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    Samsung Semiconductor KM416V4104BSL6

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    SEC KM416V4104BS-L6

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    Quest Components KM416V4104BS-L6 76
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    Samsung Electronics Co. Ltd KM416V4104BS-L5

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    Component Electronics, Inc KM416V4104BS-L5 1,046
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    KM416V4104BS Datasheets (10)

    Part ECAD Model Manufacturer Description Curated Datasheet Type PDF
    KM416V4104BS Samsung Electronics KM416V4104BS 4M x 16-Bit CMOS Dynamic RAM With Extended Data Out Organization = 4Mx16 Mode = Edo Voltage(V) = 3.3 Refresh = 4K/64ms Speed(ns) = 50,60 Package = 50TSOP2 Power = Normal,low Production Status = Eol Comments = - Original PDF
    KM416V4104BS-45 Samsung Electronics 4M x 16-Bit CMOS Dynamic RAM with Extended Data Out Original PDF
    KM416V4104BS-5 Samsung Electronics 4M x 16-Bit CMOS Dynamic RAM with Extended Data Out Original PDF
    KM416V4104BS-6 Samsung Electronics 4M x 16-Bit CMOS Dynamic RAM with Extended Data Out Original PDF
    KM416V4104BS-L-45 Samsung Electronics 4M x 16-Bit CMOS Dynamic RAM with Extended Data Out Original PDF
    KM416V4104BSL-45 Samsung Electronics 4M x 16-Bit CMOS dynamic RAM with extended data out, 3.3V power supply, 45ns, low power Original PDF
    KM416V4104BS-L-5 Samsung Electronics 4M x 16-Bit CMOS Dynamic RAM with Extended Data Out Original PDF
    KM416V4104BSL-5 Samsung Electronics 4M x 16-Bit CMOS dynamic RAM with extended data out, 3.3V power supply, 50ns, low power Original PDF
    KM416V4104BS-L-6 Samsung Electronics 4M x 16-Bit CMOS Dynamic RAM with Extended Data Out Original PDF
    KM416V4104BSL-6 Samsung Electronics 4M x 16-Bit CMOS dynamic RAM with extended data out, 3.3V power supply, 60ns, low power Original PDF

    KM416V4104BS Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    KMM372F804BS

    Abstract: No abstract text available
    Text: KMM372F804BS DRAM MODULE KMM372F804BS EDO Mode 8M x 72 DRAM DIMM with ECC Using 4Mx16 & 4Mx4, 4K Refresh, 3.3V GENERAL DESCRIPTION FEATURES The Samsung KMM372F804B is a 8Mx72bits Dynamic RAM high density memory module. The Samsung KMM372F804B consists of eight 4Mx16bits & four 4Mx4bits CMOS DRAMs in


    Original     		PDF KMM372F804BS KMM372F804BS 4Mx16 KMM372F804B 8Mx72bits KMM372F804B 4Mx16bits 400mil 168-pin

    KMM372F404BS

    Abstract: No abstract text available
    Text: KMM372F404BS DRAM MODULE KMM372F404BS EDO Mode 4M x 72 DRAM DIMM with ECC Using 4Mx16 & 4Mx4, 4K Refresh, 3.3V GENERAL DESCRIPTION FEATURES The Samsung KMM372F404B is a 4Mx72bits Dynamic RAM high density memory module. The Samsung KMM372F404B consists of four 4Mx16bits & two 4Mx4bits CMOS DRAMs in


    Original     		PDF KMM372F404BS KMM372F404BS 4Mx16 KMM372F404B 4Mx72bits KMM372F404B 4Mx16bits 400mil 168-pin

    KMM366F404BS1

    Abstract: No abstract text available
    Text: DRAM MODULE KMM366F40 8 4BS1 KMM366F40(8)4BS1 EDO Mode without buffer 4M x 64 DRAM DIMM Using 4Mx16, 4K & 8K Refresh, 3.3V GENERAL DESCRIPTION FEATURES The Samsung KMM366F40(8)4BS1 is a 4Mx64bits Dynamic RAM high density memory module. The Samsung KMM366F40(8)4BS1 consists of four CMOS 4Mx16bits


    Original     		PDF KMM366F40 4Mx16, 4Mx64bits 4Mx16bits 400mil 168-pin KMM366F404BS1

    4MX16

    Abstract: KM416V4104BS
    Text: DRAM MODULE KMM332F804BS/BZ-L 8Mx32 SODIMM 4Mx16 base Revision 0.0 Sept. 1997 DRAM MODULE KMM332F804BS/BZ-L Revision History Version 0.0 (Sept, 1997) • Removed two AC parameters t CACP (access time from CAS) and t AAP (access time from col. addr.) in AC CHARACTERISTICS.


    Original     		PDF KMM332F804BS/BZ-L 8Mx32 4Mx16 KMM332F804BS/BZ-L 4MX16, KMM332F804B 8Mx32bits KMM332F804B KM416V4104BS

    4MX16

    Abstract: No abstract text available
    Text: DRAM MODULE KMM332F404BS/BZ-L 4Mx32 SODIMM 4Mx16 base Revision 0.0 Sept. 1997 DRAM MODULE KMM332F404BS/BZ-L Revision History Version 0.0 (Sept, 1997) • Removed two AC parameters t CACP (access time from CAS) and t AAP (access time from col. addr.) in AC CHARACTERISTICS.


    Original     		PDF KMM332F404BS/BZ-L 4Mx32 4Mx16 KMM332F404BS/BZ-L 4MX16, KMM332F404B 8Mx32bits KMM332F404B

    24C02N

    Abstract: No abstract text available
    Text: UG44W6446HSG Revision History Mar 04 , 1999 Rev - B Oct 30 , 1998 Rev - A Added More Detailed Dimension Information Of PCB , Full Data sheet Changed to new format. Data sheet released. 45388 Warm Springs Blvd. Fremont, CA. 94539 Tel: 510 668-2088 Fax: (510) 661-2788


    Original     		PDF UG44W6446HSG 144Pin UG44W6446HSG 24C02N-10SC-2 144-pin 24C02N

    KM416V4104BS

    Abstract: KMM372F804BS
    Text: KMM372F804BS DRAM MODULE ABSOLUTE MAXIMUM RATINGS * Item Voltage on any pin relative VSS Voltage on VCC supply relative to VSS Storage Temperature Power Dissipation Short Circuit Output Current Symbol Rating Unit VIN, VOUT VCC Tstg PD IOS -0.5 to +4.6 -0.5 to +4.6


    Original     		PDF KMM372F804BS 540Min) 150Max 81Max) 4Mx16 KMM372F804BS -KM416V4104BS KM44V4004CS 01Max KM416V4104BS

    Untitled

    Abstract: No abstract text available
    Text: DRAM MODULE KMM466F804BS1-L KMM466F804BS1-L EDO Mode 8M x 64 DRAM SODIMM Using 4Mx16, 4K Refresh 3.3V, Low power/Self-Refresh GENERAL DESCRIPTION FEATURES The Samsung KMM466F804BS1-L is a 8Mx64bits Dynamic • Part Identification RAM high density memory module.


    Original     		PDF KMM466F804BS1-L KMM466F804BS1-L 4Mx16, 8Mx64bits cycles/128ms, 4Mx16bits 400mil

    KMM372F804BS

    Abstract: No abstract text available
    Text: KMM372F804BS DRAM MODULE KMM372F804BS EDO Mode 8M x 72 DRAM DIMM with ECC Using 4Mx16 & 4Mx4, 4K Refresh, 3.3V GENERAL DESCRIPTION FEATURES The Samsung KMM372F804B is a 8Mx72bits Dynamic RAM high density memory module. The Samsung KMM372F804B consists of eight 4Mx16bits & four 4Mx4bits CMOS DRAMs in


    Original     		PDF KMM372F804BS KMM372F804BS 4Mx16 KMM372F804B 8Mx72bits KMM372F804B 4Mx16bits 400mil 168-pin

    Untitled

    Abstract: No abstract text available
    Text: DRAM MODULE KMM466F404BS2-L KMM466F404BS2-L EDO Mode 4M x 64 DRAM SODIMM Using 4Mx16, 4K Refresh 3.3V, Low power/Self-Refresh GENERAL DESCRIPTION FEATURES The Samsung KMM466F404BS2-L is a 4Mx64bits Dynamic RAM high density memory module. The • Part Identification


    Original     		PDF KMM466F404BS2-L KMM466F404BS2-L 4Mx16, 4Mx64bits cycles/128ms, 4Mx16bits 400mil

    Untitled

    Abstract: No abstract text available
    Text: DRAM MODULE KMM466F804BS1-L Revision History Version 0.0 Sept. 1997 • Removed two AC parameters tCACP(access time from CAS) and tAAP(access time from col. addr.) in AC CHARACTERISTICS. • Changed the parameter t CAC(access time from CAS) from 13ns to 15ns @ -5 in AC CHARACTERISTICS.


    Original     		PDF KMM466F804BS1-L KMM466F804BS1-L 4Mx16, 8Mx64bits cycles/128ms, 150Max 81Max)

    KMM374F804BS

    Abstract: No abstract text available
    Text: DRAM MODULE KMM374F804BS KMM374F804BS Fast EDO Mode without buffer 8M x 72 DRAM DIMM with ECC Using 4Mx16 & 4Mx4, 4K Refresh, 3.3V GENERAL DESCRIPTION FEATURES The Samsung KMM374F804BS is a 8Mx72bits Dynamic RAM high density memory module. The Samsung KMM374F804BS


    Original     		PDF KMM374F804BS KMM374F804BS 4Mx16 8Mx72bits 4Mx16bits 400mil 300mil 168-pin

    Untitled

    Abstract: No abstract text available
    Text: DRAM MODULE KMM366F80 8 4BS1 KMM366F80(8)4BS1 EDO Mode without buffer 8M x 64 DRAM DIMM Using 4Mx16, 8K & 4K Refresh, 3.3V GENERAL DESCRIPTION FEATURES The Samsung KMM366F80(8)4BS1 is a 8Mx64bits Dynamic RAM high density memory module. The Samsung KMM366F80(8)4BS1 consists of eight CMOS 4Mx16bits


    Original     		PDF KMM366F80 4Mx16, 8Mx64bits 4Mx16bits 400mil 168-pin

    Untitled

    Abstract: No abstract text available
    Text: DRAM MODULE KMM466F404BS2-L 4Mx64 SODIMM 4Mx16 base Revision 0.0 Dec. 1997 ELECTRONICS DRAM MODULE KMM466F404BS2-L Revision History Version 0.0 (Dec. 1997) • R e m o v e d tw o AC p a ra m e te rs t c a c p (a c c e s s tim e fro m CAS) a n d tA A P (a cce ss tim e fro m co l. a d d r.) in A C CHARACTERISTICS.


    OCR Scan     		PDF KMM466F404BS2-L 4Mx64 4Mx16 KMM466F404AS1 KMM466F404BS2-L KMM466F404AS2-L 4Mx16,

    Untitled

    Abstract: No abstract text available
    Text: DRAM MODULE KMM366F40 8 4BS1 Unbuffered 4Mx64 DIMM (4Mx16 base) Revision 0.0 Dec. 1997 DRAM MODULE KMM366F40(8)4BS1 Revision History Version 0.0 (Dec. 1997) R e m o v e d tw o AC p a ra m e te rs t c a c p (a c c e s s tim e fro m CAS) a n d tA A P (a cce ss tim e fro m co l. a d d r.) in A C CHARACTERISTICS.


    OCR Scan     		PDF KMM366F40 4Mx64 4Mx16 4Mx16,

    Untitled

    Abstract: No abstract text available
    Text: DRAM MODULE KMM374F804BS KMM374F804BS Fast EDO Mode without buffer 8M X 72 DRAM DIMM with ECC Using 4Mx16 & 4Mx4, 4K Refresh, 3.3V GENERAL DESCRIPTION FEATURES The Samsung KMM374F804BS is a 8Mx72bits Dynamic RAM high density memory module. The Samsung KMM374F804BS


    OCR Scan     		PDF KMM374F804BS KMM374F804BS 4Mx16 8Mx72bits 4Mx16bits 400mil 300mil 168-pin

    Untitled

    Abstract: No abstract text available
    Text: DRAM MODULE KMM466F404BS2-L 4Mx64 SODIMM 4Mx16 base Revision 0.1 Nov. 1997 Rev.0.1 (Nov. 1997) ELECTRONICS DRAM MODULE KMM466F404BS2-L Revision History Version 0.0 (Sept. 1997) • R e m o v e d tw o AC p a r a m e te r s t c a c p ( a c c e s s tim e fr o m CAS) a n d tA A P ( a c c e s s tim e fr o m c o l. a d d r . ) in A C CHARACTERISTICS.


    OCR Scan     		PDF KMM466F404BS2-L 4Mx64 4Mx16 KMM466F404BS1 KMM466F404BS2 KMM466F404BS2-L

    Untitled

    Abstract: No abstract text available
    Text: KMM372F404BS DRAM MODULE Buffered 4Mx72 DIMM 4Mx16 & 4Mx4 base Revision 0.0 Sept. 1997 ELECTRONIC! DRAM MODULE KMM372F404BS Revision History Version 0.0 (Sept. 1997) • Removed two AC parameters t CACP(access time from CAS) and tAAP(access time from col. addr.) in AC CHARACTERISTICS.


    OCR Scan     		PDF KMM372F404BS 4Mx72 4Mx16 KMM372F404BS KMM372F404B 4Mx72bits KMM372F404B

    Untitled

    Abstract: No abstract text available
    Text: DRAM MODULE KMM466F404BS2-L 4Mx64 SODIMM 4Mx16 base Revision 0.0 Dec. 1997 DRAM MODULE KMM466F404BS2-L Re v i s i o n H is to ry Version 0.0 (Dec. 1997) * Removed two AC parameters t c a c p (access tim e from CAS) and tAAP (access time from col. addr.) in AC C H A R A C T E R I S T I CS .


    OCR Scan     		PDF KMM466F404BS2-L 4Mx64 4Mx16 466F404AS1-Lto KMM466F404BS2-L 466F404AS2-L 4Mx16,

    Untitled

    Abstract: No abstract text available
    Text: KM M 372F804B S DRAM MODULE KM M 372F 80 4B S EDO M o d e 8M x 72 DRAM DIMM with ECC Using 4Mx16 & 4Mx4, 4K Refresh, 3.3V FEATURES GENERAL DESCRIPTION The Samsung KMM372F804B is a 8Mx72bits Dynamic RAM high density memory module. The Samsung KMM372F804B consists ot eight 4M x16bits & four 4Mx4bits CMOS DRAMs in


    OCR Scan     		PDF 372F804B 4Mx16 KMM372F804B 8Mx72bits x16bits 400mil 168-pin 372F804BS

    Untitled

    Abstract: No abstract text available
    Text: DRAM MODULE KMM332F804BS/BZ-L 8Mx32 SODIMM 4Mx16 base Revision 0.0 Sept. 1997 DRAM MODULE KMM332F804BS/BZ-L Revision History Version 0.0 (Sept, 1997) Removed two AC parameters tCACP(access time from CAS) and tAAP(access time from col. addr.) in A C CHARACTERISTICS.


    OCR Scan     		PDF KMM332F804BS/BZ-L 8Mx32 4Mx16 KMM332F804BS/BZ-L 4MX16, KMM332F804B 8Mx32bits KMM332F804B

    Untitled

    Abstract: No abstract text available
    Text: DRAM MODULE KM M 3 6 6 F 4 0 8 4 B S1 Unbuffered 4Mx64 DIMM (4Mx16 base) Revision 0.0 Dec. 1997 L££TRt»ü£S DRAM MODULE KM M 3 6 6 F 4 0 ( 8 ) 4 B S1 Re v is io n H is to ry Version 0.0 (Dec. 1997) • R em oved tw o A C p aram eters t cacp (access tim e from C A S ) and


    OCR Scan     		PDF 4Mx64 4Mx16 KMM366F40 KMM366F404BS1 -KM416V4104BS KMM366F484BS1 -KM416V4004BS

    Untitled

    Abstract: No abstract text available
    Text: DRAM M ODULE KMM374F804BS Unbuffered 8Mx72 DIMM 4Mx16 & 4Mx4 base Revision 0.0 Sept. 1997 DRAM M ODULE KMM374F804BS Revision History V e r s i o n 0.0 ( Se pt , 1 9 97 ) Removed two AC parameters t CACP(access time from CAS) and tAAP(access time from col. addr.) in AC CHARACTERISTICS.


    OCR Scan     		PDF KMM374F804BS 8Mx72 4Mx16 74F804B KMM374F804BS x72bits

    Untitled

    Abstract: No abstract text available
    Text: KMM372F404BS DRAM MODULE Buffered 4Mx72 DIMM 4Mx16 & 4Mx4 base Revision 0.0 Sept. 1997 DRAM MODULE KM M 3 7 2 F 4 0 4 B S Re v is io n H is to ry Version 0.0 (Sept. 1997) • R e m o v e d tw o A C p a ra m e te rs t c a c p (a c c e s s tim e fro m C A S ) a n d tA A P (a c c e s s tim e fro m col. a d d r.) in A C C H A R A C T E R I S T I C S .


    OCR Scan     		PDF KMM372F404BS 4Mx72 4Mx16 372F404BS 4096cycles/64ms KMM372F404BS -KM416V4104BS KM44V4004CS