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    KM418C256/L/SL-7

    Abstract: No abstract text available
    Text: SAMSUNG ELECTRONICS INC bME D KM418C256/L/SL • 7 T b 4 m 2 GGlBMTb 12=5 « S U G K CMOS DRAM 256K x 18 Bit CMOS Dynamic RAM with Fast Page Mode FEATURES GENERAL DESCRIPTION • Performance range: The S am sung KM418C256/L/SL is a C MOS high speed 262,144 b it x 18 D ynam ic Random A ccess M em ory. Its


    OCR Scan     		PDF KM418C256/L/SL KM418C256/L/SL KM418C256/L/SL-7 KM418C256/L/SL-8 KM418C256/L/SL-10 130ns 150ns 100ns 180ns KM418C256/L/SL-7

    Untitled

    Abstract: No abstract text available
    Text: CMOS DRAM KM418C256LL 256K x18 Bit CMOS Dynamic RAM with Fast Page Mode FEATURES GENERAL DESCRIPTION • Performance range: The Sam sung KM418C256LL is a CMOS high speed 262,144 b it x 18 D ynam ic Random A cce ss M em ory. Its de sig n is o p tim ized fo r high perform ance ap p lica tio n s


    OCR Scan     		PDF KM418C256LL KM418C256LL 130ns KM418C256LL-8 150ns KM418C256LL-10 100ns 180ns KM418C256LL-7

    km418c256

    Abstract: No abstract text available
    Text: KM418C256/USL CMOS DRAM 2 5 6 K x 18 Bit CMOS Dynamic RAM with Fast Page Mode FEATURES GENERAL DESCRIPTION • Performance range: The Samsung KM418C256/L/SL is a CMOS high speed 262,144 bit x 18 Dynamic Random Access Memory. Its design is optimized for high performance applications


    OCR Scan     		PDF KM418C256/USL KM418C256/L/SL KM418C256/L/SL-7 130ns KM418C256/Ã 150ns KM418C256/L/SL-10 100ns 180ns KM418C256/L/SL km418c256

    km418c256

    Abstract: M418C KM418C256A
    Text: CMOS DRAM KM418C256A/AL/ALL 256K x 18 Bit CMOS Dynamic RAM with Fast Page Mode FEATURES GENERAL DESCRIPTION • Performance range: The Samsung KM418C256A/AUALL is a CMOS high speed 262,144 bit x 18 Dynamic Random Access Memory. Its design is optimized for high performance


    OCR Scan     		PDF KM418C256A/AL/ALL KM418C256A/AUALL-6 KM418C256A/AUALL-7 KM418C256A/AL/A 110ns 130ns 150ns KM418C256A/AL/ALL KM418C256A/AUALL km418c256 M418C KM418C256A

    Untitled

    Abstract: No abstract text available
    Text: KM418C256LL CMOS DRAM 256K x 18 Bit CMOS Dynamic RAM with Fast Page Mode FEATURES GENERAL DESCRIPTION • Performance range: The Samsung KM418C256LL is a CMOS high speed 262,144 bit x 18 Dynamic Random Access Memory. Its design is optimized for high performance applications


    OCR Scan     		PDF KM418C256LL KM418C256LL-7 KM418C256LL-8 KM418C256LL-10 130ns 150ns 180ns KM418C256LL

    KM418C256B

    Abstract: No abstract text available
    Text: KM418C256B/BL/BLL CMOS DRAM 256K x18 Bit CMOS Dynamic RAM with Fast Page Mode FEATURES GENERAL DESCRIPTION • Performance range: The Samsung KM418C256B/BLVBLL is a CMOS high spe ed 262,14 4 b it x 18 D ynam ic R andom A cce ss Memory. Its design is optimized for high performance


    OCR Scan     		PDF KM418C256B/BL/BLL KM418C256B/BLVBLL 256B/BL/BLL 40-LEAD KM418C256B

    Untitled

    Abstract: No abstract text available
    Text: SAMSUNG ELECTRONICS INC b4E D KM418C256LL • 7^4145 D0134n 72b ■ SPIGK CMOS DRAM 256K x18 Bit CMOS Dynamic RAM with Fast Page Mode FEATURES GENERAL DESCRIPTION • Performance range: The Samsung KM418C256LL is a C M O S high speed 262,144 bit x 18 Dynamic Random A c ce ss Memory. Its


    OCR Scan     		PDF KM418C256LL D0134n KM418C256LL 130ns KM418C256LL-8 150ns KM418C256LL-10 100ns 180ns KM418C256LL-7

    ida5

    Abstract: No abstract text available
    Text: KM418C256B CMOS DRAM 256K x 18 Bit CM OS Dynamic RAM with Fast Page Mode DESCRIPTION This is a family of 262,144 x 18 bit Fast Page Mode CMOS DRAMs. Fast Page Mode offers high speed random access of memory cells within the same row. Access time -6, -7 or -8 , power consumption (Normal


    OCR Scan     		PDF KM418C256B 256Kx18 ida5

    km418c256bj

    Abstract: NZ34 A6Dz
    Text: CMOS DRAM KM418C256B 256K x 18 Bit CMOS Dynamic RAM with Fast Page Mode DESCRIPTION T his is a fam ily of 2 6 2,144 x 18 bit Fast Page M ode C M O S DRAM s. Fast Page M ode o ffe rs high speed random acce ss of m em ory cells w ithin the sam e row. A ccess tim e -6, -7 or -8 , pow er consum ption (Norm al


    OCR Scan     		PDF KM418C256B 256Kx18 km418c256bj NZ34 A6Dz

    Untitled

    Abstract: No abstract text available
    Text: KM418C256/L/SL CMOS DRAM 256Kx 18 Bit CMOS Dynamic RAM with Fast Page Mode FEATURES GENERAL DESCRIPTION • P erfo rm ance range: Th e S am su ng K M 41 8 C 2 5 6 /L /S L is a C M O S high speed 262,144 bit x 18 D ynam ic R andom A ccess M em o ry. Its K M 418C 256/L/S L-7


    OCR Scan     		PDF KM418C256/L/SL 256Kx 256/L/S 130ns 150ns 100ns 180ns

    km418c256

    Abstract: KM418C256/L/SL-7
    Text: KM418C256/L/SL CMOS DRAM 2 5 6 K x 18 Bit CMOS Dynamic RAM with Fast Page Mode FEATURES GENERAL DESCRIPTION • Performance range: The Samsung KM418C256/L/SL is a CMOS high speed 262,144 bit x 18 Dynamic Random Access Memory. Its design is optimized for high performance applications


    OCR Scan     		PDF KM418C256/L/SL KM418C256/L/SL-7 KM418C256/L/SL-8 KM418C256/USL-10 100ns 130ns 150ns 180ns KM418C256/USL KM418C256/L/SL km418c256

    Untitled

    Abstract: No abstract text available
    Text: SAMSUNG ELECTRONICS INC b? E KM418C256A/AL/ALL D • 7^4142 GGISÖT? 3b l « S r i G K CMOS DRAM 256Kx 18 Bit CMOS Dynamic RAM with Fast Page Mode FEATURES GENERAL DESCRIPTION • Performance range: The Samsung KM418C256A/AUALL is a CMOS high speed 262,144 bit x 18 Dynamic Random Access


    OCR Scan     		PDF KM418C256A/AL/ALL 256Kx KM418C256A/AUALL 110ns KM418C256A/AL/ALL-7 130ns KM418C256A/AL/ALL-8 150ns KM418C256A/AUALL-6

    Untitled

    Abstract: No abstract text available
    Text: CMOS DRAM KM418C256B 256K x 18 Bit CM OS Dynamic RAM with Fast Page Mode DESCRIPTION T his is a fa m ily of 262 ,1 4 4 x 18 bit Fast Page M ode CM O S DRA M s. Fast Page M ode o ffe rs high speed random a cce ss of m em ory cells w ithin the sam e row. A ccess tim e -6, -7 or -8 , pow er consum ption (Norm al


    OCR Scan     		PDF KM418C256B 71L4142 DD20251

    Untitled

    Abstract: No abstract text available
    Text: KM418C256LL CMOS DRAM 256K x 18 Bit CMOS Dynamic RAM with Fast Page Mode FEATURES GENERAL DESCRIPTION • Performance range: The Sam sung KM418C256LL is a CMOS high speed 262,144 b it x 18 D ynam ic Random A cce ss M em ory. Its design is o p tim ized fo r high perform ance ap p lica tio n s


    OCR Scan     		PDF KM418C256LL KM418C256LL KM418C256LL-7 KM418C256LL-8 KM418C256LL-10 130ns 150ns 100ns 180ns

    8C2S6-10

    Abstract: No abstract text available
    Text: PRELIMINARY CMOS DRAM KM418C256 2 5 6 K X 1 8 Bit CMOS Dynamic RAM with Fast Page Mode FEATURES GENERAL DESCRIPTION • P e rfo rm a n c e range: The Samsung K M 4 1 8 C 2 5 6 is a C M OS high speed 2 6 2 ,1 4 4 bit X 18 Dynamic Random A ccess M em ory. Its design is optim ized for high perform ance applications


    OCR Scan     		PDF KM418C256 100ns 180ns 40-LEAD 8C2S6-10

    Untitled

    Abstract: No abstract text available
    Text: PRELIMINARY KM418C256 CMOS DRAM 2 5 6 K X 18 Bit CMOS Dynamic RAM with Fast Page Mode FEATURES GENERAL DESCRIPTION • Perform ance range: The Sam sung K M 4 1 8 C 2 5 6 is a C M O S high speed 2 6 2 ,1 4 4 bit X 1 8 Dynamic Random A ccess M em ory. Its design is optimized for high perform ance applications


    OCR Scan     		PDF KM418C256 40-LEAD

    km418c256

    Abstract: KM418C256J
    Text: PRELIMINARY KM418C256 CMOS DRAM 256'KX 8 Bit CMOS Dynamic RAM with Fast Page Mode FEATURES GENERAL DESCRIPTION • Perform ance range: The Samsung K M 4 1 8 C 2 5 6 is a C M OS high speed 2 6 2 ,1 4 4 bit X 18 Dynamic Random A ccess Memory. Its design is optimized for high perform ance applications


    OCR Scan     		PDF KM418C256 km418c256 KM418C256J

    KM44C4000aS 6

    Abstract: KM44C4000AS KM44C4000A-S km44c4100as KM48V2100AL KM416V256BL
    Text: MEMORY ICs FUNCTION GUIDE 1. INTRODUCTION DRAM 4 M b it 4Mx1 1Mx4 KM41C4000C-6 KM41C4000C-7 " KM41C4000CL-5 KM41C4000CL-6 KM41C4000CL-7 KM41C4000CL-8 - KM41C4002C-5 KM41C4002C-6 KM41C4002C-7 KM41C4002C-8 - KM41V4000C-6 KM41V4000C-7 KM41V4000C-8 - KM41V4000CL-6


    OCR Scan     		PDF KM41C4000C-5 KM41C4000CL-5 KM41C4002C-5 KM41C4000C-6 KM41C4000C-7 KM41C4000CL-7 KM41C4002C-7 KM41V4000C-7 KM41V4000CL-7 KM41C4000C-8 KM44C4000aS 6 KM44C4000AS KM44C4000A-S km44c4100as KM48V2100AL KM416V256BL

    Untitled

    Abstract: No abstract text available
    Text: TABLE OF CONTENTS I. PRODUCT GUIDE 1. Introduction. 11 2. Product G u id e . 18 3. DRAM Ordering System. 23


    OCR Scan     		PDF KM41C1000D KM44C256D. KM41C4000C KM41V4000C.

    Untitled

    Abstract: No abstract text available
    Text: KM416C256LL CMOS DRAM 256Kx 16 Bit CMOS Dynamic RAM with Fast Page Mode FEATURES GENERAL DESCRIPTION • Performance range: The Samsung KM416C256LL is a CMOS high speed 262,144 bit x 16 Dynamic Random Access Memory. Its design is optimized for high performance applications


    OCR Scan     		PDF KM416C256LL 256Kx KM416C256LL 130ns KM416C256LL-8 150ns KM416C256LL-10 100ns 180ns KM416C256LL-7

    Untitled

    Abstract: No abstract text available
    Text: CMOS DRAM KM416C256LL 256K x 16 Bit CMOS Dynamic RAM with Fast Page Mode FEATURES GENERAL DESCRIPTION • Performance range: The S am sung KM416C256LL is a CMOS high speed 262,144 b it x 16 D ynam ic Random A cce ss M em ory. Its design is op tim ized fo r high perform ance ap p lica tio n s


    OCR Scan     		PDF KM416C256LL KM416C256LL KM416C256LL-7 130ns KM416C256LL-8 150ns KM416C256LL-10 100ns 180ns

    23C1001

    Abstract: KMM5334100 km 23c 4000B KMM5362003C KM681001-25 KM68V257 KM428V256 23c4001 4100C M681000
    Text: FUNCTION GUIDE MEMORY ICs 1. INTRODUCTION 1.1 Dynamic RAM 1Mx1 KM41C1000C-6 KM41C1000CL-6 KM41C1000CSL-6 256Kx4 4Mbit— 4Mx1 KM44C256C-6 KM44C256CL-6 KM44C256CL-7 KM 44C256CL-8 - KM44C256CSL-6 KM44C256CL-7 KM 44C256CL-8 — KM41C4000C-7 — KM41C4000C-8 KM41C4000C-5


    OCR Scan     		PDF KM41C1000C-6 KM41C1000CL-6 KM41C1000CSL-6 256Kx4 KM44C256C-6 KM44C256CL-6 KM44C256CL-7 44C256CL-8 KM44C256CSL-6 23C1001 KMM5334100 km 23c 4000B KMM5362003C KM681001-25 KM68V257 KM428V256 23c4001 4100C M681000

    KM424C256Z

    Abstract: SIMM 30-pin 30-pin SIMM RAM KM41C256P KM44C256bp KM41C1000BJ 257J KM44C256BZ 1K x4 static ram 30-pin simm memory "16m x 8"
    Text: FUNCTION GUIDE MEMORY ICs 2. PRODUCT GUIDE 2.1 Dynamic RAM Part Number Capacity Organization Speed ns Technology Features Packages Remark 64K bit KM4164BP 100/120/150 NMOS Page Mode 16 Pin DIP Now 256K bit KM41C256P KM41C256J KM41C256Z KM41C257P KM41C257J


    OCR Scan     		PDF KM4164BP KM41C256P KM41C256J KM41C256Z KM41C257P KM41C257J KM41C257Z KM41C258P KM41C258J KM41C258Z KM424C256Z SIMM 30-pin 30-pin SIMM RAM KM44C256bp KM41C1000BJ 257J KM44C256BZ 1K x4 static ram 30-pin simm memory "16m x 8"

    KM418C256

    Abstract: KM48C2100AL KM416C254 KM44V4100AL KM44C1003
    Text: FUNCTION GUIDE MEMORY ICs 2. PRODUCT GUIDE DRAM Density 1M bil Org. 1Mx1 Power Supply 5V±10% Part Number KM41C1000D# Speed(ns) 60/70/80 Features Fast Page 5V±10% KM44C256D# 60/70/80 Fast Page 4Mx1 5V±10% KM41C4000C# 50/60/70/80 Fast Page KM41C4002C# 60/70/80


    OCR Scan     		PDF KM41C1000D# KM41C10OOD-L# 256Kx4) 256Kx4 KM44C256D# KM44C256D-L# KM41C4000C# KM41C4000CL# KM41C4002C# KM41V4000C# KM418C256 KM48C2100AL KM416C254 KM44V4100AL KM44C1003