KM418C256B
Abstract: No abstract text available
Text: KM418C256B/BL/BLL CMOS DRAM 256K x18 Bit CMOS Dynamic RAM with Fast Page Mode FEATURES GENERAL DESCRIPTION • Performance range: The Samsung KM418C256B/BLVBLL is a CMOS high spe ed 262,14 4 b it x 18 D ynam ic R andom A cce ss Memory. Its design is optimized for high performance
|
OCR Scan
|
PDF
|
KM418C256B/BL/BLL
KM418C256B/BLVBLL
256B/BL/BLL
40-LEAD
KM418C256B
|
ida5
Abstract: No abstract text available
Text: KM418C256B CMOS DRAM 256K x 18 Bit CM OS Dynamic RAM with Fast Page Mode DESCRIPTION This is a family of 262,144 x 18 bit Fast Page Mode CMOS DRAMs. Fast Page Mode offers high speed random access of memory cells within the same row. Access time -6, -7 or -8 , power consumption (Normal
|
OCR Scan
|
PDF
|
KM418C256B
256Kx18
ida5
|
km418c256bj
Abstract: NZ34 A6Dz
Text: CMOS DRAM KM418C256B 256K x 18 Bit CMOS Dynamic RAM with Fast Page Mode DESCRIPTION T his is a fam ily of 2 6 2,144 x 18 bit Fast Page M ode C M O S DRAM s. Fast Page M ode o ffe rs high speed random acce ss of m em ory cells w ithin the sam e row. A ccess tim e -6, -7 or -8 , pow er consum ption (Norm al
|
OCR Scan
|
PDF
|
KM418C256B
256Kx18
km418c256bj
NZ34
A6Dz
|
Untitled
Abstract: No abstract text available
Text: CMOS DRAM KM418C256B 256K x 18 Bit CM OS Dynamic RAM with Fast Page Mode DESCRIPTION T his is a fa m ily of 262 ,1 4 4 x 18 bit Fast Page M ode CM O S DRA M s. Fast Page M ode o ffe rs high speed random a cce ss of m em ory cells w ithin the sam e row. A ccess tim e -6, -7 or -8 , pow er consum ption (Norm al
|
OCR Scan
|
PDF
|
KM418C256B
71L4142
DD20251
|
Untitled
Abstract: No abstract text available
Text: KM418C256B/B L/BLL CMOS DRAM 256K X 18 Bit CMOS Dynamic RAM with Fast Page Mode FEATURES GENERAL DESCRIPTION • Performance range: The Samsung KM418C256B/BL7BLL is a CMOS high speed 2 6 2,14 4 b it x 18 D ynam ic R andom A cce ss Memory. Its design is optimized for high performance
|
OCR Scan
|
PDF
|
KM418C256B/B
KM418C256B/BL7BLL
110ns
KM418C256B/BL/BLL-7
130ns
KM418C256B/BL/BLL-8
150ns
KM418C256B/BL/BLL-6
40-LEAD
7Tb4142
|
KM44C4000aS 6
Abstract: KM44C4000AS KM44C4000A-S km44c4100as KM48V2100AL KM416V256BL
Text: MEMORY ICs FUNCTION GUIDE 1. INTRODUCTION DRAM 4 M b it 4Mx1 1Mx4 KM41C4000C-6 KM41C4000C-7 " KM41C4000CL-5 KM41C4000CL-6 KM41C4000CL-7 KM41C4000CL-8 - KM41C4002C-5 KM41C4002C-6 KM41C4002C-7 KM41C4002C-8 - KM41V4000C-6 KM41V4000C-7 KM41V4000C-8 - KM41V4000CL-6
|
OCR Scan
|
PDF
|
KM41C4000C-5
KM41C4000CL-5
KM41C4002C-5
KM41C4000C-6
KM41C4000C-7
KM41C4000CL-7
KM41C4002C-7
KM41V4000C-7
KM41V4000CL-7
KM41C4000C-8
KM44C4000aS 6
KM44C4000AS
KM44C4000A-S
km44c4100as
KM48V2100AL
KM416V256BL
|
Untitled
Abstract: No abstract text available
Text: TABLE OF CONTENTS I. PRODUCT GUIDE 1. Introduction. 11 2. Product G u id e . 18 3. DRAM Ordering System. 23
|
OCR Scan
|
PDF
|
KM41C1000D
KM44C256D.
KM41C4000C
KM41V4000C.
|
23C1001
Abstract: KMM5334100 km 23c 4000B KMM5362003C KM681001-25 KM68V257 KM428V256 23c4001 4100C M681000
Text: FUNCTION GUIDE MEMORY ICs 1. INTRODUCTION 1.1 Dynamic RAM 1Mx1 KM41C1000C-6 KM41C1000CL-6 KM41C1000CSL-6 256Kx4 4Mbit— 4Mx1 KM44C256C-6 KM44C256CL-6 KM44C256CL-7 KM 44C256CL-8 - KM44C256CSL-6 KM44C256CL-7 KM 44C256CL-8 — KM41C4000C-7 — KM41C4000C-8 KM41C4000C-5
|
OCR Scan
|
PDF
|
KM41C1000C-6
KM41C1000CL-6
KM41C1000CSL-6
256Kx4
KM44C256C-6
KM44C256CL-6
KM44C256CL-7
44C256CL-8
KM44C256CSL-6
23C1001
KMM5334100
km 23c 4000B
KMM5362003C
KM681001-25
KM68V257
KM428V256
23c4001
4100C
M681000
|
KM418C256
Abstract: KM48C2100AL KM416C254 KM44V4100AL KM44C1003
Text: FUNCTION GUIDE MEMORY ICs 2. PRODUCT GUIDE DRAM Density 1M bil Org. 1Mx1 Power Supply 5V±10% Part Number KM41C1000D# Speed(ns) 60/70/80 Features Fast Page 5V±10% KM44C256D# 60/70/80 Fast Page 4Mx1 5V±10% KM41C4000C# 50/60/70/80 Fast Page KM41C4002C# 60/70/80
|
OCR Scan
|
PDF
|
KM41C1000D#
KM41C10OOD-L#
256Kx4)
256Kx4
KM44C256D#
KM44C256D-L#
KM41C4000C#
KM41C4000CL#
KM41C4002C#
KM41V4000C#
KM418C256
KM48C2100AL
KM416C254
KM44V4100AL
KM44C1003
|
Untitled
Abstract: No abstract text available
Text: KM416C256B, KM416V256B CMOS DRAM 256K x 16 Bit CMOS Dynamic RAM with Fast Page Mode DESCRIPTION T his is a fa m ily of 262 ,1 4 4 x 16 bit Fast Page M ode C M O S D RAM s. Fast Page M ode o ffe rs high speed random a c c e s s of m em o ry ce lls w ithin th e sam e row. P ow er supply vo lta g e +5.0V o r +3.3V , a cce ss tim e
|
OCR Scan
|
PDF
|
KM416C256B,
KM416V256B
|
KMM5362
Abstract: KMM536256BW KMM536256B
Text: DRAM MODULE_/ _ 1 Mega Byte J KMM536256BW/BWG Fast Page Mode 256Kx36 DRAM SIMM Using 256Kx18 DRAM, 5V G E N E R A L D ESCRIPTIO N FEATURES The Samsung KMM536256BW is a 256K bit x 36 Dynamic RAM high density memory module. The • Performance Range:
|
OCR Scan
|
PDF
|
KMM536256BW/BWG
KMM536256BW
110ns
130ns
150ns
256Kx36
256Kx18
KMM5362
KMM536256B
|
KMCJ532512
Abstract: KM23C1000-20 KM28C64B KMM594 KM718B90-12 zip 40pin 30-pin simm memory "16m x 8" KM41C4000C-6 KM41C16000ALL KM48V2104AL
Text: FUNCTION GUIDE MEMORY ICs 1. 1.1 INTRODUCTION Dynamic RAM KM41C1000C-6 1Mx1 KM41C1000CL-6 KM41C1000CSL-6 25 6Kx4 KM44C256C-6 KM44C256CL-6 KM44C256CSL-6 4Mbit— 4Mx1 T KM41C4000C-5 — KM41C4000C-6 KM41C4000C-7 KM41C4000C-8 KM41C4000CL-5 KM41C4000CL-6 KM41C4000CL-7
|
OCR Scan
|
PDF
|
KM41C1000C-6
KM41C1000CL-6
KM41C1000CSL-6
KM44C256C-6
KM44C256CL-6
KM44C256CSL-6
KM41C4000C-5
KM41C4000C-6
KM41C4000C-7
KM41C4000C-8
KMCJ532512
KM23C1000-20
KM28C64B
KMM594
KM718B90-12
zip 40pin
30-pin simm memory "16m x 8"
KM41C4000C-6
KM41C16000ALL
KM48V2104AL
|
km418c256bj
Abstract: No abstract text available
Text: DRAM MODULE 2 Mega Byte KMM536512BW/BWG Fast Page Mode 512Kx36 DRAM SIMM Using 256Kx18 DRAM, 5V GENERAL DESCRIPTION FEATURES • Performance Range: The Samsung KMM536512BW is a 512K bit x 36 Dynamic RAM high density memory module. The Samsung KMM536512BW consists of four CMOS
|
OCR Scan
|
PDF
|
KMM536512BW/BWG
512Kx36
256Kx18
KMM536512BW
40-pin
72-pin
KMM536512BW-6
km418c256bj
|