Please enter a valid full or partial manufacturer part number with a minimum of 3 letters or numbers

    KM48S8030B Search Results

    SF Impression Pixel

    KM48S8030B Price and Stock

    Samsung Semiconductor KM48S8030BT-GH

    SDRAM, 8M x 8, 54 Pin, Plastic, TSOP
    Distributors Part Package Stock Lead Time Min Order Qty Price Buy
    Quest Components KM48S8030BT-GH 40
    • 1 -
    • 10 -
    • 100 -
    • 1000 -
    • 10000 -
    		Buy Now

    KM48S8030B Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    KM48S8030BT

    Abstract: No abstract text available
    Text: KM48S8030B CMOS SDRAM Revision History Revision .3 November 1997 - tRDL has changed 10ns to 12ns. - Binning -10 does not meet PC100 characteristics . So AC parameter/Characteristics have changed to 64M 2nd values. Revision .4 (February 1998) - Input leakage Currents (Inputs / DQ) are changed.


    Original     		PDF KM48S8030B PC100 KM48S8030BT

    KM48S8030BT

    Abstract: No abstract text available
    Text: KM48S8030B CMOS SDRAM Revision History Revision .3 November 1997 - tRDL has changed 10ns to 12ns. - Binning -10 does not meet PC100 characteristics . So AC parameter/Characteristics have changed to 64M 2nd values. Revision .4 (February 1998) - Input leakage Currents (Inputs / DQ) are changed.


    Original     		PDF KM48S8030B PC100 A10/AP KM48S8030BT

    Untitled

    Abstract: No abstract text available
    Text: KMM374S1623BT PC100 SDRAM MODULE Revision History Revision .0 February 1998 - Input leakage Currents (Inputs / DQ) of Component level are changed. I IL(Inputs) : ± 5uA to ± 1uA, I IL(DQ) : ± 5uA to ± 1.5uA. - Cin to be measured at V DD = 3.3V, T A = 23°C, f = 1MHz, V REF =1.4V ± 200 mV.


    Original     		PDF KMM374S1623BT PC100 118DIA 000DIA 150Max 81Max) 010Max KM48S8030BT

    Untitled

    Abstract: No abstract text available
    Text: SDRAM MODULE Preliminary KMM377S823BT1 Revision History Revision 3 May 1998 - CLK Input Cap. is added by PLL Input Cap. (24pF) Revision 4 (July 1998) - "REGE" description is changed. Revision 5 (Aug. 1998) - Package Dimension changed. REV. 5 Aug. 1998 Preliminary


    Original     		PDF KMM377S823BT1 KMM377S823BT1 8Mx72 400mil 18-bits 100MHz 100MHz

    KM48S8030

    Abstract: KMM350S823BT1-GL
    Text: SDRAM MODULE Preliminary KMM350S823BT1 Revision History Revision 3 July 1998 - "REGE" description is changed. Revision 4 ( Aug. 1998) - Package Dimension changed REV. 4 Aug. 1998 Preliminary KMM350S823BT1 SDRAM MODULE KMM350S823BT1 SDRAM DIMM (Intel 1.0 ver. Base)


    Original     		PDF KMM350S823BT1 KMM350S823BT1 8Mx72 400mil 18-bits 168p1h 100MHz KM48S8030 KMM350S823BT1-GL

    KM48S8030BT-G10

    Abstract: KM48S8030BT KM48S8030BT-G
    Text: KMM374S823BTL PC66 SDRAM MODULE Revision History Revision .3 Mar. 1998 •Some Parameter values & Characteristics of comp. level are changed as below : - Input leakage currents (Inputs) : ±5uA to ±1uA. - Input leakage currents (I/O) : ±5uA to ±1.5uA.


    Original     		PDF KMM374S823BTL 200mV. 66MHz KM48S8030BT-G10 KM48S8030BT KM48S8030BT-G

    KMM375S1723T-G0

    Abstract: KMM375S1723T-G8 KMM375S1723T-GH KMM375S1723T-GL
    Text: Preliminary KMM375S1723T SDRAM MODULE KMM375S1723T SDRAM DIMM 16Mx72 SDRAM DIMM with PLL & Register based on 16Mx8, 4Banks 4K Ref., 3.3V Synchronous DRAMs with SPD GENERAL DESCRIPTION FEATURE The Samsung KMM375S1723T is a 16M bit x 72 Synchronous Dynamic RAM high density memory module. The Samsung KMM375S1723T consists of nine CMOS 16Mx8 bit


    Original     		PDF KMM375S1723T KMM375S1723T 16Mx72 16Mx8, 16Mx8 400mil 18-bits 24-pin KMM375S1723T-G0 KMM375S1723T-G8 KMM375S1723T-GH KMM375S1723T-GL

    KMM377S823CT1-G8

    Abstract: KMM377S823CT1-GH KMM377S823CT1-GL
    Text: Preliminary KMM377S823CT1 SDRAM MODULE KMM377S823CT1 SDRAM DIMM Intel 1.0 ver. Base 8Mx72 SDRAM DIMM with PLL & Register based on 8Mx8, 4Banks 4K Ref., 3.3V Synchronous DRAMs with SPD GENERAL DESCRIPTION FEATURE The Samsung KMM377S823CT1 is a 8M bit x 72 Synchronous


    Original     		PDF KMM377S823CT1 KMM377S823CT1 8Mx72 400mil 18-bits 168pin 0022uF KMM377S823CT1-G8 KMM377S823CT1-GH KMM377S823CT1-GL

    KMM375S823CT-G0

    Abstract: KMM375S823CT-G8 KMM375S823CT-GH KMM375S823CT-GL
    Text: Preliminary KMM375S823CT SDRAM MODULE KMM375S823CT SDRAM DIMM 8Mx72 SDRAM DIMM with PLL & Register based on 8Mx8, 4Banks 4K Ref., 3.3V Synchronous DRAMs with SPD GENERAL DESCRIPTION FEATURE The Samsung KMM375S823CT is a 8M bit x 72 Synchronous Dynamic RAM high density memory module. The Samsung


    Original     		PDF KMM375S823CT KMM375S823CT 8Mx72 400mil 18-bits 24-pin 168-pin KMM375S823CT-G0 KMM375S823CT-G8 KMM375S823CT-GH KMM375S823CT-GL

    Untitled

    Abstract: No abstract text available
    Text: Preliminary PC66 SDRAM MODULE KMM374S1623CTL KMM374S1623CTL SDRAM DIMM 16Mx72 SDRAM DIMM with ECC based on 8Mx8, 4Banks, 4K Refresh, 3.3V Synchronous DRAMs with SPD GENERAL DESCRIPTION FEATURE The Samsung KMM374S1623CTL is a 16M bit x 72 Synchronous Dynamic RAM high density memory module. The Samsung


    Original     		PDF KMM374S1623CTL KMM374S1623CTL 16Mx72 400mil 168-pin KM48S8030BT

    KM48S8030BT-GL

    Abstract: nn5264805tt-b60 KM48S2020CT-GL 0364804CT3B-260 d4564163g5 nt56v1680a0t D4564841g5 81F641642B-103FN M5M4V16S30DTP Siemens 9832
    Text: PC100 SDRAM Component Testing Summary As part of Intel’s enabling process, the following test/characterization procedure has been implemented on PC100 SDRAM components. A small sample of components 2-5 devices have been tested under the conditions described in Table 2.


    Original     		PDF PC100 KM48S8030BT-GL nn5264805tt-b60 KM48S2020CT-GL 0364804CT3B-260 d4564163g5 nt56v1680a0t D4564841g5 81F641642B-103FN M5M4V16S30DTP Siemens 9832

    KMM374S823BT-GL

    Abstract: KMM374S823BT-G8 KMM374S823BT-GH KM48S8030BT-G MV 42H
    Text: KMM374S823BT PC100 SDRAM MODULE Revision History Revision .0 February 1998 - Input leakage Currents (Inputs / DQ) of Component level are changed. IIL(Inputs) : ± 5uA to ± 1uA, IIL(DQ) : ± 5uA to ± 1.5uA. - Cin to be measured at VDD = 3.3V, TA = 23°C, f = 1MHz, VREF =1.4V ± 200 mV.


    Original     		PDF KMM374S823BT PC100 100MHz 100MHz KMM374S823BT-GL KMM374S823BT-G8 KMM374S823BT-GH KM48S8030BT-G MV 42H

    KM48S8030BT

    Abstract: No abstract text available
    Text: KM48S8030B CMOS SDRAM 2M x 8Bit x 4 Banks Synchronous DRAM FEATURES GENERAL DESCRIPTION • • • • The KM48S8030B is 67,108,864 bits synchronous high data rate Dynamic RAM organized as 4 x 2,097,152 words by 8 bits, fabricated with SAMSUNG'S high performance CMOS technol­


    OCR Scan     		PDF KM48S8030B KM48S8030B KM48S8030BT

    Untitled

    Abstract: No abstract text available
    Text: KM48S8030B CMOS SDRAM Revision History Revision .3 N ovem ber 1997 - tRDL has changed 10ns to 12ns. - Binning -10 does not m eet PC100 characteristics . So AC param eter/C haracteristics have changed to 64M 2nd values. Revision .4 (February 1998) - Input leakage C urrents (Inputs / DQ) are changed.


    OCR Scan     		PDF KM48S8030B PC100 10/AP

    Untitled

    Abstract: No abstract text available
    Text: PC66 SDRAM MODULE KMM374S1623BTL Revision History Revision .3 March 1998 Som e Param eter value s & C haracteristics of com p, level are changed as below : - Input leakage currents (Inputs) : ± 5 u A to ±1uA. - Input leakage currents (I/O) : ± 5 u A to ± 1 ,5uA.


    OCR Scan     		PDF KMM374S1623BTL KM48S8030BT

    Untitled

    Abstract: No abstract text available
    Text: KMM374S1 623BT PC100 SDR AM M O D U L E Re vis ion Hist ory Revision .0 February 1998 -Input leakage Currents (Inputs / DQ) of Component level are changed. llL(lnputs) : ± 5uA to ± 1uA, llL(DQ) : ± 5uA to ± 1.5uA. -C in to be measured at V DD = 3.3V, T a = 23°C, f = 1MHz, V


    OCR Scan     		PDF KMM374S1 623BT PC100 KMM374S1 150Max KM48S8030BT

    Untitled

    Abstract: No abstract text available
    Text: KMM366S823BTL PC66 SDRAM MODULE KMM366S823BTL SDRAM DIMM 8Mx64 SDRAM DIMM based on 8Mx8,4Banks, 4K Refresh, 3.3V Synchronous DRAMs with SPD GENERAL DESCRIPTION FEATURE The Samsung KMM366S823BTL is a 8M bit x 64 Synchronous Dynamic RAM high density memory module. The Samsung


    OCR Scan     		PDF KMM366S823BTL KMM366S823BTL 8Mx64 400mil 168-pin KMM366S8238TL 000DIA±

    Untitled

    Abstract: No abstract text available
    Text: 144pin SDRAM SODIMM KMM466S823BT3 KMM466S823BT3 SDRAM SODIMM 8Mx64 SDRAM SODIMM based on 8Mx8, 4Banks, 4K Refresh, 3.3V Synchronous DRAMs with SPD GENERAL DESCRIPTION FEATURE The Samsung KMM466S823BT3 is a 8M bit x 64 Synchronous • Performance range Dynamic RAM high density memory module. The Samsung


    OCR Scan     		PDF 144pin KMM466S823BT3 KMM466S823BT3 8Mx64 400mil 144-pin M466S823BT3- 100MHz

    KMM374S1623BTL

    Abstract: KMM374S1623BTL-G0
    Text: KMM374S1623BTL PC66 SDRAM MODULE KMM374S1623BTL SDRAM DIMM 16Mx72 SDRAM DIMM with ECC based on 8Mx8, 4Banks, 4K Refresh, 3.3V Synchronous DRAMs with SPD GENERAL DESCRIPTION FEATURE The Samsung KMM374S1623BTL is a 16M bit x 72 Synchro­ nous Dynamic RAM high density memory module. The Samsung


    OCR Scan     		PDF KMM374S1623BTL KMM374S1623BTL 16Mx72 400mil 168-pin KMM374S1B23BTL KMM374S1623BTL-G0

    Untitled

    Abstract: No abstract text available
    Text: PC100 SDRAM MODULE KMM366S1623BT Revision History Revision .0 February 1998 - Input leakage Currents (Inputs / DQ) of Com ponent level are changed. In(lnputs) : ± 5uA to ± 1 u A , - Cin to be measured at V dd I il (DQ) : ± 5uA to ± 1.5uA. = 3.3V, T a = 23°C, f = 1 MHz, V


    OCR Scan     		PDF KMM366S1623BT PC100 KM48S8030BT

    Untitled

    Abstract: No abstract text available
    Text: SDRAM MODULE Preliminary KMM377S823BT1 Revision History Revision 3 May 1998 - CLK input Cap. is added by PLL Input Cap. (24pF) Revision 4 (July 1998) - "REGE" description is changed. REV. 4 July 1998 ELECTRG&HCS Preliminary KMM377S823BT1 SDRAM MODULE KMM377S823BT1 SDRAM DIMM (Intel 1.0 ver. Base)


    OCR Scan     		PDF KMM377S823BT1 KMM377S823BT1 400mil 18-bits KM48S8030BT

    Untitled

    Abstract: No abstract text available
    Text: KMM366S1623BT PC100 SDR AM M O D U L E Re vis ion Hist ory Revision .0 February 1998 -Input leakage Currents (Inputs / DQ) of Component level are changed. llL(lnputs) : ± 5uA to ± 1uA, llL(DQ) : ± 5uA to ± 1.5uA. -C in to be measured at V DD = 3.3V, T a = 23°C, f = 1MHz, V


    OCR Scan     		PDF KMM366S1623BT PC100 KMM366S162top 150Max KM48S8030BT

    KMM366S1623BT-GL

    Abstract: No abstract text available
    Text: KMM366S1623BT PC100 SDRAM MODULE KMM366S1623BT SDRAM DIMM 16Mx64 SDRAM DIMM based on 8Mx8, 4Banks, 4K Refresh, 3.3V Synchronous DRAMs with SPD GENERAL DESCRIPTION FEATURE The Samsung KMM366S1623BT is a 16M bit x 64 Synchronous Dynamic RAM high density memory module. The Samsung


    OCR Scan     		PDF KMM366S1623BT KMM366S1623BT PC100 16Mx64 400mil 168-pin KMM366S1623BT-GL

    Untitled

    Abstract: No abstract text available
    Text: KM M 4 6 6 S 8 2 3 B T 2 144pm S D R A M S O D IM M Revision History R evision .2 M arch 1998 • Some Parameter values & Chracteristics of comp, level are changed as below : -In p u t leakage Currents (Inputs) : ± 5uA to ± 1uA. Input leakage Currents (I/O) : ± 5uA to ± 1.5uA.


    OCR Scan     		PDF 144pm 44pin KM48S8030BT