KM48c8100A
Abstract: No abstract text available
Text: KM48C8000A, KM48C8100A CMOS DRAM 8M x 8 Bit CMOS Dynamic RAM with Fast Page Mode DESCRIPTION This is a family of 8,388,608 x 8 bit Fast Page Mode CMOS DRAMs. Fast Page Mode offers high speed random access of memory cells within the same row. Refresh cucye 4K Ref. or 8K Ref. , access time(-5, -6,
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KM48C8000A,
KM48C8100A
KM48c8100A
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KM48c8100A
Abstract: No abstract text available
Text: KM48C8000A, KM48C8100A CMOS DRAM 8M x 8 Bit CMOS Dynamic RAM with Fast Page Mode DESCRIPTION This is a family of 8,388,608 x 8 bit Fast Page Mode CMOS DRAMs. Fast Page Mode offers high speed random access of memory cells within the same row. Refresh cucye 4K Ref. or 8K Ref. , access time(-5, -6,
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KM48C8000A,
KM48C8100A
KM48C8000A
KM48C8100A
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KM48C8000AS
Abstract: KM48c8100A KM48c8100as
Text: KMM364C803AK/AS KMM364C883AK/AS DRAM MODULE KMM364C803AK/AS & KMM364C883AK/AS Fast Page Mode 8Mx64 DRAM DIMM based on 8Mx8, 4K & 8K Refresh, 5V GENERAL DESCRIPTION FEATURES The Samsung KMM364C80 8 3A is a 8M bit x 64 Dynamic RAM high density memory module. The
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KMM364C803AK/AS
KMM364C883AK/AS
KMM364C803AK/AS
KMM364C883AK/AS
8Mx64
KMM364C80
400mil
48pin
168-pin
KM48C8000AS
KM48c8100A
KM48c8100as
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1004CL
Abstract: 44V16 366F 44C40 372V3280 2100B-7 M5368 KMM5368103B 44v16100 dram module kmm 2mx32
Text: FUNCTION GUIDE 1. INTRODUCTION DRAM Module I. Single In-Line M em ory M odule SIMM l-i. Fast Page ( FP ) Mode 5 V [T6M~Based j- f — ftM x 3 g "KMM5321200BW/BWG-6 H ~KM M 5321200BW/BWG-' -|lM x 3 6 [2MX32 KMM5322100BKU/BKUG-5 K —[2Mx36 H H | KMM5322100BKÜ/BKÛ g ^K 1<M M 5322-| OOBKU/BKUG3-7
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KMM5321200BW/BWG-6
5321200BW/BWG-'
KMM5361203BW/8
KMM5322200BW/BWG-6
KMM5322100BKU/BKUG-5
MM5361203BW/BWG-7
KMM5322200BW/BWG-7
2MX32
KMM5322100BK
2Mx36
1004CL
44V16
366F
44C40
372V3280
2100B-7
M5368
KMM5368103B
44v16100
dram module kmm 2mx32
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km48c8100as
Abstract: No abstract text available
Text: KMM372C803AK/AS KM M372C883AK/AS DRAM MODULE KMM372C803AK/AS & KMM372C883AK/AS Fast Page Mode 8Mx72 DRAM DIMM with ECC based on 8Mx8, 4K & 8K Refresh, 5V GENERAL DESCRIPTION FEATURES The Samsung KMM372C80 8 3A is a 8M bit x 72 • Part Identification Part number
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KMM372C803AK/AS
M372C883AK/AS
KMM372C883AK/AS
8Mx72
KMM372C80
KMM372C803AK
400mil
KMM372C803AS
km48c8100as
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1004CL
Abstract: KM48V2104B KM44V16104AK KM416V256BL 4M DRAM EDO KM48V2100B 44v16104 1mx1 DRAM DIP
Text: CMOS DRAM General Information 2. Product Guide D e iifty m » iJ P P N M I>1SS:<?p7ÍRRk3^ 1M bit 1Mx1 5V±10% KM41C1000D# 256Kx4 5V±10% KM44C256D# 128Kx8 5V±10% KM48C128# 60/70/80 Fast Page P:18 Pin DIP 1Mx1 60/70/80 Fast Page J:20 Pin SOJ 55/60/70 Fast Page
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KM41C1000D#
KM41C1000D-L#
256Kx4)
256Kx4
KM44C256D#
KM44C256D-L#
128Kx8
KM48C128#
KM48C128
KM48C124#
1004CL
KM48V2104B
KM44V16104AK
KM416V256BL
4M DRAM EDO
KM48V2100B
44v16104
1mx1 DRAM DIP
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Untitled
Abstract: No abstract text available
Text: KM48C8004A, KM48C8104A CMOS DRAM 8M x 8 Bit CMOS Dynamic RAM with Extended Data Out DESCRIPTION This is a family of 8,388,608 x 8 bit Extended Data Out Mode CMOS DRAMs. Extended Data Out Mode offers high speed random access of memory cells within the same row. Refresh cycle 4K Ref. or 8K Ref. ,
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KM48C8004A,
KM48C8104A
KM48C8004A
7Tb4142
0ID234D5
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KM44C16100A
Abstract: km44c16000
Text: MEMORY ICs D e n s ity 64M bit O r* D *IUAA. rVwVr 16Mx4 5V±10% 3.3V+0.3V FUNCTION GUIDE Baokaou. P u rrN o m ta r. KM44C16000A# Fast Page 8K K : 32 Pin SOJ [400mil] KM44C16100A# Fast Page(4K) S : 32 pin TSOP ll(Forward) KM44C16004A# EDO(8K) KM44C16104A#
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KM44C16000A#
KM44C16100A#
KM44C16004A#
KM44C16104A#
400mil]
16Mx4
KM44V16000A#
KM44V16000A
KM44V16100A#
KM44C16100A
km44c16000
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KM416C60-7
Abstract: KM48C2104B KM416C60-6 KM48C2004B dram 64kx1 km416c60 KM44V1004CL-7
Text: General Information CMOS DRAM 1. Introduction j KM41C1000D-6 1M bit KM41C1000D-7 KM41C1000D-8 I KM41C1000D-L6|—¡ KM41C1000D-L7[— j KM41C1000D-L8 1 4M bit M 64Kx1« 4Mx1 KM48C124-55 —j KM48C124-6 KM48C124-7 KM416C60-55 — KM416C60-6 KM416C60-7 KM416C64-55
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KM41C1000D-6
KM41C1000D-7
KM41C1000D-8
KM41C1000D-L6
KM41C1000D-L7
KM41C1000D-L8
KM48C124-55
KM48C124-6
KM416C60-6
KM416C64-6
KM416C60-7
KM48C2104B
KM48C2004B
dram 64kx1
km416c60
KM44V1004CL-7
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km44c2560
Abstract: KM48V2104B-6 KM44C16004A-5
Text: MEMORY ICs FUNCTION GUIDE DRAM For reference 1M bit 258KX4 KM41C1000D-6 —i KM41C1000D-7 KM41C1000D-L6 —i KM41C1000D-L7 KM44C2560-6 —j KM44C256D-7 KM44C256D-L6 1M B/W r , 128KX8 • KM48C128-55 —\ KM48C128-6 — KM41C1000D-L6 - KM44C256D-8 i KM44C256D-L8
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KM41C1000D-6
KM41C1000D-L6
KM41C1000D-7
KM41C1000D-L7
KM44C256D-7
KM44C256D-L7
KM41C1000D-8
258KX4
KM44C2560-6
km44c2560
KM48V2104B-6
KM44C16004A-5
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Untitled
Abstract: No abstract text available
Text: KMM364C803AK/AS KMM364C883A K/AS DRAM MODULE KMM364C803AK/AS & KMM364C883AK/AS Fast Page Mode 8Mx64 DRAM DIMM based on 8Mx8, 4K & 8K Refresh, 5V GENERAL DESCRIPTION FEATURES The Samsung KMM364C80 8 3A is a 8M bit x 64 • Part Identification D ynam ic RAM high density m em ory module. The
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KMM364C803AK/AS
KMM364C883A
KMM364C883AK/AS
8Mx64
KMM364C80
364C80
M364C803AK
400mil
M364C803AS
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