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    Samsung Semiconductor KM416V4104BSL6

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    SEC KM416V4104BS-L6

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    Quest Components KM416V4104BS-L6 76
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    SEC KM416V4104BSL6

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    ComSIT USA KM416V4104BSL6 13
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    Samsung Electronics Co. Ltd KM416V4104BS-L5

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    Component Electronics, Inc KM416V4104BS-L5 1,046
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    KM416V4104B Datasheets (11)

    Part ECAD Model Manufacturer Description Curated Datasheet Type PDF
    KM416V4104B Samsung Electronics 4M x 16-Bit CMOS Dynamic RAM with Extended Data Out Original PDF
    KM416V4104BS Samsung Electronics KM416V4104BS 4M x 16-Bit CMOS Dynamic RAM With Extended Data Out Organization = 4Mx16 Mode = Edo Voltage(V) = 3.3 Refresh = 4K/64ms Speed(ns) = 50,60 Package = 50TSOP2 Power = Normal,low Production Status = Eol Comments = - Original PDF
    KM416V4104BS-45 Samsung Electronics 4M x 16-Bit CMOS Dynamic RAM with Extended Data Out Original PDF
    KM416V4104BS-5 Samsung Electronics 4M x 16-Bit CMOS Dynamic RAM with Extended Data Out Original PDF
    KM416V4104BS-6 Samsung Electronics 4M x 16-Bit CMOS Dynamic RAM with Extended Data Out Original PDF
    KM416V4104BS-L-45 Samsung Electronics 4M x 16-Bit CMOS Dynamic RAM with Extended Data Out Original PDF
    KM416V4104BSL-45 Samsung Electronics 4M x 16-Bit CMOS dynamic RAM with extended data out, 3.3V power supply, 45ns, low power Original PDF
    KM416V4104BS-L-5 Samsung Electronics 4M x 16-Bit CMOS Dynamic RAM with Extended Data Out Original PDF
    KM416V4104BSL-5 Samsung Electronics 4M x 16-Bit CMOS dynamic RAM with extended data out, 3.3V power supply, 50ns, low power Original PDF
    KM416V4104BS-L-6 Samsung Electronics 4M x 16-Bit CMOS Dynamic RAM with Extended Data Out Original PDF
    KM416V4104BSL-6 Samsung Electronics 4M x 16-Bit CMOS dynamic RAM with extended data out, 3.3V power supply, 60ns, low power Original PDF

    KM416V4104B Datasheets Context Search

    Catalog Datasheet MFG & Type Document Tags PDF

    KM416V4004B

    Abstract: KM416V4104B
    Text: KM416V4004B, KM416V4104B CMOS DRAM 4M x 16bit CMOS Dynamic RAM with Extended Data Out DESCRIPTION This is a family of 4,194,304 x 16 bit Extended Data Out Mode CMOS DRAMs. Extended Data Out Mode offers high speed random access of memory cells within the same row. Refresh cycle 4K Ref. or 8K Ref. , access time (-45, -5 or -6), power consumption(Normal


    Original     		KM416V4004B, KM416V4104B 16bit 4Mx16 400mil KM416V4004B KM416V4104B PDF

    KM416V4004B

    Abstract: KM416V4104B
    Text: KM416V4004B, KM416V4104B CMOS DRAM 4M x 16bit CMOS Dynamic RAM with Extended Data Out DESCRIPTION This is a family of 4,194,304 x 16 bit Extended Data Out Mode CMOS DRAMs. Extended Data Out Mode offers high speed random access of memory cells within the same row. Refresh cycle 4K Ref. or 8K Ref. , access time (-45, -5 or -6), power consumption(Normal


    Original     		KM416V4004B, KM416V4104B 16bit 4Mx16 400mil KM416V4004B KM416V4104B PDF

    KMM372F804BS

    Abstract: No abstract text available
    Text: KMM372F804BS DRAM MODULE KMM372F804BS EDO Mode 8M x 72 DRAM DIMM with ECC Using 4Mx16 & 4Mx4, 4K Refresh, 3.3V GENERAL DESCRIPTION FEATURES The Samsung KMM372F804B is a 8Mx72bits Dynamic RAM high density memory module. The Samsung KMM372F804B consists of eight 4Mx16bits & four 4Mx4bits CMOS DRAMs in


    Original     		KMM372F804BS KMM372F804BS 4Mx16 KMM372F804B 8Mx72bits KMM372F804B 4Mx16bits 400mil 168-pin PDF

    KMM372F404BS

    Abstract: No abstract text available
    Text: KMM372F404BS DRAM MODULE KMM372F404BS EDO Mode 4M x 72 DRAM DIMM with ECC Using 4Mx16 & 4Mx4, 4K Refresh, 3.3V GENERAL DESCRIPTION FEATURES The Samsung KMM372F404B is a 4Mx72bits Dynamic RAM high density memory module. The Samsung KMM372F404B consists of four 4Mx16bits & two 4Mx4bits CMOS DRAMs in


    Original     		KMM372F404BS KMM372F404BS 4Mx16 KMM372F404B 4Mx72bits KMM372F404B 4Mx16bits 400mil 168-pin PDF

    KMM366F404BS1

    Abstract: No abstract text available
    Text: DRAM MODULE KMM366F40 8 4BS1 KMM366F40(8)4BS1 EDO Mode without buffer 4M x 64 DRAM DIMM Using 4Mx16, 4K & 8K Refresh, 3.3V GENERAL DESCRIPTION FEATURES The Samsung KMM366F40(8)4BS1 is a 4Mx64bits Dynamic RAM high density memory module. The Samsung KMM366F40(8)4BS1 consists of four CMOS 4Mx16bits


    Original     		KMM366F40 4Mx16, 4Mx64bits 4Mx16bits 400mil 168-pin KMM366F404BS1 PDF

    4MX16

    Abstract: KM416V4104BS
    Text: DRAM MODULE KMM332F804BS/BZ-L 8Mx32 SODIMM 4Mx16 base Revision 0.0 Sept. 1997 DRAM MODULE KMM332F804BS/BZ-L Revision History Version 0.0 (Sept, 1997) • Removed two AC parameters t CACP (access time from CAS) and t AAP (access time from col. addr.) in AC CHARACTERISTICS.


    Original     		KMM332F804BS/BZ-L 8Mx32 4Mx16 KMM332F804BS/BZ-L 4MX16, KMM332F804B 8Mx32bits KMM332F804B KM416V4104BS PDF

    4MX16

    Abstract: No abstract text available
    Text: DRAM MODULE KMM332F404BS/BZ-L 4Mx32 SODIMM 4Mx16 base Revision 0.0 Sept. 1997 DRAM MODULE KMM332F404BS/BZ-L Revision History Version 0.0 (Sept, 1997) • Removed two AC parameters t CACP (access time from CAS) and t AAP (access time from col. addr.) in AC CHARACTERISTICS.


    Original     		KMM332F404BS/BZ-L 4Mx32 4Mx16 KMM332F404BS/BZ-L 4MX16, KMM332F404B 8Mx32bits KMM332F404B PDF

    24C02N

    Abstract: No abstract text available
    Text: UG44W6446HSG Revision History Mar 04 , 1999 Rev - B Oct 30 , 1998 Rev - A Added More Detailed Dimension Information Of PCB , Full Data sheet Changed to new format. Data sheet released. 45388 Warm Springs Blvd. Fremont, CA. 94539 Tel: 510 668-2088 Fax: (510) 661-2788


    Original     		UG44W6446HSG 144Pin UG44W6446HSG 24C02N-10SC-2 144-pin 24C02N PDF

    KM616V4002BT-10

    Abstract: PCI9054 VME PMC MT4LC4M16R6TG-6 NM6403 P1386 TMS320C40 KM416V4104B-5 uprx
    Text: Утвержден ЮФКВ.469555.088РЭ-УД Модуль МЦ 4.07 Руководство по эксплуатации ЮФКВ.469555.088РЭ Инв.№ подл. Подп. и дата Взам.инв.№ Инв.№ дублл. Подп. и дата


    Original     		NM6403" com/download/9054/9054-1ds KM616V4002BT-10 PCI9054 VME PMC MT4LC4M16R6TG-6 NM6403 P1386 TMS320C40 KM416V4104B-5 uprx PDF

    KM416V4104BS

    Abstract: KMM372F804BS
    Text: KMM372F804BS DRAM MODULE ABSOLUTE MAXIMUM RATINGS * Item Voltage on any pin relative VSS Voltage on VCC supply relative to VSS Storage Temperature Power Dissipation Short Circuit Output Current Symbol Rating Unit VIN, VOUT VCC Tstg PD IOS -0.5 to +4.6 -0.5 to +4.6


    Original     		KMM372F804BS 540Min) 150Max 81Max) 4Mx16 KMM372F804BS -KM416V4104BS KM44V4004CS 01Max KM416V4104BS PDF

    Untitled

    Abstract: No abstract text available
    Text: DRAM MODULE KMM466F804BS1-L KMM466F804BS1-L EDO Mode 8M x 64 DRAM SODIMM Using 4Mx16, 4K Refresh 3.3V, Low power/Self-Refresh GENERAL DESCRIPTION FEATURES The Samsung KMM466F804BS1-L is a 8Mx64bits Dynamic • Part Identification RAM high density memory module.


    Original     		KMM466F804BS1-L KMM466F804BS1-L 4Mx16, 8Mx64bits cycles/128ms, 4Mx16bits 400mil PDF

    KMM372F804BS

    Abstract: No abstract text available
    Text: KMM372F804BS DRAM MODULE KMM372F804BS EDO Mode 8M x 72 DRAM DIMM with ECC Using 4Mx16 & 4Mx4, 4K Refresh, 3.3V GENERAL DESCRIPTION FEATURES The Samsung KMM372F804B is a 8Mx72bits Dynamic RAM high density memory module. The Samsung KMM372F804B consists of eight 4Mx16bits & four 4Mx4bits CMOS DRAMs in


    Original     		KMM372F804BS KMM372F804BS 4Mx16 KMM372F804B 8Mx72bits KMM372F804B 4Mx16bits 400mil 168-pin PDF

    Untitled

    Abstract: No abstract text available
    Text: KM416V4004B, KM416V4104B CMOS DRAM 4M x 16bit CMOS Dynamic RAM with Extended Data Out DESCRIPTION This is a family of 4,194,304 x 16 bit Extended Data Out Mode CMOS DRAMs. Extended Data Out Mode offers high speed random access of memory cells within the same row. Refresh cycle 4K Ref. or 8K Ref. , access time (-45, -5 or -6), power consumption(Normal


    OCR Scan     		KM416V4004B, KM416V4104B 16bit 4Mx16 PDF

    Untitled

    Abstract: No abstract text available
    Text: KM416V4004B, KM416V4104B CMOS DRAM 4M x 16bit CMOS Dynamic RAM with Extended Data Out DESCRIPTION This is a fam ily of 4,194,304 x 16 bit Extended Data O ut Mode CMOS DRAMs. Extended Data O ut Mode offers high speed random access of mem ory cells within the same row. Refresh cycle 4K Ref. or 8K Ref. , access time (-45, -5 or -6), power consumption(Normal


    OCR Scan     		KM416V4004B, KM416V4104B 16bit 4Mx16 PDF

    Untitled

    Abstract: No abstract text available
    Text: DRAM MODULE KMM466F404BS2-L 4Mx64 SODIMM 4Mx16 base Revision 0.0 Dec. 1997 ELECTRONICS DRAM MODULE KMM466F404BS2-L Revision History Version 0.0 (Dec. 1997) • R e m o v e d tw o AC p a ra m e te rs t c a c p (a c c e s s tim e fro m CAS) a n d tA A P (a cce ss tim e fro m co l. a d d r.) in A C CHARACTERISTICS.


    OCR Scan     		KMM466F404BS2-L 4Mx64 4Mx16 KMM466F404AS1 KMM466F404BS2-L KMM466F404AS2-L 4Mx16, PDF

    4MB DRAM

    Abstract: 4MX16 1MX16
    Text: TABLE OF CONTENTS I. GENERAL INFORMATION 1. Introduction . 11 2. Product Guide . 17 3. Ordering information . .


    OCR Scan     		KM41C4000D/KM41V4000D. KM44C1000D/KM44V1000D. KM44C1003D -KM44C1004D/KM44V1004D. KM44C1005D -KM48C512D/KM48V512D. KM48C512D 4MB DRAM 4MX16 1MX16 PDF

    Untitled

    Abstract: No abstract text available
    Text: DRAM MODULE KMM332F404BS/BZ-L 4Mx32 SODIMM 4Mx16 base Revision 0.0 Sept. 1997 DRAM MODULE KMM332F404BS/BZ-L Revision History Version 0.0 (Sept, 1997) Removed two AC parameters tCACP(access time from CAS) and tAAP(access time from col. addr.) in A C CHARACTERISTICS.


    OCR Scan     		KMM332F404BS/BZ-L 4Mx32 4Mx16 KMM332F404BS/BZ-L 4MX16, KMM332F404B 8Mx32bits KMM332F404B PDF

    KM44C4105C-6

    Abstract: KM44C16004
    Text: General Information CMOS DRAM 1. introduction 4Mbit 4Mx1 KM41C4000D-5 - KM41C4000D-6 - KM41C4000D-7 KM41C4000D-L5 1Mx4 KM41C4000D-L6 KM41C4000D-L7 KM41V4000D-6 KM41V4000D-7 KM41V4000D-L6 KM41V4000D-L7 KM44C1000D-5 - KM44C1000D-6 - KM44C1000D-7 KM44C1000D-L5 - KM44C1000D-L6 - KM44C1000D-L7


    OCR Scan     		KM41C4000D-5 KM41C4000D-6 KM41C4000D-7 KM41C4000D-L5 KM41C4000D-L6 KM41V4000D-6 KM41V4000D-L6 KM41C4000D-L7 KM41V4000D-7 KM41V4000D-L7 KM44C4105C-6 KM44C16004 PDF

    Untitled

    Abstract: No abstract text available
    Text: DRAM MODULE KMM366F40 8 4BS1 Unbuffered 4Mx64 DIMM (4Mx16 base) Revision 0.0 Dec. 1997 DRAM MODULE KMM366F40(8)4BS1 Revision History Version 0.0 (Dec. 1997) R e m o v e d tw o AC p a ra m e te rs t c a c p (a c c e s s tim e fro m CAS) a n d tA A P (a cce ss tim e fro m co l. a d d r.) in A C CHARACTERISTICS.


    OCR Scan     		KMM366F40 4Mx64 4Mx16 4Mx16, PDF

    Untitled

    Abstract: No abstract text available
    Text: DRAM MODULE KMM374F804BS KMM374F804BS Fast EDO Mode without buffer 8M X 72 DRAM DIMM with ECC Using 4Mx16 & 4Mx4, 4K Refresh, 3.3V GENERAL DESCRIPTION FEATURES The Samsung KMM374F804BS is a 8Mx72bits Dynamic RAM high density memory module. The Samsung KMM374F804BS


    OCR Scan     		KMM374F804BS KMM374F804BS 4Mx16 8Mx72bits 4Mx16bits 400mil 300mil 168-pin PDF

    Untitled

    Abstract: No abstract text available
    Text: DRAM MODULE KMM466F404BS2-L 4Mx64 SODIMM 4Mx16 base Revision 0.1 Nov. 1997 Rev.0.1 (Nov. 1997) ELECTRONICS DRAM MODULE KMM466F404BS2-L Revision History Version 0.0 (Sept. 1997) • R e m o v e d tw o AC p a r a m e te r s t c a c p ( a c c e s s tim e fr o m CAS) a n d tA A P ( a c c e s s tim e fr o m c o l. a d d r . ) in A C CHARACTERISTICS.


    OCR Scan     		KMM466F404BS2-L 4Mx64 4Mx16 KMM466F404BS1 KMM466F404BS2 KMM466F404BS2-L PDF

    Untitled

    Abstract: No abstract text available
    Text: KMM372F404BS DRAM MODULE Buffered 4Mx72 DIMM 4Mx16 & 4Mx4 base Revision 0.0 Sept. 1997 ELECTRONIC! DRAM MODULE KMM372F404BS Revision History Version 0.0 (Sept. 1997) • Removed two AC parameters t CACP(access time from CAS) and tAAP(access time from col. addr.) in AC CHARACTERISTICS.


    OCR Scan     		KMM372F404BS 4Mx72 4Mx16 KMM372F404BS KMM372F404B 4Mx72bits KMM372F404B PDF

    Untitled

    Abstract: No abstract text available
    Text: DRAM MODULE KMM466F404BS2-L 4Mx64 SODIMM 4Mx16 base Revision 0.0 Dec. 1997 DRAM MODULE KMM466F404BS2-L Re v i s i o n H is to ry Version 0.0 (Dec. 1997) * Removed two AC parameters t c a c p (access tim e from CAS) and tAAP (access time from col. addr.) in AC C H A R A C T E R I S T I CS .


    OCR Scan     		KMM466F404BS2-L 4Mx64 4Mx16 466F404AS1-Lto KMM466F404BS2-L 466F404AS2-L 4Mx16, PDF

    Untitled

    Abstract: No abstract text available
    Text: KM M 372F804B S DRAM MODULE KM M 372F 80 4B S EDO M o d e 8M x 72 DRAM DIMM with ECC Using 4Mx16 & 4Mx4, 4K Refresh, 3.3V FEATURES GENERAL DESCRIPTION The Samsung KMM372F804B is a 8Mx72bits Dynamic RAM high density memory module. The Samsung KMM372F804B consists ot eight 4M x16bits & four 4Mx4bits CMOS DRAMs in


    OCR Scan     		372F804B 4Mx16 KMM372F804B 8Mx72bits x16bits 400mil 168-pin 372F804BS PDF