P:	PDF
Untitled Abstract: No abstract text available Text: CMOS SRAM KM641001 262,144 WORD x 4 Bit High-Speed CMOS Static RAM FEATURES GENERAL DESCRIPTION • Fast Access Time : 20,25, 35ns max. • Low Power Dissipation Standby (TTL) : 40mA (max.) (CMOS) :2mA (max) Operating : KM641001-20 : 150mA (max.) KM641001-25: 130mA (max.)	OCR Scan	KM641001 KM641001-20 150mA KM641001-25: 130mA KM641001-35: 110mA KM641001P 28-DIP-400 KM641001J	PDF
Untitled Abstract: No abstract text available Text: KM641001 CMOS SRAM 256KX4 Bit High-Speed CMOS Static RAM FEATURES GENERAL DESCRIPTION • Fast A c c e s s T im e 17,20, 2 5 ,30ns Max. • Low Pow er D issipation T h e K M 6 4 1 0 0 1 is a 1 , 0 4 8 , 5 7 6 - b it h ig h -s p e e d s ta tic ra n d o m a c c e s s m e m o ry o rg a n iz e d as 2 6 2 , 1 4 4 w o rd s	OCR Scan	KM641001 256KX4 KM641001P/J-17 KM641001P/J-20 KM641001P/J-25 KM641001P/J-30 KM641001P: 28-pin 400mil) KM641001J:	PDF
KM641001 Abstract: No abstract text available Text: KM641001 CMOS SRAM 256K x 4 Bit With UE High-Speed CMOS Static RAM FEATURES GENERAL DESCRIPTION • Fast Access Time 20,25,35 ns(Max.) The KM641001 is a 1,048,576-bit • Low Power Dissipation Random Access M em ory organized as 262,144 words Standby (TTL)	OCR Scan	KM641001 KM641001P: 28-DIP-400 KM641001J: 28-SOJ-4QOB KM641001 576-bit	PDF
KM641001-20 Abstract: KM641001-25 km641001 TAE 1102 KM641001-35 KM641001P d02144 Text: CMOS SRAM KM641001 256K x 4 Bit With UB High-Speed CMOS Static RAM GENERAL DESCRIPTION FEATURES The KM641001 is a 1,048,576-bit high-speed Static Random Access Memory organized as 262,144 words • Fast Access Time 20,25,35 ns(Max.) • Low Power Dissipation	OCR Scan	KM641001 256Kx KM641001-20 KM641001-25 KM641001-35 KM641001P: 28-DIP-400 KM641001 28-SOJ-400B KM641001-20 KM641001-25 TAE 1102 KM641001-35 KM641001P d02144	PDF
Untitled Abstract: No abstract text available Text: KM641001 CMOS SRAM 2 5 6 K X 4 Bit High-Speed CMOS Static RAM FEATURES GENERAL DESCRIPTION • Fast Access Time 20,25,35ns max. • Low Power Dissipation Standby (TTL) : 40mA (max.) (CMOS) : 2mA (max.) Operating KM641001P/J-20: 150mA (max) KM641001P/J-25: 130mA (max)	OCR Scan	KM641001 KM641001P/J-20: 150mA KM641001P/J-25: 130mA KM641001P/J-35: 110mA KM641001P: 28-pin 400mil)	PDF
KM641001 Abstract: No abstract text available Text: KM641001 CMOS SRAM 2 5 6 K X 4 Bit High-Speed CMOS Static RAM FEATURES G E N E R A L D E S C R IP T IO N • Fast Access Tim e 20,25,35ns max. • Low Power Dissipation Standby (TTL) : 40mA (max.) (CMOS) : 2mA (max.) Operating KM641001P/J-20: 150mA (max)	OCR Scan	KM641001 KM641001P/J-20: 150mA 1P/J-25: 130mA 1P/J-35: 641001P: 28-pin KM641001J: KM641001	PDF