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KM41C4000BLJ-7 Abstract: km41c4000 Text: KM41C4000BL CMOS DRAM 4 M x 1 Bit C M O S Dynamic RAM with Fast Page M ode FEATURES GENERAL DESCRIPTION • Performance range: The Samsung KM41C4000BL is a high speed CMOS 4,194,304 x 1 Dynamic Random Access Memory. Its design is optimized for high performance applications	OCR Scan	PDF	KM41C4000BL KM41C4000BL-6 KM41C4000BL-7 KM41C4000BL-8 110ns 130ns 150ns KM41C4000BL 20-LEAD KM41C4000BLJ-7 km41c4000
KM44C1000BJ Abstract: 4Mx1 4Mx1 nibble Text: FUNCTION G U IDE M E M O R Y IC s Dynamic R A M Continued Capacity 4 M bit Part Number Organization Speed(ns) Technology Features Packages Remark KM41C4000BTR 4 Mx1 60/70/80 CMOS Fast Page 20 Pin TSOP-ll(Reverse) Now KM41C4000BLP KM41C4000BU KM41C4000BLZ	OCR Scan	PDF	KM41C4000BTR KM41C4000BLP KM41C4000BU KM41C4000BLZ KM41C4000BLV KM41C4000BLVR KM41C4000BLT KM41C4000BLTR KM41C4000BSLP KM41C4000BSU KM44C1000BJ 4Mx1 4Mx1 nibble
KM424C256Z Abstract: KM41C464 PB20 KM64258 KM68512 KMM5362000 KM23C2 64k 30-pin SIMM KM23C4000A KM41C4000BJ Text: MEMORY ICs FUNCTION GUIDE 2. PRODUCT GUIDE 2.1 Dynamic RAM Capacity 256K bit Part Number KM41C256P KM41C255J KM41C258Z KM41C257P KM41C257J KM41C257Z KM41C25BP KM41C258J KM41C258Z Features Packages Remark 256K X 1 256K X 1 256K X 1 256K X 1 70/80/100 70/80/100	OCR Scan	PDF	KM41C256P KM41C255J KM41C258Z KM41C257P KM41C257J KM41C257Z KM41C25BP KM41C258J KM41C464P KM424C256Z KM41C464 PB20 KM64258 KM68512 KMM5362000 KM23C2 64k 30-pin SIMM KM23C4000A KM41C4000BJ
Untitled Abstract: No abstract text available Text: SAMSUNG ELECTRONICS INC b?E D • 7^1,4142 DDlS57b 114 I KM41C4000BL SMGK CMOS DRAM 4M X 1 Bit CMOS Dynamic RAM with Fast Page Mode GENERAL DESCRIPTION FEATURES • Perform ance range: I rac *CAC <RC KM41C4000BL-6 60ns 15ns 110ns KM41C4000BL-7 70ns 20ns 130ns	OCR Scan	PDF	DDlS57b KM41C4000BL KM41C4000BL-6 110ns KM41C4000BL-7 130ns KM41C4000BL-8 150ns cycles/128ms 495/440/385mW