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    Untitled

    Abstract: No abstract text available
    Text: KM44C4005B, KM44C4105B CMOS DRAM 4 M x 4 B i t CMOS Quad CAS DRAM with Extended Data Out DESCRIPTION This is a family of 4,194,304 x 4bit Quad CAS with Extended Data Out Mode DRAMs. Extended Data Out Mode offers high speed random access of memory cells within the same row, so called Hyper Page Mode.


    OCR Scan     		PDF KM44C4005B, KM44C4105B

    Untitled

    Abstract: No abstract text available
    Text: KM44C4005B, KM44C4105B CMOS DRAM 4M x 4 Bit CMOS Quad CAS DRAM with Extended Data Out DESCRIPTION This is a family of 4,194,304 x 4bit Quad CAS with Extended Data Out Mode DRAMs. Extended Data Out Mode offers high speed random access of memory cells within the same row, so called Hyper Page Mode.


    OCR Scan     		PDF KM44C4005B, KM44C4105B b4142

    A0-A10J-1

    Abstract: S71214
    Text: KM44C4005B, KM44C4105B CMOS DRAM 4M x 4 Bit CMOS Quad CAS DRAM with Extended Data Out DESCRIPTION This is a fam ily of 4,194,304 x 4 b it Quad CAS with Extended Data O ut M ode DRAM s. Extended Data Out M ode offers high speed random access of m emory cells within the same row, so called H yper Page Mode.


    OCR Scan     		PDF KM44C4005B, KM44C4105B R55-only A0-A10J-1 S71214

    Untitled

    Abstract: No abstract text available
    Text: K M 4 4 C 4 10 5 B K CMOS DRAM ELECTRONICS 4M x 4 Bit CMOS Quad CAS DRAM with Extended Data Out DESCRIPTION This is a family of 4,194,304 x 4bit Quad CAS with Extended Data Out Mode DRAMs. Extended Data Out Mode offers high speed random access of memory cells within the same row, so called Hyper Page Mode.


    OCR Scan     		PDF KM44C4105BK 003470b

    Untitled

    Abstract: No abstract text available
    Text: KM44C4005BS CMOS DRAM ELECTRONICS 4M x 4 Bit CMOS Quad CAS DRAM with Extended Data Out DESCRIPTION This is a family of 4,194,304 x 4bit Quad CAS with Extended Data Out Mode DRAMs. Extended Data Out Mode offers high speed random access of memory cells within the same row, so called Hyper Page Mode.


    OCR Scan     		PDF KM44C4005BS 16Mx4, 512Kx8) 71b414E 003455b

    Untitled

    Abstract: No abstract text available
    Text: K M 4 4 C 4 1 05B S ELECTRONICS CMOS D R A M 4 M x 4 Bit CMOS Quad CAS DRAM with Extended Data Out DESCRIPTION This is a family of 4,194,304 x 4bit Quad CAS with Extended Data Out Mode DRAMs. Extended Data Out Mode offers high speed random access of memory cells within the same row, so called Hyper Page Mode.


    OCR Scan     		PDF 16Mx4, 512Kx8) KM44C4105BS GG34727 71b4142 Q03472Ã

    1004CL

    Abstract: 44V16 366F 44C40 372V3280 2100B-7 M5368 KMM5368103B 44v16100 dram module kmm 2mx32
    Text: FUNCTION GUIDE 1. INTRODUCTION DRAM Module I. Single In-Line M em ory M odule SIMM l-i. Fast Page ( FP ) Mode 5 V [T6M~Based j- f — ftM x 3 g "KMM5321200BW/BWG-6 H ~KM M 5321200BW/BWG-&#39; -|lM x 3 6 [2MX32 KMM5322100BKU/BKUG-5 K —[2Mx36 H H | KMM5322100BKÜ/BKÛ g ^K 1<M M 5322-| OOBKU/BKUG3-7


    OCR Scan     		PDF KMM5321200BW/BWG-6 5321200BW/BWG-' KMM5361203BW/8 KMM5322200BW/BWG-6 KMM5322100BKU/BKUG-5 MM5361203BW/BWG-7 KMM5322200BW/BWG-7 2MX32 KMM5322100BK 2Mx36 1004CL 44V16 366F 44C40 372V3280 2100B-7 M5368 KMM5368103B 44v16100 dram module kmm 2mx32

    Untitled

    Abstract: No abstract text available
    Text: KMM5364005BK/BKG KMM5364105BK/BKG DRAM MODULE KMM5364005BK/BKG & KMM5364105BK/BKG Fast Page with EDO Mode 4Mx36 DRAM SIMM, 4K & 2K Refresh, using 16M Quad CAS EDO DRAM GENERAL DESCRIPTION FEATURES The Samsung KM M 53640 1 05BK is a 4M bit x 36 • Part Identification


    OCR Scan     		PDF KMM5364005BK/BKG KMM5364105BK/BKG KMM5364105BK/BKG 4Mx36 KMM5364005BK cycles/64ms KMM53640 KMM5364005BKG

    1004CL

    Abstract: KM48V2104B KM44V16104AK KM416V256BL 4M DRAM EDO KM48V2100B 44v16104 1mx1 DRAM DIP
    Text: CMOS DRAM General Information 2. Product Guide D e iifty m » iJ P P N M I>1SS:<?p7ÍRRk3^ 1M bit 1Mx1 5V±10% KM41C1000D# 256Kx4 5V±10% KM44C256D# 128Kx8 5V±10% KM48C128# 60/70/80 Fast Page P:18 Pin DIP 1Mx1 60/70/80 Fast Page J:20 Pin SOJ 55/60/70 Fast Page


    OCR Scan     		PDF KM41C1000D# KM41C1000D-L# 256Kx4) 256Kx4 KM44C256D# KM44C256D-L# 128Kx8 KM48C128# KM48C128 KM48C124# 1004CL KM48V2104B KM44V16104AK KM416V256BL 4M DRAM EDO KM48V2100B 44v16104 1mx1 DRAM DIP

    km416c254

    Abstract: No abstract text available
    Text: MEMORY ICs FUNCTION GUIDE P o w er D ensity' 4M B/W 256KX16 5V±10% KM416C256B# 50/60/70 Fast Page KM416C256BL# J:40 Pin SOJ T:40 Pin TSOP-ll Forward KM416C254S# EDO KM416C254BL# 3.3V±0.3V KM416V256B# 60/70/80 Fast Page KM416V25SBL# KM416V254B# EDO KM416V254BL#


    OCR Scan     		PDF KM416C256B# KM416C256BL# KM416C254S# KM416C254BL# KM416V256B# KM416V25SBL# KM416V254B# KM416V254BL# 256KX16 16Mx1 km416c254

    Untitled

    Abstract: No abstract text available
    Text: K M 44C4005BK CMOS DRAM ELECTRONICS 4M x 4 Bit CMOS Quad CAS DRAM with Extended Data Out DESCRIPTION This is a family of 4,194,304 x 4bit Quad CAS with Extended Data Out Mode DRAMs. Extended Data Out Mode offers high speed random access of memory cells within the same row, so called Hyper Page Mode.


    OCR Scan     		PDF 44C4005BK KM44C4005BK

    KM416C60-7

    Abstract: KM48C2104B KM416C60-6 KM48C2004B dram 64kx1 km416c60 KM44V1004CL-7
    Text: General Information CMOS DRAM 1. Introduction j KM41C1000D-6 1M bit KM41C1000D-7 KM41C1000D-8 I KM41C1000D-L6|—¡ KM41C1000D-L7[— j KM41C1000D-L8 1 4M bit M 64Kx1« 4Mx1 KM48C124-55 —j KM48C124-6 KM48C124-7 KM416C60-55 — KM416C60-6 KM416C60-7 KM416C64-55


    OCR Scan     		PDF KM41C1000D-6 KM41C1000D-7 KM41C1000D-8 KM41C1000D-L6 KM41C1000D-L7 KM41C1000D-L8 KM48C124-55 KM48C124-6 KM416C60-6 KM416C64-6 KM416C60-7 KM48C2104B KM48C2004B dram 64kx1 km416c60 KM44V1004CL-7

    km44c2560

    Abstract: KM48V2104B-6 KM44C16004A-5
    Text: MEMORY ICs FUNCTION GUIDE DRAM For reference 1M bit 258KX4 KM41C1000D-6 —i KM41C1000D-7 KM41C1000D-L6 —i KM41C1000D-L7 KM44C2560-6 —j KM44C256D-7 KM44C256D-L6 1M B/W r , 128KX8 • KM48C128-55 —\ KM48C128-6 — KM41C1000D-L6 - KM44C256D-8 i KM44C256D-L8


    OCR Scan     		PDF KM41C1000D-6 KM41C1000D-L6 KM41C1000D-7 KM41C1000D-L7 KM44C256D-7 KM44C256D-L7 KM41C1000D-8 258KX4 KM44C2560-6 km44c2560 KM48V2104B-6 KM44C16004A-5

    Untitled

    Abstract: No abstract text available
    Text: KMM5368005BK/BKG KMM5368105BK/BKG DRAM MODULE KMM5368005BK/BKG & KMM5368105BK/BKG Fast Page with EDO Mode 8Mx36 DRAM SIMM, 4K & 2K Ref, using 16M Quad CAS EDO DRAM FEATURES GENERAL DESCRIPTION The Samsung KMM53680 1 05BK is a 8M bit x 36 Dynamic RAM high density memory module. The


    OCR Scan     		PDF KMM5368005BK/BKG KMM5368105BK/BKG KMM5368105BK/BKG 8Mx36 KMM53680 24-pin 28-pin 72-pin