KM48S8030BT-G10
Abstract: KM48S8030BT KM48S8030BT-G
Text: KMM374S823BTL PC66 SDRAM MODULE Revision History Revision .3 Mar. 1998 •Some Parameter values & Characteristics of comp. level are changed as below : - Input leakage currents (Inputs) : ±5uA to ±1uA. - Input leakage currents (I/O) : ±5uA to ±1.5uA.
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KMM374S823BTL
200mV.
66MHz
KM48S8030BT-G10
KM48S8030BT
KM48S8030BT-G
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KMM374S823BT-GL
Abstract: KMM374S823BT-G8 KMM374S823BT-GH KM48S8030BT-G MV 42H
Text: KMM374S823BT PC100 SDRAM MODULE Revision History Revision .0 February 1998 - Input leakage Currents (Inputs / DQ) of Component level are changed. IIL(Inputs) : ± 5uA to ± 1uA, IIL(DQ) : ± 5uA to ± 1.5uA. - Cin to be measured at VDD = 3.3V, TA = 23°C, f = 1MHz, VREF =1.4V ± 200 mV.
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KMM374S823BT
PC100
100MHz
100MHz
KMM374S823BT-GL
KMM374S823BT-G8
KMM374S823BT-GH
KM48S8030BT-G
MV 42H
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Untitled
Abstract: No abstract text available
Text: Preliminary PC100 SDRAM MODULE KMM374S823BT KMM374S823BT SDRAM DIMM 8Mx72 SDRAM DIMM with ECC based on 8Mx8, 4Banks, 4K Refresh, 3.3V Synchronous DRAMs with SPD GENERAL DESCRIPTION FEATURE The Sam sung KM M 374S 823B T is a 8M bit x 72 Synchronous : Perform ance range
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KMM374S823BT
KMM374S823BT
PC100
8Mx72
400mil
168-pin
48S8030BT
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Untitled
Abstract: No abstract text available
Text: Preliminary KMM374S823BT PC100 SDRAM MODULE KMM374S823BT SDRAM DIMM 8Mx72 SDRAM DIMM with ECC based on 8Mx8, 4Banks, 4K Refresh, 3.3V Synchronous DRAMs with SPD GENERAL DESCRIPTION FEATURE The Samsung KMM374S823BT is a 8M bit x 72 Synchronous Performance range
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KMM374S823BT
PC100
KMM374S823BT
8Mx72
KMM374S823BT-G8
125MHz
400mil
KMM374S823BT-GH
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Untitled
Abstract: No abstract text available
Text: Preliminary Intel 1.0 SDRAM MODULE KMM374S823BTL_ Revision History Revision .l N ovem ber 1997 This spec has changed in accordance with New Binning [s F ' ELECTRO ftSSCS - 1 - REV. 1 Nov. '97 Preliminary Intel 1.0 SDRAM MODULE KMM374S823BTL
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KMM374S823BTL_
KMM374S823BTL
KMM374S823BTL
8Mx72
374S823BTL
400mil
168-pin
150Max
48S8030BT
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KA3143
Abstract: KMM374S823BT-GL 0q38
Text: KMM374S823BT PC100 SDRAM MODULE KMM374S823BT SDRAM DIMM 8Mx72 SDRAM DIMM with ECC based on 8Mx8, 4Banks, 4K Refresh, 3.3V Synchronous DRAMs with SPD GENERAL. DESCRIPTION FEATURE The Samsung KMM374S823BT is a 8M bit x 72 Synchronous Dynamic RAM high density memory module. The Samsung
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KMM374S823BT
KMM374S823BT
PC100
8Mx72
400mil
168-pin
KA3143
KMM374S823BT-GL
0q38
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Untitled
Abstract: No abstract text available
Text: KMM374S823BTL PC66 SDRAM MODULE KMM374S823BTL SDRAM DIMM 8Mx72 SDRAM DIMM with ECC based on 8Mx8, 4Banks, 4K Refresh, 3.3V Synchronous DRAMs with SPD GENERAL DESCRIPTION FEATURE The Samsung KMM374S823BTL is a 8M bit x 72 Synchronous • Performance range Dynamic RAM high density memory module. The Samsung
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KMM374S823BTL
KMM374S823BTL
8Mx72
400mil
168-pin
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KMM366S424BTL-G0
Abstract: KMM466S824BT2F0 KMM466S424BT-F0 KMM466S824BT2-F0 4MX16 16MX8 KM44S4020CT KM48S2020CT
Text: TABLE OF CONTENTS | I. General Information A. Product Guide Component B. Product Guide (Module) C. Ordering information II. Component Specifications A. 16M SDRAM (C-die) - Datasheets • KM44S4020CT • 4Mx4 with 2Banks 25 • KM48S2020CT .
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KM44S4020CT
KM48S2020CT
KM416S1020CT
KM416S1021CT
1Mx16
KM44S16020BT
KM48S8020BT
KM416S4020BT
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4Mx64
KMM366S424BTL-G0
KMM466S824BT2F0
KMM466S424BT-F0
KMM466S824BT2-F0
4MX16
16MX8
KM44S4020CT
KM48S2020CT
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