KM41C4001
Abstract: C4001
Text: CMOS DRAM 41C4001 4 M X 1 Bit CMOS Dynamic RAM with Nibble Mode FEATURES GENERAL DESCRIPTION • Performance range: The Samsung KM 41C4001 is a high speed CMOS 4 ,1 9 4 ,3 0 4 bit x 1 Dynamic Random Access Memory. Its design is optimized for high performance applications
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KM41C4001
100ns
150ns
180ns
41C4001
KM41C4001
20-LEAD
C4001
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Untitled
Abstract: No abstract text available
Text: I 41C4001A ^ CM OS DRAM 4 M X 1 Bit CMOS Dynamic RAM with Nibble Mode FEATURES GENERAL DESCRIPTION Performance range: tR A C tC A C tRC 70ns 20ns 130ns KM 41C4001 A- 8 80ns 20ns 1 50ns K M 41C 4001A -10 100ns 25ns 1 80ns KM 41C4001 A- 7 Nibble Mode operation
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KM41C4001A
41Codify-write
18-LEAD
20-LEAD
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Untitled
Abstract: No abstract text available
Text: CMOS DRAM 41C4001 4 M X 1 Bit CMOS Dynamic RAM with Nibble Mode FEATURES GENERAL DESCRIPTION • Performance range: The Samsung KM 41C4001 is a high speed CMOS 4 ,1 9 4 ,3 0 4 bit X 1 Dynamic Random Access Memory. Its design is optimized for high performance applications
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KM41C4001
41C4001
100ns
180ns
200/js
20-LEAD
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KM41C4001-10
Abstract: No abstract text available
Text: J\41C4001 CMOS DRAM 4 M X 1 Bit CMOS Dynamic RAM with Nibble Mode FEATURES GENERAL DESCRIPTION • Performance range: The Samsung KM 41C4001 is a high speed CMOS 4 ,1 9 4 ,3 0 4 bit X 1 Dynamic Random Access Memory. Its design is optimized tor high performance applications
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J\M41C4001
41C4001
KM41C4001
KM41C4001
20-LEAD
KM41C4001-10
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Untitled
Abstract: No abstract text available
Text: CMOS DRAM 41C4001A 4 M X 1 Bit CMOS Dynamic RAM with Nibble Mode FEATURES GENERAL DESCRIPTION • Performance range: The Samsung K M 4 1 C 4 0 0 1 A is a C M OS high speed 4 ,1 9 4 ,3 0 4 bit X 1 Dynamic Random A ccess Memory. Its design is optimized for high perform ance applications
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KM41C4001A
18-LEAD
20-LEAD
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Untitled
Abstract: No abstract text available
Text: CMOS DRAM 41C4001A 4 M X 1 Bit CMOS Dynamic RAM with Nibble Mode FEATURES GENERAL DESCRIPTION Perform ance range: tR A C tC A C tR C 70 ns 20 ns 130ns K M 4 1 C 4 0 0 1 A- 8 80 ns 20 ns 1 50 ns K M 4 1 C 4 0 0 1 A -1 0 100 ns 25 ns 1 80 ns K M 4 1 C 4 0 0 1 A- 7
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KM41C4001A
130ns
18-LEAD
20-LEAD
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Untitled
Abstract: No abstract text available
Text: CMOS DRAM 41C4001A 4 M X 1 Bit CMOS Dynamic RAM with Nibble Mode FEATURES GENERAL DESCRIPTION • Performance range: The Samsung K M 41C 4001A is a CMOS high speed 4 ,1 9 4 ,3 0 4 bit X 1 Dynamic Random Access Memory, Its design is optimized for high performance applications
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KM41C4001A
41C4001
KM41C4001A-1
180ns
18-LEAD
20-LEAD
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Untitled
Abstract: No abstract text available
Text: SAMSUNG ELECTRONICS INC fc^E D • 7 R b m 4 5 DDlBlll 7T2 « S M Ö K 41C4001A CMOS DRAM 4 M X 1 Bit CMOS Dynamic RAM with Nibble Mode FEATURES GENERAL DESCRIPTION • Perform ance range: The Samsung K M 4 1 C 4 0 0 1 A is a CMOS high speed 4 ,1 9 4 ,3 0 4 bit X 1 Dynamic Random A ccess Memory.
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KM41C4001A
130ns
150ns
180ns
DD132DS
18-LEAD
20-LEAD
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Untitled
Abstract: No abstract text available
Text: si 41C4001A CMOS DRAM 4 M X 1 Bit CMOS Dynamic RAM with Nibble Mode FEATURES GENERAL DESCRIPTION • Performance range: The Samsung K M 41C 4001A is a CMOS high speed 4 ,1 9 4 ,3 0 4 bit X 1 Dynamic Random Access Memory. Its design is optimized for high performance applications
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KM41C4001A
41C4001
18-LEAD
20-LEAD
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41C464
Abstract: 41C258 41C1000 44C256C
Text: TABLE OF CONTENTS I. FUNCTION GUIDE 1. 2. 3. 4. Product G u id e.
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KM41C256
KM424C256
424C256A.
KM424C257
KM428C128
428C256.
41C464
41C258
41C1000
44C256C
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