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    KM41C40 Search Results

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    KM41C40 Price and Stock

    Samsung Semiconductor KM41C4000AJP

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    Bristol Electronics KM41C4000AJP 408
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    Samsung Semiconductor KM41C4000DJ-6

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    Bristol Electronics KM41C4000DJ-6 237
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    Samsung Semiconductor KM41C4000AJ-8

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    Bristol Electronics KM41C4000AJ-8 170
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    Samsung Semiconductor KM41C4000CJ-6

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    Samsung Semiconductor KM41C4000CJ-7

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    KM41C40 Datasheets (57)

    Part ECAD Model Manufacturer Description Curated Datasheet Type PDF
    KM41C4000 Unknown Historical semiconductor price guide (US$ - 1998). From our catalog scanning project. Historical PDF
    KM41C4000A-10 Unknown Static RAM, Dynamic RAM, Video RAM - Short Form Datasheets Scan PDF
    KM41C4000A-7 Unknown Static RAM, Dynamic RAM, Video RAM - Short Form Datasheets Scan PDF
    KM41C4000A-8 Unknown Static RAM, Dynamic RAM, Video RAM - Short Form Datasheets Scan PDF
    KM41C4000AL-10 Unknown Static RAM, Dynamic RAM, Video RAM - Short Form Datasheets Scan PDF
    KM41C4000AL-7 Unknown Static RAM, Dynamic RAM, Video RAM - Short Form Datasheets Scan PDF
    KM41C4000AL-8 Unknown Static RAM, Dynamic RAM, Video RAM - Short Form Datasheets Scan PDF
    KM41C4000ASL-10 Unknown Static RAM, Dynamic RAM, Video RAM - Short Form Datasheets Scan PDF
    KM41C4000ASL-7 Unknown Static RAM, Dynamic RAM, Video RAM - Short Form Datasheets Scan PDF
    KM41C4000ASL-8 Unknown Static RAM, Dynamic RAM, Video RAM - Short Form Datasheets Scan PDF
    KM41C4000B-6 Unknown Static RAM, Dynamic RAM, Video RAM - Short Form Datasheets Scan PDF
    KM41C4000B-7 Unknown Static RAM, Dynamic RAM, Video RAM - Short Form Datasheets Scan PDF
    KM41C4000B-8 Unknown Static RAM, Dynamic RAM, Video RAM - Short Form Datasheets Scan PDF
    KM41C4000D Samsung Electronics 4M x 1-Bit CMOS Dynamic RAM with Fast Page Mode Original PDF
    KM41C4000DJ-5 Samsung Electronics 4M x 1-Bit CMOS Dynamic RAM with Fast Page Mode Original PDF
    KM41C4000DJ-6 Samsung Electronics 4M x 1-Bit CMOS Dynamic RAM with Fast Page Mode Original PDF
    KM41C4000DJ-7 Samsung Electronics 4M x 1-Bit CMOS Dynamic RAM with Fast Page Mode Original PDF
    KM41C4000DJ-L-5 Samsung Electronics 4M x 1-Bit CMOS Dynamic RAM with Fast Page Mode Original PDF
    KM41C4000DJ-L-6 Samsung Electronics 4M x 1-Bit CMOS Dynamic RAM with Fast Page Mode Original PDF
    KM41C4000DJ-L-7 Samsung Electronics 4M x 1-Bit CMOS Dynamic RAM with Fast Page Mode Original PDF

    KM41C40 Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    Untitled

    Abstract: No abstract text available
    Text: CMOS DRAM KM41C4000AL 4 M X 1 Bit CMOS Dynamic RAM with Fast Page Mode FEATURES GENERAL DESCRIPTION • Perform ance range: The Samsung K M 4 1 C 4 0 0 0 A L is a high speed CMOS 4 ,1 9 4 ,3 0 4 bit X 1 Dynamic Random A ccess M em ory. Its design is optimized for high perform ance applications


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    PDF KM41C4000AL 4000AL- 20-LEAD

    Untitled

    Abstract: No abstract text available
    Text: CMOS DRAM KM41C4000C/CL/CSL 4M x 1 Bit CMOS Dynamic RAM with Fast Page Mode FEATURES GENERAL DESCRIPTION • Performance range: tR A C tC A C tR C KM41C4000C/CL/CSL-5 50ns 13ns 90ns KM41C4000C/CL/CSL-6 60ns 15ns 110ns KM41C4000C/CL/CSL-7 70ns 20ns 130ns KM41C4000C/CL7CSL-8


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    PDF KM41C4000C/CL/CSL KM41C4000C/CL/CSL-5 KM41C4000C/CL/CSL-6 110ns KM41C4000C/CL/CSL-7 130ns KM41C4000C/CL7CSL-8 150ns KM41C4000C/CL/CSL

    Untitled

    Abstract: No abstract text available
    Text: CMOS DRAM KM41C4002A 4 M X 1 Bit CMOS Dynamic RAM with Static Column Mode FEATURES GENERAL DESCRIPTION • Perform ance range: The Samsung K M 41C 4002A is a high speed CMOS 4 ,1 9 4 ,3 0 4 bit X 1 Dynamic Random Access Memory. Its design is optimized for high performance applications


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    PDF KM41C4002A 130ns 150ns 100ns 180ns 18-LEAD 20-LEAD

    Untitled

    Abstract: No abstract text available
    Text: KM41C4000C, KM41V4000C CMOS DRAM 4M x 1 Bit CMOS Dynamic RAM with Fast Page Mode DESCRIPTION This is a family of 4,194,304 x 1 bit Fast Page Mode CMOS DRAMs. Fast Page Mode offers high speed random access of memory cells within the same row. Power supply voltage +5.0V or +3.3V , access


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    PDF KM41C4000C, KM41V4000C 1024cycles 00231fc

    Untitled

    Abstract: No abstract text available
    Text: SAMSUNG ELECTRONICS INC bME D • 7^4142 DD131S7 524 B S H 6 K KM41C4000AL CMOS DRAM 4 M X 1 Bit CMOS Dynamic RAM with Fast Page Mode FEATURES GENERAL DESCRIPTION • Perform ance range: The Samsung KM 41C4000AL is a high speed CMOS 4 ,1 9 4 ,3 0 4 bit X 1 Dynamic Random Access Memory.


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    PDF DD131S7 KM41C4000AL 41C4000AL 41C4000AL- 130ns 150ns 100ns 180ns 200ns

    km41c4000

    Abstract: No abstract text available
    Text: KM41C4000/L CMOS DRAM 4 M X 1 Bit CMOS Dynamic RAM with Fast Page Mode FEATURES GENERAL DESCRIPTION • Perform ance range: The Samsung K M 4 1C 4 0 0 0 /L is a high speed CMOS 4 ,1 9 4 ,3 0 4 bit X 1 dynamic Random Access Memory. Its design is optimized for high performance applications


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    PDF KM41C4000/L 100ns 180ns 20-LEAD km41c4000

    KMM584000

    Abstract: KM41C4000J
    Text: KM M584000 DRAM MODULES 4 M x 8 CMOS DRAM SIMM Memory Module FEATURES GENERAL DESCRIPTION • Performance range: The Samsung KMM584000 is a 4M b itx 8 Dynamic RAM high density memory module. The Samsung KMM584000 consist of eight KM41C4000J DRAMs in 20-pin SOJ package mounted on a 30-pin glass-epoxy


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    PDF M584000 KMM584000-8 KMM584000-10 100ns 150ns 180ns KMM584000 KM41C4000J 20-pin

    Untitled

    Abstract: No abstract text available
    Text: CMOS DRAM KM41C4001B 4M x 1Bit CMOS Dynamic RAM with Nibble Mode FEATURES GENERAL DESCRIPTION • Performance range: The Samsung KM41C4001B is a CMOS highspeed 4,194,304x1 Dynamic Random Access Memory. Its design is optimized for high performance applications


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    PDF KM41C4001B 110ns 130ns 150ns KM41C4001B 304x1 KM41C4001B-6 KM41C4001BPACKAGE

    KM41C4000A

    Abstract: No abstract text available
    Text: KMM584020A DRAM MODULES 4M X 8 CMOS DRAM SIMM Memory Module, Low Power FEATURES GENERAL DESCRIPTION • Performance range: The Samsung KMM584020A is a 4M bit x 8 Dynamic RAM high density memory module. The Samsung KMM584020A consist o f eight KM41C4000ALJ DRAMs


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    PDF KMM584020A KMM584020A KM41C4000ALJ 20-pin 30-pin 22/xF M584020A-7 KM41C4000A

    Untitled

    Abstract: No abstract text available
    Text: KMM594000A DRAM MODULES 4 M X 9 CMOS DRAM SIMM Memory Module FEATURES GENERAL DESCRIPTION • Performance range: The Samsung KMM594000A is a 4M bit X 9 Dynamic RAM high density memory module. The Samsung KMM594000A consist of nine KM41C4000AJ DRAMs in 20-pin SOJ package mounted on a 30-pin glass-epoxy


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    PDF KMM594000A 130ns 150ns 180ns KMM594000A 30-pin KM41C4000AJ 20-pin

    KM41C4000BJ7

    Abstract: KM41C4000BJ6 KM41C4000BJ km41c4000B KM41C4000BJ-6
    Text: KM41C4000B CMOS DRAM 4M x 1 Bit CMOS Dynamic RAM with Fast Page Mode GENERAL DESCRIPTION FEATURES • Performance range: • • • • • • • • • • tRAC tcAc tRC KM41C4000B-6 60ns 15ns 110ns KM41C4000B-7 70ns 20ns 130ns KM41C4000B-8 80ns 20ns


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    PDF KM41C4000B KM41C4000B-6 KM41C4000B-7 KM41C4000B-8 110ns 130ns 150ns KM41C4000B KM41C4000BJ7 KM41C4000BJ6 KM41C4000BJ KM41C4000BJ-6

    Samsung Capacitor sms

    Abstract: km41c4000aj KM41C4000A
    Text: D3AM MODULES KMM59400QA 4 M X 9 CMOS DRAM SIMM Memory Module FEATURES GENERAL DESCRIPTION • Performance range: The Samsung KMM594000A is a 4M bit X 9 Dynamic RAM high density memory module. The Samsung KMM594000A consist of nine KM41C4000AJ DRAMs in 20-pin SOJ package mounted on a 30-pin glass-epoxy


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    PDF KMM59400QA KMM594000A KM41C4000AJ 20-pin 30-pin KMM594000A- Samsung Capacitor sms KM41C4000A

    a6ee

    Abstract: No abstract text available
    Text: KM41C4002C CMOS DRAM 4M x 1 Bit CMOS Dynamic RAM with Static Column Mode DESCRIPTION This is a family of 4,194,304 x 1 bit Static Column Mode CMOS DRAMs. Static Column Mode offers high speed random or sequential access of memory cells within the same row. Access time -5, -6, -7 or -8 and


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    PDF KM41C4002C a6ee

    KM44C4000aS 6

    Abstract: KM44C4000AS KM44C4000A-S km44c4100as KM48V2100AL KM416V256BL
    Text: MEMORY ICs FUNCTION GUIDE 1. INTRODUCTION DRAM 4 M b it 4Mx1 1Mx4 KM41C4000C-6 KM41C4000C-7 " KM41C4000CL-5 KM41C4000CL-6 KM41C4000CL-7 KM41C4000CL-8 - KM41C4002C-5 KM41C4002C-6 KM41C4002C-7 KM41C4002C-8 - KM41V4000C-6 KM41V4000C-7 KM41V4000C-8 - KM41V4000CL-6


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    PDF KM41C4000C-5 KM41C4000CL-5 KM41C4002C-5 KM41C4000C-6 KM41C4000C-7 KM41C4000CL-7 KM41C4002C-7 KM41V4000C-7 KM41V4000CL-7 KM41C4000C-8 KM44C4000aS 6 KM44C4000AS KM44C4000A-S km44c4100as KM48V2100AL KM416V256BL

    23c2100

    Abstract: KM28C64-20 KM28C16-15 KM28C256J15 KM28C64-25 KM28C65-20 KM28C256-15 KM28C64A25 KM28C64J-20 KM28C64A-15
    Text: MEMORY ICs 1. INTRODUCTION 1.1 Dynamic RAM :§ SAMSUNG Electronics FUNCTION GUIDE FUNCTION GUIDE MEMORY ICs 4M bit 4M X 1 KM41C4000-8 - KM41C4000-10 KM41C4000L-8 - KM41C4000L-10 KM41C4001-8 KM41C4002-8 1M X 4 KM41C4001-10 — KM41C4002-10 KM41C4000A-7


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    PDF KM41C4000-8 KM41C4000-10 KM41C4000L-8 KM41C4000L-10 KM41C4001-8 KM41C4001-10 KM41C4002-8 KM41C4002-10 KM41C4000A-7 KM41C4000A-8 23c2100 KM28C64-20 KM28C16-15 KM28C256J15 KM28C64-25 KM28C65-20 KM28C256-15 KM28C64A25 KM28C64J-20 KM28C64A-15

    Untitled

    Abstract: No abstract text available
    Text: KM41C4000ASL CMOS DRAM 4 M X 1 Bit CMOS Dynamic RAM with Fast Page Mode FEATURES GENERAL DESCRIPTION • Performance range: The Samsung K M 4 1C 4 0 0 0 A S L is a high speed CMOS 4 ,1 9 4 ,3 0 4 bit X 1 Dynam ic Random A cce ss Mem ory. Its design is optimized for high perform ance applications


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    PDF KM41C4000ASL 4000ASL- 41C4000ASL- ASL-10 130ns 4000AS 18-LEAD 20-LEAD

    Untitled

    Abstract: No abstract text available
    Text: KMM594000 DRAM MODULES 4M x 9 CMOS DRAM Memory Module FEATURES GENERAL DESCRIPTION • Performance range: The Samsung KMM594000 Is a 4M b i t x 9 Dynamic RAM high density memory module. The Samsung KMM594000 consist of nine KM41C4000J DRAMs in 20-pin SOJ package mounted on a 30-pin glass-epoxy


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    PDF KMM594000 KMM594000-8 KMM594000-10 100ns 150ns 180ns KMM594000 KM41C4000J 20-pin

    Untitled

    Abstract: No abstract text available
    Text: CMOS DRAM KM41C4001A 4 M X 1 Bit CMOS Dynamic RAM with Nibble Mode FEATURES GENERAL DESCRIPTION • Performance range: The Samsung K M 4 1 C 4 0 0 1 A is a C M OS high speed 4 ,1 9 4 ,3 0 4 bit X 1 Dynamic Random A ccess Memory. Its design is optimized for high perform ance applications


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    PDF KM41C4001A 18-LEAD 20-LEAD

    Untitled

    Abstract: No abstract text available
    Text: KM41C4000D, KM41V4000D CMOS DRAM 4M x 1Bit CMOS Dynamic RAM with Fast Page Mode DESCRIPTION This is a family of 4,194,304 x 1 bit Fast Page Mode CMOS DRAMs. Fast Page Mode offers high speed random access of memory cells within the same row. Power supply voltage +5V or +3.3V , access time (-5, -6 or -7), power cons urn ption(Ncrmal or Low power), and


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    PDF KM41C4000D, KM41V4000D

    Untitled

    Abstract: No abstract text available
    Text: SAMSUNG ELECTRONICS INC b?E D • 7 ^ 4 1 4 2 DDlSSSfl 171 I KM41C4000B SUGK CMOS DRAM 4 M x 1 Bit CMOS Dynamic RAM with Fast Page Mode FEATURES GENERAL DESCRIPTION • Performance range: The Samsung KM41C4000B is a high speed CMOS 4,194,304 x 1 Dynamic Random Access Memory. Its de­


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    PDF KM41C4000B KM41C4000B 110ns KM41C4000B-7 130ns KM41C4000B-8 150ns KM41C4000B-6 SN54BCT8373A i1bl723

    Untitled

    Abstract: No abstract text available
    Text: KM41C4000ASL CMOS DRAM 4 M X 1 Bit CMOS Dynamic RAM with Fast Page Mode FEATURES GENERAL DESCRIPTION • The Samsung KM 41C4000ASL is a high speed CMOS 4,1 9 4 ,3 0 4 bit X 1 Dynamic Random Access Memory. Its design is optimized for high performance applications


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    PDF KM41C4000ASL 41C4000ASL 130ns 41C4000ASL- 150ns 41C40OOASL-10 100ns 180ns 20-LEAD

    Untitled

    Abstract: No abstract text available
    Text: CMOS DRAM KM41C4001A 4 M X 1 Bit CMOS Dynamic RAM with Nibble Mode FEATURES GENERAL DESCRIPTION Perform ance range: tR A C tC A C tR C 70 ns 20 ns 130ns K M 4 1 C 4 0 0 1 A- 8 80 ns 20 ns 1 50 ns K M 4 1 C 4 0 0 1 A -1 0 100 ns 25 ns 1 80 ns K M 4 1 C 4 0 0 1 A- 7


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    PDF KM41C4001A 130ns 18-LEAD 20-LEAD

    Untitled

    Abstract: No abstract text available
    Text: CMOS DRAM KM41C4001A 4 M X 1 Bit CMOS Dynamic RAM with Nibble Mode FEATURES GENERAL DESCRIPTION • Performance range: The Samsung K M 41C 4001A is a CMOS high speed 4 ,1 9 4 ,3 0 4 bit X 1 Dynamic Random Access Memory, Its design is optimized for high performance applications


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    PDF KM41C4001A 41C4001 KM41C4001A-1 180ns 18-LEAD 20-LEAD

    km41c4000bj7

    Abstract: KM41C4000BZ-7 KM41C4000BJ-6 KM41C4000BJ-8
    Text: KM41C4000B CMOS DRAM 4 M x 1 Bit CMOS Dynamic RAM with Fast Page Mode FEATURES GENERAL DESCRIPTION • Performance range: The Samsung KM41C4000B is a high speed CMOS 4,194,304 x 1 Dynamic Random Access Memory. Its de­ sign is optimized for high performance applications


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    PDF KM41C4000B KM41C4000B 110ns KM41C4000B-7 130ns KM41C4000B-8 150ns KM41C4000B-6 20-LEAD km41c4000bj7 KM41C4000BZ-7 KM41C4000BJ-6 KM41C4000BJ-8