Untitled
Abstract: No abstract text available
Text: KM48C8000B, KM48C8100B CMOS DRAM 8M x 8bit CMOS Dynamic RAM with Fast Page Mode DESCRIPTION This is a family of 8,388,608 x 8 bit Fast Page Mode CMOS DRAMs. Fast Page Mode offers high speed random access of memory cells within the same row. Refresh cycle 4K Ref. or 8K Ref. , access time (-45, -5 or -6), package type (SOJ or TSOP-II) are optional features
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KM48C8000B,
KM48C8100B
400mil
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KM48c8100
Abstract: No abstract text available
Text: KM48C8000B, KM48C8100B CMOS DRAM 8M x 8bit CMOS Dynamic RAM with Fast Page Mode DESCRIPTION This is a family of 8,388,608 x 8 bit Fast Page Mode CMOS DRAMs. Fast Page Mode offers high speed random access of memory cells within the same row. Refresh cycle 4K Ref. or 8K Ref. , access time (-45, -5 or -6), package type (SOJ or TSOP-II) are optional features
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PDF
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KM48C8000B,
KM48C8100B
400mil
KM48c8100
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Untitled
Abstract: No abstract text available
Text: DRAM MODULE KMM372C80 8 3BK/BS KMM372C80(8)3BK/BS Fast Page Mode 8Mx72 DRAM DIMM with ECC Using 8Mx8, 4K & 8K Refresh, 5V GENERAL DESCRIPTION The Samsung KMM372C80(8)3B is a 8Mx72bits Dynamic RAM high density memory module. The Samsung KMM372C80(8)3B consists of nine CMOS 8Mx8bits DRAMs
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KMM372C80
8Mx72
8Mx72bits
400mil
168-pin
100Max
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KM44C4105C-6
Abstract: KM44C16004
Text: General Information CMOS DRAM 1. introduction 4Mbit 4Mx1 KM41C4000D-5 - KM41C4000D-6 - KM41C4000D-7 KM41C4000D-L5 1Mx4 KM41C4000D-L6 KM41C4000D-L7 KM41V4000D-6 KM41V4000D-7 KM41V4000D-L6 KM41V4000D-L7 KM44C1000D-5 - KM44C1000D-6 - KM44C1000D-7 KM44C1000D-L5 - KM44C1000D-L6 - KM44C1000D-L7
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KM41C4000D-5
KM41C4000D-6
KM41C4000D-7
KM41C4000D-L5
KM41C4000D-L6
KM41V4000D-6
KM41V4000D-L6
KM41C4000D-L7
KM41V4000D-7
KM41V4000D-L7
KM44C4105C-6
KM44C16004
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Untitled
Abstract: No abstract text available
Text: KM48C8000B, KM48C81OOB CMOS DRAM 8M x 8bit CMOS Dynamic RAM with Fast Page Mode DESCRIPTION This is a family of 8,388,608 x 8 bit Fast Page Mode CMOS DRAMs. Fast Page Mode offers high speed random access of memory cells within the same row. Refresh cyde{4K Ref. or 8K Ref , access time -45, -5 or -6), package type (SOJ or TSOP-II) are optional features
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OCR Scan
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PDF
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KM48C8000B,
KM48C81OOB
KM48C8000B
KM48C8100B
tRASSSl00u8,
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Untitled
Abstract: No abstract text available
Text: DRAM MODULE KMM364C80 8 3BK/BS KM M364C80(8)3 BK/BS Fast Page Mode 8M x 64 DRAM DIMM Using 8Mx8, 4K & 8K Refresh, 5V GENERAL DESCRIPTION FEATURES The Samsung KMM364C80(8)3B is a 8Mx64bits Dynamic RAM high density memory module. The Samsung KMM364C80(8)3B consists of eight CMOS 8Mx8bits DRAMs
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OCR Scan
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KMM364C80
M364C80
8Mx64bits
400mil
168-pin
KMM364C803BK
KMM364C803BS
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k2624
Abstract: No abstract text available
Text: General Information CMOS DRAM 2. Product Guide Density Org. Power Supply 4Mbit 4Mx1 +5V±10% Part Number KM41C4000D# Spe«d ns 50/60/70 KM41 C4000D#-L +3.3V±0.3V KM41V4000D# 60/70 +5V±10% +3.3V±0.3V KM44C1000D# FP, LP KM44C1003D# Quad CÄS FP KM44C1004D#
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KM41C4000D#
C4000D
KM41V4000D#
KM41V4000W-L
KM44C1000D#
KM44C10OOD
KM44C1003D#
KM44C1004D#
KM44C1004D
KM44C1005D#
k2624
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ltw connector 12 pin
Abstract: No abstract text available
Text: DRAM MODULE KM M364C80 8 3B K/BS KMM364C80(8)3BK/BS Fast Page Mode 8M x 64 DRAM DIMM Using 8Mx8, 4K & 8K Refresh, 5V GENERAL DESCRIPTION FEATURES The Samsung KMM364C80(8)3B is a 8Mx64bits Dynamic RAM high density memory module. The Samsung KMM364C80(8)3B consists of eight CMOS 8Mx8bits DRAMs
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OCR Scan
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PDF
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KMM364C80
8Mx64bits
400mil
168-pin
M364C80
KMM364C803BK
KMM364C803BS
ltw connector 12 pin
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48c8000
Abstract: No abstract text available
Text: DRAM M ODULE KM M 3 72C80 8 3B K/B S Buffered 8Mx72 DIMM (8Mx8 base) Revision 0.0 Sept. 1997 DRAM M ODULE KM M 3 72C80( 8) 3B K/B S Revi si on Hi st or y Version 0.0 (Sept, 1 997) Removed two AC parameters t CACP(access time from CAS) and tAAP(access time from col. addr.) in AC CHARACTERISTICS.
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72C80(
8Mx72
KMM372C80
8Mx72bits
400mil
48c8000
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