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    KM48S16030 Datasheets (19)

    Part ECAD Model Manufacturer Description Curated Type PDF
    KM48S16030 Samsung Electronics 4M x 8-Bit x 4 Banks Synchronous DRAM Original PDF
    KM48S16030A Samsung Electronics 128Mbit SDRAM 4M x 8-Bit x 4 Banks Synchronous DRAM LVTTL Original PDF
    KM48S16030AT-G/F10 Samsung Electronics 4M x 8-Bit x 4 banks synchronous DRAM. Max freq. 66 MHz(CL=2&3). Interface LVTTL Original PDF
    KM48S16030AT-G/F8 Samsung Electronics 4M x 8-Bit x 4 Banks Synchronous DRAM Original PDF
    KM48S16030AT-G/FA Samsung Electronics 4M x 8-Bit x 4 Banks Synchronous DRAM Original PDF
    KM48S16030AT-G/FH Samsung Electronics 4M x 8-Bit x 4 Banks Synchronous DRAM Original PDF
    KM48S16030AT-G/FL Samsung Electronics 4M x 8-Bit x 4 Banks Synchronous DRAM Original PDF
    KM48S16030B Samsung Electronics 128Mbit SDRAM 4M x 8-Bit x 4 Banks Synchronous DRAM LVTTL Original PDF
    KM48S16030BT-G/F10 Samsung Electronics 4M x 8-Bit x 4 banks synchronous DRAM LVTTL. Max freq. 66 MHz(CL=2&3). Original PDF
    KM48S16030BT-GF10 Samsung Electronics 4M x 8-Bit x 4 Banks Synchronous DRAM Original PDF
    KM48S16030BT-G/F8 Samsung Electronics 4M x 8-Bit x 4 Banks Synchronous DRAM Original PDF
    KM48S16030BT-G/FA Samsung Electronics 4M x 8-Bit x 4 Banks Synchronous DRAM Original PDF
    KM48S16030BT-G/FH Samsung Electronics 4M x 8-Bit x 4 Banks Synchronous DRAM Original PDF
    KM48S16030BT-G/FL Samsung Electronics 4M x 8-Bit x 4 Banks Synchronous DRAM Original PDF
    KM48S16030BT-GL Samsung Electronics KM48S16030BT 4MB x 8-Bit x 4Banks Synchronous DRAM Organization = 16Mx8 Bank/ Interface = 4B/LVTTL Refresh = 4K/64ms Speed = 75,80,1H,1L,10 Package = 54TSOP2 Power = C,l Production Status = Eol Comments = - Original PDF
    KM48S16030T-G/F10 Samsung Electronics 4M x 8-Bit x 4 banks synchronous DRAM LVTTL. Max freq. 100 MHz. Original PDF
    KM48S16030T-G/F8 Samsung Electronics 4M x 8-Bit x 4 banks synchronous DRAM LVTTL. Max freq. 125 MHz. Original PDF
    KM48S16030T-G/FH Samsung Electronics 4M x 8-Bit x 4 banks synchronous DRAM LVTTL. Max freq. 100 MHz. Original PDF
    KM48S16030T-G/FL Samsung Electronics 4M x 8-Bit x 4 banks synchronous DRAM LVTTL. Max freq. 100 MHz. Original PDF

    KM48S16030 Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    Untitled

    Abstract: No abstract text available
    Text: shrink-TSOP KM48S16030BN Preliminary CMOS SDRAM 128Mb SDRAM Shrink TSOP 4M x 8Bit x 4 Banks Synchronous DRAM LVTTL Revision 0.0 July 1999 Samsung Electronics reserves the right to change products or specification without notice. Rev. 0.0 July 1999 shrink-TSOP


    Original     		PDF KM48S16030BN 128Mb A10/AP

    54PIN

    Abstract: KM48S16030
    Text: Preliminary CMOS SDRAM KM48S16030 4M x 8Bit x 4 Banks Synchronous DRAM FEATURES GENERAL DESCRIPTION • JEDEC standard 3.3V power supply The KM48S16030 is 134,217,728 bits synchronous high data rate Dynamic RAM organized as 4 x 4,194,304 words by 8 bits, fabricated with SAMSUNG′s high performance CMOS technology. Synchronous design allows precise cycle control with the


    Original     		PDF KM48S16030 KM48S16030 A10/AP 54PIN

    KM48S16030A

    Abstract: No abstract text available
    Text: KM48S16030A CMOS SDRAM 128Mbit SDRAM 4M x 8Bit x 4 Banks Synchronous DRAM LVTTL Revision 0.1 June 1999 * Samsung Electronics reserves the right to change products or specification without notice. Rev. 0.1 Jun. 1999 KM48S16030A CMOS SDRAM Revision History Revision 0.0 May 15, 1999


    Original     		PDF KM48S16030A 128Mbit A10/AP KM48S16030A

    KMM390S3320BT1-GA

    Abstract: 16MX8 32MX72 KMM390S1723BT1-GA samsung memory
    Text: SERIAL PRESENCE DETECT PC133 Registered DIMM PC133 Registered SDRAM DIMM 168pin Type SPD Specification REV. 0 Aug. 1999 REV. 0 Aug. 1999 SERIAL PRESENCE DETECT PC133 Registered DIMM KMM390S1723BT1-GA •Organization : 16MX72 •Composition : 16MX8 * 9ea •Used component part # : KM48S16030BT-GA


    Original     		PDF PC133 168pin) KMM390S1723BT1-GA 16MX72 16MX8 KM48S16030BT-GA 4K/64ms 128bytes KMM390S3320BT1-GA 16MX8 32MX72 KMM390S1723BT1-GA samsung memory

    KM48S16030B

    Abstract: No abstract text available
    Text: KM48S16030B CMOS SDRAM 128Mbit SDRAM 4M x 8Bit x 4 Banks Synchronous DRAM LVTTL Revision 0.1 June 1999 * Samsung Electronics reserves the right to change products or specification without notice. Rev. 0.1 Jun. 1999 KM48S16030B CMOS SDRAM Revision History Revision 0.0 May 15, 1999


    Original     		PDF KM48S16030B 128Mbit A10/AP KM48S16030B

    Untitled

    Abstract: No abstract text available
    Text: KM48S16030A CMOS SDRAM 128Mbit SDRAM 4M x 8Bit x 4 Banks Synchronous DRAM LVTTL Revision 0.0 May 1999 * Samsung Electronics reserves the right to change products or specification without notice. Rev. 0.0 May. 1999 KM48S16030A CMOS SDRAM Revision History Revision 0.0 May 15, 1999


    Original     		PDF KM48S16030A 128Mbit A10/AP

    CDC2509

    Abstract: No abstract text available
    Text: KMM377S1723T3 PC100 Registered DIMM Revision History Revision 0.1 Mar. 23, 1999 - Corrected misprinted Part No.From KMM377S1723T3 to KMM377S1723T3 and From KM48S16030CT KM48S16030T @Simplified Truth Table Read and Write Column Address was revised from A0~A8 to A0~A9.


    Original     		PDF KMM377S1723T3 PC100 KMM377S1723T3 KM48S16030CT toKM48S16030T 16Mx72 CDC2509

    KM48S16030

    Abstract: No abstract text available
    Text: Preliminary CMOS SDRAM KM48S16030 4M x 8Bit x 4 Banks Synchronous DRAM FEATURES GENERAL DESCRIPTION • JEDEC standard 3.3V power supply The KM48S16030 is 134,217,728 bits synchronous high data rate Dynamic RAM organized as 4 x 4,194,304 words by 8 bits, fabricated with SAMSUNG′s high performance CMOS technology. Synchronous design allows precise cycle control with the


    Original     		PDF KM48S16030 KM48S16030 A10/AP

    KMM377S1723T3-GH

    Abstract: KMM377S1723T3-GL CDC2509
    Text: SDRAM MODULE KMM377S1723T3 Revision History [Rev. 1] March 23, 1999 Corrected misprinted Part No. From KMM377S1723T3 to KMM377S1723T3 and From KM48S16030CT to KM48S16030T. @Simplified Truth Table Read and Write Column Address was revised from A0~A8 to A0~A9.


    Original     		PDF KMM377S1723T3 KMM377S1723T3 KM48S16030CT KM48S16030T. 16Mx72 16Mx8, KMM377S1723T3-GH KMM377S1723T3-GL CDC2509

    TC5118160

    Abstract: msm-561 TMS444000 msm561 M5M418165 M5M418160 tms44c256 TC5117405 HY514264 HY514260
    Text: New Page 1 DRAM 1Meg 1Mx1 256Kx4 FPM FPM Fujitsu MB81C100 MB81C4256 Goldstar GM71C100 GM71C4256 Hitachi HM511000 HM514256 Hyundai HY531000 HY534256 Micron MT4C1024 MT4C4256 Mitsubishi M5M41000 M5M44256 Nec UPD421000 UPD424256 Oki MSM511000 MSM514256 Samsung alt KM41C1000 KM44C256


    Original     		PDF 256Kx4 MB81C100 MB81C4256 GM71C100 GM71C4256 HM511000 HM514256 HY531000 HY534256 MT4C1024 TC5118160 msm-561 TMS444000 msm561 M5M418165 M5M418160 tms44c256 TC5117405 HY514264 HY514260

    KMM374S3323T-G8

    Abstract: KMM374S3323T-GH KMM374S3323T-GL
    Text: PC100 SDRAM MODULE KMM374S3323T Revision History [ Rev. 1 ] March 23. 1999 Package dimension and Block Diagram changed. Rev.1 Mar. 1999 PC100 SDRAM MODULE KMM374S3323T KMM374S3323T SDRAM DIMM 32Mx72 SDRAM DIMM with ECC based on 16Mx8, 4Banks, 4K Refresh, 3.3V Synchronous DRAMs with SPD


    Original     		PDF PC100 KMM374S3323T KMM374S3323T 32Mx72 16Mx8, 400mil KMM374S3323T-G8 KMM374S3323T-GH KMM374S3323T-GL

    KMM374S1723T-G8

    Abstract: KMM374S1723T-GH KMM374S1723T-GL
    Text: KMM374S1723T PC100 SDRAM MODULE Revision History Revision .0 Aug. 1998 - Eliminated Preliminary REV. 0 Aug. 1998 KMM374S1723T PC100 SDRAM MODULE KMM374S1723T SDRAM DIMM 16Mx72 SDRAM DIMM with ECC based on 16Mx8, 4Banks, 4K Refresh, 3.3V Synchronous DRAMs with SPD


    Original     		PDF KMM374S1723T PC100 KMM374S1723T 16Mx72 16Mx8, 400mil KMM374S1723T-G8 KMM374S1723T-GH KMM374S1723T-GL

    KMM374S3323T-G8

    Abstract: KMM374S3323T-GH KMM374S3323T-GL
    Text: KMM374S3323T PC100 SDRAM MODULE Revision History Revision .0 Aug. 1998 - Eliminated Preliminary REV. 0 Aug. 1998 KMM374S3323T PC100 SDRAM MODULE KMM374S3323T SDRAM DIMM 32Mx72 SDRAM DIMM with ECC based on 16Mx8, 4Banks, 4K Refresh, 3.3V Synchronous DRAMs with SPD


    Original     		PDF KMM374S3323T PC100 KMM374S3323T 32Mx72 16Mx8, 400mil KMM374S3323T-G8 KMM374S3323T-GH KMM374S3323T-GL

    Untitled

    Abstract: No abstract text available
    Text: Preliminary PC66 SDRAM MODULE KMM366S1723TL KMM366S1723TL SDRAM DIMM 16Mx64 SDRAM DIMM based on 16Mx8, 4Banks, 4K Refresh, 3.3V Synchronous DRAMs with SPD GENERAL DESCRIPTION FEATURE The Samsung KMM366S1723TL is a 16M bit x 64 Synchronous Dynamic RAM high density memory module. The Samsung KMM366S1723TL consists of eight CMOS 16M x 8 bit with


    Original     		PDF KMM366S1723TL KMM366S1723TL 16Mx64 16Mx8, 400mil 168-pin

    KMM366S1723BTS-GA

    Abstract: No abstract text available
    Text: KMM366S1723BTS PC133 Unbuffered DIMM Revision History Revision 0.0 Aug., 1999 • PC133 first published. REV. 0 Aug. 1999 KMM366S1723BTS PC133 Unbuffered DIMM KMM366S1723BTS SDRAM DIMM 16Mx64 SDRAM DIMM based on 16Mx8, 4Banks, 4K Refresh, 3.3V Synchronous DRAMs with SPD


    Original     		PDF KMM366S1723BTS PC133 KMM366S1723BTS 16Mx64 16Mx8, KMM366S1723BTS-GA

    Untitled

    Abstract: No abstract text available
    Text: KMM374S1723BTS PC133 Unbuffered DIMM Revision History Revision 0.0 Aug, 1999 • PC133 first published. REV. 0 Aug. 1999 KMM374S1723BTS PC133 Unbuffered DIMM KMM374S1723BTS SDRAM DIMM 16Mx72 SDRAM DIMM with ECC based on 16Mx8, 4Banks, 4K Refresh, 3.3V Synchronous DRAMs with SPD


    Original     		PDF KMM374S1723BTS PC133 KMM374S1723BTS 16Mx72 16Mx8,

    Untitled

    Abstract: No abstract text available
    Text: PC100 Unbuffered DIMM KMM366S3323AT Revision History Revision 0.0 June 7, 1999 • Changed tRDL from 1CLK to 2CLK in OPERATING AC PARAMETER. • Skip ICC4 value of CL=2 in DC characteristics in datasheet. • Define a new parameter of tDAL( 2CLK +20ns), Last data in to Active delay in OPERATING AC PARAMETER.


    Original     		PDF KMM366S3323AT PC100 118DIA 000DIA 16Mx8 KM48S16030AT

    48S160

    Abstract: 48S1603
    Text: Preliminary KM48S16030 CMOS SDRAM 4M x 8Bit x 4 Banks Synchronous DRAM FEATURES GENERAL DESCRIPTION • JEDEC standard 3.3V power supply • LVTTL compatible with multiplexed address The KM48S16030 is 134,217,728 bits synchronous high data rate Dynamic RAM organized as 4 x 4,194,304 words by 8 bits,


    OCR Scan     		PDF KM48S16030 KM48S16030 48S160 48S1603

    Untitled

    Abstract: No abstract text available
    Text: KM48S16030B CMOS SDRAM 128Mbit SDRAM 4M X 8Bit X 4 Banks Synchronous DRAM LVTTL Revision 0.1 June 1999 * Samsung Electronics reserves the right to change products or specification without notice. Rev. 0.1 Jun. 1999 ELECTRONICS KM48S16030B CMOS SDRAM R evision H istory


    OCR Scan     		PDF KM48S16030B 128Mbit 10/AP

    Untitled

    Abstract: No abstract text available
    Text: Preliminary CMOS SDRAM KM48S16030 4M X 8Bit X 4 Banks Synchronous DRAM GENERAL DESCRIPTION FEATURES The KM 48S16030 is 134,217,728 bits synchronous high data • JEDEC standard 3.3V pow er supply • LVTTL com patible with m ultiplexed address rate Dynam ic RAM organized as 4 x 4,194,304 w ords by 8 bits,


    OCR Scan     		PDF KM48S16030 48S16030 10/AP

    Untitled

    Abstract: No abstract text available
    Text: Preliminary KMM466S1723T2_144pin SDRAM SODIMM KMM466S1723T SDRAM SODIMM 16Mx64 SDRAM SODIMM based on 16Mx8, 4Banks, 4K Refresh, 3.3V Synchronous DRAMs with SPD GENERAL DESCRIPTION FEATURE The Samsung KMM466S1723T is a 16M bit x 64 Synchronous


    OCR Scan     		PDF KMM466S1723T2_ 144pin KMM466S1723T 16Mx64 16Mx8, KMM466S1723T-F0 100MHz 400mil

    Untitled

    Abstract: No abstract text available
    Text: Preliminary KMM466S1723T3_ 144pin SDRAM SODIMM Revision History Revision 2 August 1998 1. Correct DQ No. in Fuctionai Block Diagram. C hange DQ8 ~ DQ15 to DQO ~ DQ7. REV. 2 August 1998 ELECTROMCS Preliminary KMM466S1723T3_ 144pin SDRAM SODIMM


    OCR Scan     		PDF KMM466S1723T3_ 144pin KMM466S1723T3 16Mx64 16Mx8, 400mil

    Untitled

    Abstract: No abstract text available
    Text: Preliminary 144pirt SDRAM SODIMM KMM466S1723T2 KMM466S1723T SDRAM SODIMM 16Mx64 SDRAM SODIMM based on 16Mx8, 4Banks, 4K Refresh, 3.3V Synchronous DRAMs with SP GENERAL DESCRIPTION FEATURE The Samsung KMM466S1723T is a 16M bit x 64 Synchronous Dynamic RAM high density memory module. The Samsung


    OCR Scan     		PDF KMM466S1723T2 KMM466S1723T 144pirt 16Mx64 16Mx8, 400mil 144-pin

    Untitled

    Abstract: No abstract text available
    Text: SDRAM MODULE Preliminary KMM377S1723T1 Revision History Revision 3 May 1998 - CLK Input Cap. is added by PLL Input Cap. (24pF) REV. 3 May '98 ELECTRONICS Preliminary KMM377S1723T1 SDRAM MODULE KMM377S1723T1 SDRAM DIMM (Intel 1.0 ver. Base) 16Mx72 SDRAM DIMM with PLL & Register based on 16Mx8, 4Banks 4K Ref., 3.3V Synchronous DRAMs with SPD


    OCR Scan     		PDF KMM377S1723T1 KMM377S1723T1 16Mx72 16Mx8, 16Mx8 400mil 18-bits